基本信息:
- 专利标题： PLASMA ION PROCESS UNIFORMITY MONITOR
- 专利标题（中）：等离子体过程均匀监测
- 申请号：US12341574 申请日：2008-12-22
- 公开(公告)号：US20100159120A1 公开(公告)日：2010-06-24
- 发明人： Joseph P. Dzengeleski , George M. Gammel , Bernard G. Lindsay , Vikram Singh
- 申请人： Joseph P. Dzengeleski , George M. Gammel , Bernard G. Lindsay , Vikram Singh
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： C23C14/48
- IPC分类号： C23C14/48 ; B05C11/00
摘要：
An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.
摘要（中）：
离子均匀性监测装置位于等离子体处理室内，并且包括位于室内的工件上方并远离工件的多个传感器。 传感器被配置为检测从暴露于等离子体处理的工件的表面发射的二次电子的数量。 每个传感器输出与检测到的二次电子成比例的电流信号。 电流比较器电路输出由多个电流信号中的每一个产生的经处理的信号。 在等离子体处理期间从工件发射的二次电子的检测表示跨工件表面的均匀性特征，并且可以在原位和在线等离子体处理期间进行。