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    • 22. 发明授权
    • Method for forming electrical contacts through multi-level dielectric layers by high density plasma etching
    • 通过高密度等离子体蚀刻通过多层电介质层形成电触点的方法
    • US06693038B1
    • 2004-02-17
    • US09245563
    • 1999-02-05
    • Yun-Hung Shen
    • Yun-Hung Shen
    • H01L21311
    • H01L21/02063H01L21/31116H01L21/31144H01L21/76802H01L23/5226H01L2924/0002H01L2924/00
    • A method for forming within a dielectric layer upon a substrate within a microelectronics fabrication a series of contact via holes etched through the dielectric layer to multi-level contact layers employing reactive plasma etching methods to form the series of contact via holes. The first plasma etch method employs fluorine containing gases to form the etched via holes, and then the second plasma etch method employs oxygen and a fluorocarbon gas to complete the etching of the via holes and remove residual materials. The etched via holes access multi-level contact layers formed upon the substrate at differing heights with respect to the substrate, penetrating through at least one contact layer. This permits formation of a series of electrical contacts, between the series of contact layers and patterned conductor layers through the series of via holes, with low electrical resistances.
    • 一种用于在微电子学制造中的基板上的电介质层内形成一系列通过电介质层蚀刻到多层接触层的接触通孔的方法,所述多层接触层采用反应等离子体蚀刻方法形成一系列接触通孔。 第一等离子体蚀刻方法使用含氟气体形成蚀刻通孔,然后第二等离子体蚀刻方法使用氧气和碳氟化合物气体来完成通孔的蚀刻并除去残留的材料。 蚀刻后的通路通过穿透至少一个接触层的相对于衬底的不同高度形成在衬底上的多层接触层。 这允许在一系列接触层和通过一系列通孔的图案化导体层之间形成具有低电阻的一系列电接触。
    • 23. 发明授权
    • Method for cleaning metal precipitates in semiconductor processes
    • 在半导体工艺中清洗金属沉淀物的方法
    • US6103633A
    • 2000-08-15
    • US977190
    • 1997-11-24
    • Yun-Hung ShenSheng-Liang Pan
    • Yun-Hung ShenSheng-Liang Pan
    • H01L21/3205H01L21/3213H01L21/768H01L21/00
    • H01L21/76862H01L21/32051H01L21/3213H01L21/76841H01L21/76858
    • A new method of cleaning metal precipitates after the etching of metal lines using a two-step process is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A barrier metal layer is deposited overlying the insulating layer. A metal layer is deposited overlying the barrier metal layer wherein metal precipitates form at the interface between the barrier metal layer and the metal layer. The metal layer is covered with a layer of photoresist which is exposed to actinic light and developed and patterned to form the desired photoresist mask. The metal layer is etched away where it is not covered by the photoresist mask to form metal lines whereby the metal precipitates are exposed on the surface of the barrier metal layer. The barrier metal layer is anisotropically etched into using a high DC bias of greater than 240 volts and thereafter isotropically etched into underlying the metal precipitates whereby the metal precipitates are stripped away from the surface of the barrier metal layer completing the cleaning of the metal precipitates in the formation of metal lines in the fabrication of an integrated circuit.
    • 描述了在使用两步法蚀刻金属线之后清洗金属沉淀物的新方法。 半导体器件结构设置在半导体衬底中和半导体衬底上。 半导体器件结构被绝缘层覆盖。 覆盖在绝缘层上的阻挡金属层被沉积​​。 金属层沉积在阻挡金属层上,其中金属沉淀物在阻挡金属层和金属层之间的界面处形成。 金属层被一层光致抗蚀剂覆盖,该光致抗蚀剂暴露于光化光并显影和图案化以形成所需的光致抗蚀剂掩模。 金属层被蚀刻掉,其未被光致抗蚀剂掩模覆盖以形成金属线,由此金属沉淀物暴露在阻挡金属层的表面上。 阻挡金属层被各向异性地蚀刻成使用大于240伏特的高直流偏压,然后各向同性蚀刻到金属沉淀物的下面,从而将金属沉淀物从阻挡金属层的表面剥离,完成金属沉淀物的清洁 在制造集成电路中形成金属线。
    • 25. 发明授权
    • Passivation layer for a metal film to prevent metal corrosion
    • 钝化层为金属膜防止金属腐蚀
    • US5854134A
    • 1998-12-29
    • US851399
    • 1997-05-05
    • Chao-Yi LanShean-Ren HorngYun-Hung ShenHung-Jen Tsai
    • Chao-Yi LanShean-Ren HorngYun-Hung ShenHung-Jen Tsai
    • H01L21/02H01L21/3213H01L21/302
    • H01L21/02071
    • The invention provides a method of fabricating corrosion free metal lines. The method involves forming a thin polymeric passivation layer 30 over the metal layer 20 immediately after the metal deposition and before any photolithographic or etching processes. The polymeric passivation layer 30 is formed using a F-containing gas plasma treatment. The passivation layer prevents corrosion of the metal layer before a metal etch. The passivation layer is preferably composed of a polymeric of C, O, and F and has a thickness in a range of between about 40 and 80 .ANG.. The passivation layer is formed using a F-containing plasma treatment at a power of between 225 and 275 W, a pressure between about 80 and 120 mtorr, a CHF.sub.3 flow between about 40 and 60 sccm and for a duration between about 10 to 30 seconds. Following this, the metal layer is patterned using photo and etch steps.
    • 本发明提供一种制造无腐蚀金属线的方法。 该方法包括在金属沉积之后和在任何光刻或蚀刻工艺之前立即在金属层20上形成薄的聚合物钝化层30。 使用含F气体等离子体处理形成聚合物钝化层30。 钝化层在金属蚀刻之前防止金属层的腐蚀。 钝化层优选由C,O和F的聚合物组成,并且具有在约40至80埃范围内的厚度。 钝化层使用含氟等离子体处理形成,功率为225-275W,压力为约80至120毫托,CHF 3流量为约40至60sccm,持续时间为约10至30秒 。 之后,使用光刻和蚀刻步骤对金属层进行构图。
    • 26. 发明授权
    • Anti-corrosion etch process for etching metal interconnections extending
over and within contact openings
    • 用于蚀刻在接触开口之上和之内延伸的金属互连的防蚀刻蚀刻工艺
    • US5776832A
    • 1998-07-07
    • US682481
    • 1996-07-17
    • Chia-Dar HsiehYun-Hung ShenSheng-Liang PanJen Song Liu
    • Chia-Dar HsiehYun-Hung ShenSheng-Liang PanJen Song Liu
    • H01L21/02H01L21/3213H01L21/31
    • H01L21/02071
    • A method for anti-corrosion etching of metal interconnections, comprised in part of an aluminum layer, is achieved. The metal lines form self-aligned contacts (SAC) in contact openings in a polysilicon/metal dielectric (PMD) layer to a patterned underlying polysilicon layer. The method involves performing an oxygen ashing step in the same etching chamber immediately after etching the aluminum lines in a halogen gas, such as BCl.sub.3 and Cl.sub.2. This method using oxygen ashing avoids the use of the more traditional passivation gases CHF.sub.3 and CF.sub.4 which can overetch the polysilicon exposed in the SAC process that would cause electrical opens. And further, it avoids the formation of a polymer residue which is difficult to remove. The oxygen treatment reduces the Cl.sub.2 on the sidewalls of the Al lines, and also removes portions of the photoresist mask material containing Cl.sub.2. It is also easier to remove the remaining photoresist in a solvent stripping process. SEM measurements of the etch bias of the photoresist critical dimension also indicate the formation of a redeposition on the Al sidewalls which further protects the Al from corrosion when the wafers are removed from the etch chamber and are exposed to moisture.
    • 实现了在铝层的一部分中包含金属互连的抗腐蚀蚀刻的方法。 金属线在多晶硅/金属电介质(PMD)层的接触开口中形成自对准接触(SAC)到图案化的下层多晶硅层。 该方法包括在蚀刻卤素气体如BCl 3和Cl 2中的铝线之后立即在相同的蚀刻室中进行氧化灰化步骤。 这种使用氧灰的方法避免使用更传统的钝化气体CHF3和CF4,其可以过蚀刻在SAC工艺中暴露的将导致电气打开的多晶硅。 此外,它避免了难以除去的聚合物残余物的形成。 氧处理减少了Al线的侧壁上的Cl2,并且还去除了含有Cl 2的光致抗蚀剂掩模材料的部分。 在溶剂汽提过程中也更容易除去剩余的光致抗蚀剂。 光致抗蚀剂临界尺寸的蚀刻偏差的SEM测量也表明在Al侧壁上形成再沉积,当晶片从蚀刻室中移除并暴露于湿气时,Al侧壁进一步保护Al免受腐蚀。
    • 29. 发明授权
    • Noise reduction method and noise reduction apparatus
    • 降噪方法和降噪装置
    • US08416323B2
    • 2013-04-09
    • US12552078
    • 2009-09-01
    • Wei-Kuo LeeYun-Hung ShenJi-Wei Wan
    • Wei-Kuo LeeYun-Hung ShenJi-Wei Wan
    • H04N5/217
    • G06T5/002G06T5/20G06T2207/10024H04N1/409
    • The present invention provides a noise reduction method and apparatus for use in reducing noise of a digital image. The noise reduction apparatus comprises a threshold value generating unit, a determining unit, and an adjusting unit. The threshold value generating unit generates a noise threshold value according to a target window and a first chrominance value and a second chrominance value of an input pixel of the image. The determining unit determines whether the input pixel needs to be adjusted according to the noise threshold value and pixel values of neighboring pixels of the input pixel. The adjusting unit adjusts the pixel value of the input pixel when the input pixel is determined as needing to be adjusted. Using the noise reduction apparatus of the present invention, not only noise of a digital image can be identified, but also the degradation caused by the noise can be reduced and thus the overall picture quality can be improved.
    • 本发明提供一种用于降低数字图像噪声的降噪方法和装置。 噪声降低装置包括阈值生成单元,确定单元和调整单元。 阈值生成单元根据目标窗口和图像的输入像素的第一色度值和第二色度值生成噪声阈值。 确定单元确定输入像素是否需要根据噪声阈值和输入像素的相邻像素的像素值进行调整。 当输入像素被确定为需要调整时,调节单元调整输入像素的像素值。 使用本发明的降噪装置,不仅可以识别数字图像的噪声,还可以降低由噪声引起的劣化,从而可以提高整体图像质量。
    • 30. 发明授权
    • Image adjustment device and method thereof
    • 图像调整装置及其方法
    • US08174623B2
    • 2012-05-08
    • US12109423
    • 2008-04-25
    • Yi-Fan ChenYun-Hung ShenChao-Ting Kao
    • Yi-Fan ChenYun-Hung ShenChao-Ting Kao
    • H04N5/14
    • H04N9/77
    • The present invention provides a device and an image adjustment method by simultaneously adjusting the luminance and the chrominance of an image. The device comprises a luminance analysis device, a contrast adjusting device, a luminance adjusting device, a chrominance compensation device and a luminance gain adjusting device. The method comprises steps of: generating a maximum input luminance signal, an average input luminance signal and a minimum input luminance signal according to an input luminance signal; generating a contrast value according to at least one of the maximum input luminance signal and the average input luminance signal; generating an input luminance offset according to the input luminance signal and the minimum input luminance signal; generating an output chrominance signal according to the contrast value and an input chrominance signal; and generating an output luminance signal according to the input luminance offset and the contrast value.
    • 本发明通过同时调整图像的亮度和色度来提供装置和图像调整方法。 该装置包括亮度分析装置,对比度调节装置,亮度调节装置,色度补偿装置和亮度增益调节装置。 该方法包括以下步骤:根据输入亮度信号产生最大输入亮度信号,平均输入亮度信号和最小输入亮度信号; 根据最大输入亮度信号和平均输入亮度信号中的至少一个产生对比度值; 根据输入亮度信号和最小输入亮度信号产生输入亮度偏移; 根据对比度值和输入色度信号产生输出色度信号; 以及根据输入亮度偏移和对比度值产生输出亮度信号。