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21. 发明授权

US08585831B2 Substrate cleaning method 失效
标题翻译：基材清洗方法
公开(公告)号：US08585831B2
公开(公告)日：2013-11-19
申请号：US13255723
申请日：2010-03-10
申请人： Hidefumi Matsui , Tsuyoshi Moriya , Eiichi Nishimura , Shinichi Kawaguchi , Jun Yamawaku , Kunio Miyauchi
发明人： Hidefumi Matsui , Tsuyoshi Moriya , Eiichi Nishimura , Shinichi Kawaguchi , Jun Yamawaku , Kunio Miyauchi
IPC分类号： B08B3/00
CPC分类号： H01L21/02101 , H01L21/02071 , H01L21/67051 , H01L21/67109
摘要： There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate.
摘要翻译：提供一种基板清洗方法，其能够以简单的构造在短时间内清洁其上形成微细图案的基板，而不会对微细图案产生有害影响。在该方法中，将基板从用于在基板表面上进行处理的处理室转移到用于清洁基板的清洁室。将基板冷却至清洁室内的温度。将超流体供给到基板的表面，并且当超流体从基板的表面流过时，精细图案中的污染物成分与超流体一起流出。

22. 发明授权

US08034720B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08034720B2
公开(公告)日：2011-10-11
申请号：US12014540
申请日：2008-01-15
申请人： Eiichi Nishimura , Chie Kato , Jun Yamawaku
发明人： Eiichi Nishimura , Chie Kato , Jun Yamawaku
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60° C. Then, hydrogen fluoride gas is supplied toward the substrate.
摘要翻译：可以去除氮化硅膜而不损坏热氧化膜的基板处理方法。将在热氧化膜上形成有至少具有热氧化膜和氮化硅膜的基板加热至不低于60℃的温度。然后向基板供给氟化氢气体。

23. 发明申请

US20080301972A1 EVACUATION METHOD AND STORAGE MEDIUM 有权
标题翻译：排放方法和储存介质
公开(公告)号：US20080301972A1
公开(公告)日：2008-12-11
申请号：US12134604
申请日：2008-06-06
申请人： Jun Yamawaku , Tsuyoshi Moriya , Hideaki Yakushiji , Kazumasa Abe
发明人： Jun Yamawaku , Tsuyoshi Moriya , Hideaki Yakushiji , Kazumasa Abe
IPC分类号： F26B5/04
CPC分类号： H01J37/3244 , H01J37/32449
摘要： An evacuation method which can reduce evacuation time without causing moisture-related problems. In a vacuum processing apparatus including a vacuum processing chamber, during the evacuation for the vacuum processing chamber, the pressure in the vacuum processing chamber is maintained at a pressure lower than or equal to the atmospheric pressure but higher than or equal to 6.7×102 Pa (5 Torr).
摘要翻译：可以减少疏散时间而不引起与潮湿有关的问题的疏散方法。在包括真空处理室的真空处理设备中，在真空处理室抽真空期间，真空处理室中的压力保持在低于或等于大气压力但高于或等于6.7×102Pa（ 5托）。

24. 发明授权

US08523428B2 Component in processing chamber of substrate processing apparatus and method of measuring temperature of the component 有权
标题翻译：基板处理装置的处理室中的部件和部件的温度测量方法
公开(公告)号：US08523428B2
公开(公告)日：2013-09-03
申请号：US13432617
申请日：2012-03-28
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
IPC分类号： G01K13/00
CPC分类号： G01K11/14 , G01K5/48 , H01L21/67248
摘要： A component in a processing chamber of a substrate processing apparatus, where a temperature may be accurately measured by using a temperature measuring apparatus using an interference of a low-coherence light, even when a front surface and a rear surface are not parallel due to abrasion, or the like. A focus ring used in a vacuum atmosphere and of which a temperature is measured includes an abrasive surface exposed to an abrasive atmosphere according to plasma, a nonabrasive surface not exposed to the abrasive atmosphere, a thin-walled portion including a top surface and a bottom surface that are parallel to each other, and a coating member coating the top surface of the thin-walled portion, wherein a mirror-like finishing is performed on each of the top and bottom surfaces of the thin-walled portion.
摘要翻译：在基板处理装置的处理室中的部件，其中即使当前表面和后表面由于磨损而不平行时，也可以通过使用具有低相干光干涉的温度测量装置来精确地测量温度，等等。在真空气氛中使用并且测量温度的聚焦环包括暴露于等离子体的研磨气氛的研磨表面，未暴露于研磨性气氛的非磨损表面，包括顶表面和底部的薄壁部分表面彼此平行;以及涂覆部件，其涂覆在薄壁部分的顶表面上，其中在薄壁部分的每个顶表面和底表面上执行镜像整理。

25. 发明申请

US20120176692A1 FOCUS RING AND SUBSTRATE PROCESSING APPARATUS HAVING SAME 审中-公开
标题翻译：聚焦环和基材加工设备
公开(公告)号：US20120176692A1
公开(公告)日：2012-07-12
申请号：US13344926
申请日：2012-01-06
申请人： Jun Yamawaku , Chishio Koshimizu
发明人： Jun Yamawaku , Chishio Koshimizu
IPC分类号： G02B7/04 , H01L21/306
CPC分类号： H01J37/32642 , H01J37/32724
摘要： There is provided a focus ring that is capable of preventing deposits from adhering to a member having a lower temperature in a gap between two members having different temperatures. A focus ring 25 is disposed to surround a peripheral portion of a wafer W in a chamber 11 of a substrate processing apparatus 10. The focus ring 25 includes an inner focus ring 25a and an outer focus ring 25b. Here, the inner focus ring 25a is placed adjacent to the wafer W and configured to be cooled; and the outer focus ring 25b is placed so as to surround the inner focus ring 25a and configured not to be cooled. Further, a block member 25c is provided in a gap between the inner focus ring 25a and the outer focus ring 25b.
摘要翻译：提供了一种聚焦环，其能够防止沉积物粘附到具有不同温度的两个构件之间的间隙中具有较低温度的构件。焦点环25设置成围绕基板处理装置10的腔室11中的晶片W的周边部分。聚焦环25包括内聚焦环25a和外聚焦环25b。这里，内聚焦环25a被放置成与晶片W相邻并被配置为被冷却; 并且外聚焦环25b被放置成围绕内聚焦环25a并且被配置为不被冷却。此外，在内聚焦环25a和外聚焦环25b之间的间隙中设置有块部件25c。

26. 发明申请

US20100243620A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20100243620A1
公开(公告)日：2010-09-30
申请号：US12732583
申请日：2010-03-26
申请人： Jun Yamawaku , Chishio Koshimizu
发明人： Jun Yamawaku , Chishio Koshimizu
IPC分类号： B23K10/00
CPC分类号： H01J37/32642 , H01J37/32623 , H01J2237/2001
摘要： A plasma processing apparatus performs plasma processing on a processing target in a processing chamber. The apparatus includes: an object to be heated provided near a periphery of a mounting table disposed in the processing chamber; and a heating electrode disposed adjacent to the periphery of the mounting table, for heating the object to be heated. A first coil having a first path and a second coil having a second path are wired close to each other in the heating electrode along the periphery of the mounting table.
摘要翻译：等离子体处理装置对处理室中的处理对象进行等离子体处理。该装置包括：设置在处理室内的安装台的周边附近的被加热物; 以及与所述安装台的周边相邻设置的加热电极，用于加热待加热物体。具有第一路径的第一线圈和具有第二路径的第二线圈沿着安装台的周边在加热电极中彼此靠近布线。

27. 发明申请

US20100236406A1 SUBSTRATE PROCESSING APPARATUS AND EXHAUST METHOD THEREFOR 有权
标题翻译：基板加工设备及其排气方法
公开(公告)号：US20100236406A1
公开(公告)日：2010-09-23
申请号：US12726612
申请日：2010-03-18
申请人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： B03C3/01 , B03C3/38
CPC分类号： H01L21/67017
摘要： A substrate processing apparatus includes a processing chamber for accommodating therein a processing target substrate; a gas exhaust path through which a gas inside the processing chamber is exhausted; one or more exhaust pumps provided in the gas exhaust path; and a scrubber for collecting harmful components from an exhaust gas. The apparatus further includes an ionized gas supply unit for supplying to the gas exhaust path an ionized gas for neutralizing charged particles included in the exhaust gas flowing therethrough.
摘要翻译：基板处理装置包括：处理室，用于在其中容纳加工对象基板; 气体排出通道，处理室内的气体通过该排气路径排出; 设置在排气通道中的一个或多个排气泵; 以及用于从废气中收集有害成分的洗涤器。该装置还包括电离气体供应单元，用于向气体排出通道供应用于中和包含在流过其中的废气中的带电粒子的电离气体。

28. 发明申请

US20100018552A1 CLEANING DEVICE AND CLEANING METHOD OF SEMICONDUCTOR MANUFACTURING APPARATUS 有权
标题翻译：清洁装置和清洁方法的半导体制造装置
公开(公告)号：US20100018552A1
公开(公告)日：2010-01-28
申请号：US12510314
申请日：2009-07-28
申请人： Takayuki Kokubo , Jun Yamawaku , Tsuyoshi Moriya
发明人： Takayuki Kokubo , Jun Yamawaku , Tsuyoshi Moriya
IPC分类号： B08B3/10 , B08B13/00
CPC分类号： B08B3/10 , B08B13/00 , B08B2230/01
摘要： Provided are a cleaning device and a cleaning method of a semiconductor manufacturing apparatus, capable of performing a cleaning process more effectively as compared to conventional cases and obtaining a high cleaning effect. A semiconductor manufacturing apparatus cleaning device 100 includes a pure water steam generating vessel 2 for generating pure water steam from pure water; a supply port 5 for supplying the pure water steam to a cleaning target portion; a supply line 4 for connecting the pure water steam generating vessel with the supply port; a collection port 6 for collecting steam used in cleaning from the cleaning target portion; a collection vessel 8 for condensing and collecting the used steam; and a collection line 7 for connecting the collection port 6 with the collection vessel 8.
摘要翻译：提供了一种半导体制造装置的清洁装置和清洁方法，与常规情况相比，能够更有效地进行清洁处理并获得高清洁效果。半导体制造装置清洁装置100包括用于从纯水产生纯水蒸汽的纯水蒸汽发生容器2，用于将纯水蒸汽供应到清洁目标部分的供应口5; 用于将纯水蒸汽发生容器与供给口连接的供应管线4; 用于从清洁目标部分收集用于清洁的蒸汽的收集口6; 用于冷凝和收集用过的蒸汽的收集容器8; 以及用于将收集口6与收集容器8连接的收集线7。

29. 发明授权

US09385015B2 Transfer chamber and method for preventing adhesion of particle 有权
标题翻译：转移室和防止颗粒附着的方法
公开(公告)号：US09385015B2
公开(公告)日：2016-07-05
申请号：US12700771
申请日：2010-02-05
申请人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
发明人： Jun Yamawaku , Junji Oikawa , Hiroyuki Nakayama
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67184 , H01L21/67069 , H01L21/67196 , H01L21/67201 , H01L21/67213 , H01L21/67742 , H01L21/6831
摘要： A transfer chamber is provided between a processing unit for performing a predetermined process on a target substrate to be processed in a depressurized environment and an atmospheric maintaining unit for maintaining the target substrate in an atmospheric environment to transfer the target substrate therebetween. The transfer chamber includes a chamber main body for accommodating the target substrate, a gas exhaust unit for exhausting the chamber main body to set the chamber main body to the depressurized environment, and a gas supply unit for supplying a predetermined gas to the chamber main body to set the chamber main body in the atmospheric environment. Further, in the transfer chamber, an ionization unit is provided outside the chamber main body, for ionizing the predetermined gas and an ionized gas supply unit is provided to supply the ionized gas generated by the ionization unit to the chamber main body.
摘要翻译：传送室设置在用于在减压环境中对要处理的目标基板进行预定处理的处理单元和用于将目标基板保持在大气环境中以在其间传送目标基板的大气保持单元。传送室包括用于容纳目标基板的室主体，用于排出室主体以将室主体设置到减压环境的排气单元，以及用于将预定气体供应到室主体的气体供应单元将室主体设置在大气环境中。此外，在传送室中，离子化单元设置在室主体的外部，用于电离所述预定气体，并且提供电离气体供应单元以将由离子化单元产生的电离气体供应到室主体。

30. 发明授权

US09019505B2 Temperature control system including sub-chiller 有权
标题翻译：温控系统包括冷水机组
公开(公告)号：US09019505B2
公开(公告)日：2015-04-28
申请号：US13240274
申请日：2011-09-22
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
IPC分类号： G01B9/02 , H01L21/67 , G01J5/58 , G01J9/02
CPC分类号： H01L21/67248 , G01J9/02 , G01J2005/583
摘要： The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.
摘要翻译：温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

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