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21. 发明授权

US5196702A Photo-sensor and method for operating the same 失效
标题翻译：光电传感器及其操作方法
公开(公告)号：US5196702A
公开(公告)日：1993-03-23
申请号：US824857
申请日：1991-12-11
申请人： Kazutaka Tsuji , Tadaaki Hirai , Yukio Takasaki , Haruo Itoh , Tetshuhiko Takahashi , Kenichi Okajima
发明人： Kazutaka Tsuji , Tadaaki Hirai , Yukio Takasaki , Haruo Itoh , Tetshuhiko Takahashi , Kenichi Okajima
IPC分类号： H04N5/32
CPC分类号： H04N5/32
摘要： An optically reading type photo-sensor for reading out an information signal of a signal light with a signal reading light includes a first photoconductor (101) and a second photoconductor (102) interposed between two electrodes (104 and 105); an intermediate region (103) disposed between those two photoconductors for storing and recombining carriers; and an optical source (107) for emitting a signal reading light for uninformalizing the potential in said second photoconductor (102), whereby a successive signal reading can be accomplished without any special preparations for the incidence of the signal light. The photo-sensor can be applied to a variety of imaging devices.
摘要翻译： PCT No.PCT / JP88 / 01073 Sec。 371日期1989年8月21日 102（e）日期1989年8月21日PCT提交1988年10月21日PCT公布。出版物WO89 / 04063 用于读出具有信号读取光的信号光的信息信号的光学读取型光电传感器包括插入在两个电极（104和105）之间的第一感光体（101）和第二感光体（102））; 设置在这两个光电导体之间的用于存储和重组载体的中间区域（103）以及用于发射用于对所述第二光电导体（102）中的电位进行非正规化的信号读取光的光源（107），由此可以在不对信号光的入射进行任何特别准备的情况下实现连续的信号读取。光电传感器可以应用于各种成像设备。

22. 发明授权

US4556816A Photoelectric device 失效
标题翻译：光电器件
公开(公告)号：US4556816A
公开(公告)日：1985-12-03
申请号：US510910
申请日：1983-07-05
申请人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
发明人： Yoshinori Imamura , Saburo Ataka , Yukio Takasaki , Yasuo Tanaka , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H01J31/00 , H01J31/26
CPC分类号： H01L31/095 , H01J29/456 , H01J9/233
摘要： Disclosed is a photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen as an indispensable constituent element, the amorphous photoconductor layer being disposed in adjacency to the signal electrode, characterized by comprising a thin layer interposed between the signal electrode and the amorphous photoconductor layer, the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from the group consisting of oxides of at least one element selected from the group that consists of Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co, nitrides of at least one element selected from the group that consists of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of at least one element selected from the group that consists of Na, Mg, Li, Ba, Ca and K.
摘要翻译：公开了至少具有信号电极的光电器件和主要成分为硅并且含有氢作为不可或缺的构成元件的非晶质感光体层，非晶体感光体层与信号电极相邻设置，其特征在于，包括薄的层，其被设置在信号电极和非晶体感光体层之间，薄层由主要成分为选自由Si组成的组中的至少一种元素的氧化物组成的组中的至少一种化合物的无机材料制成， Ti，Al，Mg，Ba，Ta，Bi，V，Ni，Th，Fe，La，Be，Sc和Co，选自由Ga，Si，Mg，Te，Hf组成的组中的至少一种元素的氮化物，Zr，Nb和B以及选自由Na，Mg，Li，Ba，Ca和K组成的组中的至少一种元素的卤化物。

23. 发明授权

US4429325A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4429325A
公开(公告)日：1984-01-31
申请号：US206780
申请日：1980-11-14
申请人： Yukio Takasaki , Tadaaki Hirai , Hideaki Yamamoto , Toshihisa Tsukada , Yoshiaki Mori
发明人： Yukio Takasaki , Tadaaki Hirai , Hideaki Yamamoto , Toshihisa Tsukada , Yoshiaki Mori
IPC分类号： H01L27/146 , H01L31/0264 , H04N5/335 , H04N5/359 , H04N5/361 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14665
摘要： In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.
摘要翻译：在具有金属电极的光电传感器中，覆盖在金属电极上的至少一个光电转换层和覆盖在光电转换层上的透明或部分透明导电层，在金属电极与金属电极之间配置复合层，光电转换层。通过配置复合层，其表面上具有绝缘氧化膜的金属电极可以像不存在绝缘氧化膜那样被处理。暗电流被抑制，光响应良好。作为复合层的材料，通常是Sb2S3，As2Se3，As2S3，Sb2Se3等。

24. 发明授权

US4323912A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4323912A
公开(公告)日：1982-04-06
申请号：US152690
申请日：1980-05-23
申请人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
发明人： Norio Koike , Toshihisa Tsukada , Haruhisa Ando , Hideaki Yamamoto , Tadaaki Hirai , Masaharu Kubo , Eiichi Maruyama , Toru Baji , Yukio Takasaki , Shusaku Nagahara
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14665
摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.
摘要翻译：在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上，设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

25. 发明授权

US4255686A Storage type photosensor containing silicon and hydrogen 失效
标题翻译：含硅和氢的存储型光电传感器
公开(公告)号：US4255686A
公开(公告)日：1981-03-10
申请号：US39580
申请日：1979-05-16
申请人： Eiichi Maruyama , Yoshinori Imamura , Saburo Ataka , Kiyohisa Inao , Yukio Takasaki , Toshihisa Tsukada , Tadaaki Hirai
发明人： Eiichi Maruyama , Yoshinori Imamura , Saburo Ataka , Kiyohisa Inao , Yukio Takasaki , Toshihisa Tsukada , Tadaaki Hirai
IPC分类号： H01J29/45 , H01L31/0248 , H01J31/38
CPC分类号： H01J29/45
摘要： In a photosensor having at least a light-transmitting conductive layer which is arranged on the side of light incidence, and a photoconductive layer in which charges are stored in correspondence with the light incidence; a photosensor characterized in that at least a region of said photoconductive layer for storing the charges is made of an amorphous material which contains hydrogen and silicon as indispensable constituent elements thereof, in which the silicon amounts to at least 50 atomic % and the hydrogen amounts to at least 10 atomic % and at most 50 atomic %, and whose resistivity is not lower than 10.sup.10 .OMEGA..multidot.cm.
摘要翻译：在具有布置在光入射侧的至少一个透光导电层的光电传感器中，以及与光入射相对应地存储电荷的光电导层; 一种光电传感器，其特征在于，用于存储电荷的所述光电导层的至少一个区域由含有氢和硅作为其不可缺少的构成元素的非晶材料制成，其中硅占至少50原子％，氢相当于至少10原子％且至多50原子％，并且其电阻率不低于1010欧米加×厘米2。

26. 发明授权

US07359215B2 Flexible display device 有权
标题翻译：灵活的显示设备
公开(公告)号：US07359215B2
公开(公告)日：2008-04-15
申请号：US10964667
申请日：2004-10-15
申请人： Takahiro Ochiai , Masahiro Tanaka , Toshiki Kaneko , Yukio Takasaki
发明人： Takahiro Ochiai , Masahiro Tanaka , Toshiki Kaneko , Yukio Takasaki
IPC分类号： H01R12/16
CPC分类号： G09G3/3233 , G09G3/3208 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2320/043 , H01L27/3244 , H01L27/3297 , H01L51/52 , H01L2227/326 , H01L2251/5338
摘要： A flexible display device includes: a flexible substrate which constitutes at least part of an envelope of the flexible display device; a plurality of pixels disposed on the flexible substrate; a group of terminals which is formed at a first portion on one surface of the flexible substrate and supplies signals to the plurality of pixels; and a reinforcing member attached to at least a second portion on another surface of the flexible substrate which faces the first portion across a thickness of the flexible substrate.
摘要翻译：柔性显示装置包括：构成柔性显示装置的外壳的至少一部分的柔性基板; 设置在柔性基板上的多个像素; 一组端子，其形成在所述柔性基板的一个表面上的第一部分处，并将信号提供给所述多个像素; 以及加强构件，其附接到柔性基板的在柔性基板的厚度上面向第一部分的另一表面上的至少第二部分。

27. 发明授权

US07009205B2 Image display device using transistors each having a polycrystalline semiconductor layer 有权
标题翻译：使用具有多晶半导体层的晶体管的图像显示装置
公开(公告)号：US07009205B2
公开(公告)日：2006-03-07
申请号：US10337370
申请日：2003-01-07
申请人： Jun Gotoh , Katsutoshi Saito , Makoto Ohkura , Yukio Takasaki , Masanao Yamamoto
发明人： Jun Gotoh , Katsutoshi Saito , Makoto Ohkura , Yukio Takasaki , Masanao Yamamoto
IPC分类号： H01L29/04
CPC分类号： H01L29/66757 , H01L29/458
摘要： An image display device using transistors each having a polycrystalline semiconductor layer constructed so that drain and source regions are fully activated, and a manufacturing method thereof. The polycrystalline semiconductor layer is so provided that impurity concentrations are easy to control in LDD regions . The image display device further uses transistors having a gate electrode on an upper surface of the semiconductor layer with an insulating film therebetween, a drain region formed on one side of the gate electrode, and a source region formed on another side of the gate electrode. An activated P-type impurity is added to the area underlying the gate electrode, and an activated N-type impurity is added to the area excluding the area underlying the gate electrode.
摘要翻译：一种使用晶体管的图像显示装置及其制造方法，所述晶体管具有构造为使得漏极和源极区域被完全激活的多晶半导体层。提供多晶半导体层，使得在LDD区域中容易控制杂质浓度。图像显示装置还在半导体层的上表面上具有栅电极的晶体管，其间具有绝缘膜，形成在栅电极的一侧上的漏极区域和形成在栅电极的另一侧上的源极区域。将激活的P型杂质添加到栅电极下方的区域，并且将活化的N型杂质添加到除栅电极下方的区域。

28. 发明授权

US4405935A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4405935A
公开(公告)日：1983-09-20
申请号：US227679
申请日：1981-01-23
申请人： Toru Baji , Norio Koike , Toshihisa Tsukada , Iwao Takemoto , Hideaki Yamamoto , Yukio Takasaki
发明人： Toru Baji , Norio Koike , Toshihisa Tsukada , Iwao Takemoto , Hideaki Yamamoto , Yukio Takasaki
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374 , H01L27/14
CPC分类号： H01L27/14672
摘要： Disclosed is a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for selecting positions of picture elements and scanners for turning "on" and "off" the switching elements in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected to one end of each of the switching elements, and a light transmitting electrode which is disposed on the photoconductive film, characterized at least in that a breakdown voltage of a junction formed between the semiconductor substrate and an impurity region which has a conductivity type opposite to that of the semiconductor substrate and which stores therein carriers attendant upon incidence of light is made smaller than a breakdown voltage between the storing first impurity region of said each switching element and a second impurity region thereof which forms a signal leading-out portion.
摘要翻译：公开了一种具有半导体集成电路的固态成像装置，其中用于选择用于按时间顺序将开关元件“接通”和“关闭”的图像元素和扫描器的位置的多个开关元件设置在相同的基板上，设置在所述集成电路上并连接到每个所述开关元件的一端的光电导膜和设置在所述光电导膜上的透光电极，其特征在于，至少形成在所述光电导膜之间形成的结的击穿电压，所述半导体衬底和具有与所述半导体衬底的导电类型相反的导电类型并且存储在入射时伴随的载流子的杂质区域被制成小于所述每个开关元件的所述存储第一杂质区域与所述第二开关元件的存储第一杂质区域之间的击穿电压其形成信号导出部分的杂质区域。

29. 发明授权

US09287587B2 Sealed battery cell and manufacturing method thereof 有权
标题翻译：密封电池及其制造方法
公开(公告)号：US09287587B2
公开(公告)日：2016-03-15
申请号：US13012528
申请日：2011-01-24
申请人： Katsunori Suzuki , Yukio Takasaki , Sho Matsumoto
发明人： Katsunori Suzuki , Yukio Takasaki , Sho Matsumoto
IPC分类号： H01M2/12 , H01M10/0587 , H01M10/052
CPC分类号： H01M10/0587 , H01M2/1241 , H01M2/1247 , H01M10/052 , Y02E60/122 , Y02P70/54 , Y02T10/7011 , Y10T29/4911
摘要： A sealed battery cell including an anti-explosion mechanism disposed between an electrode group and a top cover, and that deforms or cleaves due to elevation of internal pressure in the battery cell, the electrode group being comprised of a positive electrode and a negative electrode that are laminated together; wherein the anti-explosion mechanism includes a diaphragm, a connection plate welded to the diaphragm, and a connection lead welded to the connection plate; and the connection plate includes a thinner portion where a spot at which the connection lead is connected is formed as thin, and a thicker portion where the thinner portion is not formed, and a lower surface of the thinner portion is formed as coincident with a lower surface of the thicker portion, or as hollowed out from the lower surface of the thicker portion.
摘要翻译：一种密封的电池单元，包括设置在电极组和顶盖之间的防爆机构，并且由于电池单元内部压力升高而变形或断裂，所述电极组由正极和负极构成，层压在一起; 其中所述防爆机构包括隔膜，焊接到所述隔膜的连接板和焊接到所述连接板的连接引线; 并且连接板包括较薄部分，其中连接引线连接的点形成为较薄部分，较薄部分形成较薄部分，并且较薄部分的下表面形成为与较低部分重合较厚部分的表面，或从较厚部分的下表面挖出。

30. 发明申请

US20080272685A1 Dispay unit 审中-公开
标题翻译：分配单位
公开(公告)号：US20080272685A1
公开(公告)日：2008-11-06
申请号：US12081738
申请日：2008-04-21
申请人： Mitsuharu Ikeda , Toshiaki Kusunoki , Etsuko Nishimura , Tatsumi Hirano , Masatomo Terakado , Takahiro Ueno , Hiroyasu Yanase , Yukio Takasaki , Takaaki Ogasa , Hideyuki Shintani
发明人： Mitsuharu Ikeda , Toshiaki Kusunoki , Etsuko Nishimura , Tatsumi Hirano , Masatomo Terakado , Takahiro Ueno , Hiroyasu Yanase , Yukio Takasaki , Takaaki Ogasa , Hideyuki Shintani
IPC分类号： H01J1/54 , H05K1/09
CPC分类号： G02F1/136286 , G02F2001/13629
摘要： Hillock is prevented when aluminum wiring is used in order to reduce line resistance in a display unit. The aluminum wiring is formed into multi-layer structure and each layer contains an element which is not solidly solubilized with aluminum. The element are preferably rare earth metal such as Nd, high-melting point transition metals such as Ta and noble metals such as Pd. Intermetallic compounds of aluminum and the element are educed at an interface of the multi-layer wiring and it is prevented that grains of aluminum are enlarged to form hillock.
摘要翻译：为了减少显示单元中的线路电阻，使用铝接线时会阻止小丘。铝布线形成多层结构，每一层都含有不能用铝固溶的元素。该元素优选为稀土金属如Nd，高熔点过渡金属如Ta和贵金属如Pd。铝和元素的金属间化合物在多层布线的界面处被引出，并且防止铝的晶粒扩大以形成小丘。

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