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1. 发明授权

US5776832A Anti-corrosion etch process for etching metal interconnections extending over and within contact openings 失效
标题翻译：用于蚀刻在接触开口之上和之内延伸的金属互连的防蚀刻蚀刻工艺
公开(公告)号：US5776832A
公开(公告)日：1998-07-07
申请号：US682481
申请日：1996-07-17
申请人： Chia-Dar Hsieh , Yun-Hung Shen , Sheng-Liang Pan , Jen Song Liu
发明人： Chia-Dar Hsieh , Yun-Hung Shen , Sheng-Liang Pan , Jen Song Liu
IPC分类号： H01L21/02 , H01L21/3213 , H01L21/31
CPC分类号： H01L21/02071
摘要： A method for anti-corrosion etching of metal interconnections, comprised in part of an aluminum layer, is achieved. The metal lines form self-aligned contacts (SAC) in contact openings in a polysilicon/metal dielectric (PMD) layer to a patterned underlying polysilicon layer. The method involves performing an oxygen ashing step in the same etching chamber immediately after etching the aluminum lines in a halogen gas, such as BCl.sub.3 and Cl.sub.2. This method using oxygen ashing avoids the use of the more traditional passivation gases CHF.sub.3 and CF.sub.4 which can overetch the polysilicon exposed in the SAC process that would cause electrical opens. And further, it avoids the formation of a polymer residue which is difficult to remove. The oxygen treatment reduces the Cl.sub.2 on the sidewalls of the Al lines, and also removes portions of the photoresist mask material containing Cl.sub.2. It is also easier to remove the remaining photoresist in a solvent stripping process. SEM measurements of the etch bias of the photoresist critical dimension also indicate the formation of a redeposition on the Al sidewalls which further protects the Al from corrosion when the wafers are removed from the etch chamber and are exposed to moisture.
摘要翻译：实现了在铝层的一部分中包含金属互连的抗腐蚀蚀刻的方法。金属线在多晶硅/金属电介质（PMD）层的接触开口中形成自对准接触（SAC）到图案化的下层多晶硅层。该方法包括在蚀刻卤素气体如BCl 3和Cl 2中的铝线之后立即在相同的蚀刻室中进行氧化灰化步骤。这种使用氧灰的方法避免使用更传统的钝化气体CHF3和CF4，其可以过蚀刻在SAC工艺中暴露的将导致电气打开的多晶硅。此外，它避免了难以除去的聚合物残余物的形成。氧处理减少了Al线的侧壁上的Cl2，并且还去除了含有Cl 2的光致抗蚀剂掩模材料的部分。在溶剂汽提过程中也更容易除去剩余的光致抗蚀剂。光致抗蚀剂临界尺寸的蚀刻偏差的SEM测量也表明在Al侧壁上形成再沉积，当晶片从蚀刻室中移除并暴露于湿气时，Al侧壁进一步保护Al免受腐蚀。

2. 发明授权

US5905306A Metal contact to a novel polysilicon contact extension 失效
标题翻译：金属接触到一个新颖的多晶硅接触延伸
公开(公告)号：US5905306A
公开(公告)日：1999-05-18
申请号：US912536
申请日：1997-08-18
申请人： Bo-Jeih Cheng , Chang Fu , Jen Song Liu
发明人： Bo-Jeih Cheng , Chang Fu , Jen Song Liu
IPC分类号： H01L21/768 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76895 , H01L2924/0002
摘要： A method has been developed for forming a metal contact structure, to an underlying polysilicon contact extension structure, without degrading the polysilicon contact extension structure during the metal contact structure patterning procedure. The process features opening a hole in an insulator layer, to an underlying polysilicon extension structure. The overlying metal contact structure is then patterned to have a width larger then the width of the opened hole in the insulator. Therefore the underlying polysilicon contact extension structure is not exposed to the RIE procedures used to define the metal contact structure.
摘要翻译：已经开发了用于在金属接触结构图案化过程中形成金属接触结构到下面的多晶硅接触延伸结构而不降低多晶硅接触延伸结构的方法。该工艺特征在绝缘体层中打开一个孔，到下面的多晶硅延伸结构。然后将覆盖的金属接触结构图案化成具有比绝缘体中开孔的宽度大的宽度。因此，下面的多晶硅接触延伸结构不暴露于用于限定金属接触结构的RIE程序。

3. 发明授权

US6017393A Photoresist supply system with air venting 有权
标题翻译：光电抗蚀剂供气系统具有通气功能
公开(公告)号：US6017393A
公开(公告)日：2000-01-25
申请号：US196751
申请日：1998-11-20
申请人： Jen Song Liu , Bii Junq Chang , Jen Shang Fang , Hao Wei Chang
发明人： Jen Song Liu , Bii Junq Chang , Jen Shang Fang , Hao Wei Chang
IPC分类号： B05B9/04 , G03F7/16 , B05C21/00
CPC分类号： B05B9/0403 , G03F7/16
摘要： A system for pumping resist to a wafer coating machine includes a line that returns a selected proportion of the resist entering the resist pump to the resist supply tank. The return line to the tank is connected to the pump outlet at a higher point than the pump outlet to the wafer coating machine, and the resist that is returned to the tank carries substantially all of the bubbles that are carried in the resist entering the tank. The bubbles are removed from the resist in the tank and the resist can be used normally.
摘要翻译：用于将抗蚀剂泵送到晶片涂布机的系统包括将进入抗蚀剂泵的抗蚀剂的选定比例返回到抗蚀剂供应罐的管线。到罐的返回管线比在泵出口高于晶片涂布机的泵出口处连接到泵出口，并且返回到罐的抗蚀剂基本上承载在进入罐的抗蚀剂中携带的所有气泡。气泡从罐中的抗蚀剂中除去，抗蚀剂可以正常使用。

4. 发明授权

US5858466A Photoresist supply system with air venting 失效
公开(公告)号：US5858466A
公开(公告)日：1999-01-12
申请号：US668792
申请日：1996-06-24
申请人： Jen Song Liu , Bii Juno Chang , Jen Shang Fang , Hao Wei Chang
发明人： Jen Song Liu , Bii Juno Chang , Jen Shang Fang , Hao Wei Chang
IPC分类号： B05B9/04 , G03F7/16 , B05D3/00 , B05D1/40
CPC分类号： B05B9/0403 , G03F7/16
摘要： A system for pumping resist to a wafer coating machine includes a line that returns a selected proportion of the resist entering the resist pump to the resist supply tank. The return line to the tank is connected to the pump outlet at a higher point than the pump outlet to the wafer coating machine, and the resist that is returned to the tank carries substantially all of the bubbles that are carried in the resist entering the tank. The bubbles are removed from the resist in the tank and the resist can be used normally.

5. 发明授权

US5691250A Method of forming a metal contact to a novel polysilicon contact extension 失效
标题翻译：形成金属接触到新型多晶硅接触延伸的方法
公开(公告)号：US5691250A
公开(公告)日：1997-11-25
申请号：US705452
申请日：1996-08-29
申请人： Bo-Jeih Cheng , Chang Fu , Jen Song Liu
发明人： Bo-Jeih Cheng , Chang Fu , Jen Song Liu
IPC分类号： H01L21/768 , H01L21/324
CPC分类号： H01L21/76895 , H01L2924/0002
摘要： A method has been developed for forming a metal contact structure, to an underlying polysilicon contact extension structure, without degrading the polysilicon contact extension structure during the metal contact structure patterning procedure. The process features opening a hole in an insulator layer, to an underlying polysilicon extension structure. The overlying metal contact structure is then patterned to have a width larger then the width of the opened hole in the insulator. Therefore the underlying polysilicon contact extension structure is not exposed to the RIE procedures used to define the metal contact structure.
摘要翻译：已经开发了用于在金属接触结构图案化过程中形成金属接触结构到下面的多晶硅接触延伸结构而不降低多晶硅接触延伸结构的方法。该工艺特征在绝缘体层中打开一个孔，到下面的多晶硅延伸结构。然后将覆盖的金属接触结构图案化成具有比绝缘体中开孔的宽度大的宽度。因此，下面的多晶硅接触延伸结构不暴露于用于限定金属接触结构的RIE程序。

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