基本信息:
- 专利标题： Method of growing silicon single crystals
- 专利标题（中）：生长硅单晶的方法
- 申请号：US12457065 申请日：2009-06-01
- 公开(公告)号：US20090293802A1 公开(公告)日：2009-12-03
- 发明人： Hiroaki Taguchi , Hideki Hara , Ryoichi Kaito
- 申请人： Hiroaki Taguchi , Hideki Hara , Ryoichi Kaito
- 优先权： JP2008-145588 20080603
- 主分类号： C30B15/22
- IPC分类号： C30B15/22
摘要：
By giving a shoulder portion height of at least 100 mm in growing silicon single crystals having a diameter of 450 mm (weighing up to 1100 kg) by the CZ method, it becomes possible to inhibit the occurrence of dislocations in the shoulder formation step to thereby achieve a yield improvement and increase productivity. Furthermore, when this method is applied under application of a transverse magnetic field with a predetermined intensity, the occurrence of dislocations can be further inhibited and, accordingly, defect-free silicon single crystals suited for wafer manufacture can be grown with high production efficiency. Thus, the method is best suited for the production of large-diameter silicon single crystals having a diameter of 450 mm, which are applied in the manufacture of semiconductor devices.
摘要（中）：
通过在CZ方法中生长出直径为450mm（重达1100kg）的单晶硅的肩部高度至少为100mm，可以抑制肩部形成步骤中的位错的发生，由此 实现产量提高并提高生产率。 此外，当施加具有预定强度的横向磁场的这种方法时，可以进一步抑制位错的发生，因此，可以以高生产效率生长适用于晶片制造的无缺陷硅单晶。 因此，该方法最适用于生产直径为450mm的大直径硅单晶，其应用于半导体器件的制造中。