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21. 发明授权

US07901514B2 Substrate cleaning method and developing apparatus 有权
标题翻译：基板清洗方法及显影装置
公开(公告)号：US07901514B2
公开(公告)日：2011-03-08
申请号：US12503412
申请日：2009-07-15
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B7/04
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method of cleaning a surface of a substrate that is processed by a developing process. The method includes pouring a cleaning liquid onto a central part of the substrate. A dry area that is not wetted with the cleaning liquid is created in a central part of the substrate by stopping pouring the cleaning liquid or by shifting a cleaning liquid pouring position to which the cleaning liquid is poured from the central part while the substrate holding device is rotating. The dry area is expanded outward from the central part of the substrate by rotating the substrate holding device at a rotating speed not lower than 1500 rpm without pouring the cleaning liquid onto the dry area. The cleaning liquid is poured onto an outer area contiguously surrounding the dry area on the surface of the substrate.
摘要翻译：清洗通过显影处理处理的基材表面的清洁方法。该方法包括将清洗液倒入基材的中心部分。在基板保持装置的中心部分，通过停止注入清洗液体，或者从中央部移动清洗液注入清洗液的位置，形成未被清洗液润湿的干燥区域正在旋转。通过以不低于1500rpm的旋转速度旋转基板保持装置，将干燥区域从基板的中心部分向外扩展，而不将清洗液体倾倒到干燥区域上。将清洗液倒入围绕基材表面的干燥区域的外部区域上。

22. 发明授权

US07604013B2 Substrate cleaning method and developing apparatus 有权
标题翻译：基板清洗方法及显影装置
公开(公告)号：US07604013B2
公开(公告)日：2009-10-20
申请号：US11074781
申请日：2005-03-09
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.
摘要翻译：一种清洁方法，通过除去溶解产物，通过除去半导体晶片的表面，通过利用显影处理来处理半导体晶片的表面，所述显影处理通过用显影剂润湿暴露的膜来形成半导体晶片上形成的曝光膜，从半导体晶片的表面。将清洗液通过清洗液倒出嘴注入到通过显影处理处理的旋转晶片的中心部分上，以将清洁液体以薄膜的形式展开在晶片的表面上。然后，移动清洗液倾倒嘴，在晶片的中心部分产生干燥区域，以1500rpm的速度旋转晶片，使干燥面积扩大。清洗液倾倒嘴以喷嘴移动速度移动到足够高的水平，以将清洁液注入位于干燥区域的边缘之前，并且在清洁液体倾倒嘴到达预定位置时停止清洗液体的倾倒距离晶片的中心80mm，或距离晶片的周边边缘朝向晶片中心5mm以上。清洗液可以通过预先设置在预定位置的另一个清洗液倒出喷嘴注入，并且清洗液通过清洗液倒出嘴可以在干燥区域的边缘到达清洗液倒入的部分之前立即停止通过清洗液倒出嘴。优选地，将气体瞬间吹到晶片的中心部分，以在干燥区域之前形成核心。

23. 发明申请

US20060048792A1 Substrate cleaning method and developing apparatus 有权
公开(公告)号：US20060048792A1
公开(公告)日：2006-03-09
申请号：US11074781
申请日：2005-03-09
申请人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
发明人： Junji Nakamura , Kousuke Yoshihara , Kentaro Yamamura , Fumiko Iwao , Hirofumi Takeguchi
IPC分类号： C23G1/00 , C03C23/00
CPC分类号： H01L21/67051 , B08B3/02 , B08B3/10 , G03F7/3021 , Y10S134/902
摘要： A cleaning method highly effectively cleans a surface of a semiconductor wafer by removing a dissolution product, produced when a surface of a semiconductor wafer is processed by a developing process that develops an exposed film formed on the semiconductor wafer by wetting the exposed film with a developer, from the surface of the semiconductor wafer. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto a central part of a rotating wafer processed by a developing process to spread the cleaning liquid in a film over the surface of the wafer. Then, the cleaning liquid pouring nozzle is shifted to create a dry area in a central part of the wafer and the wafer is rotated at 1500 rpm to expand the dry area. The cleaning liquid pouring nozzle is moved at a nozzle moving speed high enough to keep the cleaning liquid pouring position ahead of the margin of the dry area and pouring the cleaning liquid is stopped upon the arrival of the cleaning liquid pouring nozzle at a predetermined position at 80 mm from the center of the wafer or at 5 mm above toward the center of the wafer from the peripheral edge of the wafer. The cleaning liquid may be poured through another cleaning liquid pouring nozzle disposed beforehand at the predetermined position and pouring the cleaning liquid through the cleaning liquid pouring nozzle may be stopped immediately before the margin of the dry area reaches a part onto which the cleaning liquid is poured through the cleaning liquid pouring nozzle. Preferably, a gas is blown instantaneously against the central part of the wafer to form a core fore the dry area.

24. 发明授权

US08956694B2 Developing apparatus, developing method and storage medium 有权
标题翻译：显影装置，显影方法和存储介质
公开(公告)号：US08956694B2
公开(公告)日：2015-02-17
申请号：US12904458
申请日：2010-10-14
申请人： Hirofumi Takeguchi , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
发明人： Hirofumi Takeguchi , Tomohiro Iseki , Yuichi Yoshida , Kousuke Yoshihara
IPC分类号： B05D3/12 , G03C5/29 , G03F7/30
CPC分类号： G03F7/3021
摘要： A pretreatment process, carried out prior to a developing process, spouts pure water, namely, a diffusion-assisting liquid for assisting the spread of a developer over the surface of a wafer, through a cleaning liquid spouting nozzle onto a central part of the wafer to form a puddle of pure water. The developer is spouted onto the central part of the wafer for prewetting while the wafer is rotated at a high rotating speed to spread the developer over the surface of the wafer. The developer dissolves the resist film partly and produces a solution. The rotation of the wafer is reversed, for example, within 7 s in which the solution is being produced to reduce the water-repellency of the wafer by spreading the solution over the entire surface of the wafer. Then, the developer is spouted onto the rotating wafer to spread the developer on the surface of the wafer.
摘要翻译：在显影过程之前进行的预处理过程，喷出纯水，即用于辅助显影剂在晶片表面上的扩散的扩散辅助液体，通过清洗液喷射喷嘴到达晶片的中心部分形成一个纯净的水坑。将显影剂喷射到晶片的中心部分以进行预润湿，同时晶片以高转速旋转以将显影剂铺展在晶片的表面上。显影剂部分地溶解抗蚀剂膜并产生溶液。晶片的旋转例如在7秒内相反，其中产生溶液以通过在晶片的整个表面上扩散溶液来降低晶片的拒水性。然后，将显影剂喷射到旋转的晶片上，以将显影剂铺展在晶片的表面上。

25. 发明授权

US08147153B2 Rinsing method, developing method, developing system and computer-read storage medium 有权
标题翻译：冲洗方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US08147153B2
公开(公告)日：2012-04-03
申请号：US12913420
申请日：2010-10-27
申请人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
发明人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03C1/00
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

26. 发明授权

US07841787B2 Rinsing method, developing method, developing system and computer-read storage medium 有权
标题翻译：冲洗方法，开发方法，开发系统和计算机读取存储介质
公开(公告)号：US07841787B2
公开(公告)日：2010-11-30
申请号：US11554192
申请日：2006-10-30
申请人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
发明人： Hirofumi Takeguchi , Junji Nakamura , Kousuke Yoshihara
IPC分类号： G03D5/00 , G03C1/00 , G03C5/18 , G03C5/26 , B08B7/00 , B05D3/12
CPC分类号： G03D5/00 , B08B3/04 , H01L21/67051
摘要： The present invention provides a rinsing method capable of satisfactorily rinsing the surface of a resist film regardless of the condition of the surface of the resist film so that development defects caused by residuals produced by development may be reduced. A rinsing method of rinsing a substrate processed by a developing process for developing an exposed pattern comprises the steps of discharging a rinsing liquid onto a central part of the substrate processed by the developing process and coated with a developer puddle while the substrate is stopped or rotated (step 5), stopping discharging the rinsing liquid in a state where the developer puddle remains at least in a peripheral part of the substrate (step 6), and rotating the substrate at a high rotating speed to shake the developer remaining on the substrate off the substrate together with the rinsing liquid (step 7).
摘要翻译：本发明提供了能够令人满意地冲洗抗蚀剂膜的表面的冲洗方法，而与抗蚀剂膜的表面的状态无关，从而可以减少由显影产生的残留物引起的显影缺陷。漂洗通过用于显影曝光图案的显影工艺处理的基材的冲洗方法包括以下步骤：将冲洗液体排出到通过显影过程处理的基材的中心部分上，并在基材停止或旋转时涂覆显影剂水坑（步骤5），在显影剂熔池至少保持在基板的周边部分的状态下停止排出冲洗液体（步骤6），并且以高转速旋转基板以摇动残留在基板上的显影剂基底与冲洗液一起（步骤7）。

27. 发明申请

US20090033898A1 DEVELOPING APPARATUS, DEVELOPING METHOD AND STORAGE MEDIUM 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：US20090033898A1
公开(公告)日：2009-02-05
申请号：US12173262
申请日：2008-07-15
申请人： Taro Yamamoto , Hirofumi Takeguchi , Shuichi Nagamine
发明人： Taro Yamamoto , Hirofumi Takeguchi , Shuichi Nagamine
IPC分类号： G03B27/42 , G03F7/22
CPC分类号： G03B27/42 , G03F7/3021 , H01L21/6715 , H01L21/67178
摘要： A developing apparatus includes, to process substrates each coated with a resist and processed by an exposure process by a developing process, includes: plural developing units each provided with a substrate holding device for stably pouring a developer onto the substrate, a first developer nozzle to be used in common by the plural developing units to pour the developer in a band-shaped flow onto the substrates held by each of the substrate holding devices, a nozzle driving mechanism for carrying the first developer nozzle from one to another of the developing units, and moving the first developer nozzle with one end of a band-shaped area into which the developer is to be poured through the first developer nozzle directed toward the center of the substrate in each of the developing units such that a part in a surface of the substrate onto which the developer is poured moves from a central part toward a peripheral part or from a peripheral part toward a central part in the surface of the substrate to coat the surface of the substrate entirely with a developer film, and second developer nozzles for pouring the developer into a circular area or a band-shaped area of a short length shorter than that of the band-shaped area into which the first developer nozzle pours the developer in a central part of the substrate on which the developer film has been formed by the first developer nozzle. The nozzles are used selectively for developing steps.
摘要翻译：显影装置包括：处理各自涂覆有抗蚀剂并通过显影处理曝光处理的基板的显影装置包括：多个显影单元，每个显影单元设置有用于将显影剂稳定地浇注到基板上的基板保持装置，第一显影剂喷嘴通过多个显影单元共同使用将显影剂倾倒在由每个基板保持装置保持的基板上的带状流中，用于将第一显影剂喷嘴从另一个承载到显影单元的喷嘴驱动机构，并且移动第一显影剂喷嘴，其中一个带状区域的一端，显影剂将通过第一显影剂喷嘴注入到每个显影单元中的基板的中心，使得其中的部分在显影剂注入的基板从中心部分向周边部分移动，或从周边部分朝向表面的中心部分移动 e基板，其全部用显影剂膜涂覆基板的表面;以及第二显影剂喷嘴，用于将显影剂倾倒成比带状区域的短的短的短的长度的圆形区域或带状区域，第一显影剂喷嘴将显影剂倾倒在其上已由第一显影剂喷嘴形成有显影剂膜的基板的中心部分。喷嘴被选择性地用于显影步骤。

28. 发明授权

US07665918B2 Developing apparatus, developing method and storage medium 有权
标题翻译：显影装置，显影方法和存储介质
公开(公告)号：US07665918B2
公开(公告)日：2010-02-23
申请号：US12173262
申请日：2008-07-15
申请人： Taro Yamamoto , Hirofumi Takeguchi , Shuichi Nagamine
发明人： Taro Yamamoto , Hirofumi Takeguchi , Shuichi Nagamine
IPC分类号： G03D5/00 , G03B27/32 , B05C11/02
CPC分类号： G03B27/42 , G03F7/3021 , H01L21/6715 , H01L21/67178
摘要： A developing apparatus includes, to process substrates each coated with a resist and processed by an exposure process by a developing process, includes: plural developing units each provided with a substrate holding device for stably pouring a developer onto the substrate, a first developer nozzle to be used in common by the plural developing units to pour the developer in a band-shaped flow onto the substrates held by each of the substrate holding devices, a nozzle driving mechanism for carrying the first developer nozzle from one to another of the developing units, and moving the first developer nozzle with one end of a band-shaped area into which the developer is to be poured through the first developer nozzle directed toward the center of the substrate in each of the developing units such that a part in a surface of the substrate onto which the developer is poured moves from a central part toward a peripheral part or from a peripheral part toward a central part in the surface of the substrate to coat the surface of the substrate entirely with a developer film, and second developer nozzles for pouring the developer into a circular area or a band-shaped area of a short length shorter than that of the band-shaped area into which the first developer nozzle pours the developer in a central part of the substrate on which the developer film has been formed by the first developer nozzle. The nozzles are used selectively for developing steps.
摘要翻译：显影装置包括：处理各自涂覆有抗蚀剂并通过显影处理曝光处理的基板的显影装置包括：多个显影单元，每个显影单元设置有用于将显影剂稳定地浇注到基板上的基板保持装置，第一显影剂喷嘴通过多个显影单元共同使用将显影剂倾倒在由每个基板保持装置保持的基板上的带状流中，用于将第一显影剂喷嘴从另一个承载到显影单元的喷嘴驱动机构，并且移动第一显影剂喷嘴，其中一个带状区域的一端，显影剂将通过第一显影剂喷嘴注入到每个显影单元中的基板的中心，使得其中的部分在显影剂注入的基板从中心部分向周边部分移动，或从周边部分朝向表面的中心部分移动 e基板，用显影剂膜整体地涂覆基板的表面;以及第二显影剂喷嘴，用于将显影剂倾倒到比带状区域的短的短的长度的圆形区域或带状区域中，显影剂喷嘴将显影剂倾倒在其上已由第一显影剂喷嘴形成有显影剂膜的基板的中心部分。喷嘴被选择性地用于显影步骤。

29. 发明授权

US08440266B2 Developing device, developing method and storage medium 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：US08440266B2
公开(公告)日：2013-05-14
申请号：US12699228
申请日：2010-02-03
申请人： Norikatsu Sato , Hirofumi Takeguchi
发明人： Norikatsu Sato , Hirofumi Takeguchi
IPC分类号： B05D1/36 , B05D7/00 , B05D3/12 , B05C11/00 , B05C11/02 , B05B7/06
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A developer nozzle supplies a developer onto the surface of a substrate rotating around a vertical axis, while a pure water nozzle supplies pure water onto the surface of the rotating substrate. The pure water nozzle is spaced apart from the developer nozzle and located on an outer side of the substrate with respect to the developer nozzle. The pure water restricts flow of the developer on the substrate and causes the developer to spread toward a clockwise side of the substrate when the substrate rotates in a clockwise direction. A liquid film containing the developer and the pure water is formed on the substrate. The developer nozzle and the pure water nozzle are spaced apart from each other to suppress splattering of the developer and the pure water due to collision of the developer with the pure water.
摘要翻译：显影剂喷嘴将显影剂供给到围绕垂直轴线旋转的基板的表面上，而纯水喷嘴将纯水供应到旋转基板的表面上。纯水喷嘴与显影剂喷嘴间隔开并且相对于显影剂喷嘴位于基板的外侧。纯水限制衬底上显影剂的流动，并且当衬底沿顺时针方向旋转时，使显影剂向衬底的顺时针侧扩展。在基板上形成含有显影剂和纯水的液膜。显影剂喷嘴和纯水喷嘴彼此间隔开以抑制由于显影剂与纯水的碰撞而引起的显影剂和纯水的飞溅。

30. 发明申请

US20100203250A1 DEVELOPING DEVICE, DEVELOPING METHOD AND STORAGE MEDIUM 有权
标题翻译：开发设备，开发方法和存储介质
公开(公告)号：US20100203250A1
公开(公告)日：2010-08-12
申请号：US12699228
申请日：2010-02-03
申请人： Norikatsu Sato , Hirofumi Takeguchi
发明人： Norikatsu Sato , Hirofumi Takeguchi
IPC分类号： B05D1/36 , B05C5/00
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A developer nozzle supplies a developer onto the surface of a substrate rotating around a vertical axis, while a pure water nozzle supplies pure water onto the surface of the rotating substrate. The pure water nozzle is spaced apart from the developer nozzle and located on an outer side of the substrate with respect to the developer nozzle. The pure water restricts flow of the developer on the substrate and causes the developer to spread toward a clockwise side of the substrate when the substrate rotates in a clockwise direction. A liquid film containing the developer and the pure water is formed on the substrate. The developer nozzle and the pure water nozzle are spaced apart from each other to suppress splattering of the developer and the pure water due to collision of the developer with the pure water.
摘要翻译：显影剂喷嘴将显影剂供给到围绕垂直轴线旋转的基板的表面上，而纯水喷嘴将纯水供应到旋转基板的表面上。纯水喷嘴与显影剂喷嘴间隔开并且相对于显影剂喷嘴位于基板的外侧。纯水限制衬底上显影剂的流动，并且当衬底沿顺时针方向旋转时，使显影剂向衬底的顺时针侧扩展。在基板上形成含有显影剂和纯水的液膜。显影剂喷嘴和纯水喷嘴彼此间隔开以抑制由于显影剂与纯水的碰撞而引起的显影剂和纯水的飞溅。

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