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21. 发明授权

US06992528B2 Semiconductor device 有权
公开(公告)号：US06992528B2
公开(公告)日：2006-01-31
申请号：US10870921
申请日：2004-06-21
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H03G3/20
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.

22. 发明授权

US06765268B2 Multiple transistors having a common gate pad between first group of drains and second group of drains 有权
标题翻译：多个晶体管具有在第一组漏极和第二组漏极之间的公共栅极焊盘
公开(公告)号：US06765268B2
公开(公告)日：2004-07-20
申请号：US10291834
申请日：2002-11-12
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L2976
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

23. 发明授权

US06639257B2 Hetero-junction bipolar transistor having a dummy electrode 失效
标题翻译：具有虚拟电极的异质结双极晶体管
公开(公告)号：US06639257B2
公开(公告)日：2003-10-28
申请号：US10133498
申请日：2002-04-29
申请人： Atsushi Kurokawa , Masao Yamane , Kazuhiro Mochizuki
发明人： Atsushi Kurokawa , Masao Yamane , Kazuhiro Mochizuki
IPC分类号： H01L310328
CPC分类号： H01L29/7304 , H01L21/8252 , H01L27/0605 , H01L28/20 , H01L29/73
摘要： A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a semiconductor substrate. In the bipolar transistor device, the base layers of a plurality of the transistor elements are extended in parallel to each other and those base layers are separated from each other. In each separated base layer, a first base electrode is formed on a part of the base layer which is separated from an emitter junction with the emitter layer, and a second base electrode is formed on another portion of the base layer closer to the emitter junction than the first base electrode. To dispose the base electrodes of a plurality of the transistor elements in parallel to each other, a base wiring is connected to the first base electrodes of those elements electrically. Consequently, a ballast resistor that causes no variation in the resistance value can be connected to each of a plurality of the transistor elements.
摘要翻译：通过并联连接多个晶体管元件来形成具有大电流容量的双极晶体管器件，每个晶体管元件具有分别形成在半导体衬底中的集电极层，基极层和发射极层。在双极晶体管器件中，多个晶体管元件的基极层彼此平行地延伸，并且这些基极层彼此分离。在每个分离的基底层中，在与发射极层的发射极结分离的基底层的一部分上形成第一基极，并且第二基极形成在靠近发射极结的基极层的另一部分上比第一基极。为了将多个晶体管元件的基极电极彼此平行地配置，基极配线与这些元件的第一基极电连接。因此，不会导致电阻值变动的镇流电阻器可以连接到多个晶体管元件中的每一个。

24. 发明授权

US08022537B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08022537B2
公开(公告)日：2011-09-20
申请号：US12203851
申请日：2008-09-03
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L23/48 , H01L23/52 , H01R11/00
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

25. 发明申请

US20070034946A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20070034946A1
公开(公告)日：2007-02-15
申请号：US11581587
申请日：2006-10-17
申请人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
发明人： Hitoshi Akamine , Masashi Suzuki , Masao Yamane , Tetsuaki Adachi
IPC分类号： H01L29/76
CPC分类号： H01L27/0207 , H01L23/4824 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L27/088 , H01L29/0696 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/4238 , H01L29/7835 , H01L2223/6644 , H01L2223/6688 , H01L2224/05599 , H01L2224/45099 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/13091 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F3/189 , H03F3/211 , H03F3/601 , H03F3/68 , H03F3/72 , H03F2200/294 , H03F2200/372 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor device comprising a semiconductor substrate, and transistors formed on the semiconductor substrate, wherein control electrode terminals constituting external electrode terminals of the transistors, and first electrode terminals which transmit output signals, are provided on a main surface of the semiconductor substrate, wherein the control electrode terminals are provided at least one, and a plurality of the first electrode terminals are arranged on one side and a plurality of the first electrode terminals are arranged on the other side with the control electrode terminals being interposed therebetween, wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on one side of the control electrode terminals constitute a first transistor portion, and wherein a portion including the control electrode terminals and a plurality of the first electrode terminals located on the other side of the control electrode terminals constitute a second transistor portion. The semiconductor device is quadrangular.
摘要翻译：本发明提供一种半导体器件，包括半导体衬底和形成在半导体衬底上的晶体管，其中构成晶体管的外部电极端子的控制电极端子和传输输出信号的第一电极端子设置在半导体的主表面上基板，其中控制电极端子设置为至少一个，并且多个第一电极端子布置在一侧，并且多个第一电极端子布置在另一侧，其中控制电极端子插入其间，其中包括控制电极端子和位于控制电极端子一侧的多个第一电极端子的部分构成第一晶体管部分，并且其中包括控制电极端子和位于第一晶体管部分上的多个第一电极端子的部分另一边的控制电极端子构成第二晶体管部分。半导体器件是四边形。

26. 发明申请

US20060167620A1 System and method for guiding a vehicle 有权
标题翻译：引导车辆的系统和方法
公开(公告)号：US20060167620A1
公开(公告)日：2006-07-27
申请号：US11315816
申请日：2005-12-22
申请人： Toru Takagi , Susumu Fujita , Masao Yamane
发明人： Toru Takagi , Susumu Fujita , Masao Yamane
IPC分类号： G01C21/36
CPC分类号： G08G1/161 , G01C21/3407 , G01C21/3632 , G01C21/3655
摘要： A guide system terminal device is provided to facilitate group operation vehicles. The guide system terminal device has a transceiver that receives the traveling environment information from another vehicle, such as for the turn signal, vehicle speed, running position, a road change judgment module that judges course changes by the other vehicle based on the traveling environment information of the other vehicle, and a user interface that outputs the judgment result obtained by road change judgment module. For example, the road change judgment module judges a left/right turn to have occurred when the blinker information acquired by turn signal sensor lasts longer than a prescribed time, and when the maximum value of the change in vehicle speed exceeds a prescribed level.
摘要翻译：提供引导系统终端装置以便于组操作车辆。引导系统终端装置具有：收发器，其接收来自其他车辆的行驶环境信息，例如转向信号，车速，行驶位置，道路变化判断模块，其基于行驶环境信息来判断由其他车辆的路线变化以及输出由道路改变判断模块获得的判断结果的用户界面。例如，当由转向信号传感器获取的指示灯信息持续时间超过规定时间时，并且当车速的变化的最大值超过规定水平时，道路变化判断模块判断左/右转弯已经发生。

27. 发明授权

US06403991B1 Semiconductor device and method for fabricating the same 失效
公开(公告)号：US06403991B1
公开(公告)日：2002-06-11
申请号：US09639754
申请日：2000-08-15
申请人： Atsushi Kurokawa , Masao Yamane , Kazuhiro Mochizuki
发明人： Atsushi Kurokawa , Masao Yamane , Kazuhiro Mochizuki
IPC分类号： H01L31072
CPC分类号： H01L29/7304 , H01L21/8252 , H01L27/0605 , H01L28/20 , H01L29/73
摘要： A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a semiconductor substrate. In the bipolar transistor device, the base layers of a plurality of the transistor elements are extended in parallel to each other and those base layers are separated from each other. In each separated base layer, a first base electrode is formed on a part of the base layer which is separated from an emitter junction with the emitter layer, and a second base electrode is formed on another portion of the base layer closer to the emitter junction than the first base electrode. To dispose the base electrodes of a plurality of the transistor elements in parallel to each other, a base wiring is connected to the first base electrodes of those elements electrically. Consequently, a ballast resistor that causes no variation in the resistance value can be connected to each of a plurality of the transistor elements.

28. 发明授权

US5774792A Low distortion switch 失效
标题翻译：低失真开关
公开(公告)号：US5774792A
公开(公告)日：1998-06-30
申请号：US514194
申请日：1995-08-11
申请人： Satoshi Tanaka , Tatsuto Okamoto , Taro Kitayama , Masao Yamane
发明人： Satoshi Tanaka , Tatsuto Okamoto , Taro Kitayama , Masao Yamane
IPC分类号： H01P1/15 , H03K17/06 , H03K17/16 , H03K17/687 , H03K17/693 , H04B1/44
CPC分类号： H03K17/063 , H03K17/693
摘要： This invention is intended to realize a high frequency switch with a low distortion characteristic. In an SPDT switch consisting of a plurality of FETs, the FET on the receiver side through which a received signal passes and the shunt FET on the transmitter side are each formed of series-connected FETs, and a capacitor is connected between the first gate and the source and between the second gate and the drain. An inductance is connected in parallel with a series connection of FETs. This easily realizes a high frequency switch having a low voltage and a low distortion characteristic. The 1 dB compression level, an index of input-output characteristic, can be improved more than 5 dB over the conventional SPDT switch at an input level.
摘要翻译：本发明旨在实现具有低失真特性的高频开关。在由多个FET构成的SPDT开关中，接收端通过的接收侧的FET和发送侧的并联FET分别由串联连接的FET构成，电容器连接在第1栅极和第源极和第二栅极和漏极之间。电感与FET的串联连接并联。这容易实现具有低电压和低失真特性的高频开关。与传统SPDT开关输入电平相比，1 dB压缩电平（输入 - 输出特性指标）可以提高5 dB以上。

29. 发明授权

US5548138A Semiconductor device with reduced tunnel resistance and circuitry using the same 失效
标题翻译：具有减小的隧道电阻的半导体器件和使用其的电路
公开(公告)号：US5548138A
公开(公告)日：1996-08-20
申请号：US120818
申请日：1993-09-15
申请人： Takuma Tanimoto , Makoto Kudo , Tomoyoshi Mishima , Akishige Nakajima , Mitsuhiro Mori , Masao Yamane
发明人： Takuma Tanimoto , Makoto Kudo , Tomoyoshi Mishima , Akishige Nakajima , Mitsuhiro Mori , Masao Yamane
IPC分类号： H01L29/205 , H01L21/331 , H01L21/338 , H01L29/68 , H01L29/73 , H01L29/737 , H01L29/778 , H01L29/80 , H01L29/812 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/7376 , H01L29/802
摘要： In a semiconductor device using tunnel current and a barrier layer, arrangements are provided to lower the resistance of the semiconductor device. In particular, arrangements are provided to lower the parasitic resistance of a device such as a field effect transistor or an HBT, as well as to provide high-performance low noise amplifiers, mixers and the like using such reduced resistance semiconductor devices. To achieve this reduced resistance, carrier concentration or effective mass is designed not to be uniform in at least one of the semiconductor layers holding a barrier layer therebetween. For example, in an area near the barrier layer, the carrier concentration distribution can be large or the effective mass distribution can be small.
摘要翻译：在使用隧道电流和阻挡层的半导体器件中，提供了降低半导体器件的电阻的布置。特别地，提供了降低诸如场效应晶体管或HBT的器件的寄生电阻的布置，以及使用这种降低电阻的半导体器件来提供高性能低噪声放大器，混频器等。为了实现这种降低的电阻，在其间保持阻挡层的至少一个半导体层中设计载流子浓度或有效质量不均匀。例如，在阻挡层附近的区域中，载流子浓度分布可以较大，有效质量分布可以较小。

30. 发明授权

US08392061B2 Information presentation apparatus for vehicle and information presentation method for vehicle 有权
标题翻译：用于车辆的信息呈现装置和车辆信息呈现方法
公开(公告)号：US08392061B2
公开(公告)日：2013-03-05
申请号：US12568241
申请日：2009-09-28
申请人： Katsumi Ohta , Takeshi Mitamura , Hideaki Hozumi , Takeshi Oono , Masao Yamane , Hiroyuki Sakai
发明人： Katsumi Ohta , Takeshi Mitamura , Hideaki Hozumi , Takeshi Oono , Masao Yamane , Hiroyuki Sakai
IPC分类号： G06F7/00
CPC分类号： G01C21/3626 , G07C5/008
摘要： An information presentation apparatus for a vehicle includes an indicator mounted on the vehicle for indicating a target direction and a control unit for controlling the indicator. The control unit includes a function for acquiring a current position of the vehicle and a reference direction of the vehicle, a function for specifying a target and acquiring a target position, a function for calculating a target angle that indicates a target direction against the reference direction based on the target position, the current position and the reference direction, and a function for generating a presentation command based on the calculated target angle so as to indicate the target direction by the indicator. According to the apparatus, information for specifying the target position can be provided.
摘要翻译：车辆的信息呈现装置包括安装在车辆上的指示目标方向的指示器和用于控制指示器的控制单元。控制单元包括用于获取车辆的当前位置和车辆的基准方向的功能，用于指定目标并获取目标位置的功能，用于计算指示目标方向相对于参考方向的目标角度的功能基于目标位置，当前位置和参考方向，以及用于基于所计算的目标角度生成呈现命令以通过指示符指示目标方向的功能。根据该装置，可以提供用于指定目标位置的信息。

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