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    • 21. 发明授权
    • Dual-lensed unitary optical receiver assembly
    • 双透镜单一光接收机组件
    • US07556440B2
    • 2009-07-07
    • US12004241
    • 2007-12-20
    • Dincer BirinciogluRajesh DighdeMary NadeauDavid PiedeWenhong Qin
    • Dincer BirinciogluRajesh DighdeMary NadeauDavid PiedeWenhong Qin
    • G02B6/32G02B6/34G02B6/42G02B6/43
    • G02B6/4206G02B6/4214G02B6/43
    • A unitary optical receiver assembly is formed to include a V-groove passively aligned with a first aspheric lens (the lens formed along a surface perpendicular to the V-groove). An optical fiber is disposed along the V-groove and is used to bring the received optical signal into the unitary assembly. Upon passing through the first aspheric lens, the received optical signal will intercept a 45° turning mirror wall that directs the signal downward, through a second aspheric lens (also molded in the unitary assembly), and then into a photosensitive device. Advantageously, the photosensitive device is disposed in passive alignment with the second aspheric lens, allowing for a received signal to be coupled from an incoming optical fiber to a photosensitive device without needing any type of active alignment therebetween.
    • 单一光接收器组件形成为包括与第一非球面透镜(沿垂直于V形槽的表面形成的透镜)无源对准的V形沟槽。 光纤沿V形槽设置,用于将接收到的光信号送入整体式组件。 在通过第一非球面透镜时,接收到的光信号将截取通过第二非球面透镜(也在单一组件中模制)然后进入感光装置的向下引导信号的45°转向镜面壁。 有利地,感光装置设置成与第二非球面透镜无源对准,允许接收的信号从入射光纤耦合到感光装置,而不需要其间的任何类型的有源对准。
    • 22. 发明申请
    • Soi-based tunable laser
    • 基于Soi的可调谐激光器
    • US20090135861A1
    • 2009-05-28
    • US12291246
    • 2008-11-06
    • Mark WebsterDavid PiedePrakash Gothoskar
    • Mark WebsterDavid PiedePrakash Gothoskar
    • H01S3/10
    • H01S5/141H01S5/021H01S5/02248H01S5/02268H01S5/06256
    • A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.
    • 形成绝缘体上硅(SOI)的可调谐激光器以包括设置在形成于SOI衬底内的空腔内的增益介质(例如半导体光放大器)。 在SOI结构的表面上形成可调波长反射元件和相关的相位匹配元件,其中形成在表面SOI层中的光波导提供这些部件之间的连通。 可调波长元件被控制以调节光学波长。 单独的离散透镜元件可以用增益介质设置在空腔中,从而提供光信号到SOI波导的有效耦合。 或者,增益介质本身可以被形成为包括其端面上的点变换锥度,用于向相关联的光波导提供模式匹配的锥度。
    • 23. 发明授权
    • SOI-based opto-electronic device including corrugated active region
    • 基于SOI的光电器件包括波纹状的有源区
    • US07539358B2
    • 2009-05-26
    • US11807959
    • 2007-05-31
    • Robert Keith MontgomeryVipulkumar Patel
    • Robert Keith MontgomeryVipulkumar Patel
    • G02F1/35
    • G02F1/025G02F1/2257
    • The surface silicon layer (SOI layer) of an SOI-based optical modulator is processed to exhibit a corrugated surface along the direction of optical signal propagation. The required dielectric layer (i.e., relatively thin “gate oxide”) is formed over the corrugated structure in a manner that preserves the corrugated topology. A second silicon layer, required to form the modulator structure, is then formed over the gate oxide in a manner that follows the corrugated topology, where the overlapping portion of the corrugated SOI layer, gate oxide and second silicon layer defines the active region of the modulator. The utilization of the corrugated active region increases the area over which optical field intensity will overlap with the free carrier modulation region, improving the modulator's efficiency.
    • 处理基于SOI的光调制器的表面硅层(SOI层)沿着光信号传播的方向呈现波纹状表面。 所需的电介质层(即相对较薄的“栅极氧化物”)以保持波纹拓扑的方式形成在波纹状结构上。 形成调制器结构所需的第二硅层然后以跟随波纹拓扑的方式形成在栅极氧化物上,其中波纹SOI层,栅极氧化物和第二硅层的重叠部分限定了 调制器。 波纹有源区域的利用增加了光场强度将与自由载波调制区域重叠的面积,从而提高了调制器的效率。
    • 24. 发明授权
    • Optical modulator utilizing multi-level signaling
    • 采用多级信令的光调制器
    • US07483597B2
    • 2009-01-27
    • US11975050
    • 2007-10-17
    • Kalpendu ShastriBipin Dama
    • Kalpendu ShastriBipin Dama
    • G02F1/00G02F1/01G02F1/03G02F1/035G02B26/00
    • G02F1/2255G02F1/0123H04B10/541
    • An optical modulator is formed to include a plurality of separate electrodes disposed along one arm, the electrodes having different lengths and driven with different signals to provide for multi-level signaling (e.g., PAM-4 signaling). By using separate drivers to energize the different sections, the number of sections energized at a given point in time will define the net phase shift introduced to the optical signal. The total length of the combined modulator sections is associated with a π phase shift (180°). Each section is driven by either a digital “one” or “zero”, so as to create the multi-level modulation. An essentially equal change in power between adjacent transmitted symbols is accomplished by properly adjusting the lengths of each individual section.
    • 光学调制器被形成为包括沿着一个臂布置的多个单独的电极,电极具有不同的长度并用不同的信号驱动以提供多级信号(例如,PAM-4信令)。 通过使用单独的驱动器来激励不同的部分,在给定时间点通电的部分的数量将定义引入光信号的净相移。 组合调制器部分的总长度与pi相移(180°)相关联。 每个部分由数字“一”或“零”驱动,以创建多级调制。 通过适当调整每个单独部分的长度来实现相邻传输符号之间的功率基本上相等的变化。
    • 26. 发明申请
    • Optical Modulators With Controllable Chirp
    • 具有可控啁啾的光学调制器
    • US20110222813A1
    • 2011-09-15
    • US13032899
    • 2011-02-23
    • Mark WebsterKalpendu Shastri
    • Mark WebsterKalpendu Shastri
    • G02F1/035
    • G02F1/2257G02F1/025G02F2203/20G02F2203/25G02F2203/255
    • A semiconductor-based optical modulator is presented that includes a separate phase control section to adjust the amount of chirp present in the modulated output signal. At least one section is added to the modulator configuration and driven to create a pure “phase” signal that will is added to the output signal and modify the eiφ term inherent in the modulation function. The phase modulation control section may be located within the modulator itself (with one segment on each arm, driven by the same input signal), or may be disposed “outside” of the modulator on either the input waveguiding section or the output waveguiding section. The phase control section may be formed to comprise multiple segments (of different lengths), with the overall phase added to the propagating signal controlled by selecting the different segments to be energized to impart a phase delay to a signal propagating through the energized section(s).
    • 提出了一种基于半导体的光调制器,其包括单独的相位控制部分,用于调节调制输出信号中存在的线性调频音量。 至少一个部分被添加到调制器配置并被驱动以产生将被添加到输出信号并且修改ei&phgr的纯“相”信号。 术语固有的调制功能。 相位调制控制部分可以位于调制器本身内(每个臂上的一个段由相同的输入信号驱动),或者可以设置在输入波导部分或输出波导部分上的调制器的“外部”。 相位控制部分可以形成为包括多个段(不同长度),其中通过选择不同的被激励的段来控制传播信号的总相位,以向通过通电部分传播的信号施加相位延迟 )。
    • 27. 发明申请
    • Silicon-Based Schottky Barrier Detector With Improved Responsivity
    • 具有改善响应性的硅基肖特基势垒检测器
    • US20110221019A1
    • 2011-09-15
    • US13038470
    • 2011-03-02
    • Vipulkumar PatelPrakash GothoskarMark WebsterChristopher J. Lang
    • Vipulkumar PatelPrakash GothoskarMark WebsterChristopher J. Lang
    • H01L31/108
    • H01L31/101H01L31/1085
    • A planar, waveguide-based silicon Schottky barrier photodetector includes a third terminal in the form of a field plate to improve the responsivity of the detector. Preferably, a silicide used for the detection region is formed during a processing step where other silicide contact regions are being formed. The field plate is preferably formed as part of the first or second layer of CMOS metallization and is controlled by an applied voltage to modify the electric field in the vicinity of the detector's silicide layer. By modifying the electric field, the responsivity of the device is “tuned” so as to adjust the momentum of “hot” carriers (electrons or holes, depending on the conductivity of the silicon) with respect to the Schottky barrier of the device. The applied potential functions to align with the direction of momentum of the “hot” carriers in the preferred direction “normal” to the silicon-silicide interface, allowing for an increased number to move over the Schottky barrier and add to the generated photocurrent.
    • 平面的基于波导的硅肖特基势垒光电检测器包括场板形式的第三端子,以提高检测器的响应度。 优选地,在其中形成其它硅化物接触区域的处理步骤期间形成用于检测区域的硅化物。 场板优选地形成为第一或第二CMOS金属化层的一部分,并且通过施加的电压来控制,以修改检测器硅化物层附近的电场。 通过修改电场,器件的响应度被“调谐”,以相对于器件的肖特基势垒调节“热”载流子(电子或空穴,取决于硅的导电性)的动量。 所施加的电位功能与“硅”载体的优势方向“正常”硅硅化物界面的动量方向相一致,允许增加的数量移动到肖特基势垒上并增加产生的光电流。
    • 29. 发明授权
    • SOI-based tunable laser
    • 基于SOI的可调谐激光器
    • US07701985B2
    • 2010-04-20
    • US12291246
    • 2008-11-06
    • Mark WebsterDavid PiedePrakash Gothoskar
    • Mark WebsterDavid PiedePrakash Gothoskar
    • H01S3/10H01S3/13
    • H01S5/141H01S5/021H01S5/02248H01S5/02268H01S5/06256
    • A silicon-on-insulator (SOI)-based tunable laser is formed to include the gain medium (such as a semiconductor optical amplifier) disposed within a cavity formed within the SOI substrate. A tunable wavelength reflecting element and associated phase matching element are formed on the surface of the SOI structure, with optical waveguides formed in the surface SOI layer providing the communication between these components. The tunable wavelength element is controlled to adjust the optical wavelength. Separate discrete lensing elements may be disposed in the cavity with the gain medium, providing efficient coupling of the optical signal into the SOI waveguides. Alternatively, the gain medium itself may be formed to include spot converting tapers on its endfaces, the tapers used to provide mode matching into the associated optical waveguides.
    • 形成绝缘体上硅(SOI)的可调谐激光器以包括设置在形成于SOI衬底内的空腔内的增益介质(例如半导体光放大器)。 在SOI结构的表面上形成可调波长反射元件和相关的相位匹配元件,其中形成在表面SOI层中的光波导提供这些部件之间的连通。 可调波长元件被控制以调节光学波长。 单独的离散透镜元件可以用增益介质设置在空腔中,从而提供光信号到SOI波导的有效耦合。 或者,增益介质本身可以被形成为包括其端面上的点变换锥度,用于向相关联的光波导提供模式匹配的锥度。