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21. 发明申请

US20060157756A1 Solid-state imaging device and manufacturing method thereof 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20060157756A1
公开(公告)日：2006-07-20
申请号：US11263973
申请日：2005-11-02
申请人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
发明人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L31/035236
摘要： An object of the present invention is to provide a solid-state imaging device which can increase the amount of signal charge accumulation in a photodiode, and a manufacturing method thereof. The solid-state imaging device according to the present invention includes: a gate electrode formed on a p-type semiconductor substrate; an n-type signal accumulation region which accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode; an n-type drain region which is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode; and a p-type punch-through stopper region which has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.
摘要翻译：本发明的目的是提供一种能够增加光电二极管中的信号电荷积聚量的固态成像装置及其制造方法。根据本发明的固态成像装置包括：形成在p型半导体衬底上的栅电极; 累积通过光电转换获得的信号电荷的n型信号存储区域，并形成在半导体衬底中，使得信号存储区域的一部分位于栅电极下方; 位于所述半导体衬底中的n型漏极区，使得所述n型漏极区域与所述栅电极相交的所述信号聚集区域相对; 以及具有比半导体衬底更高的杂质浓度的p型穿通止挡区域，并且形成在半导体衬底中，使得p型穿通区域位于漏极区域的下方，其中，穿通停止区域比漏极区域的端部更靠近信号聚集区域。

22. 发明授权

US06674470B1 MOS-type solid state imaging device with high sensitivity 失效
标题翻译：高灵敏度的MOS型固态成像装置
公开(公告)号：US06674470B1
公开(公告)日：2004-01-06
申请号：US08933975
申请日：1997-09-19
申请人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
发明人： Nagataka Tanaka , Eiji Oba , Keiji Mabuchi , Michio Sasaki , Ryohei Miyagawa , Hirofumi Yamashita , Yoshinori Iida , Hisanori Ihara , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H04N5/3765 , H04N5/3575 , H04N5/37457
摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.
摘要翻译：固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管，用于选择单元格。读出晶体管形成在半导体衬底中的第一器件区域中。复位晶体管形成在半导体衬底中的第二器件区域中。读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

23. 发明授权

US5504526A Solid-state image sensing device with storage-diode potential controller 失效
标题翻译：具有存储二极管电位控制器的固态摄像装置
公开(公告)号：US5504526A
公开(公告)日：1996-04-02
申请号：US155833
申请日：1993-11-23
申请人： Ryohei Miyagawa , Shinji Ohsawa , Hirofumi Yamashita , Michio Sasaki , Yoshiyuki Matsunaga
发明人： Ryohei Miyagawa , Shinji Ohsawa , Hirofumi Yamashita , Michio Sasaki , Yoshiyuki Matsunaga
IPC分类号： H01L27/148 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/369 , H04N5/3728 , H04N5/376
CPC分类号： H04N5/3728 , H01L27/14831 , H04N5/3597
摘要： A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode. A potential controller is provided which forces, when a signal charge packet is read out of the storage diode toward the CCD register layer, the storage diode to decrease in potential so that the storage diode becomes potentially less than its potential as set during the reset operation, while causing the channel region to be fixed at almost the same potential during the read operation and the reset operation.
摘要翻译：固态成像装置包括基板和布置在基板上的电荷分组存储单元或像素（或“像素”）的阵列，每个包括存储二极管，其中存储指示入射光的信号电荷分组。电荷转移部分与图像元素阵列耦合。转印部分包括与存储二极管间隔开以限定它们之间的沟道区域的电荷耦合器件（CCD）寄存器层，以及覆盖寄存器层和沟道区域的第一绝缘电极。复位部分耦合到存储二极管，用于通过额外地将额外的电荷分组注入到存储二极管中并通过使电荷从存储二极管排出来潜在地复位存储二极管。提供了一种电位控制器，当将信号电荷分组从存储二极管朝向CCD寄存器层读出时，存储二极管降低电位，使得存储二极管潜在地小于其在复位操作期间设置的电位同时在读取操作和复位操作期间使通道区域固定在几乎相同的电位。

24. 发明授权

US5210433A Solid-state CCD imaging device with transfer gap voltage controller 失效
标题翻译：带传输间隙电压控制器的固态CCD成像装置
公开(公告)号：US5210433A
公开(公告)日：1993-05-11
申请号：US962003
申请日：1992-10-15
申请人： Shinji Ohsawa , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Shinji Ohsawa , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L29/76841 , H01L27/14831
摘要： A solid-state CCD imaging device has a substrate, photosensitive pixel cells provided as pixel sections in the substrate, and a transfer section, provided in the substrate, for transferring signal charge carriers read out from the pixel cells in a predetermined transfer direction. The transfer section has a semiconductive charge transfer channel layer formed in the substrate and transfer electrodes insulatively provided above the substrate and arrayed in the above direction while predetermined gap sections are kept therebetween. Each of the transfer electrodes defines one charge transfer stage. A gap potential control electrode layer is insulatively disposed above the electrodes. The gap potential control electrode layer is applied with a gap potential control voltage and steadily sets, in accordance with the applied voltage, the potential in layer sections of the channel layer located below the gap section of the transfer electrodes at a predetermined level intermediate between "High" and "Low" level voltages of the channel layers upon charge transfer.
摘要翻译：固体CCD成像装置具有基板，设置在基板中的像素部的感光像素单元和设置在基板中的转印部，用于传送沿预定的传送方向从像素单元读出的信号电荷载流子。转印部分具有形成在衬底中的半导体电荷转移沟道层，并且绝缘地设置在衬底上方并沿上述方向排列的传输电极，同时保持预定的间隙部分。每个转移电极限定一个电荷转移级。间隙电位控制电极层绝缘地设置在电极上方。间隙电位控制电极层被施加间隙电位控制电压，并且根据施加的电压稳定地将位于传输电极的间隙部分下方的沟道层的层部分中的电位设置在“ 电荷转移时通道层的“高”和“低”电平电压。

25. 发明授权

US08009217B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08009217B2
公开(公告)日：2011-08-30
申请号：US12427952
申请日：2009-04-22
申请人： Ryohei Miyagawa
发明人： Ryohei Miyagawa
IPC分类号： H04N5/335 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14612 , H01L27/14689
摘要： In a solid-state imaging device, provided is a solid-state imaging device in which a first gate insulation film 22 for the readout transistor 12 in a pixel is formed so as to be thicker than a second gate insulation film 23 for an amplification transistor 14 in the pixel, and the second gate insulation film 23 for the amplification transistor 14 in the pixel is formed so as to be thicker than a third gate insulation film 24 for an n-type micro transistor 17 and a p-type micro transistor 18 in a peripheral region outside the pixel, whereby it is possible to suppress a 1/f noise of the amplification transistor 14 and also possible to increase a saturated charge amount.
摘要翻译：在固态成像装置中，提供了一种固态成像装置，其中用于像素中的读出晶体管12的第一栅极绝缘膜22形成为比用于放大晶体管的第二栅极绝缘膜23更厚像素中的放大晶体管14的第二栅极绝缘膜23形成为比n型微晶体管17和p型微晶体管18的第三栅极绝缘膜24厚在像素外部的周边区域中，由此可以抑制放大晶体管14的1 / f噪声，并且还可以增加饱和电荷量。

26. 发明授权

US07906827B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07906827B2
公开(公告)日：2011-03-15
申请号：US12172548
申请日：2008-07-14
申请人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
发明人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14643
摘要： A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1 from the peripheral portion toward the central portion. The shift amount s1 is greater than the shift amount r.
摘要翻译：固态成像装置包括第一布线层，第二布线层，基板接触和第一接触。衬底接触相对于形成周边像素的光接收部分的布置相对于形成中心像素的光接收部分从衬底接触件的布置偏移或不偏移移位量r 从周边部朝向中央部。第一接触件相对于周边像素的光接收部分的布置从第一接触件相对于中心像素的光接收部分的布置移位到从周边部分朝向中央部分。移位量s1大于移动量r。

27. 发明授权

US07847848B2 Solid-state imaging device having a plurality of lines formed in at least two layers on semiconductor substrate 失效
标题翻译：具有在半导体衬底上形成至少两层的多条线的固态成像器件
公开(公告)号：US07847848B2
公开(公告)日：2010-12-07
申请号：US11969527
申请日：2008-01-04
申请人： Hirohisa Ohtsuki , Ryohei Miyagawa , Motonari Katsuno , Mikiya Uchida
发明人： Hirohisa Ohtsuki , Ryohei Miyagawa , Motonari Katsuno , Mikiya Uchida
IPC分类号： H04N9/64 , H04N3/14 , H04N5/335 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14623 , H01L27/14643
摘要： In a MOS-type solid-state imaging device 1, in pixels 101 to 104 in which lines in an upper layer (charge transfer lines 1018 to 1048) are formed in shifted positions located toward a center L1 of an image area, each two oppositely disposed pixels with the center L1 of the image area sandwiched therebetween, such as a pixel 101 and a pixel 104 have the following relation. In each of the pixels 101 and 104, power supply lines 1016 and 1046, vertical signal lines 1017 and 1047, and charge transfer lines 1018 and 1048 relating to each of the pixels 101 and 104 are arranged symmetrically with respect to an imaginary plane extending from the center L1 of a sensor 10 in a direction orthogonal to the drawing page in an X-axis direction.
摘要翻译：在MOS型固态成像装置1中，在像素101〜104中，上层（电荷传输线1018〜1048）中的线形成在位于图像区域的中心L1的移位位置，位于像素101和像素104之间的图像区域的中心L1的位置像素具有以下关系。在每个像素101和104中，与像素101和104中的每一个相关的电源线1016和1046，垂直信号线1017和1047以及电荷传输线1018和1048相对于从传感器10的中心L1在X轴方向上与绘图页正交的方向上。

28. 发明申请

US20090046174A1 SOLID STATE IMAGING DEVICE AND DRIVING METHOD THEREFOR 审中-公开
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US20090046174A1
公开(公告)日：2009-02-19
申请号：US12158259
申请日：2006-12-19
申请人： Koujirou Yoneda , Ryohei Miyagawa
发明人： Koujirou Yoneda , Ryohei Miyagawa
IPC分类号： H04N5/76 , H04N5/335
CPC分类号： H04N5/341 , H04N5/3577 , H04N5/3741
摘要： A solid state imaging device includes an imaging circuit 50 and a signal processing circuit 51. The imaging circuit 50 includes a plurality of pixels arranged in a matrix and outputs signals of the pixels line by line as an imaging signal containing a discontinuous portion. The signal processing circuit 51 has a memory 54 which temporarily stores the imaging signal and a memory controller 53 which writes and reads the imaging signal to and from the memory 54. The signal processing circuit converts the imaging signal containing the discontinuous portion into a continuous image signal.
摘要翻译：固态成像装置包括成像电路50和信号处理电路51.成像电路50包括排列成矩阵的多个像素，并逐行地输出像素的信号作为包含不连续部分的成像信号。信号处理电路51具有临时存储成像信号的存储器54和向存储器54写入和读取成像信号的存储器控制器53.信号处理电路将包含不连续部分的成像信号转换为连续图像信号。

29. 发明申请

US20070290242A1 Solid-state imaging device having transmission gates which pass over part of photo diodes when seen from the thickness direction of the semiconductor substrate 审中-公开
标题翻译：具有从半导体基板的厚度方向观察时通过了一部分光电二极管的传输门的固态成像装置
公开(公告)号：US20070290242A1
公开(公告)日：2007-12-20
申请号：US11806715
申请日：2007-06-04
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603
摘要： A solid-imaging device having a plurality of image pixels arranged along a main surface of a semiconductor substrate, wherein each of the plurality of image pixels includes a photodiode that converts incident light into an electric charge and a transmission gate that is formed so as to have a crossing area that partially passes over the photodiode when seen from the thickness direction of the semiconductor substrate. The transmission gate of the solid-state imaging device is formed in a manner that (i) a first region including a laminated body of a silicon film and a silicide film, and (ii) a second region that includes the silicon film and does not include the silicide film, both arranged along a main surface of the semiconductor substrate, and the second region in the transmission gate is formed in at least one part of the crossing area.
摘要翻译：一种具有沿着半导体基板的主表面布置的多个图像像素的固体成像装置，其中，所述多个图像像素中的每一个包括将入射光转换为电荷的光电二极管和形成为具有从半导体基板的厚度方向观察时部分地越过光电二极管的交叉区域。固态成像装置的传输门形成为：（i）包括硅膜和硅化物膜的层叠体的第一区域，以及（ii）包含硅膜的第二区域，不包括硅膜包括沿着半导体衬底的主表面布置的硅化物膜，并且传输门中的第二区域形成在交叉区域的至少一部分中。

30. 发明授权

US07015522B2 Solid-state image sensor 有权
标题翻译：固态图像传感器
公开(公告)号：US07015522B2
公开(公告)日：2006-03-21
申请号：US11099629
申请日：2005-04-06
申请人： Ryohei Miyagawa , Shoji Tanaka
发明人： Ryohei Miyagawa , Shoji Tanaka
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L31/035281 , H01L31/03529
摘要： A solid-state image sensor of the present invention includes a semiconductor substrate 1 having a plurality of pixels, and each of the pixels comprises an impurity layer a photoelectric converting layer, a read out region, and a gate electrode. The impurity layer includes an adjoining portion adjacent to a portion of the substrate directly beneath the gate electrode The adjoining portion includes sub-portions aligned along a width direction of a gate that is orthogonal to a transfer direction of a signal charge and a thickness direction of the substrate. An impurity density in the sub-portion 2a including a center of the adjoining portion is lower than that in the sub-portions.
摘要翻译：本发明的固态图像传感器包括具有多个像素的半导体基板1，并且每个像素包括杂质层，光电转换层，读出区域和栅电极。杂质层包括与栅电极正下方的基板的一部分相邻的邻接部分。邻接部分包括沿栅极的宽度方向排列的子部分，该栅极与信号电荷的传输方向正交，底物。包括相邻部分的中心的子部分2a中的杂质浓度低于子部分中的杂质浓度。

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