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    • 21. 发明授权
    • Positive-working resist composition
    • 正面抗蚀剂组成
    • US06602646B1
    • 2003-08-05
    • US09684888
    • 2000-10-06
    • Kenichiro SatoKunihiko KodamaToshiaki Aoai
    • Kenichiro SatoKunihiko KodamaToshiaki Aoai
    • G03F7004
    • G03F7/039G03F7/0045Y10S430/106
    • The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.
    • 本发明提供一种消除图案上的边缘粗糙度并提供优异的抗蚀剂图案轮廓的高灵敏度化学放大正性抗蚀剂组合物。 提供了一种新型的正性抗蚀剂组合物,其包含(A)含有由至少一个含有由通式(pI)至(pVI)表示的脂环族烃部分并且单体组分含量为5的部分保护的碱溶性基团的树脂 通过凝胶渗透色谱法(GPC)确定的总图案面积的百分比或更少,其通过酸的作用相对于碱性显影剂的溶液速度增加,和(B)能够产生酸的化合物 用活性射线或辐射照射。
    • 22. 发明授权
    • Positive photoresist composition
    • 正光致抗蚀剂组合物
    • US06576392B1
    • 2003-06-10
    • US09456827
    • 1999-12-06
    • Kenichiro SatoKunihiko KodamaToshiaki AoaiHidekazu Ohashi
    • Kenichiro SatoKunihiko KodamaToshiaki AoaiHidekazu Ohashi
    • G03C173
    • G03F7/0045G03F7/0397Y10S430/106Y10S430/111Y10S430/115
    • A positive photoresist composition comprising a photo-acid gererator and a specific resin. The resin contains repeating units each having a group represented by formula (I): —SO2—O—R wherein R represents an optionally substituted alkyl, cycloalkyl, or alkenyl group and comes to have an increased rate of dissolution in an alkaline developing solution by the action of an acid, or contains alkali-soluble groups protected by partial structures containing an alicyclic hydrocarbon and represented by at least one of formulae (pI) to (pVI) defined in the specification and which decomposes by the action of an acid to have enhanced solubility in an alkali. The latter is used in combination with a compound which decomposes by the action of an acid to generate a sulfonic acid.
    • 一种正型光致抗蚀剂组合物,其包含光酸注射器和特定树脂。 树脂含有各自具有由式(I)表示的基团的重复单元:其中R表示任选取代的烷基,环烷基或烯基,并且通过酸的作用使碱显影溶液的溶解速率增加, 或含有由说明书中定义的至少一种式(pI)至(pVI)表示的含有脂环族烃的部分结构保护的碱溶性基团,其通过酸的作用而分解,从而具有增强的在碱中的溶解度。 后者与通过酸的作用分解以产生磺酸的化合物组合使用。
    • 23. 发明授权
    • Positive photosensitive composition
    • US06517991B1
    • 2003-02-11
    • US09606681
    • 2000-06-30
    • Kunihiko KodamaKenichiro SatoToshiaki Aoai
    • Kunihiko KodamaKenichiro SatoToshiaki Aoai
    • G03F7004
    • G03F7/0397G03F7/0045Y10S430/106Y10S430/111
    • A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.