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    • 3. 发明申请
    • SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
    • 基板处理方法和基板处理装置
    • US20140127908A1
    • 2014-05-08
    • US14075623
    • 2013-11-08
    • DAINIPPON SCREEN MFG. CO., LTD
    • Manabu OKUTANI
    • H01L21/02
    • H01L21/0206B08B3/04H01L21/02068H01L21/67051H01L21/6708H01L21/67109H01L21/67115H01L21/68792
    • The inventive substrate treatment method includes: an organic solvent supplying step of supplying an organic solvent having a smaller surface tension than a rinse liquid to the upper surface of a substrate so that rinse liquid adhering to the upper surface of the substrate is replaced with the organic solvent; a higher temperature maintaining step of maintaining the upper surface of the substrate at a predetermined temperature higher than the boiling point of the organic solvent to thereby form a gas film of the organic solvent on the entire upper surface of the substrate including the gap of the minute pattern and to form a liquid film of the organic solvent on the gas film, the higher temperature maintaining step being performed after the organic solvent supplying step is started; and an organic solvent removing step of removing the organic solvent liquid film from the upper surface of the substrate.
    • 本发明的基板处理方法包括:有机溶剂供给步骤,将具有比冲洗液更小的表面张力的有机溶剂供给到基板的上表面,使得附着到基板的上表面的冲洗液体被有机物 溶剂; 将基板的上表面保持在高于有机溶剂的沸点的规定温度的高温保持步骤,从而在基板的整个上表面上形成有机溶剂的气膜,该气体膜包括分钟的间隙 在气膜上形成有机溶剂的液膜,在开始有机溶剂供给工序后进行高温保持工序; 以及从基板的上表面除去有机溶剂液膜的有机溶剂除去工序。