专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20100140077A1 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 有权
标题翻译：激光注射用于离子植入控制
公开(公告)号：US20100140077A1
公开(公告)日：2010-06-10
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： B01J19/08 , C23C16/513
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

22. 发明申请

US20070262271A1 Ribbon beam ion implanter cluster tool 有权
标题翻译：丝带束离子注入机群集工具
公开(公告)号：US20070262271A1
公开(公告)日：2007-11-15
申请号：US11432977
申请日：2006-05-12
申请人： Joseph Ferrara , Patrick Splinter , Michael Graf , Victor Benveniste
发明人： Joseph Ferrara , Patrick Splinter , Michael Graf , Victor Benveniste
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/16 , H01J2237/0822 , H01J2237/20 , H01J2237/244 , H01L21/26513 , H01L21/26566 , H01L21/67213
摘要： An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.
摘要翻译：提供了用于将离子注入到工件中的离子注入簇工具，其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。多个离子束线组件中的每一个与公共处理室选择性地隔离，并且多个束线在处理室的处理区域相交。定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个，并且公共处理室内的常见剂量测量装置可操作以测量一个或更多的多个离子束线中的每一个的性质。负载锁定室可操作地联接到公共处理室，用于在公共处理室和外部环境之间交换工件。

23. 发明授权

US07151658B2 High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer 有权
标题翻译：高性能静电夹具包括电阻层，微沟槽和电介质层
公开(公告)号：US07151658B2
公开(公告)日：2006-12-19
申请号：US10420329
申请日：2003-04-22
申请人： Peter L. Kellerman , Victor Benveniste , Michel Pharand , Dale K. Stone
发明人： Peter L. Kellerman , Victor Benveniste , Michel Pharand , Dale K. Stone
IPC分类号： H02N13/00
CPC分类号： H01L21/6833 , H02N13/00
摘要： An electrostatic clamp for securing a semiconductor wafer during processing. The electrostatic clamp includes a base member, a first dielectric layer, a second dielectric layer having a gas pressure distribution micro-groove network formed therein, a gas gap positioned between a backside of a semiconductor wafer and the second dielectric layer, and a pair of high voltage electrodes positioned between the first dielectric layer and the second dielectric layer.
摘要翻译：一种用于在加工过程中固定半导体晶片的静电夹。静电夹具包括：基座部件，第一电介质层，形成有气体压力分布微槽网络的第二电介质层，位于半导体晶片的背面和第二电介质层之间的气隙，以及一对位于第一介电层和第二介电层之间的高压电极。

24. 发明申请

US20050242293A1 Mounting mechanism for plasma extraction aperture 审中-公开
标题翻译：等离子体提取孔的安装机构
公开(公告)号：US20050242293A1
公开(公告)日：2005-11-03
申请号：US10395720
申请日：2003-01-07
申请人： Victor Benveniste
发明人： Victor Benveniste
IPC分类号： H01J37/08 , H01J3/14
CPC分类号： H01J37/08 , H01J2237/31701
摘要： An improved electrode subassembly for an ion implanter is provided. The subassembly comprises (i) a first generally planar electrode residing in a first plane and having a first aperture; (ii) a second generally planar electrode residing in a second plane generally parallel to the first plane and having a second aperture aligned with the first aperture; and (iii) a pair of connecting rods connecting the first generally planar electrode to the second generally planar electrode. The connecting rods permit generally parallel and slidable movement of the second generally planar electrode with respect to the first generally planar electrode. The connecting rods are positioned in a non-parallel relationship to each other, so that the first and second electrodes when undergoing thermal expansion slide with respect to each other upon the non-parallel connecting rods, to increase or decrease a distance therebetween, while maintaining a parallel relationship.
摘要翻译：提供了用于离子注入机的改进的电极子组件。子组件包括（i）驻留在第一平面中并具有第一孔的第一大致平面的电极; （ii）位于大致平行于第一平面并具有与第一孔对准的第二孔的第二平面中的第二大体平面电极; 和（iii）将第一大致平面的电极连接到第二大致平面的电极的一对连接杆。连接杆允许第二大体上平面的电极相对于第一大致平面的电极大致平行且可滑动地移动。连接杆以不平行的关系定位，使得第一和第二电极在经历热膨胀时在非平行的连接杆上相对于彼此滑动，以增加或减少它们之间的距离，同时保持一个平行的关系。

25. 发明授权

US08501624B2 Excited gas injection for ion implant control 有权
标题翻译：激发气体注入用于离子注入控制
公开(公告)号：US08501624B2
公开(公告)日：2013-08-06
申请号：US12328096
申请日：2008-12-04
申请人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
发明人： Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了一种利用离子源和/或原子气体注入的离子源。在离子束施加中，源气体可以直接使用，如通常提供的。或者或另外，源气体可以在被引入离子源室之前通过将其通过远程等离子体源来改变。这可以用于产生兴奋的中性粒子，重离子，亚稳分子或多电荷离子。在另一个实施例中，使用多个气体，其中一个或多个气体通过远程等离子体发生器。在某些实施方案中，气体在被提供给离子源室之前组合在单个等离子体发生器中。在等离子体浸渍应用中，通过一个或多个另外的气体注入位置将等离子体注入到处理室中。这些注入位置允许通过处理室外部的远程等离子体源产生的附加等离子体的流入。

26. 发明授权

US08436318B2 Apparatus for controlling the temperature of an RF ion source window 失效
标题翻译：用于控制RF离子源窗口的温度的装置
公开(公告)号：US08436318B2
公开(公告)日：2013-05-07
申请号：US12754258
申请日：2010-04-05
申请人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
发明人： Frank Sinclair , Costel Biloiu , Bon-Woong Koo , Victor Benveniste , Shardul Patel
IPC分类号： H01J27/00
CPC分类号： H01J37/32495 , H01J27/16 , H01J37/08 , H01J37/3171 , H01J37/321 , H01J37/32412 , H01J37/32422 , H01J37/32522 , H01J2237/022 , H01J2237/0266 , H01J2237/0817
摘要： An RF ion source utilizing a heating/RF-shielding element for controlling the temperature of an RF window and to act as an RF shielding element for the RF ion source. When the heating/RF shielding element is in a heating mode, it suppresses formation of unwanted deposits on the RF window which negatively impacts the transfer of RF energy from an RF antenna to a plasma chamber. When the heating/RF-shielding element is in a shielding mode, it provides an electrostatic shielding for the RF ion source.
摘要翻译： RF离子源，其利用加热/ RF屏蔽元件来控制RF窗口的温度并用作RF离子源的RF屏蔽元件。当加热/ RF屏蔽元件处于加热模式时，它抑制在RF窗口上形成不需要的沉积物，这对RF能量从RF天线到等离子体室的转移产生负面影响。当加热/ RF屏蔽元件处于屏蔽模式时，它为RF离子源提供静电屏蔽。

27. 发明授权

US08183542B2 Temperature controlled ion source 有权
标题翻译：温度控制离子源
公开(公告)号：US08183542B2
公开(公告)日：2012-05-22
申请号：US12754318
申请日：2010-04-05
申请人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
发明人： Victor Benveniste , Bon-Woong Koo , Shardul Patel , Frank Sinclair
IPC分类号： G21K5/10
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/002
摘要： An ion source is provided that utilizes a cooling plate and a gap interface to control the temperature of an ion source chamber. The gap interface is defined between the cooling plate and a wall of the chamber. A coolant gas is supplied to the interface at a given pressure where the pressure determines thermal conductivity from the cooling plate to the chamber to control the temperature of the interior of the chamber.
摘要翻译：提供了一种利用冷却板和间隙界面来控制离子源室的温度的离子源。间隙界面限定在冷却板和腔室的壁之间。在给定压力下将冷却剂气体供应到界面，其中压力确定从冷却板到室的导热性，以控制室内部的温度。

28. 发明授权

US07807983B2 Technique for reducing magnetic fields at an implant location 有权
标题翻译：减少植入位置磁场的技术
公开(公告)号：US07807983B2
公开(公告)日：2010-10-05
申请号：US11622619
申请日：2007-01-12
申请人： Kenneth H. Purser , James S. Buff , Victor Benveniste
发明人： Kenneth H. Purser , James S. Buff , Victor Benveniste
IPC分类号： H01J37/317 , H01J37/141 , H01J37/153
CPC分类号： H01J37/141 , H01J37/153 , H01J37/3171 , H01J2237/1501 , H01J2237/1526 , H01J2237/24528
摘要： A technique for reducing magnetic fields at an implant location is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus and method for reducing magnetic fields at an implant location. The apparatus and method may comprise a corrector-bar assembly comprising a set of magnetic core members, a plurality of coils distributed along the set of magnetic core members, and connecting elements to connect ends of the set of magnetic core members with each other to form a rectangular corrector-bar configuration. The corrector-bar assembly may be positioned at an exit region of a magnetic deflector to improve uniformity of a ribbon beam having a plurality of beamlets exiting from the magnetic deflector and the rectangular corrector-bar configuration may provide a desired magnetic field clamping action.
摘要翻译：公开了一种用于在植入位置减小磁场的技术。在一个特定的示例性实施例中，该技术可以被实现为用于减少植入位置处的磁场的装置和方法。该装置和方法可以包括校正棒组件，其包括一组磁芯构件，沿着该组磁芯构件分布的多个线圈，以及连接元件，用于将一组磁芯构件的端部彼此连接以形成一个矩形校正器配置。校正棒组件可以定位在磁偏转器的出口区域处，以改善具有从磁偏转器离开的多个子束的带状束的均匀性，并且矩形校正器配置可以提供期望的磁场夹紧动作。

29. 发明申请

US20100072401A1 HYDROGEN ION IMPLANTER USING A BROAD BEAM SOURCE 有权
标题翻译：使用大梁光源的氢离子植入物
公开(公告)号：US20100072401A1
公开(公告)日：2010-03-25
申请号：US12237963
申请日：2008-09-25
申请人： Thomas Parrill , Victor Benveniste
发明人： Thomas Parrill , Victor Benveniste
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/201 , H01J2237/3109 , H01J2237/31701 , H01L21/26506
摘要： Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving.
摘要翻译：结合多波束离子源的离子注入机用于满足制造用于光伏器件的薄层相关的工艺剂量和能量需求。薄层通过离子注入形成，然后切割。

30. 发明申请

US20060219944A1 Multichannel ion gun 有权
公开(公告)号：US20060219944A1
公开(公告)日：2006-10-05
申请号：US11074434
申请日：2005-03-08
申请人： Victor Benveniste
发明人： Victor Benveniste
IPC分类号： G21G5/00 , A61N5/00
CPC分类号： H01J37/3171
摘要： The present invention discloses systems and methods for generating low energy, high current ion beams by scaling beamline dimensions and employing multiple beamlines. An array of beamlets is generated by an ion source. The beamlets then pass through a mass analysis module that permits selected ions to pass while blocking other ions and/or particles. The selected ions can then be accelerated to a desired energy level. Subsequently, the beamlets are diverged in horizontal and vertical directions to form a single low energy, high current ion beam.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式