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    • 21. 发明授权
    • Liquid crystal display and fabrication method thereof
    • 液晶显示及其制造方法
    • US07867796B2
    • 2011-01-11
    • US11968065
    • 2007-12-31
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • H01L21/00H01L21/84H01L21/44
    • H01L27/1288H01L27/1285H01L27/1292H01L29/66765
    • A method for fabricating an LCD includes: providing a substrate with a thin film transistor (ITT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode.
    • 一种用于制造LCD的方法包括:为衬底提供限定在其上的薄膜晶体管(ITT)部分; 在基板上形成用于栅电极的金属膜; 通过第一印刷工艺蚀刻金属膜以形成栅电极; 在基板上依次形成栅极绝缘层,半导体层和源极和漏极的金属膜; 通过第二印刷工艺选择性地蚀刻用于源极和漏极,半导体层和栅极绝缘层的金属膜,以形成顺序堆叠的栅极绝缘层图案,预活性图案和金属膜图案,使得栅极绝缘 层图案从预活性图案的侧面过蚀刻; 在金属膜图案的基板上形成绝缘层; 蚀刻绝缘层以暴露金属膜图案; 在金属膜图案上形成透明导电膜和剩余的绝缘膜; 并且选择性地蚀刻透明导电膜,金属膜图案,预活性图案以形成有源图案,源电极,漏电极和与漏极连接的像素电极。
    • 23. 发明授权
    • Array substrate for liquid crystal display device and method of manufacturing the same
    • 液晶显示装置用阵列基板及其制造方法
    • US07489369B2
    • 2009-02-10
    • US11325570
    • 2006-01-05
    • Youn-Gyoung ChangHeung-Lyul ChoSoon-Sung Yoo
    • Youn-Gyoung ChangHeung-Lyul ChoSoon-Sung Yoo
    • G02F1/136G02F1/1343
    • G02F1/136227G02F1/134336G02F1/13458G02F1/1362G02F2001/136231G02F2001/136236
    • A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad and a gate electrode on a substrate through a first mask process, forming a data line, a data pad, a source electrode, a drain electrode and an active layer on the substrate including the gate line, the gate pad and the gate electrode through a second mask process, wherein the data line crosses the gate line to define a pixel region, the source electrode is extended from the data line, the drain electrode is spaced apart from the source electrode, and the active layer is disposed between the gate electrode and the source and drain electrodes, forming a passivation layer on an entire surface of the substrate including the data line, the source electrode and the drain electrode through a third mask process, the passivation layer being etched to expose the substrate in the pixel region, a part of the drain electrode, the gate pad and the data pad, and forming a pixel electrode, a gate pad terminal and a data pad terminal by depositing a transparent conductive material on an entire surface of the substrate including the passivation layer, the pixel electrode directly contacting the exposed part of the drain electrode, the gate pad terminal directly contacting the gate pad, and the data pad terminal directly contacting the data pad.
    • 制造液晶显示装置用阵列基板的方法包括通过第一掩模工艺在基板上形成栅极线,栅极焊盘和栅电极,形成数据线,数据焊盘,源电极,漏极 电极和通过第二掩模处理的包括栅极线,栅极焊盘和栅电极的衬底上的有源层,其中数据线与栅极线交叉以限定像素区域,源电极从数据线延伸, 所述漏电极与所述源电极间隔开,并且所述有源层设置在所述栅电极与所述源漏电极之间,在所述基板的整个表面上形成钝化层,所述整个表面包括所述数据线,所述源电极和所述漏极 电极通过第三掩模工艺,钝化层被蚀刻以暴露像素区域中的衬底,漏电极的一部分,栅极焊盘和数据焊盘,并且形成像素e 栅极焊盘端子和数据焊盘端子,通过在包括钝化层的基板的整个表面上沉积透明导电材料,直接接触漏电极的暴露部分的像素电极,直接接触栅极的栅极焊盘端子 焊盘和数据焊盘端子直接接触数据焊盘。
    • 24. 发明授权
    • Array substrate for liquid crystal display device and the fabrication method of the same
    • 液晶显示装置用阵列基板及其制造方法
    • US07381988B2
    • 2008-06-03
    • US11806979
    • 2007-06-05
    • Byung-chul AhnByoung-ho LimSoon-Sung YooYong-wan Kim
    • Byung-chul AhnByoung-ho LimSoon-Sung YooYong-wan Kim
    • H01L29/04H01L29/10H01L31/20H01L31/036H01L31/0376
    • H01L27/1288H01L27/124H01L27/1255
    • The present invention discloses a four-mask method of manufacturing an array substrate of a liquid crystal display device and the liquid crystal display device having the same array substrate. The method includes forming a plurality of gate lines, gate electrodes and gate extension lines by depositing a first metallic material on a substrate and patterning the first metallic material with a first mask, the gate extension lines extending toward the opposite direction of the gate electrodes; forming a first insulating layer on the whole surface having gate lines, gate electrodes, and gate extension lines; forming a plurality of data lines, source electrodes, drain electrodes, and capacitor electrodes over the gate lines by depositing a semiconductor layer, an ohmic contact layer and a second metallic material sequentially on the first insulating layer, and patterning the second metallic material and the ohmic contact layer with a second mask; forming a passivation layer and a plurality of first and second contact holes by depositing a second insulating layer on the data lines, the source electrodes, the drain electrodes and the capacitor electrodes, and patterning the second insulating layer with a third mask, the first contact holes exposing a portion of the drain electrode, the second contact holes exposing a portion of the capacitor electrodes; and forming a plurality of pixel electrodes by depositing a transparent conductive layer on the passivation layer, and patterning the transparent conductive layer by a fourth mask, the pixel electrodes contacting the drain electrodes through the first contact holes and contacting the capacitor electrodes through the second contact holes.
    • 本发明公开了一种制造液晶显示装置的阵列基板的四掩模方法和具有相同阵列基板的液晶显示装置。 该方法包括通过在衬底上沉积第一金属材料并用第一掩模图案化第一金属材料来形成多条栅极线,栅电极和栅极延伸线,栅极延伸线朝向栅电极的相反方向延伸; 在具有栅极线,栅极电极和栅极延伸线的整个表面上形成第一绝缘层; 通过在第一绝缘层上依次沉积半导体层,欧姆接触层和第二金属材料,在栅极线上形成多个数据线,源电极,漏电极和电容器电极,并将第二金属材料和 具有第二掩模的欧姆接触层; 通过在数据线,源电极,漏电极和电容器电极上沉积第二绝缘层,并用第三掩模对第二绝缘层进行构图来形成钝化层和多个第一和第二接触孔,第一接触 露出一部分漏电极的第二接触孔暴露电容器电极的一部分; 以及通过在所述钝化层上沉积透明导电层并形成多个像素电极,以及通过第四掩模对所述透明导电层进行图案化,所述像素电极通过所述第一接触孔与所述漏电极接触并通过所述第二接触接触所述电容器电极 孔。
    • 26. 发明授权
    • Manufacturing method of liquid crystal display device
    • 液晶显示装置的制造方法
    • US07256076B2
    • 2007-08-14
    • US10814186
    • 2004-04-01
    • Heung-Lyul ChoSoon-Sung YooYoun-Gyoung Chang
    • Heung-Lyul ChoSoon-Sung YooYoun-Gyoung Chang
    • H01L21/00
    • H01L27/1288G02F1/1368G02F2001/136231H01L27/1214
    • A manufacturing method of a thin film transistor of a liquid crystal display device using 3-mask includes forming a gate electrode over a substrate, consecutively forming a gate insulating layer and an active layer, forming a first photoresist pattern, removing an active layer formed at a source/drain region, ashing the first photoresist pattern to expose a part of an active region, forming a source/drain electrode, forming a passivation layer, forming a second photoresist pattern that exposes a pixel region over the passivation layer; forming a pixel region by using the second photoresist pattern as a mask, side-etching a part of the passivation layer to expose a part of the drain electrode, forming a pixel electrode material over the second photoresist pattern and the pixel region, and simultaneously removing the second photoresist pattern and the pixel electrode material formed thereon to form a pixel electrode.
    • 使用3掩模的液晶显示装置的薄膜晶体管的制造方法包括在基板上形成栅电极,连续地形成栅极绝缘层和有源层,形成第一光致抗蚀剂图案,除去形成在第 源极/漏极区域,灰化第一光致抗蚀剂图案以暴露有源区的一部分,形成源极/漏极,形成钝化层,形成在钝化层上暴露像素区域的第二光致抗蚀剂图案; 通过使用第二光致抗蚀剂图案作为掩模形成像素区域,侧蚀刻钝化层的一部分以暴露部分漏电极,在第二光致抗蚀剂图案和像素区域上形成像素电极材料,并同时去除 第二光致抗蚀剂图案和形成在其上的像素电极材料以形成像素电极。
    • 30. 发明授权
    • Method of preventing a data pad of an array substrate from overetching
    • 防止阵列基板的数据焊盘过度蚀刻的方法
    • US06746887B1
    • 2004-06-08
    • US09784088
    • 2001-02-16
    • Kyo-Ho MoonSoon-Sung Yoo
    • Kyo-Ho MoonSoon-Sung Yoo
    • H01L2100
    • G02F1/1368G02F2001/136236
    • A method of fabricating an array substrate for use in an LCD device which can be used in a four-, five- or six-mask process includes simultaneously etching layers formed over gate and data pads. When performing a photolithography process, photoresist remains over the data pad and acts as an etch stopper. And thus, while etching the layers over the gate pad, the layers over the data pad are etched without any damage to the data pad and without overetching the data pad. Therefore, defects caused by the resistance between the data pad and the data pad electrode do not occur, and pixel defects in the LCD device are prevented. Moreover, the manufacturing yield increases when this method is used.
    • 制造可用于四,五或六掩模工艺的LCD装置中使用的阵列基板的方法包括同时蚀刻形成在栅极和数据焊盘上的层。 当进行光刻工艺时,光致抗蚀剂保留在数据焊盘上,并用作蚀刻停止层。 因此,当在栅极焊盘上蚀刻层时,在数据焊盘上的层被蚀刻而不会对数据焊盘造成任何损坏,而不会过蚀刻数据焊盘。 因此,不会发生由数据焊盘和数据焊盘电极之间的电阻引起的缺陷,并且防止了LCD器件中的像素缺陷。 此外,当使用该方法时,制造产量增加。