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1. 发明授权

US06670095B2 Positive-working resist composition 有权
公开(公告)号：US06670095B2
公开(公告)日：2003-12-30
申请号：US10022363
申请日：2001-12-20
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.

2. 发明授权

US06602646B1 Positive-working resist composition 有权
标题翻译：正面抗蚀剂组成
公开(公告)号：US06602646B1
公开(公告)日：2003-08-05
申请号：US09684888
申请日：2000-10-06
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.
摘要翻译：本发明提供一种消除图案上的边缘粗糙度并提供优异的抗蚀剂图案轮廓的高灵敏度化学放大正性抗蚀剂组合物。提供了一种新型的正性抗蚀剂组合物，其包含（A）含有由至少一个含有由通式（pI）至（pVI）表示的脂环族烃部分并且单体组分含量为5的部分保护的碱溶性基团的树脂通过凝胶渗透色谱法（GPC）确定的总图案面积的百分比或更少，其通过酸的作用相对于碱性显影剂的溶液速度增加，和（B）能够产生酸的化合物用活性射线或辐射照射。

3. 发明授权

US06576392B1 Positive photoresist composition 有权
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US06576392B1
公开(公告)日：2003-06-10
申请号：US09456827
申请日：1999-12-06
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hidekazu Ohashi
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hidekazu Ohashi
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： A positive photoresist composition comprising a photo-acid gererator and a specific resin. The resin contains repeating units each having a group represented by formula (I): —SO2—O—R wherein R represents an optionally substituted alkyl, cycloalkyl, or alkenyl group and comes to have an increased rate of dissolution in an alkaline developing solution by the action of an acid, or contains alkali-soluble groups protected by partial structures containing an alicyclic hydrocarbon and represented by at least one of formulae (pI) to (pVI) defined in the specification and which decomposes by the action of an acid to have enhanced solubility in an alkali. The latter is used in combination with a compound which decomposes by the action of an acid to generate a sulfonic acid.
摘要翻译：一种正型光致抗蚀剂组合物，其包含光酸注射器和特定树脂。树脂含有各自具有由式（I）表示的基团的重复单元：其中R表示任选取代的烷基，环烷基或烯基，并且通过酸的作用使碱显影溶液的溶解速率增加，或含有由说明书中定义的至少一种式（pI）至（pVI）表示的含有脂环族烃的部分结构保护的碱溶性基团，其通过酸的作用而分解，从而具有增强的在碱中的溶解度。后者与通过酸的作用分解以产生磺酸的化合物组合使用。

4. 发明授权

US06517991B1 Positive photosensitive composition 失效
公开(公告)号：US06517991B1
公开(公告)日：2003-02-11
申请号：US09606681
申请日：2000-06-30
申请人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
发明人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.

5. 发明授权

US5981140A Positive photosensitive composition 失效
标题翻译：正光敏组合物
公开(公告)号：US5981140A
公开(公告)日：1999-11-09
申请号：US932168
申请日：1997-09-17
申请人： Kenichiro Sato , Kunihiko Kodama , Kazuya Uenishi , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Kazuya Uenishi , Toshiaki Aoai
IPC分类号： G03F7/00 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , Y10S430/115 , Y10S430/121 , Y10S430/122
摘要： A positive photosensitive composition comprising:a compound represented by formula (I) or (I') and a compound represented by formula (II) as compounds which generate a sulfonic acid upon irradiation with actinic rays or radiation: ##STR1## The substituents in these formulae are as defined in the specification. The positive photosensitive composition has high sensitivity and high resolving power, undergoes neither a decrease in resist pattern line width nor the formation of a T-top resist pattern surface with the lapse of time from exposure to heat treatment, and exhibits less profile deterioration such as residual standing wave and collapse.
摘要翻译：一种正型光敏组合物，其包含：由式（I）或（I'）表示的化合物和由式（II）表示的化合物作为在光化射线或辐射照射时产生磺酸的化合物：这些式中的取代基为在规范中定义。正型感光性组合物具有高灵敏度和高分辨能力，经历曝光与热处理后的时间不会影响抗蚀剂图案线宽度的降低和T型抗蚀剂图形表面的形成，并且表现出较小的轮廓劣化，例如残余驻波和崩溃。

6. 发明授权

US06699635B1 Positive photosensitive composition 有权
标题翻译：正光敏组合物
公开(公告)号：US06699635B1
公开(公告)日：2004-03-02
申请号：US09471007
申请日：1999-12-23
申请人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai , Yasumasa Kawabe
发明人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai , Yasumasa Kawabe
IPC分类号： G03F7004
CPC分类号： G03F7/0048 , G03F7/0397 , Y10S430/106
摘要： A positive photosensitive composition suitable for resist pattern formation under exposure to far ultraviolet light of wavelengths of 250 nm or shorter, particularly 220 nm or shorther, comprising: (A) a resin comprising constitutional repeating units wherein particular ring structures are present and having groups capable of decomposing under the action of an acid to cause an increase of the solubility in an alkali developer, (B) a photo-acid generator capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a fluorine-containing surfactant, a silicon-containing surfactant or a mixture thereof.
摘要翻译：适合于在暴露于波长为250nm或更短，特别是220nm或更短的远紫外光下的抗蚀剂图案形成的正性感光性组合物，其包含：（A）包含结构重复单元的树脂，其中存在特定的环结构并具有基团在酸的作用下分解，导致碱显影剂溶解度的增加，（B）能够在用光化学射线或辐射照射时产生酸的光酸发生剂，（C）含氟表面活性剂，含硅表面活性剂或其混合物。

7. 发明授权

US06479211B1 Positive photoresist composition for far ultraviolet exposure 有权
标题翻译：用于远紫外线曝光的正光致抗蚀剂组合物
公开(公告)号：US06479211B1
公开(公告)日：2002-11-12
申请号：US09577884
申请日：2000-05-25
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hajime Nakao
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hajime Nakao
IPC分类号： G03F7039
CPC分类号： G03F7/0397 , G03F7/0048 , Y10S430/106
摘要： A positive photoresist composition for far ultraviolet exposure is disclosed, comprising a compound capable of generating an acid upon irradiation with actinic rays or radiation and a resin having a repeating unit represented by formula (I) and being capable of decomposing under the action of an acid to increase the solubility in alkali. The positive photoresist composition of the present invention may further comprise a fluorine-containing and/or silicon-containing surfactant, an acid decomposable resin, a compound capable of decomposing under the action of an acid to generate a sulfonic acid, and/or a specific solvent, according to the objects.
摘要翻译：公开了一种用于远紫外线曝光的正性光致抗蚀剂组合物，其包含能够在光化射线或辐射照射时能够产生酸的化合物和具有由式（I）表示的重复单元并且能够在酸的作用下分解的树脂以增加在碱中的溶解度。本发明的正型光致抗蚀剂组合物可以进一步包含含氟和/或含硅表面活性剂，可酸分解树脂，能够在酸的作用下分解以产生磺酸的化合物和/或特定的溶剂，根据目的。

8. 发明授权

US06291130B1 Positive photosensitive composition 失效
标题翻译：正光敏组合物
公开(公告)号：US06291130B1
公开(公告)日：2001-09-18
申请号：US09361568
申请日：1999-07-27
申请人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
发明人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III)
摘要翻译：一种正型光敏组合物，其包含（A）在用光化射线或辐射照射时产生酸的化合物和（B-1）具有通过酸作用分解的基团的树脂，以增加在碱性显影中的溶解度溶液，含有式（I），（II）和（III）表示的至少一种结构，

9. 发明授权

US5945250A Positive photosensitive composition 失效
标题翻译：正光敏组合物
公开(公告)号：US5945250A
公开(公告)日：1999-08-31
申请号：US868932
申请日：1997-06-04
申请人： Toshiaki Aoai , Kenichiro Sato , Kunihiko Kodama
发明人： Toshiaki Aoai , Kenichiro Sato , Kunihiko Kodama
IPC分类号： G03F7/00 , G03F7/004 , G03F7/039 , H01L21/027 , B03C1/492 , C08F2/46
CPC分类号： G03F7/0045 , Y10S430/107 , Y10S430/115 , Y10S430/118 , Y10S430/12 , Y10S430/122
摘要： A photosensitive composition containing a sulfonium or iodonium salt resin having a specific repeating structural units has good solubility in solvents and high photosensitivity, are capable of giving an excellent resist pattern, and change little with time after exposure.
摘要翻译：含有具有特定重复结构单元的锍盐或碘鎓盐树脂的光敏组合物在溶剂中具有良好的溶解性和高光敏性，能够得到优异的抗蚀剂图案，并且在曝光后随时间变化很小。

10. 发明授权

US06818377B2 Positive photosensitive composition 失效
标题翻译：正光敏组合物
公开(公告)号：US06818377B2
公开(公告)日：2004-11-16
申请号：US10176067
申请日：2002-06-21
申请人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
发明人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.
摘要翻译：一种正型光敏组合物，其包含（A）在用光化射线或辐射照射时产生酸的化合物，和（B-1）具有通过酸作用分解的基团的树脂，以增加在碱性显影中的溶解度溶液，并且如说明书中所述含有至少一种由式（I），（II）和（III）表示的结构，或（B-2）具有至少一个由式（Ib）表示的一价多元脂环基团的树脂，如说明书和通过酸的作用而分解以增加在碱性显影液中的溶解度的基团。含有本发明树脂的正型感光性组合物对于远紫外线具有高透射率，特别是波长为220nm以下，表现出良好的耐干蚀刻性。此外，当使用波长为250nm以下，特别是220nm以下的远紫外光（特别是ArF准分子激光）时，正型感光性组合物显示出高灵敏度，良好的分辨率和良好的图案分布，作为曝光光源，因此可以有效地用于形成半导体元件的制造所需的精细图案。

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