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21. 发明授权

US08460748B2 Patterned magnetic bit data storage media and a method for manufacturing the same 失效
标题翻译：图案化磁位数据存储介质及其制造方法
公开(公告)号：US08460748B2
公开(公告)日：2013-06-11
申请号：US12855399
申请日：2010-08-12
申请人： Frank Sinclair , Vikram Singh
发明人： Frank Sinclair , Vikram Singh
IPC分类号： B05D5/12
CPC分类号： G11B5/012 , B82Y10/00 , G11B5/743
摘要： An improved patterned magnetic bit data storage media and a method for manufacturing the same is disclosed. In one particular exemplary embodiment, the improved patterned magnetic bit data storage media may comprise an active region exhibiting substantially ferromagnetism; and an inactive region exhibiting substantially paramagnetism, the inactive region comprising at least two grains and a grain boundary interposed therebetween, wherein each of the at least two grains contain ferromagnetic material, and wherein the at least two grains are antiferromagnetically coupled.
摘要翻译：公开了一种改进的图案化磁位数据存储介质及其制造方法。在一个特定示例性实施例中，改进的图案化磁位数据存储介质可以包括显示出基本上铁磁性的有源区; 和表现出基本上顺磁性的非活性区域，所述非活性区域包含至少两个晶粒和插入其间的晶界，其中所述至少两个晶粒中的每一个含有铁磁材料，并且其中所述至少两个晶粒是反铁磁耦合的。

22. 发明申请

US20110256732A1 Pulsed Plasma to Affect Conformal Processing 有权
标题翻译：脉冲等离子体影响保形加工
公开(公告)号：US20110256732A1
公开(公告)日：2011-10-20
申请号：US12760847
申请日：2010-04-15
申请人： Helen Maynard , Vikram Singh , Svetlana Radovanov , Harold Persing
发明人： Helen Maynard , Vikram Singh , Svetlana Radovanov , Harold Persing
IPC分类号： H01L21/30 , C23C14/48
CPC分类号： H01L21/02274 , H01L21/2236 , H01L21/3065 , H01L29/66803
摘要： A plasma processing method is provided. The plasma processing method includes using the after-glow of a pulsed power plasma to perform conformal processing. During the afterglow, the equipotential field lines follow the contour of the workpiece surface, allowing ions to be introduced in a variety of incident angles, especially to non-planar surfaces. In another aspect of the disclosure, the platen may be biased positively during the plasma afterglow to attract negative ions toward the workpiece. Various conformal processing steps, such as implantation, etching and deposition may be performed.
摘要翻译：提供等离子体处理方法。等离子体处理方法包括使用脉冲功率等离子体的余辉进行保形加工。在余辉期间，等电场线跟随工件表面的轮廓，允许以各种入射角度，特别是非平面表面引入离子。在本公开的另一方面，压片可在等离子体余辉期间被正向偏压以将负离子吸引到工件。可以执行各种适形处理步骤，例如植入，蚀刻和沉积。

23. 发明申请

US20100159120A1 PLASMA ION PROCESS UNIFORMITY MONITOR 审中-公开
标题翻译：等离子体过程均匀监测
公开(公告)号：US20100159120A1
公开(公告)日：2010-06-24
申请号：US12341574
申请日：2008-12-22
申请人： Joseph P. Dzengeleski , George M. Gammel , Bernard G. Lindsay , Vikram Singh
发明人： Joseph P. Dzengeleski , George M. Gammel , Bernard G. Lindsay , Vikram Singh
IPC分类号： C23C14/48 , B05C11/00
CPC分类号： H01J37/32935
摘要： An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.
摘要翻译：离子均匀性监测装置位于等离子体处理室内，并且包括位于室内的工件上方并远离工件的多个传感器。传感器被配置为检测从暴露于等离子体处理的工件的表面发射的二次电子的数量。每个传感器输出与检测到的二次电子成比例的电流信号。电流比较器电路输出由多个电流信号中的每一个产生的经处理的信号。在等离子体处理期间从工件发射的二次电子的检测表示跨工件表面的均匀性特征，并且可以在原位和在线等离子体处理期间进行。

24. 发明授权

US07737013B2 Implantation of multiple species to address copper reliability 失效
标题翻译：植入多种物种以解决铜的可靠性
公开(公告)号：US07737013B2
公开(公告)日：2010-06-15
申请号：US12255181
申请日：2008-10-21
申请人： Heyun Yin , George D. Papasouliotis , Vikram Singh
发明人： Heyun Yin , George D. Papasouliotis , Vikram Singh
IPC分类号： H01L21/00
CPC分类号： H01L21/76846 , H01L21/76849 , H01L21/76867
摘要： A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.
摘要翻译：第一种和第二种被植入到可以是铜的衬底的导体中。可以顺序地或至少部分地同时植入第一种和第二种。通过第二种物质的存在来防止第一种在基底导体内的扩散。在一个具体实例中，第一种是硅，第二种是氮，尽管其它组合是可能的。

25. 发明申请

US20100098851A1 TECHNIQUES FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20100098851A1
公开(公告)日：2010-04-22
申请号：US12254496
申请日：2008-10-20
申请人： Shigemi MURAKAWA , Vikram Singh , George Papasouliotis , Joseph C. Olson , Paul J. Murphy , Gary E. Dickerson
发明人： Shigemi MURAKAWA , Vikram Singh , George Papasouliotis , Joseph C. Olson , Paul J. Murphy , Gary E. Dickerson
IPC分类号： C23C16/44 , C23C16/54
CPC分类号： C23C16/45544
摘要： Techniques for atomic layer deposition (ALD) are disclosed. In one particular exemplary embodiment, the techniques may be realized as a system for ALD comprising a plurality of reactors in a stacked configuration, wherein each reactor comprises a wafer holding portion for holding a target wafer, a gas assembly coupled to the plurality of reactors and configured to provide at least one gas to at least one of the plurality of reactors, and an exhaust assembly coupled to the plurality of reactors and configured to exhaust the at least one gas from the at least one of the plurality of reactors. The gas assembly may further comprise a valve assembly coupled to each of the first gas inlet, the second gas inlet, and the third gas inlet, where the valve assembly is configured to selectively release at least one of the first gas, the second gas, and the third gas.
摘要翻译：公开了原子层沉积技术（ALD）。在一个特定的示例性实施例中，这些技术可以被实现为包括堆叠配置中的多个反应器的ALD系统，其中每个反应器包括用于保持目标晶片的晶片保持部分，耦合到多个反应器的气体组件，被配置为向所述多个反应器中的至少一个提供至少一个气体，以及联接到所述多个反应器并被配置为从所述多个反应器中的所述至少一个反应器排出所述至少一种气体的排气组件。气体组件还可以包括联接到第一气体入口，第二气体入口和第三气体入口中的每一个的阀组件，其中阀组件构造成选择性地释放第一气体，第二气体，和第三气体。

26. 发明申请

US20090266107A1 Integrated Controlled Freeze Zone (CFZ) Tower and Dividing Wall (DWC) for Enhanced Hydrocarbon Recovery 有权
标题翻译：集成控制冷冻区（CFZ）塔和分隔墙（DWC），用于增强烃回收
公开(公告)号：US20090266107A1
公开(公告)日：2009-10-29
申请号：US12518866
申请日：2007-11-20
申请人： Vikram Singh , Edward J. Grave , Paul Scott Northrop , Narasimhan Sundaram
发明人： Vikram Singh , Edward J. Grave , Paul Scott Northrop , Narasimhan Sundaram
IPC分类号： F25J3/00
CPC分类号： B01D3/166 , B01D3/14 , B01D3/141 , F25J3/0209 , F25J3/0233 , F25J3/0238 , F25J3/0266 , F25J2200/02 , F25J2200/50 , F25J2200/74 , F25J2200/96 , F25J2205/20 , F25J2205/40 , F25J2205/60 , F25J2205/80 , F25J2220/66 , F25J2240/40 , F25J2270/12 , F25J2280/40 , Y02C10/12
摘要： The present invention relates to methods and apparatuses for the operation of a distillation tower containing a controlled freezing zone and at least one distillation section. The process and tower design are utilized for the additional recovery of hydrocarbons from an acid gas. In this process, a separation process is utilized in which a multi-component feedstream is introduced into an apparatus that operates under solids forming conditions for at least one of the feedstream components. The freezable component, although typically CO2, H2S, or another acid gas, can be any component that has the potential for forming solids in the separation system. A dividing wall is added to at least a portion of the lower distillation section of the apparatus to effect the separation of at least some fraction of the hydrocarbons in that portion of the tower.
摘要翻译：本发明涉及用于操作含有受控冷冻区和至少一个蒸馏段的蒸馏塔的方法和设备。工艺和塔架设计用于从酸性气体中再次回收碳氢化合物。在该方法中，使用分离方法，其中将多组分进料流引入到在至少一种进料流组分的固体形成条件下操作的装置中。可冷冻组分虽然通常为CO 2，H 2 S或另一种酸性气体，但可以是在分离系统中具有形成固体的潜力的任何组分。将分隔壁加入到装置的低级蒸馏段的至少一部分中以在塔的该部分中分离至少一部分烃。

27. 发明申请

US20090061605A1 PROFILE ADJUSTMENT IN PLASMA ION IMPLANTER 有权
标题翻译：等离子体植入物的轮廓调整
公开(公告)号：US20090061605A1
公开(公告)日：2009-03-05
申请号：US12267193
申请日：2008-11-07
申请人： Ludovic GODET , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
发明人： Ludovic GODET , George D. Papasouliotis , Ziwei Fang , Richard Appel , Vincent Deno , Vikram Singh , Harold M. Persing
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/32412 , H01J37/32935 , H01J2237/31705 , H01L21/2236
摘要： A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction depth requirements. Bias ramping and bias ramp rate adjusting may be performed to achieve a desired dopant profile so that surface peak dopant profiles and retrograde dopant profiles are realized. The method may include an amorphization step in one embodiment.
摘要翻译：在等离子体掺杂系统中提供掺杂剂分布调整溶液以满足浓度和结深度要求的方法。可以执行偏置斜坡调整和偏置斜率调整以实现期望的掺杂剂分布，从而实现表面峰值掺杂剂分布和逆向掺杂剂分布。该方法可以包括在一个实施方案中的非晶化步骤。

28. 发明申请

US20080075880A1 Non-doping implantation process utilizing a plasma ion implantation system 审中-公开
标题翻译：利用等离子体离子注入系统的非掺杂注入工艺
公开(公告)号：US20080075880A1
公开(公告)日：2008-03-27
申请号：US11527158
申请日：2006-09-26
申请人： Anthony Renau , Vikram Singh
发明人： Anthony Renau , Vikram Singh
IPC分类号： C23C14/00
CPC分类号： H01L21/2236 , H01L21/265
摘要： Non-doping implantation process utilizing a plasma ion implantation system. A plasma ion implantation system is used to perform a non-doping implantation process such as a pre-amorphization implantation process or a strain altering implantation. Use of the plasma ion implantation system to perform a non-doping implantation process results in higher throughput and is conducive to sequential ion implantation processing.
摘要翻译：利用等离子体离子注入系统的非掺杂注入工艺。等离子体离子注入系统用于执行非掺杂注入工艺，例如预非晶化注入工艺或应变改变注入。使用等离子体离子注入系统执行非掺杂注入工艺导致更高的生产量并且有助于顺序离子注入处理。

29. 发明申请

US20070065576A1 Technique for atomic layer deposition 审中-公开
标题翻译：原子层沉积技术
公开(公告)号：US20070065576A1
公开(公告)日：2007-03-22
申请号：US11221710
申请日：2005-09-09
申请人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
发明人： Vikram Singh , Harold Persing , Edmund Winder , Jeffrey Hopwood , Anthony Renau
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/4554 , C23C16/45544
摘要： A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of a precursor substance, wherein the precursor substance comprises atoms of at least one first species and atoms of at least one second species, and wherein the supply provides the precursor substance to saturate a surface of the at least one substrate. The apparatus may further comprise a plasma source of metastable atoms of at least one third species, wherein the metabstable atoms are capable of desorbing the atoms of the at least one second species from the saturated surface of the at least one substrate to form one or more atomic layers of the at least one first species.
摘要翻译：公开了一种用于原子层沉积的技术。在一个特定的示例性实施例中，该技术可以通过用于原子层沉积的装置来实现。该装置可以包括具有用于保持至少一个基板的基板平台的处理室。该装置还可以包括前体物质的供应，其中所述前体物质包含至少一种第一种类的原子和至少一种第二物质的原子，并且其中所述供应提供所述前体物质以饱和所述至少一种基质。该装置可以进一步包含至少一种第三种类的亚稳态原子的等离子体源，其中可重构原子能够从至少一种底物的饱和表面解吸所述至少一种第二种类的原子以形成一种或多种所述至少一种第一种类的原子层。

30. 发明申请

US20060236931A1 Tilted Plasma Doping 审中-公开
标题翻译：倾斜等离子体兴奋剂
公开(公告)号：US20060236931A1
公开(公告)日：2006-10-26
申请号：US10908009
申请日：2005-04-25
申请人： Vikram Singh , James Buff , Rajesh Dorai
发明人： Vikram Singh , James Buff , Rajesh Dorai
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/32009 , H01J37/32752
摘要： A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.
摘要翻译：等离子体掺杂装置包括腔室和等离子体源，其在腔室中从掺杂气体产生离子。光栅位于腔室中。用于支撑靶的压板位于腔室中。光栅和靶中的至少一个被定向成使得从光栅提取的掺杂离子以非正常的入射角撞击靶。

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