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21. 发明申请

US20170338037A1 PLANAR TRANSFORMER COMPONENTS COMPRISING ELECTROPHORETICALLY DEPOSITED COATING 审中-公开
公开(公告)号：US20170338037A1
公开(公告)日：2017-11-23
申请号：US15528000
申请日：2016-11-03
申请人： PAYTON PLANAR MAGNETICS LTD.
发明人： Eli KATZIR , Yakov KOREN , Amir YATIV , Peter HOPE
IPC分类号： H01F41/04 , C08K3/08 , H01F27/28 , H01F27/25 , B32B15/20 , C23C22/63 , C23C22/34 , C23C22/10 , C25D11/02 , H01F27/06 , H01F5/00
CPC分类号： H01F41/042 , B32B15/00 , B32B15/20 , C08K3/08 , C23C22/10 , C23C22/34 , C23C22/63 , C25D11/02 , C25D13/00 , C25D13/22 , C25D15/02 , C25F1/00 , H01F5/003 , H01F27/06 , H01F27/25 , H01F27/2804 , H01F2027/2819
摘要： Provided is an electrically insulated component for use in a planar transformer. The insulated component may include a planar transformer conductive component having a first surface, a second surface and a plurality of edges. The insulated component may also include a first layer including an oxidized metal coating, as well as a second layer including an electrophoretically deposited (EPD) insulating coating. The EDP coating may include a polymer and an inorganic material. The first layer and the second layer may cover at least the first surface and the plurality of edges of the conductive component and the first layer may be disposed between the conductive component and the second layer. Also provided is a method of manufacturing of the electrically insulated component.

22. 发明申请

US20150299628A1 Composition for Removing and Preventing Formation of Oxide on the Surface of Metal Wire 有权
标题翻译：用于去除和防止金属线表面氧化物形成的组合物
公开(公告)号：US20150299628A1
公开(公告)日：2015-10-22
申请号：US14648647
申请日：2013-07-24
申请人： LTC Co., Ltd.
发明人： Ho Sung Choi , Kwang Hyun Ryu , Jong Il Bae , Jong Soon Lee , Hye Sung Yang , Sang Ku Ha
IPC分类号： C11D11/00 , C11D7/50 , C11D7/34
CPC分类号： C11D11/0029 , C11D3/2003 , C11D3/2041 , C11D3/2068 , C11D7/3209 , C11D7/34 , C11D7/5004 , C11D7/5013 , C11D7/5022 , C11D11/0047 , C23C22/02 , C23C22/63 , C23F11/165 , C23G1/20 , H01L21/02068
摘要： The present invention proposes a method for removing an oxide formed on the surface of a copper film used in the process of manufacturing a circuit for a semiconductor, an organic light-emitting diode, an LED, or a liquid crystal display without causing corrosion on a lower metal film. The composition including corrosive amine may remove a metal oxide depending on the content of additive ranging from 0.01 to 10% regardless of the content of ultrapure water. A polar solvent other than the corrosive amine may efficiently remove an oxide from the surface of the metal when the same contains water and 0.01 to 20% of the additive.
摘要翻译：本发明提出一种在半导体电路，有机发光二极管，LED或液晶显示器的制造工艺中使用的用于去除形成在铜膜表面上的氧化物的方法，而不会导致腐蚀下金属膜。包含腐蚀性胺的组合物可以根据0.01至10％的添加剂含量除去金属氧化物，而与超纯水的含量无关。当腐蚀性胺类除极性溶剂含有水和0.01〜20％的添加剂时，可以有效地从金属表面除去氧化物。

23. 发明授权

US08927669B2 Copolymers, method for producing them and their use for treating surfaces 有权
标题翻译：共聚物，它们的制备方法及其用于处理表面的用途
公开(公告)号：US08927669B2
公开(公告)日：2015-01-06
申请号：US12160371
申请日：2007-01-05
申请人： Thomas Pfeiffer , Helmut Witteler , Frank Dietsche , Thomas Heidenfelder , Frank-Olaf Mähling , Andreas Fechtenkötter , Michael Ehle , Fabio Nicolini
发明人： Thomas Pfeiffer , Helmut Witteler , Frank Dietsche , Thomas Heidenfelder , Frank-Olaf Mähling , Andreas Fechtenkötter , Michael Ehle , Fabio Nicolini
IPC分类号： C08F230/02 , C09D5/08 , C08F210/02 , C23C22/78 , C23C22/06 , C23C22/05 , C23C22/07 , C23C22/63 , C23C22/62 , C23C22/60 , C08F220/06
CPC分类号： C09D5/08 , C08F8/44 , C08F210/02 , C08F220/06 , C08F230/02 , C23C22/05 , C23C22/06 , C23C22/07 , C23C22/60 , C23C22/62 , C23C22/63 , C23C22/78 , Y10T428/31692 , C08F8/12
摘要： Copolymers comprising as comonomers in copolymerized form: (a) ethylene, (b) one or more compounds of the general formula I (c) if appropriate, one or more alkenylphosphonic diesters, (d) if appropriate, one or more other free-radically copolymerizable comonomers, whose variables are defined as follows: R1 is selected from hydrogen and unbranched and branched C1-C10-alkyl, R2 is selected from hydrogen and unbranched and branched C1-C10-alkyl, R3 is selected from hydrogen, phenyl, benzyl, and unbranched and branched C1-C10-alkyl and unbranched and branched hydroxy-C2-C10-alkyl, as free acid or partially or completely neutralized with alkali metal, alkaline earth metal, ammonia or organic amine.
摘要翻译：包含共聚形式的共聚单体的共聚物：（a）乙烯，（b）一种或多种通式I（c）的化合物，如果合适，一种或多种链烯基膦酸二酯，（d）如果合适的话，一种或多种其它自由基可共聚的共聚单体，其变量定义如下：R1选自氢和无支链和支链C 1 -C 10 - 烷基，R 2选自氢和无支链和支链C 1 -C 10 - 烷基，R 3选自氢，苯基，苄基，和无支链和支链的C 1 -C 10 - 烷基和无支链羟基-C 2 -C 10烷基，作为游离酸，或部分或完全用碱金属，碱土金属，氨或有机胺中和。

24. 发明申请

US20130048598A1 PLATING METHOD OF CIRCUIT SUBSTRATE, PRODUCTION METHOD OF PLATED CIRCUIT SUBSTRATE, AND SILVER ETCHING LIQUID 有权
标题翻译：电路基板的镀覆方法，电路基板的制造方法，以及银蚀刻液
公开(公告)号：US20130048598A1
公开(公告)日：2013-02-28
申请号：US13527751
申请日：2012-06-20
申请人： Emi USHIODA , Tetsuo IMAI
发明人： Emi USHIODA , Tetsuo IMAI
IPC分类号： H05K3/10 , C23F1/10
CPC分类号： C23G1/103 , C23C18/1216 , C23C18/1651 , C23C18/1844 , C23C22/52 , C23C22/63 , C23G1/20 , H05K1/0306 , H05K3/1291 , H05K3/246 , H05K2203/0796
摘要： Provided is a plating method of a circuit substrate comprising a conductive pattern in which a metal layer containing at least silver and copper is exposed on an outer surface. The plating method comprises: step (A) of treating the circuit substrate with a first liquid agent containing an oxidizing agent; step (B) of treating the circuit substrate after the step (A) with a second liquid agent which dissolves copper oxide, and thereby removing copper oxide from the conductive pattern's surface; step (C) of treating the circuit substrate after the step (B) with a third liquid agent whose rate of dissolving silver oxide (I) at 25° C. is 1000 times or more faster than its rate of dissolving copper (0) at 25° C., and thereby removing silver oxide from the conductive pattern's surface; and step (D) of performing electroless plating on the conductive pattern of the circuit substrate after the step (C).
摘要翻译：提供一种电路基板的电镀方法，该电路基板包括导体图案，其中至少含有银和铜的金属层在外表面上露出。电镀方法包括：用含有氧化剂的第一液体试剂处理电路基板的工序（A）在步骤（A）之后用溶解氧化铜的第二液体试剂处理电路基板的步骤（B），从而从导电图案的表面除去氧化铜; 在步骤（B）之后用第三液体试剂处理电路基板的步骤（C），其中溶解氧化银（I）在25℃下的速率比其溶解铜（0）的速率快1000倍或更快 25℃，从而从导电图案的表面除去氧化银; 以及在步骤（C）之后在电路基板的导电图案上进行无电镀的步骤（D）。

25. 发明申请

US20110186221A1 Nano-Oxide Process for Bonding Copper/Copper Alloy and Resin 有权
标题翻译：用于接合铜/铜合金和树脂的纳米氧化物工艺
公开(公告)号：US20110186221A1
公开(公告)日：2011-08-04
申请号：US12697425
申请日：2010-02-01
申请人： Ming De Wang , Steven A. Castaldi , Kesheng Feng
发明人： Ming De Wang , Steven A. Castaldi , Kesheng Feng
IPC分类号： B32B7/12 , C09D5/00 , C08K5/32
CPC分类号： B32B7/12 , B32B7/04 , B32B15/08 , B32B15/20 , B32B27/06 , B32B2255/06 , B32B2255/205 , B32B2255/24 , B32B2307/50 , B32B2307/732 , B32B2457/08 , C23C22/63 , C23C22/78 , C23C22/83 , H05K3/385 , H05K3/388 , H05K2203/0315
摘要： A method of increasing adhesion between a copper or copper alloy layer and a polymeric resin. The method includes the steps of a) applying a pre-dip composition to the copper layer; b) applying a nano-oxide composition to the treated copper layer, c) applying a post-dip composition to the nano-oxide treated surface, and d) bonding a resin to the treated copper surface. The nano-oxide composition comprises (i) a chlorite; (ii) a caustic; (iii) a phosphate salt; (iv) an organic nitro compound; and (v) a thio compound. The post-dip composition is an alkaline solution that comprises (i) a phosphate salt; (ii) a source of molybdenum ions; and (iii) a thiazole. The process of the invention is useful for improving the bond between copper and a resin, including high Tg resins, halogen-free resins, and high speed/lost resins.
摘要翻译：提高铜或铜合金层与聚合物树脂之间粘合力的方法。该方法包括以下步骤：a）将预浸组合物施加到铜层; b）向经处理的铜层施加纳米氧化物组合物，c）将浸渍后组合物施加到纳米氧化物处理的表面上，以及d）将树脂粘合到经处理的铜表面。纳米氧化物组合物包含（i）亚氯酸盐; （ii）苛性碱; （iii）磷酸盐; （iv）有机硝基化合物; 和（v）硫代化合物。浸渍后组合物是碱性溶液，其包含（i）磷酸盐; （ii）钼离子源; 和（iii）噻唑。本发明的方法可用于改善铜和树脂之间的键合，包括高Tg树脂，无卤素树脂和高速/失去树脂。

26. 发明授权

US07588835B2 Method of treating the surface of copper and copper 有权
标题翻译：处理铜和铜表面的方法
公开(公告)号：US07588835B2
公开(公告)日：2009-09-15
申请号：US11908329
申请日：2006-03-10
申请人： Tomoaki Yamashita , Yasuo Inoue , Masaharu Matsuura , Toyoki Ito , Akira Shimizu , Fumio Inoue , Akishi Nakaso
发明人： Tomoaki Yamashita , Yasuo Inoue , Masaharu Matsuura , Toyoki Ito , Akira Shimizu , Fumio Inoue , Akishi Nakaso
IPC分类号： B32B15/20 , C23C22/78 , C23C22/63 , C23C22/83
CPC分类号： H05K3/385 , C23C8/02 , C23C8/40 , C23C22/63 , C23C28/00 , C23C28/321 , C23C28/322 , C23C28/345 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2924/15311 , H01L2924/181 , H05K3/384 , H05K3/389 , H05K3/4644 , H05K2201/0347 , H05K2201/0373 , H05K2203/0315 , H05K2203/1157 , Y10T428/12438 , Y10T428/12771 , Y10T428/12875 , Y10T428/12903 , Y10T428/12993 , Y10T428/24917 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of treating the surface of copper is provided to ensure adhesive strength between the surface of copper and an insulating layer without forming irregularities exceeding 1 μm on the surface of copper and to improve insulation reliability between wirings. A copper whose surface is treated by the above surface treating method is also provided. The method of treating the surface of copper comprises the surface of copper comprising the steps of: forming a metal nobler than copper discretely on the surface of copper; and subsequently oxidizing the surface of copper by using an alkaline solution containing an oxidant.
摘要翻译：提供一种处理铜表面的方法，以确保铜表面和绝缘层之间的粘合强度，而不会在铜表面上形成超过1um的凹凸，并提高布线之间的绝缘可靠性。还提供了通过上述表面处理方法处理其表面的铜。处理铜的表面的方法包括铜的表面，包括以下步骤：在铜的表面上离散地形成比铜更贵的金属; 然后通过使用含有氧化剂的碱性溶液氧化铜的表面。

27. 发明授权

US07537709B2 Method for isotropic etching of copper 失效
标题翻译：铜的各向同性蚀刻方法
公开(公告)号：US07537709B2
公开(公告)日：2009-05-26
申请号：US11401898
申请日：2006-04-12
申请人： Emanuel I. Cooper , Bruce Furman , David L. Rath
发明人： Emanuel I. Cooper , Bruce Furman , David L. Rath
IPC分类号： C09K13/00
CPC分类号： C23G1/103 , C23C22/63 , C23F1/34 , H01L21/32134
摘要： Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.
摘要翻译：铜和铜合金被蚀刻以通过使用包含氧化剂，至少一种弱络合剂和至少一种用于铜或铜合金的强配位剂的混合物和水的水性组合物和水而提供均匀和光滑的表面，并且具有约6至约12以形成氧化蚀刻控制层并均匀地除去铜或铜合金; 然后用非氧化组合物除去氧化的蚀刻控制层。还提供了具有光滑上表面的铜和铜合金结构。

28. 发明申请

US20050056616A1 Method for isotropic etching of copper 失效
标题翻译：铜的各向同性蚀刻方法
公开(公告)号：US20050056616A1
公开(公告)日：2005-03-17
申请号：US10664017
申请日：2003-09-17
申请人： Emanuel Cooper , Bruce Furman , David Rath
发明人： Emanuel Cooper , Bruce Furman , David Rath
IPC分类号： C23C22/63 , C23F1/34 , C23G1/10 , H01L21/3213 , C23F1/00
CPC分类号： C23G1/103 , C23C22/63 , C23F1/34 , H01L21/32134
摘要： Copper and copper alloys are etched to provide uniform and smooth surface by employing an aqueous composition that comprises an oxidant, a mixture of at least one weak complexant and at least one strong complexant for the copper or copper alloy, and water and has a pH of about 6 to about 12 so as to form an oxidized etch controlling layer and to uniformly remove the copper or copper alloy; and then removing the oxidized etch controlling layer with a non-oxidizing composition. Copper and copper alloy structure, having smooth upper surfaces are also provided.
摘要翻译：铜和铜合金被蚀刻以通过使用包含氧化剂，至少一种弱络合剂和至少一种用于铜或铜合金的强配位剂的混合物和水的水性组合物和水而提供均匀和光滑的表面，并且具有约6至约12以形成氧化蚀刻控制层并均匀地除去铜或铜合金; 然后用非氧化组合物除去氧化的蚀刻控制层。还提供了具有光滑上表面的铜和铜合金结构。

29. 发明申请

US20040124176A1 Palsma etchingm method 审中-公开
标题翻译： Palsma蚀刻法
公开(公告)号：US20040124176A1
公开(公告)日：2004-07-01
申请号：US10419796
申请日：2003-04-22
申请人： ULTRATERA CORPORATION
发明人： Jen-Che Li , Jung-Te Lin
IPC分类号： C23F001/00 , B44C001/22 , C03C015/00 , C03C025/68
CPC分类号： H05K3/0041 , C23C22/63 , C23F4/00 , H05K2203/0315 , H05K2203/0554
摘要： A plasma etching method for etching a substrate having a resin layer and an opening in an outer copper layer covering the resin layer is disclosed to include the step of contacting the outer surface of the copper layer with a chemical substance capable of making oxidation reaction with copper so as to form an oxide layer on the outer surface of the copper layer, and the step of employing a plasma etching technique of using a gas containing oxygen to form plasma to remove resin material from the resin layer corresponding to the opening of the copper layer.
摘要翻译：公开了一种蚀刻具有覆盖树脂层的外部铜层中的树脂层和开口的基板的等离子体蚀刻方法，包括使铜层的外表面与能够与铜发生氧化反应的化学物质接触的步骤以在铜层的外表面上形成氧化物层，以及采用等离子体蚀刻技术的步骤，使用含氧气体形成等离子体以从对应于铜层的开口的树脂层中除去树脂材料。

30. 发明授权

US06322656B1 Method and composition for amine borane reduction of copper oxide to metallic copper 失效
标题翻译：胺氧化硼还原为金属铜的方法和组成
公开(公告)号：US06322656B1
公开(公告)日：2001-11-27
申请号：US08574954
申请日：1995-12-19
申请人： John Fakler , Michael Rush , Scott Campbell
发明人： John Fakler , Michael Rush , Scott Campbell
IPC分类号： B32B3100
CPC分类号： C23C22/63 , H05K3/385
摘要： An improvement in a method of bonding copper and a resin together wherein a copper oxide layer is formed on the surface of copper by the oxidation of metallic copper, the copper oxide layer is reduced to metallic copper with an aqueous reducing solution containing at least one amine borane represented by the general formula: BH3NHRR′ (wherein R and R′ are each a member selected from the group consisting of H, CH3, and CH2CH3), and the metallic copper is bonded to a resin. According to the improvement, a reducing stabilizer is added to the reducing solution in an amount sufficient to decrease consumption of the amine borane during reduction to a level less than that consumed in the absence of the reducing stabilizer during the course of the copper oxide reduction process, wherein the stabilized reduction process is initiated in a reasonable time and the metallic copper layer resulting from the stabilized reduction process is resistant to acid attack. Examples of such reducing stabilizers include thio-containing (—C(═S)NH2) compounds, triazole-containing (C2H3N3) compounds, isoxazole-containing (—C3HNO) compounds, thiazole-containing (—NCS—) compounds, imidazole-containing (—NCN—) compounds, and sulfone-containing (—SO3H) compounds.
摘要翻译：通过金属铜的氧化将铜和树脂结合在一起的方法的改进，其中通过金属铜的氧化在铜的表面上形成氧化铜层，使用含有至少一种胺的水性还原溶液将氧化铜层还原成金属铜以通式BH3NHRR'（其中R和R'各自为选自H，CH 3和CH 2 CH 3的成员）表示的硼烷，金属铜键合到树脂上。根据改进，还原稳定剂的添加量足以将还原期间胺硼烷的消耗量降低至低于在氧化铜还原过程中不存在还原稳定剂时消耗的量其中稳定的还原过程在合理的时间内开始，并且由稳定的还原过程产生的金属铜层耐酸侵蚀。这种还原稳定剂的实例包括含硫（-C（= S）NH 2）化合物，含三唑（C 2 H 3 N 3）化合物，含异唑的（-C 3 HNO）化合物，含噻唑的（-NCS-）化合物，含咪唑（-NCN-）化合物和含砜（-SO 3 H）化合物。

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