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    • 2. 发明授权
    • Liquid crystal display device
    • 液晶显示装置
    • US07884913B2
    • 2011-02-08
    • US12333033
    • 2008-12-11
    • Yun-Ho KookSoon-Sung YooYoun-Gyoung ChangSeung-Hee NamNam-Kook Kim
    • Yun-Ho KookSoon-Sung YooYoun-Gyoung ChangSeung-Hee NamNam-Kook Kim
    • G02F1/1345
    • G02F1/13458
    • A LCD device and its fabrication method as discussed. According to an embodiment, the LCD device includes a plurality of gate lines and data lines arranged on a substrate to define a plurality of unit pixels; thin film transistors (TFTs) each formed at an intersecting region of the gate lines and the data lines; a plurality of gate pad portions and data pad portions formed at end portions of the gate lines and the data lines, respectively, at least one of the gate and data pad portions being made up of at least two pad unit portions, each pad unit portion having at least one contact hole such that the contact holes of one of the plurality of gate or data pad portions are arranged in a zigzag or an oblique line format; and pixel electrodes formed at the unit pixels.
    • 一种LCD装置及其制造方法。 根据实施例,LCD装置包括布置在基板上以限定多个单位像素的多个栅极线和数据线; 薄膜晶体管(TFT)各自形成在栅极线和数据线的交叉区域; 分别形成在栅极线和数据线的端部的多个栅极焊盘部分和数据焊盘部分,至少一个栅极和数据焊盘部分由至少两个焊盘单元部分构成,每个焊盘单元部分 具有至少一个接触孔,使得所述多个栅极或数据焊盘部分中的一个的接触孔以锯齿形或斜线形式布置; 以及形成在单位像素处的像素电极。
    • 3. 发明申请
    • LIQUID CRYSTAL DISPLAY AND FABRICATION METHOD THEREOF
    • 液晶显示及其制造方法
    • US20080224141A1
    • 2008-09-18
    • US11968065
    • 2007-12-31
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • H01L33/00H01L21/00
    • H01L27/1288H01L27/1285H01L27/1292H01L29/66765
    • A method for fabricating an LCD includes: providing a substrate with a thin film transistor (ITT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode.
    • 一种用于制造LCD的方法包括:为衬底提供限定在其上的薄膜晶体管(ITT)部分; 在基板上形成用于栅电极的金属膜; 通过第一印刷工艺蚀刻金属膜以形成栅电极; 在基板上依次形成栅极绝缘层,半导体层和源极和漏极的金属膜; 通过第二印刷工艺选择性地蚀刻用于源极和漏极,半导体层和栅极绝缘层的金属膜,以形成顺序堆叠的栅极绝缘层图案,预活性图案和金属膜图案,使得栅极绝缘 层图案从预活性图案的侧面过蚀刻; 在金属膜图案的基板上形成绝缘层; 蚀刻绝缘层以暴露金属膜图案; 在金属膜图案上形成透明导电膜和剩余的绝缘膜; 并且选择性地蚀刻透明导电膜,金属膜图案,预活性图案以形成有源图案,源电极,漏电极和与漏极连接的像素电极。
    • 5. 发明申请
    • LIQUID CRYSTAL DISPLAY AND FABRICATION METHOD THEREOF
    • 液晶显示及其制造方法
    • US20110079853A1
    • 2011-04-07
    • US12963403
    • 2010-12-08
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • H01L29/786H01L21/336
    • H01L27/1288H01L27/1285H01L27/1292H01L29/66765
    • A method for fabricating an LCD includes: providing a substrate with a thin film transistor (TFT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode.
    • 一种用于制造LCD的方法包括:为衬底提供限定在其上的薄膜晶体管(TFT)部分; 在基板上形成用于栅电极的金属膜; 通过第一印刷工艺蚀刻金属膜以形成栅电极; 在基板上依次形成栅极绝缘层,半导体层和源极和漏极的金属膜; 通过第二印刷工艺选择性地蚀刻用于源极和漏极,半导体层和栅极绝缘层的金属膜,以形成顺序堆叠的栅极绝缘层图案,预活性图案和金属膜图案,使得栅极绝缘 层图案从预活性图案的侧面过蚀刻; 在金属膜图案的基板上形成绝缘层; 蚀刻绝缘层以暴露金属膜图案; 在金属膜图案上形成透明导电膜和剩余的绝缘膜; 并且选择性地蚀刻透明导电膜,金属膜图案,预活性图案以形成有源图案,源电极,漏电极和与漏极连接的像素电极。
    • 6. 发明授权
    • Liquid crystal display and fabrication method thereof
    • 液晶显示及其制造方法
    • US08187927B2
    • 2012-05-29
    • US12963403
    • 2010-12-08
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • H01L21/00H01L21/84H01L21/44
    • H01L27/1288H01L27/1285H01L27/1292H01L29/66765
    • A method for fabricating an LCD includes: providing a substrate with a thin film transistor (TFT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode.
    • 一种用于制造LCD的方法包括:为衬底提供限定在其上的薄膜晶体管(TFT)部分; 在基板上形成用于栅电极的金属膜; 通过第一印刷工艺蚀刻金属膜以形成栅电极; 在基板上依次形成栅极绝缘层,半导体层和源极和漏极的金属膜; 通过第二印刷工艺选择性地蚀刻用于源极和漏极,半导体层和栅极绝缘层的金属膜,以形成顺序堆叠的栅极绝缘层图案,预活性图案和金属膜图案,使得栅极绝缘 层图案从预活性图案的侧面过蚀刻; 在金属膜图案的基板上形成绝缘层; 蚀刻绝缘层以暴露金属膜图案; 在金属膜图案上形成透明导电膜和剩余的绝缘膜; 并且选择性地蚀刻透明导电膜,金属膜图案,预活性图案以形成有源图案,源电极,漏电极和与漏极连接的像素电极。
    • 7. 发明授权
    • Liquid crystal display and fabrication method thereof
    • 液晶显示及其制造方法
    • US07867796B2
    • 2011-01-11
    • US11968065
    • 2007-12-31
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • Seung-Hee NamNam-Kook KimSoon-Sung YooYoun-Gyoung Chang
    • H01L21/00H01L21/84H01L21/44
    • H01L27/1288H01L27/1285H01L27/1292H01L29/66765
    • A method for fabricating an LCD includes: providing a substrate with a thin film transistor (ITT) part defined thereon; forming a metallic film for a gate electrode on the substrate; etching the metallic film through a first printing process to form a gate electrode; sequentially forming a gate insulating layer, a semiconductor layer, and a metallic film for source and drain electrodes on the substrate; selectively etching the metallic film for source and drain electrodes, the semiconductor layer and the gate insulating layer through a second printing process to form a gate insulating layer pattern, a preliminary active pattern and a metallic film pattern which are sequentially stacked such that the gate insulating layer pattern is over-etched from the side of the preliminary active pattern; forming an insulating layer on the substrate with the metallic film pattern; etching the insulating layer to expose the metallic film pattern; forming a transparent conductive film on the metallic film pattern and a remaining insulating film; and selectively etching the transparent conductive film, the metallic film pattern, the preliminary active pattern to form an active pattern, a source electrode, a drain electrode, and a pixel electrode connected with the drain electrode.
    • 一种用于制造LCD的方法包括:为衬底提供限定在其上的薄膜晶体管(ITT)部分; 在基板上形成用于栅电极的金属膜; 通过第一印刷工艺蚀刻金属膜以形成栅电极; 在基板上依次形成栅极绝缘层,半导体层和源极和漏极的金属膜; 通过第二印刷工艺选择性地蚀刻用于源极和漏极,半导体层和栅极绝缘层的金属膜,以形成顺序堆叠的栅极绝缘层图案,预活性图案和金属膜图案,使得栅极绝缘 层图案从预活性图案的侧面过蚀刻; 在金属膜图案的基板上形成绝缘层; 蚀刻绝缘层以暴露金属膜图案; 在金属膜图案上形成透明导电膜和剩余的绝缘膜; 并且选择性地蚀刻透明导电膜,金属膜图案,预活性图案以形成有源图案,源电极,漏电极和与漏极连接的像素电极。