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21. 发明申请

US20120012252A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120012252A1
公开(公告)日：2012-01-19
申请号：US12856863
申请日：2010-08-16
申请人： Hironori Kusumoto , Hideki Kihara , Tsutomu Nakamura , Hidenobu Tanimura , Yuuya Mizobe
发明人： Hironori Kusumoto , Hideki Kihara , Tsutomu Nakamura , Hidenobu Tanimura , Yuuya Mizobe
IPC分类号： H01L21/465
CPC分类号： H01J37/321 , H01J37/3266 , H01J37/32816
摘要： A plasma processing apparatus capable of detecting sealing abnormality of each gate is disclosed. This apparatus includes an outer chamber constituting a vacuum vessel, an inner chamber disposed within the outer chamber for permitting a plasma to be formed in a vacuumed processing chamber as internally provided therein, a workpiece table below the processing chamber for holding thereon a wafer to be processed, a first gate valve disposed in a sidewall of the inner chamber for driving a gate to open and close while the wafer is transferred therethrough, and a second gate valve disposed in a sidewall of the outer chamber for opening and closing a gate while the wafer is transferred therethrough. After the wafer is put on the table, a pressure variation of an intermediate room formed between the inner and outer chambers sealed by the gate valves closed, thereby detecting a decrease in sealing performance.
摘要翻译：公开了能够检测每个门的密封异常的等离子体处理装置。该装置包括构成真空容器的外室，设置在外室内的内室，用于允许在内部设置的真空处理室内形成等离子体;在处理室下面的用于保持晶片的工件台处理的第一闸阀，设置在内室的侧壁中，用于在晶片被转移通过时驱动门打开和关闭;以及第二闸阀，设置在外室的侧壁中，用于打开和关闭闸门，同时晶片转移通过。在将晶片放在工作台上之后，在由闸阀密封的内室和外室之间形成的中间室的压力变化关闭，从而检测密封性能的降低。

22. 发明授权

US07828928B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07828928B2
公开(公告)日：2010-11-09
申请号：US12199876
申请日：2008-08-28
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.
摘要翻译：一种真空处理装置，其特征在于，包括真空容器的外部室，产生用于处理晶片的等离子体的内部室，可拆卸地设置在所述外部室内部的内室，所述晶片所在的晶片保持架为并且设置在所述晶片保持器的下方排出所述内室的内部的排气装置。相对于内室和外室之间的空间，内室以气密方式密封，同时空间保持在真空压力。

23. 发明申请

US20090000739A1 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US20090000739A1
公开(公告)日：2009-01-01
申请号：US12230459
申请日：2008-08-29
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： H01L21/306
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and amass flow controller unit interposed between two processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理; 并且插入在两个处理室之间的流量控制器单元，用于向腔室供应气体。

24. 发明申请

US20080317581A1 Vacuum Processing Apparatus 有权
标题翻译：真空处理设备
公开(公告)号：US20080317581A1
公开(公告)日：2008-12-25
申请号：US12199876
申请日：2008-08-28
申请人： Akitaka MAKINO , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka MAKINO , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： H01L21/203
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.
摘要翻译：一种真空处理装置，其特征在于，包括真空容器的外部室，产生用于处理晶片的等离子体的内部室，可拆卸地设置在所述外部室内部的内室，所述晶片所在的晶片保持架为并且设置在所述晶片保持器的下方排出所述内室的内部的排气装置。相对于内室和外室之间的空间，内室以气密方式密封，同时空间保持在真空压力。

25. 发明申请

US20080011425A1 Plasma Processing Apparatus And Method 审中-公开
标题翻译：等离子体处理装置及方法
公开(公告)号：US20080011425A1
公开(公告)日：2008-01-17
申请号：US11779396
申请日：2007-07-18
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： C23F1/00
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.
摘要翻译：等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。环形构件向上延伸以覆盖钟罩的内表面的一部分。

26. 发明申请

US20060237391A1 Vacuum processing apparatus and vacuum processing method of sample 审中-公开
标题翻译：真空加工设备和真空加工方法的样品
公开(公告)号：US20060237391A1
公开(公告)日：2006-10-26
申请号：US11213736
申请日：2005-08-30
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： B44C1/22 , H01L21/306 , H01L21/461 , C23F1/00
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： Provided is a vacuum processing apparatus or processing method which, when films of a plurality of layers are etched into a predetermined shape, eliminates a deficiency in shape formed by sample processing, increases the aspect ratio of the processed shape, and provides a more precise shape. The vacuum processing apparatus of the present invention comprises a vacuum container the inside of which can be depressurized and a sample holder located inside of the vacuum container to place thereon a sample to be processed; is used for etching, into a predetermined shape, films of a plurality of layers laid over the sample surface with plasma formed using an electric field and a processing gas fed in a space above the sample holder inside of the vacuum container; and is equipped with a heat conducting gas feed means for feeding a heat conducting gas between a sample mounting surface and the backside of the sample, wherein the apparatus is equipped further with a heat-conducting-gas pressure control function for changing stepwise the pressure of the heat conducting gas fed between the sample mounting surface and the backside of the sample in accordance with the progress of the processing of the films of a plurality of layers of the sample.
摘要翻译：提供一种真空处理装置或处理方法，当多层的膜被蚀刻成预定形状时，消除由样品处理形成的形状不足，增加加工形状的纵横比，并提供更精确的形状。本发明的真空处理装置包括一个其内部可被减压的真空容器和一个位于真空容器内部的样品架，放置在待处理样品上; 用于将采用电场形成的等离子体放置在样品表面上的多层的薄膜和在真空容器内的样品架上方的空间内供给的处理气体进行蚀刻，形成预定的形状; 并且配备有用于在样品安装表面和样品的背面之间供给导热气体的导热气体供给装置，其中该装置还具有用于逐步改变样品的压力的导热气体压力控制功能导热气体根据样品的多个层的膜的处理进程而在样品安装表面和样品的背面之间供给。

27. 发明申请

US20060054278A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20060054278A1
公开(公告)日：2006-03-16
申请号：US11065561
申请日：2005-02-25
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi , Minoru Yatomi , Nobuo Nagayasu
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi , Minoru Yatomi , Nobuo Nagayasu
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67248 , H01J37/32522 , H01L21/6719 , H01L21/67196
摘要： The present invention provides a plasma processing apparatus for processing a sample on a sample stand in a vacuum container whose inside pressure is reduced, with a plasma generated in an upper space above the sample stand. The apparatus comprises: an electric discharge chamber disposed in the vacuum container and above the sample stand, and having a discharge-chamber sidewall surrounding the upper space; a vacuum chamber disposed in the vacuum container and below the electric discharge chamber, and in communication with the electric discharge chamber; a vacuum-chamber sidewall disposed inside the vacuum container to surround the sample stand, and constituting a side surface of the vacuum chamber; a first temperature regulator disposed outside the discharge-chamber sidewall to adjust a temperature of the discharge-chamber sidewall; and a second temperature regulator controlling a temperature of the vacuum-chamber sidewall to a value lower than the temperature of the discharge-chamber sidewall.
摘要翻译：本发明提供了一种等离子体处理装置，用于在样品台上的上部空间中产生的等离子体，在样品台上处理内部压力降低的真空容器中的样品。该设备包括：放电室，设置在真空容器中并在样品台上方，并具有围绕上部空间的放电室侧壁; 真空室，设置在所述真空容器中并位于所述放电室的下方，并与所述放电室连通; 设置在所述真空容器内部以包围所述样品台的真空室侧壁，并构成所述真空室的侧面; 第一温度调节器，其布置在所述放电室侧壁外侧，以调节所述放电室侧壁的温度; 以及将所述真空室侧壁的温度控制在比所述排出室侧壁的温度低的值的第二温度调节器。

28. 发明授权

US06825617B2 Semiconductor processing apparatus 失效
标题翻译：半导体处理装置
公开(公告)号：US06825617B2
公开(公告)日：2004-11-30
申请号：US10373711
申请日：2003-02-27
申请人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
发明人： Seiichiro Kanno , Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Hideki Kihara , Hideyuki Yamamoto
IPC分类号： H01J724
CPC分类号： H01L21/67253 , H01J37/32082 , H01J37/3299 , H01J2237/334 , H01L21/67069 , H01L21/67248
摘要： A semiconductor processing apparatus that processes a semiconductor wafer disposed in a process chamber of a processing apparatus main unit includes a setting unit for enabling a user to set a temperature of the semiconductor wafer and control unit for controlling a processing of the semiconductor wafer based on the temperature of the semiconductor wafer set by the setting unit.
摘要翻译：处理设置在处理设备主单元的处理室中的半导体晶片的半导体处理设备包括：设置单元，用于使用户能够设置用于控制半导体晶片的处理的半导体晶片和控制单元的温度，由设置单元设置的半导体晶片的温度。

29. 发明申请

US20130053997A1 VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20130053997A1
公开(公告)日：2013-02-28
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： B25J9/10 , B25J13/08
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

30. 发明授权

US07976632B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07976632B2
公开(公告)日：2011-07-12
申请号：US12034837
申请日：2008-02-21
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , C23C16/00 , H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理;以及质量流量控制单元，用于向腔室供应气体的处理室。

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