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21. 发明申请

US20160039163A1 HOT ISOSTATIC PRESSING DEVICE 有权
标题翻译：热静压机
公开(公告)号：US20160039163A1
公开(公告)日：2016-02-11
申请号：US14782949
申请日：2014-05-02
申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)
发明人： Tomomitsu NAKAI , Katsumi WATANABE , Makoto YONEDA
IPC分类号： B30B11/00 , B28B3/00
CPC分类号： B30B11/002 , B22F3/15 , B22F2003/153 , B22F2203/11 , B28B3/006 , F27B5/04 , F27B5/06 , F27B5/16 , F27B17/0025 , F27D7/02 , F27D7/04 , F27D7/06 , F27D9/00 , H01L21/67109
摘要： Provided is a hot isostatic pressing (HIP) device (1) that can efficiently cool a hot zone during HIP processing while restraining temperatures in the lower part of a high-pressure container. This HIP device (1) is provided with the following: gas-impermeable casings (3, 4) that surround an object to be processed (W); a heating unit (7) that is disposed inside these casings and forms a hot zone around the object to be processed (W); a high-pressure container (2); and a cooling unit that guides a pressure-medium gas cooled on the outside of the casings into the hot zone to cool the hot zone. The cooling unit comprises the following: a gas introduction unit that introduces the pressure-medium gas that has been cooled on the outside of the casings (3, 4) into the hot zone; and a cooling promotion unit (37) that cools the pressure medium gas by causing the pressure-medium gas that has been cooled on the outside of the casings to exchange heat with a base (11) of the high-pressure container (2).
摘要翻译：提供了一种热等静压（HIP）装置（1），其能够在HIP处理期间有效地冷却热区，同时抑制高压容器的下部的温度。该HIP装置（1）具有以下装置：围绕待加工物体（W）的气体不可渗透的壳体（3,4）; 加热单元（7），其设置在这些壳体的内部并在待处理物体（W）周围形成热区域; 高压容器（2）; 以及冷却单元，其将在壳体外部冷却的压力介质气体引导到热区域中以冷却热区域。冷却单元包括：将已经冷却到壳体（3）的外部的压力介质气体引入热区的气体引入单元; 以及冷却促进单元，其通过使已经在壳体外部被冷却的压力介质气体与高压容器（2）的基座（11）进行热交换来对压力介质气体进行冷却。

22. 发明申请

US20150367438A1 PRE-HEATER LATCH AND SEAL MECHANISM FOR WAVE SOLDER MACHINE AND RELATED METHOD 有权
标题翻译：波峰焊机的预热器和密封机构及相关方法
公开(公告)号：US20150367438A1
公开(公告)日：2015-12-24
申请号：US14842226
申请日：2015-09-01
申请人： Illinois Tool Works Inc.
发明人： Jonathan M. Dautenhahn
IPC分类号： B23K3/08 , H05K3/34 , B23K3/047 , B23K3/06 , B23K1/08 , B23K1/00
CPC分类号： B23K3/08 , B23K1/0016 , B23K1/008 , B23K1/085 , B23K3/047 , B23K3/0653 , B23K3/082 , F27B9/029 , F27B17/0025 , H01T23/00 , H05K3/34 , H05K3/341 , H05K3/3468 , H05K2203/044 , Y10T29/49826
摘要： A wave solder machine includes a pre-heating station, a wave soldering station, and a conveyor to transport substrates through a tunnel passing through the pre-heating station and the wave soldering station. The tunnel has a substantially oxygen-free environment. The pre-heating station includes a pre-heater including a support frame assembly, and a heater assembly supported by the support frame assembly. The heater assembly is slidably coupled to the support frame assembly between an operational position and a non-operational position. The pre-heater further includes a seal disposed between the heater assembly and the support frame assembly. The seal provides a gas-tight seal when the heater assembly is in the operational position to prevent atmosphere from entering the tunnel thereby preserving the substantially oxygen-free environment within the tunnel.
摘要翻译：波峰焊机包括预热站，波峰焊站和输送机，以通过穿过预热站和波峰焊站的隧道输送基板。隧道具有基本上无氧的环境。预热站包括预热器，其包括支撑框架组件和由支撑框架组件支撑的加热器组件。加热器组件在操作位置和非操作位置之间可滑动地联接到支撑框架组件。预热器还包括设置在加热器组件和支撑框架组件之间的密封件。当加热器组件处于操作位置时，密封件提供气密密封，以防止大气进入隧道，从而保持隧道内基本上无氧的环境。

23. 发明申请

US20150227050A1 METHOD AND APPARATUS FOR BAKING PHOTORESIST PATTERNS 有权
标题翻译：烘焙光栅图案的方法和装置
公开(公告)号：US20150227050A1
公开(公告)日：2015-08-13
申请号：US14176314
申请日：2014-02-10
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Chin-Min LIN , De-Fang HUANG , Ching-Hui TSAO
IPC分类号： G03F7/40 , H01L21/67 , H01L21/66 , H01L21/027
CPC分类号： G03F7/40 , F27B5/14 , F27B17/0025 , H01L21/0271 , H01L21/67103 , H01L21/67115 , H01L21/67748
摘要： In accordance with some embodiments, a method and an apparatus for baking photoresist patterns are provided. The method includes putting a wafer over a heating assembly. A photoresist pattern is formed over a top surface of the wafer. The method further includes curing the wafer from the top surface of the wafer by a curing assembly while heating the wafer from a bottom surface of the wafer by a heating assembly.
摘要翻译：根据一些实施例，提供了一种用于烘烤光刻胶图案的方法和设备。该方法包括将晶片放在加热组件上。在晶片的顶表面上形成光刻胶图形。该方法还包括通过固化组件从晶片的顶表面固化晶片，同时通过加热组件从晶片的底表面加热晶片。

24. 发明授权

US09105672B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US09105672B2
公开(公告)日：2015-08-11
申请号：US13561373
申请日：2012-07-30
申请人： Hiroyuki Matsuura
发明人： Hiroyuki Matsuura
IPC分类号： F27D3/12 , H01L21/67 , F27B17/00 , H01L21/677
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/6719 , H01L21/67757
摘要： A heat treatment apparatus for performing heat treatment of processing objects at a time without changing the interior configuration of a conventional clean room even when the processing objects are large-sized. The heat treatment apparatus is installed in a clean room. The heat treatment apparatus includes: a heat treatment furnace including a vertical processing chamber having a furnace opening at the top and adapted to house and heat-treat processing objects, a heat insulator that surrounds the circumference of the processing chamber, and a heater provided on the inner peripheral surface of the heat insulator; a lid for closing the furnace opening of the processing chamber; and a holding tool, hung via a heat-retaining cylinder from the lid, for holding the processing objects in multiple stages. The heat treatment furnace of the heat treatment apparatus, for the most part in the height direction, lies beneath the floor of the clean room.
摘要翻译：即使在处理对象大的情况下，也能一次进行处理对象的热处理而不改变现有的洁净室的内部结构的热处理装置。热处理装置安装在洁净室内。该热处理设备包括：热处理炉，其包括垂直处理室，其具有在顶部具有炉开口并适于容纳和热处理物体的垂直处理室，围绕处理室周围的隔热件和设置在该处理室周围的加热器绝热体的内周面; 用于关闭处理室的炉开口的盖子; 以及通过来自盖的保温筒悬挂的用于将处理对象保持多级的保持工具。热处理设备的热处理炉大部分位于高度方向，位于洁净室的地板下面。

25. 发明授权

US09105591B2 Rotatable and tunable heaters for semiconductor furnace 有权
标题翻译：适用于半导体炉的可旋转和可调加热器
公开(公告)号：US09105591B2
公开(公告)日：2015-08-11
申请号：US13964150
申请日：2013-08-12
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Zin-Chang Wei , Hsin-Hsien Wu , Chun-Lin Chang
IPC分类号： F27D11/00 , H01L21/31 , H01L21/44 , H01L21/324 , F27B17/00 , H01L21/67
CPC分类号： H01L21/324 , F27B17/0025 , H01L21/67109
摘要： A method for forming a layer of material on a semiconductor wafer using a semiconductor furnace that includes a thermal reaction chamber having a heating system having a plurality of rotatable heaters for providing a heating zone with uniform temperature profile is provided. The method minimizes temperature variations within the thermal reaction chamber and promotes uniform thickness of the film deposited on the wafers.
摘要翻译：提供了一种使用半导体炉在半导体晶片上形成材料层的方法，该半导体炉包括具有多个可旋转加热器的加热系统的热反应室，用于提供均匀温度分布的加热区。该方法使热反应室内的温度变化最小化并且促进沉积在晶片上的膜的均匀厚度。

26. 发明授权

US09097463B2 Housing for heating and use method of the same, heating jig and use method of the same, and operation method of heating device 有权
标题翻译：加热使用方法及加热夹具的使用方法及加热装置的使用方法
公开(公告)号：US09097463B2
公开(公告)日：2015-08-04
申请号：US13030471
申请日：2011-02-18
申请人： Shigeru Hanzawa , Hiroyoshi Suzumura , Tsutomu Yamamoto
发明人： Shigeru Hanzawa , Hiroyoshi Suzumura , Tsutomu Yamamoto
IPC分类号： F27B17/00 , F27D5/00 , F27B9/34 , F27B13/10 , F27D11/12
CPC分类号： F27D5/00 , F27B9/34 , F27B13/10 , F27B17/0025 , F27D11/12
摘要： A heating storage structure 1 includes a plurality of mounting parts 5 each including a mounting face 9 on which articles 31 to be heated are mounted, which is a part of the surface of the mounting part; and a fixing part 7 to which the plurality of mounting parts 5 are detachably fixed so that the plurality of mounting parts 5 are stacked while each of spaces S1 to S4 is left between the mounting face 9 of one of the mounting parts 5 and the mounting part 5 disposed adjacent to the one mounting part 5, and the plurality of mounting parts 5 include a mounting part 5b provided with the mounting face 9 having a thermal emissivity which is different from that of the mounting face 9 of another mounting part 5a.
摘要翻译：加热存储结构1包括多个安装部件5，每个安装部件5均包括安装面9，安装面9安装在该安装面9上，作为安装部的表面的一部分; 以及固定部件7，多个安装部件5可拆卸地固定到多个安装部件5，以便在安装部件5中的一个安装部件5的安装面9和安装部件5的安装面设置在与一个安装部5相邻的部分5，并且多个安装部5包括安装部5b，安装部5b具有与另一安装部5a的安装面9的热发射率不同的安装面9。

27. 发明申请

US20150211796A1 SUPPORT MECHANISM AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：支撑机构和基板加工设备
公开(公告)号：US20150211796A1
公开(公告)日：2015-07-30
申请号：US14604866
申请日：2015-01-26
申请人： Tokyo Electron Limited
发明人： Hiroshi Kikuchi , Yoshiyuki Kobayashi
IPC分类号： F27D1/18
CPC分类号： F27D1/1808 , F27B17/0025
摘要： The present disclosure provides a support mechanism for supporting a cover that performs sealing of a furnace opening of a heat treatment furnace or release the sealing by being moved up or down by an elevating unit. The support mechanism includes a first elastic body having a first elastic modulus; and a second elastic body having a second elastic modulus larger than the first elastic modulus. A reaction force in relation to the first elastic body is applied to the cover when the cover abuts on the furnace opening by being moved up by the elevating unit, and a reaction force in relation to the first elastic body and the second elastic body is applied to the cover after the cover abuts on the furnace opening by being moved up by the elevating unit.
摘要翻译：本公开提供了一种用于支撑执行热处理炉的炉口的密封的盖的支撑机构，或者通过升降单元向上或向下移动来释放密封。支撑机构包括具有第一弹性模量的第一弹性体; 以及具有大于第一弹性模量的第二弹性模量的第二弹性体。当盖子被升降单元向上移动时，当盖子靠近炉子开口时，相对于第一弹性体的反作用力被施加到盖上，并施加相对于第一弹性体和第二弹性体的反作用力在盖子通过升降单元向上移动之后抵靠在炉子开口上的盖子。

28. 发明申请

US20150206786A1 TOP WAFER ROTATION AND SUPPORT 有权
标题翻译：顶部旋转和支撑
公开(公告)号：US20150206786A1
公开(公告)日：2015-07-23
申请号：US14674049
申请日：2015-03-31
申请人： Applied Materials, Inc.
发明人： Oleg SEREBRYANOV , Joseph M. RANISH , Aaron Muir HUNTER
IPC分类号： H01L21/687 , H01L21/67 , H05B3/00 , H01L21/324
CPC分类号： H01L21/68764 , F27B17/0025 , F27D11/00 , H01L21/324 , H01L21/67115 , H01L21/68785 , H05B3/0047
摘要： Embodiments of the present disclosure provide thermal processing chambers including a drive mechanism and a heating assembly disposed on opposite sides of a substrate support assembly. Particularly, the heating assembly is disposed below the substrate support assembly to process a substrate with a device side facing up and the drive mechanism is disposed above the substrate assembly.
摘要翻译：本公开的实施例提供了热处理室，其包括设置在基板支撑组件的相对侧上的驱动机构和加热组件。特别地，加热组件设置在基板支撑组件下方，以处理基板，其中装置侧朝上并且驱动机构设置在基板组件上方。

29. 发明申请

US20150118012A1 WAFER ENTRY PORT WITH GAS CONCENTRATION ATTENUATORS 审中-公开
标题翻译：带有气体浓度衰减器的进风口
公开(公告)号：US20150118012A1
公开(公告)日：2015-04-30
申请号：US14069220
申请日：2013-10-31
申请人： Lam Research Corporation
发明人： Jeffrey Alan Hawkins
IPC分类号： F27D3/00 , B25J11/00 , H01L21/677
CPC分类号： F27B17/0025 , H01L21/67126 , H01L21/6719 , H01L21/67748
摘要： The embodiments herein relate to methods and apparatus for inserting a substrate into a processing chamber. While many of the disclosed embodiments are described in relation to insertion of a semiconductor substrate into an anneal chamber with minimal introduction of oxygen, the implementations are not so limited. The disclosed embodiments are useful in many different situations where a relatively flat object is inserted through a channel into a processing volume, where it is desired that a particular gas concentration in the processing volume remain low. The disclosed embodiments use multiple cavities to serially attenuate the concentration of oxygen as the substrate moves into the processing volume of the anneal chamber. In some cases, a relatively high flow of gas originating from the anneal chamber is used. Further, a relatively low transfer speed may be used to transport the substrate into and out of the anneal chamber.
摘要翻译：本文的实施例涉及将基板插入处理室的方法和装置。尽管关于将半导体衬底以最少的氧引入将半导体衬底插入退火室来描述许多公开的实施例，但实施方式并不限于此。所公开的实施例在许多不同情况下是有用的，其中相对平坦的物体通过通道插入处理体积中，期望处理体积中的特定气体浓度保持较低。所公开的实施例在衬底移动到退火室的处理体积中时使用多个空腔来串联衰减氧的浓度。在一些情况下，使用源自退火室的相当高的气体流。此外，可以使用相对较低的转印速度来将衬底输送到退出室中和从退出室排出。

30. 发明授权

US08993933B2 Top wafer rotation and support 有权
标题翻译：顶级晶圆旋转和支撑
公开(公告)号：US08993933B2
公开(公告)日：2015-03-31
申请号：US13749550
申请日：2013-01-24
申请人： Applied Materials, Inc.
发明人： Oleg Serebryanov , Joseph M. Ranish , Aaron Muir Hunter
IPC分类号： F27B5/14 , F27D11/00 , F27B17/00 , H01L21/67 , H01L21/687 , F26B19/00
CPC分类号： H01L21/68764 , F27B17/0025 , F27D11/00 , H01L21/324 , H01L21/67115 , H01L21/68785 , H05B3/0047
摘要： Embodiments of the present invention provide thermal processing chambers including a drive mechanism and a heating assembly disposed on opposite sides of a substrate support assembly. Particularly, the heating assembly is disposed below the substrate support assembly to process a substrate with a device side facing up and the drive mechanism is disposed above the substrate assembly.
摘要翻译：本发明的实施例提供热处理室，其包括设置在基板支撑组件的相对侧上的驱动机构和加热组件。特别地，加热组件设置在基板支撑组件下方，以处理基板，其中装置侧朝上并且驱动机构设置在基板组件上方。

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