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21. 发明授权

US08734538B2 Preparation process of electrode for battery 有权
标题翻译：电池电极的制备工艺
公开(公告)号：US08734538B2
公开(公告)日：2014-05-27
申请号：US13572297
申请日：2012-08-10
申请人： Kenta Hiramatsu , Masakazu Sanada
发明人： Kenta Hiramatsu , Masakazu Sanada
IPC分类号： H01M4/82 , H01M6/00
CPC分类号： H01M4/139 , H01M4/0404 , Y10T29/49108 , Y10T29/49115 , Y10T29/49204
摘要： Preparation process of electrode for battery, comprising first application step for forming first linear part by relatively moving first nozzle which discharges first active material linearly with respect to current collector to form a plural of first linear parts on current collector, first drying step for drying first linear parts, second application step for forming second linear part between first linear parts by relatively moving second nozzle which discharges second active material with respect to current collector, and second drying step for drying first linear part and second linear part, wherein height H1 of first linear part and height H2 of second linear part satisfies the relational inequality (1): H1
摘要翻译：电池用电极的制造方法，包括：第一施加步骤，通过相对移动的第一喷嘴形成第一线性部，所述第一喷嘴相对于集电体线性排放第一活性物质，以在集电体上形成多个第一直线部，第一干燥步骤，直线部分，用于通过相对于集流体排出第二活性材料的相对移动的第二喷嘴形成第一直线部分之间的第二直线部分的第二施加步骤，以及用于干燥第一直线部分和第二直线部分的第二干燥步骤，其中第一直线部分的高度H1 第二线性部分的线性部分和高度H2满足关系不等式（1）：H1

22. 发明授权

US08696825B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08696825B2
公开(公告)日：2014-04-15
申请号：US13336729
申请日：2011-12-23
申请人： Katsuhiko Miya , Akira Izumi
发明人： Katsuhiko Miya , Akira Izumi
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67028 , Y10S134/902
摘要： A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.
摘要翻译：从形成在阻挡部件上的冲洗液体排出口排出冲洗液（DIW），在向间隙空间供给氮气的同时，向基板表面进行漂洗处理，并将液体混合物（IPA + DIW）从形成在所述阻挡构件中的液体混合物排出口，以在将所述氮气供应到所述间隙空间中时，用所述液体混合物代替粘附到所述基板表面的冲洗液。因此，当用液体混合物代替粘附到基板表面的冲洗液体时，可以抑制液体混合物的溶解氧浓度的增加，这使得可以可靠地防止在基板表面上形成氧化膜或产生水印。

23. 发明授权

US08686320B2 Heat treatment apparatus emitting flash of light 有权
标题翻译：热处理设备发出闪光
公开(公告)号：US08686320B2
公开(公告)日：2014-04-01
申请号：US13298892
申请日：2011-11-17
申请人： Kenichi Yokouchi
发明人： Kenichi Yokouchi
IPC分类号： H01L21/26 , F27B5/14 , F27B5/18 , F27D11/02
CPC分类号： H01L21/324 , F27B17/0025 , F27D5/0037 , H01L21/02425 , H01L21/67103 , H01L21/67115 , H01L21/68785 , H01L21/68792
摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.
摘要翻译：连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯具有高峰值强度的闪光的叠加可以增加即使是衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。这实现了深结的激活，而不会引起基板翘曲或开裂。

24. 发明申请

US20140065295A1 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20140065295A1
公开(公告)日：2014-03-06
申请号：US14011285
申请日：2013-08-27
申请人： DAINIPPON SCREEN MFG. CO., LTD
发明人： Tetsuya EMOTO , Manabu OKUTANI
IPC分类号： B05D1/00 , B05C9/12
CPC分类号： B05D1/005 , B05C9/12 , B05D3/02 , B05D3/0254 , B05D3/0493 , B05D5/08 , H01L21/67051 , H01L21/67057 , H01L21/6708 , H01L21/67086 , H01L21/6715
摘要： A substrate treatment method is provided, which includes: a liquid film forming step of forming a liquid film of a treatment liquid on a front surface of a substrate; a hydrophobization liquid supplying step of supplying a hydrophobization liquid to a center portion of the front surface of the substrate for hydrophobizing the front surface of the substrate, while rotating the substrate; an inactivation suppressing step of suppressing inactivation of the supplied hydrophobization liquid on a peripheral edge portion of the front surface of the substrate simultaneously with the hydrophobization liquid supplying step; and a drying step of drying the substrate to which the hydrophobization liquid has been supplied.
摘要翻译：提供了一种基板处理方法，其包括：在基板的前表面上形成处理液的液膜的液膜形成步骤; 疏水化液体供给步骤，在旋转所述基板的同时，将疏水化液体供给到所述基板的前表面的中心部分，以使所述基板的前表面疏水化; 在疏水化液供给工序的同时，抑制供给的疏水化液在基材的表面的周缘部的失活的失活抑制工序; 以及干燥步骤，干燥已经提供疏水化液体的基材。

25. 发明申请

US20140051258A1 SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD FOR CARRYING OUT CHEMICAL TREATMENT FOR SUBSTRATE 有权
标题翻译：基板处理装置和基板处理方法，用于执行基板的化学处理
公开(公告)号：US20140051258A1
公开(公告)日：2014-02-20
申请号：US13953954
申请日：2013-07-30
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Kenji IZUMOTO , Nobuyuki SHIBAYAMA
IPC分类号： H01L21/306 , H01L21/67
CPC分类号： H01L21/30604 , H01L21/02087 , H01L21/0209 , H01L21/32134 , H01L21/67028 , H01L21/6708 , H01L21/67086
摘要： It is an object to carry out a chemical treatment for a peripheral edge part of a substrate while suppressing an amount of consumption of a processing liquid and a time required for processing. In order to achieve the object, a substrate processing device injects heating steam to a peripheral edge part of a substrate to heat the peripheral edge part when carrying out a chemical treatment for the peripheral edge part of the substrate while rotating the substrate in a substantially horizontal posture. Moreover, the substrate processing device injects a gas from above the substrate toward a predetermined injection target region defined within a range surrounded by a rotating track of the peripheral edge part of the substrate in an upper surface of the substrate, thereby generating, on the substrate, a gas flow which flows from the injection target region toward the peripheral edge part of the substrate.
摘要翻译：本发明的目的是在抑制处理液的消耗量和处理所需的时间的同时对基板的周缘部进行化学处理。为了实现该目的，基板处理装置在基板的基本水平旋转的同时对基板的周缘部进行化学处理，向基板的周缘部喷射加热蒸汽，对周缘部进行加热，姿势。此外，基板处理装置从基板上方朝向在基板的上表面中由基板的周缘部的旋转轨道包围的范围内限定的规定的注入对象区域注入气体，从而在基板从喷射对象区域朝向基板的周缘部流动的气流。

26. 发明申请

US20140050977A1 METHOD OF AND APPARATUS FOR MANUFACTURING ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY AND ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY 审中-公开
标题翻译：用于制造锂离子二次电池的电极的方法和装置和用于锂离子二次电池的电极
公开(公告)号：US20140050977A1
公开(公告)日：2014-02-20
申请号：US13887689
申请日：2013-05-06
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Masakazu SANADA , Takeshi MATSUDA , Akira IZUMI
IPC分类号： H01M4/04 , H01M10/058
CPC分类号： H01M4/04 , H01M4/0404 , H01M4/134 , H01M4/139 , H01M4/1395 , H01M10/058 , Y10T29/49108 , Y10T29/53135
摘要： An electrode for lithium-ion secondary battery comprises: a base member which functions as a current collector; and an active material layer formed in a surface of the base member as a stripe-like pattern including a plurality of active material lines which contain silicon or a silicon compound as an active material, which are spaced apart from each other and which protrude beyond the surface of the base member.
摘要翻译：锂离子二次电池用电极包括：作为集电体的基材; 以及活性物质层，其形成在所述基材的表面中，作为条状图案，所述条状图案包括多个活性物质线，所述多个活性物质线含有作为活性物质的硅或硅化合物，所述硅或硅化合物彼此间隔开并突出超过基部构件的表面。

27. 发明授权

US08623146B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08623146B2
公开(公告)日：2014-01-07
申请号：US13353883
申请日：2012-01-19
申请人： Masahiko Kato , Naozumi Fujiwara , Katsuhiko Miya
发明人： Masahiko Kato , Naozumi Fujiwara , Katsuhiko Miya
IPC分类号： B08B7/04 , B08B5/00 , B08B3/10
CPC分类号： H01L21/67051 , H01L21/02052
摘要： A cooling gas discharge nozzle 7 is arranged above an initial position P(Rin) distant from a rotation center P(0) of a substrate W toward the outer edge of the substrate W and supplies a cooling gas to the initial position P(0) of the rotating substrate W to solidify DIW adhering to an initial region including the initial position P(Rin) and the rotation center P(0). Following formation of an initial solidified region FR0, a range to be solidified is spread toward the outer edge of the substrate W and all the DIW (liquid to be solidified) adhering to a substrate surface Wf is solidified to entirely freeze a liquid film LF.
摘要翻译：冷却气体排出喷嘴7配置在从基板W的旋转中心P（0）远离基板W的外缘的初始位置P（Rin）的上方，并将冷却气体供给到初始位置P（0）旋转基板W固化附着在包括初始位置P（Rin）和旋转中心P（0）的初始区域的DIW。在形成初始凝固区域FR0之后，将固化的范围向基板W的外缘扩散，并且附着在基板表面Wf上的所有DIW（要固化的液体）被固化，以使液膜LF完全冷冻。

28. 发明申请

US20130306238A1 CHEMICAL LIQUID PREPARATION METHOD OF PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, CHEMICAL LIQUID PREPARATION UNIT PREPARING A CHEMICAL LIQUID FOR SUBSTRATE PROCESSING, AND SUBSTRATE PROCESSING SYSTEM 审中-公开
标题翻译：化学液体制备方法，用于制备用于基板处理的化学液体，化学液体制备单元，用于制备用于基板处理的化学液体和基板处理系统
公开(公告)号：US20130306238A1
公开(公告)日：2013-11-21
申请号：US13835073
申请日：2013-03-15
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Atsuyasu MIURA , Hidekazu ISHIKAWA
IPC分类号： B01F1/00 , C09K13/00
CPC分类号： H01L21/6708 , B01F1/0038 , B01F3/04503 , B01F3/04737 , B01F3/04744 , B01F5/0614 , B01F5/10 , B01F5/102 , B01F2003/04879 , B01F2003/04921 , C09K13/00 , H01L21/30617 , H01L21/67017 , H01L21/67051 , H01L21/67253
摘要： A substrate processing system includes a chemical liquid preparation unit preparing a chemical liquid to be supplied to a substrate and a processing unit which supplies the chemical liquid, prepared by the chemical liquid preparation unit, to the substrate. The chemical liquid preparation unit supplies an oxygen-containing gas, containing oxygen gas, to a TMAH-containing chemical liquid, containing TMAH (tetramethylammoniumhydroxide),tomaketheoxygen-containing gas dissolve in the TMAH-containing chemical liquid.
摘要翻译：基板处理系统包括准备供给到基板的化学液体的化学液体制备单元和将由药液制备单元制备的药液供给到基板的处理单元。化学液体制备单元向含TMAH的化学液体提供含有氧气的含氧气体，该TMAH化学液体含有含TMAH（四甲基氢氧化铵），含甲基乙氧基的气体溶于含TMAH的化学液体中。

29. 发明授权

US08559799B2 Heat treatment apparatus and method for heating substrate by photo-irradiation 有权
标题翻译：热处理装置及通过光照射加热基板的方法
公开(公告)号：US08559799B2
公开(公告)日：2013-10-15
申请号：US12563409
申请日：2009-09-21
申请人： Hideo Nishihara , Shinichi Kato
发明人： Hideo Nishihara , Shinichi Kato
IPC分类号： F26B19/00
CPC分类号： H01L21/67115 , H01L21/26513 , H01L21/2686
摘要： Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering.
摘要翻译：进行两步光照射热处理，使得总的光照射时间不超过1秒，并且利用平均在a的光发射输出进行半导体晶片的光照射的第一步骤第一发光输出和半导体晶片的光照射的第二步骤根据在第二发光输出处峰值的输出波形进行，该输出波形高于第一步骤中的平均和最大发光输出。在第一步骤中以相对低的发光输出进行初步光照射，然后在第二步骤中用较高的峰进行强光照射使得半导体晶片的表面温度能够以更少量的能量进一步增加，在常规情况下，同时防止半导体晶片破碎。

30. 发明申请

US20130258398A1 PRINTING CONTROL APPARATUS, RECORDING MEDIUM HAVING RECORDED THEREON PRINTING CONTROL PROGRAM, AND PRINTING CONTROL METHOD 有权
标题翻译：打印控制装置，具有记录的打印控制程序的记录介质和打印控制方法
公开(公告)号：US20130258398A1
公开(公告)日：2013-10-03
申请号：US13781938
申请日：2013-03-01
申请人： DAINIPPON SCREEN MFG. CO., LTD.
发明人： Koji MATSUO , Hiroyuki SEGAWA , Soichi KIMURA
IPC分类号： G06K15/02
CPC分类号： G06K15/1801 , G06F3/1212 , G06F3/1243 , G06F3/1256 , G06F3/1285
摘要： A preflight check unit in a printing control apparatus includes a sub-preflight check unit, an object page determination unit, a main preflight check unit, and a preflight result output unit. The sub-preflight check unit obtains resource use information and part use information. The object page determination unit determines object pages to be subjected to the preflight check, based on the resource use information and the part use information, and writes object page information indicating the object pages in a storage unit. The main preflight check unit reads the object page information from the storage unit to perform preflight check on the object pages indicated by the object page information. The preflight result output unit outputs a preflight result.
摘要翻译：打印控制装置中的预检单元包括副预检单元，对象页确定单元，主预检单元以及预检结果输出单元。子预检单元获取资源使用信息和部分使用信息。对象页面确定单元基于资源使用信息和部分使用信息来确定要进行预检检查的对象页面，并将指示对象页面的对象页面信息写入存储单元。主要预检单元从存储单元读取对象页面信息，以对象页面信息指示的对象页面执行预检检查。预检结果输出单元输出预检结果。

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