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1. 发明申请

US20150118012A1 WAFER ENTRY PORT WITH GAS CONCENTRATION ATTENUATORS 审中-公开
标题翻译：带有气体浓度衰减器的进风口
公开(公告)号：US20150118012A1
公开(公告)日：2015-04-30
申请号：US14069220
申请日：2013-10-31
申请人： Lam Research Corporation
发明人： Jeffrey Alan Hawkins
IPC分类号： F27D3/00 , B25J11/00 , H01L21/677
CPC分类号： F27B17/0025 , H01L21/67126 , H01L21/6719 , H01L21/67748
摘要： The embodiments herein relate to methods and apparatus for inserting a substrate into a processing chamber. While many of the disclosed embodiments are described in relation to insertion of a semiconductor substrate into an anneal chamber with minimal introduction of oxygen, the implementations are not so limited. The disclosed embodiments are useful in many different situations where a relatively flat object is inserted through a channel into a processing volume, where it is desired that a particular gas concentration in the processing volume remain low. The disclosed embodiments use multiple cavities to serially attenuate the concentration of oxygen as the substrate moves into the processing volume of the anneal chamber. In some cases, a relatively high flow of gas originating from the anneal chamber is used. Further, a relatively low transfer speed may be used to transport the substrate into and out of the anneal chamber.
摘要翻译：本文的实施例涉及将基板插入处理室的方法和装置。尽管关于将半导体衬底以最少的氧引入将半导体衬底插入退火室来描述许多公开的实施例，但实施方式并不限于此。所公开的实施例在许多不同情况下是有用的，其中相对平坦的物体通过通道插入处理体积中，期望处理体积中的特定气体浓度保持较低。所公开的实施例在衬底移动到退火室的处理体积中时使用多个空腔来串联衰减氧的浓度。在一些情况下，使用源自退火室的相当高的气体流。此外，可以使用相对较低的转印速度来将衬底输送到退出室中和从退出室排出。

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