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21. 发明申请

US20090130590A1 PHOTORESIST COMPOSITIONS AND PROCESS FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER PHOTORESIST SYSTEMS 失效
标题翻译：多层次光电子系统的多光照组合物和工艺
公开(公告)号：US20090130590A1
公开(公告)日：2009-05-21
申请号：US11942062
申请日：2007-11-19
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara R. Varanasi
IPC分类号： G03C1/73 , G03F7/26
CPC分类号： G03F7/0048 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
摘要翻译：光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。

22. 发明申请

US20130288178A1 PHOTORESIST COMPOSITION CONTAINING A PROTECTED HYDROXYL GROUP FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF 有权
标题翻译：含有保护性羟基的负离子组合物及其形成方法的光电组合物
公开(公告)号：US20130288178A1
公开(公告)日：2013-10-31
申请号：US13457735
申请日：2012-04-27
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
IPC分类号： G03F7/20 , G03F7/027 , G03F7/004
CPC分类号： G03F7/0382 , G03F7/021 , G03F7/0397 , G03F7/20 , G03F7/325
摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
摘要翻译：本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。光致抗蚀剂组合物包括成像聚合物，交联剂和辐射敏感的酸发生剂。成像聚合物包括具有酸不稳定部分取代的羟基的单体单元。图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

23. 发明申请

US20120122031A1 PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF 审中-公开
标题翻译：用于负面发展的光电组合物及其使用的图案形成方法
公开(公告)号：US20120122031A1
公开(公告)日：2012-05-17
申请号：US12946232
申请日：2010-11-15
申请人： Kuang-Jung Chen , Sen Liu , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Sen Liu , Wu-Song Huang , Wai-Kin Li
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/325 , G03F7/0397
摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomeric unit having a pendant acid labile moiety and a second monomeric unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.
摘要翻译：本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。光致抗蚀剂组合物包括成像聚合物和辐射敏感酸产生剂。成像聚合物包括具有侧链酸不稳定部分的第一单体单元和包含反应性醚部分，异氰化物部分或异氰酸酯部分的第二单体单元。图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

24. 发明申请

US20100330810A1 METHOD FOR REMOVING THRESHOLD VOLTAGE ADJUSTING LAYER WITH EXTERNAL ACID DIFFUSION PROCESS 有权
标题翻译：用外部酸性扩散过程去除阈值电压调节层的方法
公开(公告)号：US20100330810A1
公开(公告)日：2010-12-30
申请号：US12490353
申请日：2009-06-24
申请人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
IPC分类号： H01L21/31
CPC分类号： H01L21/31122 , H01L21/823842 , H01L21/823857
摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
摘要翻译：本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

25. 发明授权

US07838198B2 Photoresist compositions and method for multiple exposures with multiple layer resist systems 有权
标题翻译：具有多层抗蚀剂体系的多次曝光的光刻胶组合物和方法
公开(公告)号：US07838198B2
公开(公告)日：2010-11-23
申请号：US11955451
申请日：2007-12-13
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li , Pushkara R. Varanasi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.
摘要翻译：一种方法和抗蚀剂组合物。抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。该影片被图案化成像。成像包括将膜暴露于辐射，导致产生酸催化剂。该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

26. 发明申请

US20090142704A1 METHOD FOR REDUCING SIDE LOBE PRINTING USING A BARRIER LAYER 有权
标题翻译：使用障碍层减少侧面印刷的方法
公开(公告)号：US20090142704A1
公开(公告)日：2009-06-04
申请号：US11949190
申请日：2007-12-03
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-kin Li
IPC分类号： G03F7/00
CPC分类号： G03F7/095
摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.
摘要翻译：通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

27. 发明申请

US20080085598A1 METHOD OF PATTERNING CONTACT HOLES 审中-公开
标题翻译：绘制接触孔的方法
公开(公告)号：US20080085598A1
公开(公告)日：2008-04-10
申请号：US11538475
申请日：2006-10-04
申请人： Wai-Kin Li , Kuang-Jung Chen , Wu-Song Huang
发明人： Wai-Kin Li , Kuang-Jung Chen , Wu-Song Huang
IPC分类号： H01L21/467
CPC分类号： H01L21/31144 , G03F1/70 , G03F7/203
摘要： A method forms a blocking mask first and then patterns a contact hole mask over the blocking mask to provide a method of patterning contact holes in a substrate. This method first forms a blocking layer on the substrate and then patterns the blocking layer to have first openings to form the blocking mask. Next, the method forms the contact hole layer on the substrate and the blocking mask, and patterns the contact hole layer to have regularly spaced second openings to form the contact hole mask. The patterning of the contact hole layer does not affect the blocking mask and the contact hole mask is aligned directly over the blocking mask. Then, the substrate is patterned through the first openings and the second openings such that the substrate is patterned only where the first openings and the second openings align with each other. Thus, the blocking mask controls which of the regularly spaced second openings will transfer into the substrate.
摘要翻译：一种方法首先形成阻挡掩模，然后在阻挡掩模上对接触孔掩模进行图案化，以提供在衬底中图形化接触孔的方法。该方法首先在衬底上形成阻挡层，然后将阻挡层图案化以具有第一开口以形成阻挡掩模。接下来，该方法在基板和阻挡掩模上形成接触孔层，并且使接触孔层图案具有规则间隔开的第二开口以形成接触孔掩模。接触孔层的图案化不影响阻挡掩模，并且接触孔掩模直接对准阻挡掩模。然后，通过第一开口和第二开口图案化衬底，使得仅在第一开口和第二开口彼此对准的情况下衬底被图案化。因此，阻挡掩模控制规则间隔开的第二开口中的哪一个将传递到衬底中。

28. 发明授权

US08293451B2 Near-infrared absorbing film compositions 有权
标题翻译：近红外吸收膜组合物
公开(公告)号：US08293451B2
公开(公告)日：2012-10-23
申请号：US12543003
申请日：2009-08-18
申请人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
发明人： Martin Glodde , Dario L. Goldfarb , Wu-Song Huang , Wai-Kin Li , Sen Liu , Pushkara R. Varanasi , Libor Vyklicky
IPC分类号： G03F7/00 , G03F7/004 , G03F7/028
CPC分类号： G03F7/091 , G03F9/7026
摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.
摘要翻译：包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法和光刻胶膜。

29. 发明申请

US20120156450A1 MULTI-EXPOSURE LITHOGRAPHY EMPLOYING DIFFERENTIALLY SENSITIVE PHOTORESIST LAYERS 审中-公开
标题翻译：使用差分感光层的多次曝光光刻
公开(公告)号：US20120156450A1
公开(公告)日：2012-06-21
申请号：US13406965
申请日：2012-02-28
申请人： Wu-Song Huang , Wai-kin Li , Ping-Chuan Wang
发明人： Wu-Song Huang , Wai-kin Li , Ping-Chuan Wang
IPC分类号： B32B3/00
CPC分类号： G03F7/70466 , Y10S438/947 , Y10S438/948 , Y10T428/24802
摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.
摘要翻译：在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。在第二光致抗蚀剂中形成包括线阵列的第二图案。在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外的第二光致抗蚀剂的暴露部分形成线图案的宽部分。线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

30. 发明授权

US08395228B2 Integration process to improve focus leveling within a lot process variation 有权
标题翻译：整合过程可以在很多过程变化中提高焦点调平
公开(公告)号：US08395228B2
公开(公告)日：2013-03-12
申请号：US12941375
申请日：2010-11-08
申请人： Wai-Kin Li , Wu-Song Huang , Dario Leonardo Goldfarb , Martin Glodde , Edward Engbrecht , Yiheng Xu
发明人： Wai-Kin Li , Wu-Song Huang , Dario Leonardo Goldfarb , Martin Glodde , Edward Engbrecht , Yiheng Xu
IPC分类号： H01L21/02
CPC分类号： H01L21/0332 , G03F7/091 , G03F7/094 , G03F9/7026
摘要： A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer.
摘要翻译：描述了改善半导体晶片的聚焦调平响应的方法。该方法包括在半导体衬底上组合有机和无机或金属近红外（NIR）硬掩模; 在组合的有机NIR吸收和无机或金属NIR吸收硬掩模上形成抗反射涂层（ARC）层; 以及在所述ARC层上形成光致抗蚀剂层。还描述了半导体结构，其包括基板，位于结构上方的抗蚀剂层; 以及位于衬底上方的吸收层。吸收层包括无机或金属NIR吸收硬掩模层。

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