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21. 发明授权

US06812153B2 Method for high aspect ratio HDP CVD gapfill 有权
标题翻译：高宽比HDP CVD填隙方法
公开(公告)号：US06812153B2
公开(公告)日：2004-11-02
申请号：US10137132
申请日：2002-04-30
申请人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
发明人： Zhong Qiang Hua , Dong Qing Li , Zhengquan Tan , Zhuang Li , Michael Chiu Kwan , Bruno Geoffrion , Padmanabhan Krishnaraj
IPC分类号： H01L21302
CPC分类号： H01L21/02164 , C23C16/045 , C23C16/401 , C23C16/402 , C23C16/507 , H01L21/02211 , H01L21/02274 , H01L21/31612 , H01L21/76229
摘要： A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.
摘要翻译：一种沉积具有改进的间隙填充能力的高密度等离子体氧化硅层的方法。在一个实施例中，该方法包括将由含硅源，含氧源和氦组成的工艺气体流入衬底处理室并从工艺气体形成等离子体。氦流量相对于硅源和氧源的组合流量的比率在0.5:1和3.0:1之间。在一个具体实施方案中，工艺气体由单硅烷（SiH 4），分子氧（O 2）和氦组成。

22. 发明授权

US06715496B2 Method and apparatus for cleaning a semiconductor wafer processing system 失效
标题翻译：用于清洁半导体晶片处理系统的方法和装置
公开(公告)号：US06715496B2
公开(公告)日：2004-04-06
申请号：US10407525
申请日：2003-04-03
申请人： Michael Chiu Kwan , Alan W. Collins , Jalel Hamila , Padmanabhan Krishnaraj , Zhengquan Tan
发明人： Michael Chiu Kwan , Alan W. Collins , Jalel Hamila , Padmanabhan Krishnaraj , Zhengquan Tan
IPC分类号： B08B704
CPC分类号： H01L21/67028 , Y10S134/902 , Y10S438/905
摘要： A method and apparatus for cleaning a semiconductor wafer processing system comprising a turbomolecular pump. In one embodiment, the invention may be reduced to practice by first supplying a cleaning agent to a chamber; pumping the cleaning agent from the chamber through an the exhaust port; at least partially opening a gate valve; and drawing at least a portion of the cleaning agent through the gate valve and into the turbomolecular pump.
摘要翻译：一种用于清洁包括涡轮分子泵的半导体晶片处理系统的方法和装置。在一个实施例中，可以通过首先向腔室供应清洁剂来减少本发明的实践; 通过排气口将清洗剂从室抽出; 至少部分地打开闸阀; 并通过闸阀将至少一部分清洗剂吸入涡轮分子泵中。

23. 发明授权

US06635144B2 Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment 失效
公开(公告)号：US06635144B2
公开(公告)日：2003-10-21
申请号：US09833437
申请日：2001-04-11
申请人： Zhenjiang Cui , Padmanabhan Krishnaraj , Shamouil Shamouilian
发明人： Zhenjiang Cui , Padmanabhan Krishnaraj , Shamouil Shamouilian
IPC分类号： B08B600
CPC分类号： H01L21/67253 , B08B7/00 , C23C16/4405 , H01L21/67069 , H01L21/67248
摘要： Apparatus for processing semiconductor wafers includes a processing chamber, a chuck within the chamber for supporting a wafer during processing, a fiberoptic cable having a first end positioned at the surface of the chuck, and an optical pyrometer connected to a second end of the cable. The optical pyrometer measures the temperature of a wafer during processing and measures in situ temperature of plasma-excited cleaning gas introduced into the chamber during subsequent cleaning from walls thereof of unwanted solid deposits within the chamber. The pyrometer is connected to a computer which controls the flow of cleaning gases. When the temperature of the plasma-excited gas reaches a steady-state value the computer stops the flow of cleaning gases into the chamber and thereby stops the cleaning operation.

24. 发明授权

US06511922B2 Methods and apparatus for producing stable low k FSG film for HDP-CVD 失效
公开(公告)号：US06511922B2
公开(公告)日：2003-01-28
申请号：US09818359
申请日：2001-03-26
申请人： Padmanabhan Krishnaraj , Robert Duncan , Joseph D'Souza , Alan W. Collins , Nasreen Chopra , Kimberly Branshaw
发明人： Padmanabhan Krishnaraj , Robert Duncan , Joseph D'Souza , Alan W. Collins , Nasreen Chopra , Kimberly Branshaw
IPC分类号： H01L2131
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/31629 , H01L21/76801 , H01L21/76807
摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.

25. 发明授权

US06486081B1 Gas distribution system for a CVD processing chamber 有权
标题翻译：用于CVD处理室的气体分配系统
公开(公告)号：US06486081B1
公开(公告)日：2002-11-26
申请号：US09449203
申请日：1999-11-24
申请人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
发明人： Tetsuya Ishikawa , Padmanabhan Krishnaraj , Feng Gao , Alan W. Collins , Lily Pang
IPC分类号： H01L2131
CPC分类号： C23C16/45514 , C23C16/401 , C23C16/4411 , C23C16/455 , C23C16/45563 , C23C16/45578 , C23C16/507 , H01J37/3244 , H01L21/67069
摘要： The present invention provides an apparatus for depositing a film on a substrate comprising a processing chamber, a substrate support member disposed within the chamber, a first gas inlet, a second gas inlet, a plasma generator and a gas exhaust. The first gas inlet provides a first gas at a first distance from an interior surface of the chamber, and the second gas inlet provides a second gas at a second distance that is closer than the first distance from the interior surface of the chamber. Thus, the second gas creates a higher partial pressure adjacent the interior surface of the chamber to significantly reduce deposition from the first gas onto the interior surface. The present invention also provides a method for depositing a FSG film on a substrate comprising: introducing first gas through a first gas inlet at a first distance from an interior surface of the chamber, and introducing a second gas through a second gas inlet at a second distance from the interior surface of the chamber, wherein the second gas creates a higher partial pressure adjacent the interior surface of the chamber to prevent deposition from the first gas on the interior surface. Alternatively, the first gas is introduced at a different angle from the second gas with respect to a substrate surface.
摘要翻译：本发明提供一种用于在基板上沉积膜的装置，包括处理室，设置在室内的基板支撑件，第一气体入口，第二气体入口，等离子体发生器和排气。第一气体入口从腔室的内表面提供第一距离的第一气体，并且第二气体入口提供第二距离离第二距离距离腔室内表面的第一距离。因此，第二气体在室的内表面附近产生较高的分压，以显着地减少从第一气体到内表面的沉积。本发明还提供了一种用于在衬底上沉积FSG膜的方法，包括：将第一气体通过第一距离腔室的内表面的第一气体入口引入，并将第二气体通过第二气体入口引入第二气体距离室的内表面的距离，其中第二气体在室的内表面附近产生较高的分压，以防止内表面上的第一气体沉积。或者，第一气体相对于衬底表面以与第二气体不同的角度被引入。

26. 发明授权

US07799698B2 Deposition-selective etch-deposition process for dielectric film gapfill 失效
标题翻译：用于电介质膜间隙填充的沉积选择性蚀刻沉积工艺
公开(公告)号：US07799698B2
公开(公告)日：2010-09-21
申请号：US11422159
申请日：2006-06-05
申请人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
发明人： Lin Zhang , Xiaolin Chen , DongQing Li , Thanh N. Pham , Farhad K. Moghadam , Zhuang Li , Padmanabhan Krishnaraj
IPC分类号： H01I21/302
CPC分类号： H01L21/02274 , H01L21/02164 , H01L21/02304 , H01L21/31116 , H01L21/31612
摘要： A deposition/etching/deposition process is provided for filling a gap in a surface of a substrate. A liner is formed over the substrate so that distinctive reaction products are formed when it is exposed to a chemical etchant. The detection of such reaction products thus indicates that the portion of the film deposited during the first etching has been removed to an extent that further exposure to the etchant may remove the liner and expose underlying structures. Accordingly, the etching is stopped upon detection of distinctive reaction products and the next deposition in the deposition/etching/deposition process is begun.
摘要翻译：提供沉积/蚀刻/沉积工艺以填充衬底的表面中的间隙。在衬底上形成衬垫，使得当暴露于化学蚀刻剂时形成不同的反应产物。因此，这种反应产物的检测表明，在第一次蚀刻期间沉积的薄膜部分已被去除到进一步暴露于蚀刻剂可以去除衬垫并露出下面的结构的程度。因此，在检测到不同的反应产物后停止蚀刻，并且开始沉积/蚀刻/沉积工艺中的下一次沉积。

27. 发明申请

US20050214457A1 Deposition of low dielectric constant films by N2O addition 审中-公开
标题翻译：通过N2O添加沉积低介电常数膜
公开(公告)号：US20050214457A1
公开(公告)日：2005-09-29
申请号：US10812717
申请日：2004-03-29
申请人： Francimar Schmitt , Kimberly Branshaw , Padmanabhan Krishnaraj , Hichem M'Saad
发明人： Francimar Schmitt , Kimberly Branshaw , Padmanabhan Krishnaraj , Hichem M'Saad
IPC分类号： C23C16/40 , C23C16/56 , H01L21/312 , H01L21/316 , C23C16/00
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/3122
摘要： A method for depositing a low dielectric constant film includes providing a gas mixture including a cyclic organosiloxane and N2O as an oxidizing gas to a chamber and applying RF power to the gas mixture to deposit a low dielectric constant film. The gas mixture may also include oxygen and/or a linear hydrocarbon. In one aspect, the gas mixture includes N2O and oxygen as oxidizing gases, and a ratio of the flow rate of the N2O to a total flow rate of the N2O and the oxygen is between about 0.1 and about 0.5.
摘要翻译：一种沉积低介电常数膜的方法包括：向室内提供包含环状有机硅氧烷和N 2 O 2的气体混合物作为氧化气体，并将RF功率施加到气体混合物以沉积低介电常数电影。气体混合物还可以包括氧和/或直链烃。在一个方面，气体混合物包括N 2 O 3和氧气作为氧化气体，并且N 2 O 2的流量与总体流速的比率 N 2 O，氧在约0.1至约0.5之间。

28. 发明授权

US06890597B2 HDP-CVD uniformity control 失效
标题翻译： HDP-CVD均匀性控制
公开(公告)号：US06890597B2
公开(公告)日：2005-05-10
申请号：US10435296
申请日：2003-05-09
申请人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
发明人： Padmanabhan Krishnaraj , Bruno Geoffrion , Michael S. Cox , Lin Zhang , Bikram Kapoor , Anchuan Wang , Zhenjiang Cui
IPC分类号： C23C16/44 , C23C16/455 , C23C16/56 , C23C16/40
CPC分类号： C23C16/45502 , C23C16/45591 , C23C16/56
摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.
摘要翻译：沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。通过在衬底上变化的工艺来进行沉积和抛光。不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

29. 发明授权

US06863019B2 Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas 失效
标题翻译：半导体器件制造室清洗方法和清洁气体再循环的设备
公开(公告)号：US06863019B2
公开(公告)日：2005-03-08
申请号：US10159794
申请日：2002-05-30
申请人： Shamouil Shamouilian , Canfeng Lai , Michael Santiago Cox , Padmanabhan Krishnaraj , Tsutomu Tanaka , Sebastien Raoux , Peter I. Porshnev , Thomas Nowak
发明人： Shamouil Shamouilian , Canfeng Lai , Michael Santiago Cox , Padmanabhan Krishnaraj , Tsutomu Tanaka , Sebastien Raoux , Peter I. Porshnev , Thomas Nowak
IPC分类号： B08B7/00 , C23C16/44 , C23C16/452 , C23C16/455 , H01J37/32 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： B08B7/0035 , B08B7/00 , C23C16/4405 , C23C16/452 , C23C16/45593 , H01J37/3244 , H01J37/32844 , H01J2237/335 , Y02C20/30
摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.
摘要翻译：清洁半导体制造处理室的方法包括清洁气体组分的再循环。因此，有效地利用输入清洁气体，并且减少不期望的排放。该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

30. 发明授权

US06633076B2 Methods and apparatus for producing stable low k FSG film for HDP-CVD 失效
标题翻译：用于生产用于HDP-CVD的稳定的低k FSG膜的方法和设备
公开(公告)号：US06633076B2
公开(公告)日：2003-10-14
申请号：US10283996
申请日：2002-10-30
申请人： Padmanabhan Krishnaraj , Robert Duncan , Joseph D'Souza , Alan W. Collins , Nasreen Chopra , Kimberly Branshaw
发明人： Padmanabhan Krishnaraj , Robert Duncan , Joseph D'Souza , Alan W. Collins , Nasreen Chopra , Kimberly Branshaw
IPC分类号： H01L3100
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02211 , H01L21/02274 , H01L21/31629 , H01L21/76801 , H01L21/76807
摘要： Methods and apparatus of the present invention deposit fluorinated silicate glass (FSG) in such a manner that it strongly adheres to an overlying or underlying barrier layer or etch stop layer, and has a lower dielectric constant, among other benefits. In one embodiment, silicon tetrafluoride (SiF4), oxygen (O2), and argon (Ar) are used as the reactant gases, with the ratio of oxygen to silicon controlled to be at between about 2:1 to 6:1. Such O2 levels help reduce the amount of degradation of ceramic chamber components otherwise caused by the elimination of silane from the process recipe.
摘要翻译：本发明的方法和装置以这样的方式沉积氟化硅酸盐玻璃（FSG），使得它强烈地粘附到上覆的或下面的阻挡层或蚀刻停止层，并具有较低的介电常数以及其它益处。在一个实施方案中，使用四氟化硅（SiF），氧（O 2 PDAT>）和氩（Ar）作为反应气体，其中氧与硅的比例控制在约2:1至6:1之间。这样的O 2 水平有助于减少陶瓷室组分的降解量，否则由于工艺配方中硅烷的消除而引起。

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