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21. 发明授权

US4107571A Light emitting device having luminescent screen with self activated blue light emitting phosphor 失效
标题翻译：具有自激活蓝光发光荧光体的荧光屏的发光装置
公开(公告)号：US4107571A
公开(公告)日：1978-08-15
申请号：US516953
申请日：1974-10-22
申请人： Shinkichi Tanimizu , Teruki Suzuki , Tadashi Fukuzawa
发明人： Shinkichi Tanimizu , Teruki Suzuki , Tadashi Fukuzawa
IPC分类号： C09K11/77 , H01J61/16 , H01J61/44
CPC分类号： C09K11/7795 , C09K11/7794
摘要： A light emitting device wherein a blue screen or a red screen is excited by 5 to 25eV photons or electrons, the blue screen containing a self-activated phosphor which is represented by the general formula MP.sub.b V.sub.1-b O.sub.4 where M stands for at least one member selected from the group consisting of yttrium (Y), scandium (Sc), rare-earth elements having atomic numbers of 57 - 62 and 64 - 71, and group-IIIb elements of the periodic table, and where 0
摘要翻译：一种发光器件，其中蓝色屏幕或红色屏幕被5至25eV的光子或电子激发，蓝色屏幕包含由通式MPbV1-bO4表示的自激活荧光粉，其中M代表所选择的至少一个成员从由钇（Y），钪（Sc），原子序数为57〜62和64〜71的稀土元素和周期表的IIIb族元素组成的组中，0

22. 发明授权

US07489840B2 Optical link module, optical interconnection method, information processor including the optical link module, signal transfer method, prism and method of manufacturing the prism 失效
标题翻译：光链路模块，光互连方式，信息处理器包括光链路模块，信号传输方法，棱镜及棱镜制造方法
公开(公告)号：US07489840B2
公开(公告)日：2009-02-10
申请号：US11151890
申请日：2005-06-13
申请人： Kazuo Sekiya , Tadashi Fukuzawa
发明人： Kazuo Sekiya , Tadashi Fukuzawa
IPC分类号： G02B5/30 , G02B27/28 , G02B6/34 , H04J14/02
CPC分类号： G02B6/4209 , G02B6/32 , G02B6/3885 , G02B6/4214 , G02B6/4249 , G02B6/4292 , G02B6/43
摘要： An optical link module of the present invention for connecting light beams by deflection and including light-emitting devices arranged in a planar manner; an optical fiber bundle that is an optical waveguide for receiving the light beams from the light-emitting devices, and an optical turn which includes a plurality of aspherical lenses which are disposed between the light-emitting devices and the optical fiber bundle and are formed while corresponding to the number of the light-emitting devices and the number of optical fibers.
摘要翻译：本发明的用于通过偏转连接光束并包括以平面方式布置的发光器件的光连杆模块; 作为用于接收来自发光装置的光束的光波导的光纤束，以及包括设置在发光元件与光纤束之间的多个非球面透镜的光学转向，并且形成为同时对应于发光装置的数量和光纤的数量。

23. 发明授权

US5547705A Nonlinear optical device and method of manufacturing same 失效
标题翻译：非线性光学器件及其制造方法
公开(公告)号：US5547705A
公开(公告)日：1996-08-20
申请号：US939965
申请日：1992-09-04
申请人： Tadashi Fukuzawa , Satoru S. Kano , Kiyoshi Kumata , Victor Y. Lee , Franklin M. Schellenberg , Yutaka Takahashi
发明人： Tadashi Fukuzawa , Satoru S. Kano , Kiyoshi Kumata , Victor Y. Lee , Franklin M. Schellenberg , Yutaka Takahashi
IPC分类号： G02F1/35 , G02F1/355 , G02F3/02 , B05D5/06
CPC分类号： B82Y20/00 , G02F1/3556
摘要： A nonlinear optical device comprising a substrate and a film structure coated on to the substrate. The film has, in a direction normal to the substrate, an intercalation structure including a semiconductor layer and an organic layer that lave different energy gaps. The intercalation structure includes a plurality of semiconductor layers and a plurality of organic layers which comprise a quantum well system. The film structure includes an assembly of microcrystals having domain size smaller than that of the wavelength of light with which the device operates. The microcrystals have an axis aligned in a direction normal to the substrate and have randomly oriented axes in a direction parallel to the substrate. A method for producing the device comprises providing a solution of an organic material in a solvent and placing a quantity of the solution on a substrate to form the organic material film structure thereon. The film is formed by spin coating of the solution on the substrate. Preferably the film is comprised of a two-dimensional perovskite such as (C.sub.10 H.sub.21 NH.sub.3).sub.2 PbI.sub.4. The solvent is acetone or dimethoxyl ethane.
摘要翻译：一种非线性光学器件，包括涂覆在基底上的基底和薄膜结构。该膜在与基板垂直的方向上具有包含半导体层和具有不同能隙的有机层的嵌入结构。嵌入结构包括多个半导体层和包括量子阱系统的多个有机层。膜结构包括具有比器件工作的光的波长小的畴尺寸的微晶组合。微晶具有在垂直于衬底的方向上对齐的轴线，并且在平行于衬底的方向上具有随机取向的轴。一种制造该装置的方法包括：将有机材料溶于溶剂中并将一定量的溶液放置在基材上以在其上形成有机材料膜结构。该膜通过将溶液旋涂在基材上而形成。优选地，该膜由诸如（C10H21NH3）2PbI4的二维钙钛矿组成。溶剂是丙酮或二甲氧基乙烷。

24. 发明授权

US5475488A Head flying height measuring apparatus 失效
标题翻译：头部飞行高度测量仪
公开(公告)号：US5475488A
公开(公告)日：1995-12-12
申请号：US148100
申请日：1993-11-05
申请人： Tadashi Fukuzawa , Teiji Hisano , Kohichi Ikarugi , Tetsuji Morita , Kohki Noda
发明人： Tadashi Fukuzawa , Teiji Hisano , Kohichi Ikarugi , Tetsuji Morita , Kohki Noda
IPC分类号： G01B9/02 , G01B11/14 , G01D1/02 , G11B21/21
CPC分类号： G01B11/14 , G01B9/02007 , G11B5/455 , G11B5/6052 , G01B2290/25
摘要： A high-sensitivity apparatus having simple constitution that measures the flying height of a magnetic head. Light emitted from a white light source 25 is directed to the gap between a disk 23 and a head 21, and subjected to multiple reflection between the disk 23 and the head 21. Reflected light from an opaque object, which may be either the disk 23 or the head 21, is divided into at least three components having respective wavelength regions which are directed to different photodetectors 35, 36, and 37 for the respective wavelength regions. An estimation device 38 estimates the flying height of the head according to the least-square method from the outputs of the photodetectors using functions prepared in advance for the respective wavelength regions, and correlates the disk-head gap and the reflected light intensities detected by the respective photodetectors. Real-time calculation according to the least-square method is performed by means of a table look-up technique or a tracking servo technique.
摘要翻译：具有测量磁头的飞行高度的简单结构的高灵敏度装置。从白光源25发射的光被引导到盘23和头21之间的间隙，并且在盘23和头21之间经受多次反射。来自不透明物体的反射光可以是盘23 或头21被分成至少三个分量，其中各个波长区域被引导到各个波长区域的不同的光电探测器35,36和37。估计装置38使用对于各个波长区域预先准备的功能，根据最小二乘法估计头部的飞行高度与光电检测器的输出之间的关系，并且将磁头间隙和由各个光电探测器。根据最小二乘法的实时计算是通过表查找技术或跟踪伺服技术进行的。

25. 发明授权

US4933728A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US4933728A
公开(公告)日：1990-06-12
申请号：US309929
申请日：1989-02-13
申请人： Tadashi Fukuzawa , Eizaburo Yamada , Kenji Hiruma , Hiroyoshi Matsumura
发明人： Tadashi Fukuzawa , Eizaburo Yamada , Kenji Hiruma , Hiroyoshi Matsumura
IPC分类号： H01S5/00 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/34
摘要： A semiconductor optical device in which a hetero-structure is constructed by sandwiching a semiconductor layer including a thin film made of a semiconductor or insulator between semiconductors having a larger band gap than that of the thin film so that the electron-hole pairs generated through the thin film may recombine by the tunnel effect to emit an optical beam. The optical device is equipped with electrodes for controlling the probability of said recombination.
摘要翻译：一种半导体光学器件，其中通过将包括由半导体或绝缘体制成的薄膜的半导体层夹在具有比薄膜的带隙更大的带隙的半导体之间构成异构体，使得通过薄膜可以通过隧道效应重新组合以发射光束。光学装置配备有用于控制所述重组的概率的电极。

26. 发明授权

US4847573A Optical modulator 失效
标题翻译：光调制器
公开(公告)号：US4847573A
公开(公告)日：1989-07-11
申请号：US860412
申请日：1986-05-07
申请人： Tadashi Fukuzawa , Eizaburo Yamada , Kenji Hiruma , Hiroyoshi Matsumura
发明人： Tadashi Fukuzawa , Eizaburo Yamada , Kenji Hiruma , Hiroyoshi Matsumura
IPC分类号： G02F1/015 , G02F1/017
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01708 , G02F2001/0157
摘要： An optical modulator which utilizes the Stark effect according to which the absorption spectra change if an electric field is applied to the excitons. A thin film of a suitable thickness composed of a semiconductor and an insulator or composed of either one of them, is formed between a group of electrons and a group of positive holes that constitute excitons, so that the excitons are stabilized. The optical modulator performs the modulation at high speeds maintaining a high efficiency.
摘要翻译：利用斯塔克效应的光学调制器，如果对激子施加电场，则吸收光谱发生变化。在一组电子和一组构成激子的正空穴之间形成由半导体和绝缘体组成的合适厚度的薄膜，或者由它们中的任意一个构成的薄膜，使得激子稳定。光调制器以高速执行调制，保持高效率。

27. 发明授权

US4783425A Fabrication process of semiconductor lasers 失效
标题翻译：半导体激光器的制造工艺
公开(公告)号：US4783425A
公开(公告)日：1988-11-08
申请号：US924774
申请日：1986-10-30
申请人： Tadashi Fukuzawa , Yuichi Ono , Shinichi Nakatsuka , Takashi Kajimura
发明人： Tadashi Fukuzawa , Yuichi Ono , Shinichi Nakatsuka , Takashi Kajimura
IPC分类号： H01L33/00 , H01S5/20 , H01S5/223 , H01S5/323 , H01S5/34 , H01L21/205 , H01L21/225 , H01L21/265
CPC分类号： B82Y20/00 , H01L33/0062 , H01S5/2231 , H01S5/34 , H01S5/2081 , H01S5/32316
摘要： A p-GaAlAs cladding layer is exposed to the air if a groove of the form of a stripe is formed by chemical etching in an n-GaAs layer that serves as a current confinement layer on the p-GaAlAs cladding layer, the groove being so formed as to reach the cladding layer. The GaAlAs is oxidized so easily that an unstable degradation layer is formed on the surface thereof. To solve this problem according to the prior art, an undoped GaAs layer that serves as a cover layer is formed on the p-GaAlAs cladding layer, the n-GaAs layer is formed, and the etching is effected so that the undoped GaAs layer is simply exposed. The undoped GaAs layer is then heated in the MBE apparatus while being irradiated with the As molecular beam and is thermally etched. Therefore, the cladding layer is exposed in vacuum and the p-GaAlAs layer is formed thereon. However, this method is not suited for mass-production since the thermal etching is unstable and it needs the MBE apparatus of a very high degree of vacuum. Quality of the crystal decreases, too, due to the heating. This invention therefore provides a fabrication process of semiconductor lasers in which the cover layer disappears due to interdiffusion of constituent elements that stem from the diffusion of impurities such as zinc ions in the undoped GaAs layer.
摘要翻译：如果通过在p-GaAlAs包层上作为电流限制层的n-GaAs层中的化学蚀刻形成条纹形式的沟槽，则p-GaAlAs包层暴露于空气中，凹槽为形成为到达包层。 GaAlAs容易氧化，从而在其表面上形成不稳定的降解层。为了解决现有技术的问题，在p-GaAlAs包层上形成作为覆盖层的未掺杂的GaAs层，形成n-GaAs层，进行蚀刻，使未掺杂的GaAs层为简单暴露。然后在MBE装置中加热未掺杂的GaAs层，同时用As分子束照射并进行热蚀刻。因此，在真空中露出包覆层，在其上形成p-GaAlAs层。然而，该方法不适于批量生产，因为热蚀刻不稳定，并且需要非常高真空度的MBE装置。由于加热，晶体的质量也降低。因此，本发明提供一种半导体激光器的制造工艺，其中由于在未掺杂的GaAs层中的诸如锌离子的杂质的扩散而导致的构成元素的相互扩散，覆盖层消失。

28. 发明授权

US4772925A High speed switching field effect transistor 失效
标题翻译：高速开关场效应晶体管
公开(公告)号：US4772925A
公开(公告)日：1988-09-20
申请号：US935171
申请日：1986-11-26
申请人： Tadashi Fukuzawa , Ken Yamaguchi , Susumu Takahashi , Hisao Nakashima , Michiharu Nakamura
发明人： Tadashi Fukuzawa , Ken Yamaguchi , Susumu Takahashi , Hisao Nakashima , Michiharu Nakamura
IPC分类号： H01L29/80 , H01L21/331 , H01L21/338 , H01L29/10 , H01L29/73 , H01L29/778 , H01L29/812 , H01L27/12 , H01L29/161 , H01L29/205
CPC分类号： H01L29/7783 , H01L29/1075
摘要： The semiconductor device of this invention consists at least of a laminate of a semi-insulating or p-type first semiconductor layer having a forbidden band width E.sub.g1, an undoped or p.sup.- -type second semiconductor layer having a forbidden band width E.sub.g2 and an n-type third semiconductor layer having forbidden band width E.sub.g3. The laminate is deposited on a predetermined semiconductor substrate and the forbidden band width has the relation E.sub.g2
摘要翻译：本发明的半导体器件至少包括具有禁带宽度Eg1的半绝缘或p型第一半导体层的层压体，具有禁带宽度Eg2的未掺杂或p型第二半导体层，以及n 具有禁带宽度Eg3的第三半导体层。层压体沉积在预定的半导体衬底上，禁带宽度具有关系Eg2

29. 发明授权

US4430741A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4430741A
公开(公告)日：1984-02-07
申请号：US225399
申请日：1981-01-15
申请人： Tadashi Fukuzawa , Michiharu Nakamura , Susumu Takahashi
发明人： Tadashi Fukuzawa , Michiharu Nakamura , Susumu Takahashi
IPC分类号： H01S5/00 , H01L27/15 , H01S5/026 , H01S5/06 , H01S5/062 , H01S5/227 , H01S3/19
CPC分类号： H01S5/06203 , H01L27/15 , H01S5/227 , H01S5/0622 , H01S5/2275
摘要： Disclosed is a semiconductor laser device comprising a semiconductor assembly which serves to effect laser oscillation and in which first, second and third semiconductor layers are successively stacked on a predetermined semiconductor body, at least the first and third semiconductor layers being small in the refractive index relative to the second semiconductor layer and great in the forbidden band gap relative thereto and having conductivity types opposite to each other, and means to spread depletion regions within at least a part of a current path for effecting the laser oscillation and in a manner to intersect with the current path. A small-sized semiconductor laser device capable of fast modulation can be realized.
摘要翻译：公开了一种半导体激光器件，其包括用于实现激光振荡的半导体组件，并且其中第一，第二和第三半导体层被连续堆叠在预定半导体本体上，至少第一和第三半导体层的折射率相对较小并且相对于第二半导体层具有大的禁带宽度，并且具有彼此相反的导电类型，以及在电流路径的至少一部分内扩散耗尽区以实现激光振荡并以与当前路径。能够实现能够进行快速调制的小型半导体激光装置。

30. 发明授权

US4361887A Semiconductor light emitting element 失效
标题翻译：半导体发光元件
公开(公告)号：US4361887A
公开(公告)日：1982-11-30
申请号：US125779
申请日：1980-02-29
申请人： Michiharu Nakamura , Motohisa Hirao , Shigeo Yamashita , Tadashi Fukuzawa , Junichi Umeda
发明人： Michiharu Nakamura , Motohisa Hirao , Shigeo Yamashita , Tadashi Fukuzawa , Junichi Umeda
IPC分类号： H01L29/80 , H01L21/338 , H01L27/095 , H01L27/15 , H01L29/812 , H01S5/00 , H01S5/026 , H01S5/042 , H01S3/19
CPC分类号： H01S5/0265
摘要： A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a means for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A means is formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injection means is short-circuited with the first electrode of the field transistor section and a means is formed on the substrate for receiving the current injected from the current injecting means.
摘要翻译：半导体激光发光元件包括半导体衬底，半导体层的层叠区域，其至少形成在衬底上并具有限定在其中的p-n结的第一，第二和第三半导体层。第一和第三半导体层具有比第二半导体层更小的折射率和更大的禁带宽度，并且与导电类型相反。在基板上设置有具有第一和第二电极的场效应晶体管部分和设置在第一和第二电极之间的栅电极，用作用于在p-n结的长度方向上发光的光谐振器的装置。在层叠区域的一个表面上形成用于将电流注入到第三半导体层中的装置，电流注入装置与场晶体管部分的第一电极短路，并且在基板上形成用于接收注入电流的装置从目前的注射手段。

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