专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20050081779A1 Heater for crystal formation, apparatus for forming crystal and method for forming crystal 有权
标题翻译：晶体形成用加热器，晶体形成装置及晶体形成方法
公开(公告)号：US20050081779A1
公开(公告)日：2005-04-21
申请号：US10503721
申请日：2003-09-08
申请人： Susumu Sonokawa , Ryoji Hoshi , Wataru Sato , Tomohiko Ohta
发明人： Susumu Sonokawa , Ryoji Hoshi , Wataru Sato , Tomohiko Ohta
IPC分类号： C30B15/14 , C30B29/06 , C30B35/00 , C30B15/00 , C30B13/00 , C30B21/04 , C30B21/06 , C30B27/02 , C30B28/08 , C30B28/10 , C30B30/04
CPC分类号： C30B15/30 , C30B15/14 , C30B30/04 , C30B35/00 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.
摘要翻译：本发明提供了一种通过切克劳斯基法制造晶体的加热器，其至少包括通过电阻加热供给电流的端子部分和发热部分，并且被布置成围绕包含原料熔体的坩埚，其中加热器具有在晶体制造期间在使用时在变形后对原料熔体均匀发热分布。因此，在晶体制造时，由于加热器的发热部的形状的变形，能够防止因原料熔融体的不均匀温度引起的单晶化和不稳定的晶体质量的阻碍。

22. 发明授权

US06872250B2 Microvolume crystallization method employing multiple lumens 失效
标题翻译：采用多流明的微量体积结晶法
公开(公告)号：US06872250B2
公开(公告)日：2005-03-29
申请号：US10060853
申请日：2002-01-29
申请人： Peter R. David , Nathaniel E. David
发明人： Peter R. David , Nathaniel E. David
IPC分类号： C30B7/00 , G01N25/14 , C30B7/08
CPC分类号： G01N25/147 , B01J2219/00274 , B33Y80/00 , C30B7/00 , C30B29/58 , Y10S117/90 , Y10T117/10 , Y10T117/1008 , Y10T117/1024
摘要： A method for determining crystallization conditions for a material, the method comprising: taking a microfluidic device comprising one or more lumens having microvolume dimensions and a plurality of different crystallization samples within the one or more lumens, the plurality of crystallization samples comprising a material to be crystallized and crystallization conditions that vary among the plurality of crystallization samples; transporting the plurality of different crystallization samples within the lumens; and identifying a precipitate or crystal formed in the one or more lumens.
摘要翻译：一种用于确定材料的结晶条件的方法，所述方法包括：获取包含一个或多个具有微体积尺寸的内腔和在所述一个或多个腔内的多个不同结晶样品的微流体装置，所述多个结晶样品包括待在多个结晶样品中变化的结晶和结晶条件; 在腔内输送多个不同的结晶样品; 以及鉴定在所述一个或多个内腔中形成的沉淀物或晶体。

23. 发明申请

US20050048383A1 Crystallization apparatus and crystallization method 失效
标题翻译：结晶装置和结晶方法
公开(公告)号：US20050048383A1
公开(公告)日：2005-03-03
申请号：US10958396
申请日：2004-10-06
申请人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
发明人： Yukio Taniguchi , Masakiyo Matsumura , Hirotaka Yamaguchi , Mikihiko Nishitani , Susumu Tsujikawa , Yoshinobu Kimura , Masayuki Jyumonji
IPC分类号： B23K26/06 , H01L21/20 , H01L21/268 , H01L21/336 , H01L29/786 , H01L31/036 , G21K5/10 , H01L29/04 , G03F9/00 , H01J37/08
CPC分类号： H01L21/02678 , B23K26/066 , H01L21/2026 , H01L21/268 , H01L29/66757 , H01L29/78675 , Y10S117/90 , Y10S117/904 , Y10S117/905 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A crystallization apparatus includes an illumination system which illuminates a phase-shift mask and an image-forming optical system arranged in an optical path between the phase-shift mask and a semiconductor film. The semiconductor film is irradiated with a light beam having a light intensity distribution of inverted peak patterns whose light intensity is the lowest in portions corresponding to phase shift sections to form a crystallized semiconductor film. The image-forming optical system is located to optically conjugate the phase-shift mask and the semiconductor film and has an aberration corresponding to the given wavelength range to form a light intensity distribution of inverted peak patterns with no swell of intensity in the middle portion.
摘要翻译：结晶装置包括照射相移掩模的照明系统和布置在相移掩模和半导体膜之间的光路中的成像光学系统。用对应于相移部分的部分的光强度最低的具有反相峰值图案的光强度分布的光束照射半导体膜，以形成结晶的半导体膜。成像光学系统被定位为将相移掩模和半导体膜光学共轭，并且具有对应于给定波长范围的像差，以形成中间部分没有强度波动的反向峰值图案的光强度分布。

24. 发明申请

US20050028729A1 Laser annealing apparatus 有权
公开(公告)号：US20050028729A1
公开(公告)日：2005-02-10
申请号：US10885675
申请日：2004-07-08
申请人： Yun-Ho Jung
发明人： Yun-Ho Jung
IPC分类号： C30B13/00 , C30B13/24 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： C30B29/06 , C30B13/24 , Y10S117/90 , Y10T117/10
摘要： A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the silicon substrate on a movable stage. The device includes a laser source, an optical system patterning the shape and energy of a laser beam irradiated from the laser source, a vacuum chuck supporting a silicon substrate, and a movable stage supporting the vacuum chuck as well as transferring the vacuum chuck in a predetermined direction. Accordingly, the apparatus improves the degree of crystallization because it is able to uniformly carry out SLS on an entire surface of the silicon substrate.

25. 发明授权

US06852162B2 Laser annealing apparatus 有权
标题翻译：激光退火装置
公开(公告)号：US06852162B2
公开(公告)日：2005-02-08
申请号：US10211570
申请日：2002-08-05
申请人： Yun-Ho Jung
发明人： Yun-Ho Jung
IPC分类号： C30B13/00 , C30B13/24 , C30B1/00
CPC分类号： C30B29/06 , C30B13/24 , Y10S117/90 , Y10T117/10
摘要： A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the silicon substrate on a movable stage. The device includes a laser source, an optical system patterning the shape and energy of a laser beam irradiated from the laser source, a vacuum chuck supporting a silicon substrate, and a movable stage supporting the vacuum chuck as well as transferring the vacuum chuck in a predetermined direction. Accordingly, the apparatus improves the degree of crystallization because it is able to uniformly carry out SLS on an entire surface of the silicon substrate.
摘要翻译：公开了一种用于顺序侧向固化（SLS）的激光退火装置，以通过在激光束照射期间使硅衬底的位错最小化来在整个硅衬底上均匀地结晶硅。在激光退火期间，真空吸盘将硅衬底保持在可动台上。该装置包括激光源，对从激光源照射的激光束的形状和能量进行图案化的光学系统，支撑硅基板的真空卡盘以及支撑真空卡盘的可移动台以及将真空卡盘传送到预定方向。因此，由于能够在硅基板的整个表面均匀地进行SLS，所以能够提高结晶度。

26. 发明授权

US06824609B2 Liquid phase growth method and liquid phase growth apparatus 失效
标题翻译：液相生长方法和液相生长装置
公开(公告)号：US06824609B2
公开(公告)日：2004-11-30
申请号：US10229123
申请日：2002-08-28
申请人： Tetsuro Saito , Katsumi Nakagawa , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Masaki Mizutani
发明人： Tetsuro Saito , Katsumi Nakagawa , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida , Masaki Mizutani
IPC分类号： C30B1900
CPC分类号： C30B19/064 , C30B19/02 , C30B19/06 , C30B29/06 , Y10S117/90 , Y10T117/1016 , Y10T117/1024
摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.
摘要翻译：提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

27. 发明申请

US20040226317A1 Durable CFC support crucible for high-temperature processes in the pulling of semiconductor single crystals 失效
标题翻译：耐用的CFC支持坩埚用于拉伸半导体单晶中的高温工艺
公开(公告)号：US20040226317A1
公开(公告)日：2004-11-18
申请号：US10846785
申请日：2004-05-12
申请人： SGL Carbon AG
发明人： Dieter Kompalik
IPC分类号： C30B035/00 , C03C027/02 , C30B001/00 , C30B015/00 , C30B021/06 , C30B027/02 , C30B028/10 , C30B030/04
CPC分类号： C30B15/10 , Y10S117/90 , Y10T117/10 , Y10T117/1052
摘要： In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials, carbon fiber-reinforced carbon (CFC), combinations thereof or carbon materials coated with silicon carbide (SiC) are used. The working life of a CFC support crucible can be extended by a partial thickening of the support crucible walls affected by corrosion processes.
摘要翻译：为了通过切克劳斯基（Czochralski）法拉制半导体单晶，使用了需要具有高温能力的支撑坩埚的石英玻璃坩埚。这种支撑坩埚可以由各种材料制成，在这种情况下，使用石墨材料，碳纤维增强碳（CFC），其组合或碳化硅（SiC）涂覆的碳材料。通过受腐蚀过程影响的支撑坩埚壁的部分增厚，可以延长CFC支撑坩埚的工作寿命。

28. 发明授权

US06797061B2 Quartz glass crucible for pulling up silicon single crystal and production method therefor 有权
标题翻译：用于提升硅单晶的石英玻璃坩埚及其制造方法
公开(公告)号：US06797061B2
公开(公告)日：2004-09-28
申请号：US09987463
申请日：2001-11-14
申请人： Tatsuhiro Sato , Shigeo Mizuno , Yasuo Ohama
发明人： Tatsuhiro Sato , Shigeo Mizuno , Yasuo Ohama
IPC分类号： C30B1510
CPC分类号： C03B19/095 , C30B15/10 , C30B35/002 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible comprises a crucible body constituted of a semi-transparent quartz glass layer and a transparent quartz glass layer formed on the inner wall surface of the crucible bass body and no expanded bubbles equal to ro more than 0.5 mm in diameter are present in a layer 1 mm in depth from an inner surface of the quartz glass crucible after the silicon single crystal is pulled up using the quartz glass crucible.
摘要翻译：提供一种用于提拉硅单晶的石英玻璃坩埚，其不仅可以拉伸无缺陷的硅单晶，而且可以大大提高单一的结晶比率及其制造方法。石英玻璃坩埚包括由半透明石英玻璃层和形成在坩埚低音体的内壁表面上的透明石英玻璃层构成的坩埚体，并且没有等于直径大于0.5mm的ro的膨胀气泡存在于在使用石英玻璃坩埚拉起硅单晶之后，从石英玻璃坩埚的内表面开始深度为1mm的层。

29. 发明授权

US06758899B2 Crystal growth vessel and crystal growth method 失效
标题翻译：晶体生长容器和晶体生长方法
公开(公告)号：US06758899B2
公开(公告)日：2004-07-06
申请号：US10131042
申请日：2002-04-25
申请人： Yoshiaki Hagi , Shigeto Kato
发明人： Yoshiaki Hagi , Shigeto Kato
IPC分类号： C30B2504
CPC分类号： C30B29/40 , C30B9/00 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/14 , C30B29/42 , C30B29/62 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A crystal growth vessel for growing a crystal within a main container has a crystal growth starting portion in which the crystal starts to grow, whereas the crystal growth starting portion is formed from a material having a thermal conductivity higher than that of a material of the main container.
摘要翻译：用于在主容器内生长晶体的晶体生长容器具有其中晶体开始生长的晶体生长起始部分，而晶体生长起始部分由导热率高于主体材料的导热率的材料形成容器。

30. 发明申请

US20040055531A1 Heat shield assembly for a crystal puller 失效
公开(公告)号：US20040055531A1
公开(公告)日：2004-03-25
申请号：US10252027
申请日：2002-09-20
申请人： MEMC Electronic Materials, Inc.
发明人： Lee W. Ferry , Richard G. Schrenker , Hariprasad Sreedharamurthy
IPC分类号： C30B023/00 , C30B025/00 , C30B028/12 , C30B028/14 , C30B015/00 , C30B021/06 , C30B027/02 , C30B028/10 , C30B030/04
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式