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1. 发明授权

US5981140A Positive photosensitive composition 失效
标题翻译：正光敏组合物
公开(公告)号：US5981140A
公开(公告)日：1999-11-09
申请号：US932168
申请日：1997-09-17
申请人： Kenichiro Sato , Kunihiko Kodama , Kazuya Uenishi , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Kazuya Uenishi , Toshiaki Aoai
IPC分类号： G03F7/00 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , Y10S430/115 , Y10S430/121 , Y10S430/122
摘要： A positive photosensitive composition comprising:a compound represented by formula (I) or (I') and a compound represented by formula (II) as compounds which generate a sulfonic acid upon irradiation with actinic rays or radiation: ##STR1## The substituents in these formulae are as defined in the specification. The positive photosensitive composition has high sensitivity and high resolving power, undergoes neither a decrease in resist pattern line width nor the formation of a T-top resist pattern surface with the lapse of time from exposure to heat treatment, and exhibits less profile deterioration such as residual standing wave and collapse.
摘要翻译：一种正型光敏组合物，其包含：由式（I）或（I'）表示的化合物和由式（II）表示的化合物作为在光化射线或辐射照射时产生磺酸的化合物：这些式中的取代基为在规范中定义。正型感光性组合物具有高灵敏度和高分辨能力，经历曝光与热处理后的时间不会影响抗蚀剂图案线宽度的降低和T型抗蚀剂图形表面的形成，并且表现出较小的轮廓劣化，例如残余驻波和崩溃。

2. 发明授权

US6150068A Photosensitive resin composition for far-ultraviolet exposure 失效
标题翻译：用于远紫外线曝光的感光树脂组合物
公开(公告)号：US6150068A
公开(公告)日：2000-11-21
申请号：US911165
申请日：1997-08-14
申请人： Kenichiro Sato , Kunihiko Kodama , Kazuya Uenishi , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Kazuya Uenishi , Toshiaki Aoai
IPC分类号： G03F7/004 , G03F7/039 , G03F7/30 , H01L21/027 , B03F7/004
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/121
摘要： A photosensitive resin composition for far-ultraviolet exposure of from 170 to 220 nm, which comprises an N-hydroxymaleinimide-type sulfonate photo acid generator having a specific structure and a resin having a substituent capable of increasing the solubility to an alkali developer by an acid, and a pattern forming method using the photosensitive resin composition. The photosensitive resin composition has a high transparency to light having a wavelength of from 170 to 220 nm and is excellent in the photocomposition property and the acid generating efficiency.
摘要翻译：一种用于远紫外线暴露于170至220nm的感光树脂组合物，其包含具有特定结构的N-羟基马来酰亚胺型磺酸盐光致酸产生剂和具有能够通过酸增加对碱性显影剂的溶解度的取代基的树脂，以及使用感光性树脂组合物的图案形成方法。感光性树脂组合物对波长为170〜220nm的光具有高透明性，并且光致变色性和酸产生效率优异。

3. 发明授权

US06962766B2 Positive photoresist composition 有权
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US06962766B2
公开(公告)日：2005-11-08
申请号：US10109872
申请日：2002-04-01
申请人： Kazuya Uenishi , Toshiaki Aoai , Kenichiro Sato
发明人： Kazuya Uenishi , Toshiaki Aoai , Kenichiro Sato
IPC分类号： C08K5/00 , C08L101/00 , G03F7/004 , G03F7/039 , G03F7/20 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0397
摘要： A positive photoresist composition comprises: an acid-decomposable resin containing a specified repeating unit; an acid-generator; and a specified dissolution-inhibiting compound.
摘要翻译：正性光致抗蚀剂组合物包含：含有特定重复单元的酸分解树脂; 酸发生器; 和特定的溶解抑制化合物。

4. 发明授权

US5529881A Postive photoresist composition 失效
标题翻译：光刻胶组合物
公开(公告)号：US5529881A
公开(公告)日：1996-06-25
申请号：US404985
申请日：1995-03-16
申请人： Yasumasa Kawabe , Kenichiro Sato , Toshiaki Aoai , Kazuya Uenishi
发明人： Yasumasa Kawabe , Kenichiro Sato , Toshiaki Aoai , Kazuya Uenishi
IPC分类号： G03F7/022 , G03F7/039 , H01L21/027 , G03F7/023 , G03F7/30
CPC分类号： G03F7/022
摘要： A positive photoresist composition for super fine working is disclosed, which comprises (a) an alkali-soluble resin and (b) as a photosensitive compound the 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic acid ester of a polyhydroxy compound represented by formula (I) or (II), wherein in a high-speed liquid chromatography measured using a ultraviolet ray of 254 nm, the pattern of the diester component and the pattern of the complete ester component of said 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonic acid of the polyhydroxy compound shown by formula (I) or (II) are at least 50% and less than 40%, respectively, of the whole pattern areas; ##STR1## wherein R.sub.1 to R.sub.11, which may be the same or different, each represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, or a cycloalkyl group, with the proviso that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group, and R.sub.12 to R.sub.22, which may be the same or different, each represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, or a cycloalkyl group, with the proviso that at least one of R.sub.12 to R.sub.22 is a cycloalkyl group. The photoresist composition has a high resolving power and a less layer thickness reliance of the resolving power, and a wide development latitude, is reluctant to form a development residue, and further has a very excellent storage stability, and does not deposit the photosensitive material and does not form microgels with the passage of time.
摘要翻译：公开了一种用于超细加工的正性光致抗蚀剂组合物，其包含（a）碱溶性树脂和（b）作为光敏化合物的1,2-萘醌二叠氮基-5-（和/或-4-）磺酸酯由式（I）或（II）表示的多羟基化合物，其中在使用254nm的紫外线测量的高速液相色谱中，所述二酯组分的图案和所述1,2的完全酯组分的图案式（I）或（II）所示的多羟基化合物的萘醌二叠氮基-5-（和/或-4-）磺酸分别为整个图案区域的至少50％且小于40％; 1，其可以相同或不同，各自表示氢原子，卤素原子，烷基，烷氧基或环烷基，条件是R 1至R 11中的至少一个为环烷基，R 12至 R 22可以相同或不同，各自表示氢原子，卤素原子，烷基，烷氧基，o 环烷基，条件是R12至R22中的至少一个为环烷基。光致抗蚀剂组合物具有高的分辨能力和较小的层厚度的分辨能力依赖性，并且广泛的开发范围不愿形成显影残留物，并且还具有非常优异的储存稳定性，并且不沉积感光材料和随着时间的推移不会形成微凝胶。

5. 发明授权

US06670095B2 Positive-working resist composition 有权
公开(公告)号：US06670095B2
公开(公告)日：2003-12-30
申请号：US10022363
申请日：2001-12-20
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.

6. 发明授权

US06602646B1 Positive-working resist composition 有权
标题翻译：正面抗蚀剂组成
公开(公告)号：US06602646B1
公开(公告)日：2003-08-05
申请号：US09684888
申请日：2000-10-06
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： The present invention provides a high sensitivity chemically amplified positive-working resist composition which eliminates edge roughness on pattern and provides an excellent resist pattern profile. A novel positive-working resist composition is provided comprising (A) a resin containing an alkali-soluble group protected by at least one of moieties containing alicyclic hydrocarbon represented by general formulae (pI) to (pVI) and having a monomer component content of 5% or less of the total pattern area as determined by gel permeation chromatography (GPC), which increases in its solution velocity with respect to an alkaline developer by the action of an acid and (B) a compound which is capable of generating an acid by irradiation with an active ray or radiation.
摘要翻译：本发明提供一种消除图案上的边缘粗糙度并提供优异的抗蚀剂图案轮廓的高灵敏度化学放大正性抗蚀剂组合物。提供了一种新型的正性抗蚀剂组合物，其包含（A）含有由至少一个含有由通式（pI）至（pVI）表示的脂环族烃部分并且单体组分含量为5的部分保护的碱溶性基团的树脂通过凝胶渗透色谱法（GPC）确定的总图案面积的百分比或更少，其通过酸的作用相对于碱性显影剂的溶液速度增加，和（B）能够产生酸的化合物用活性射线或辐射照射。

7. 发明授权

US06576392B1 Positive photoresist composition 有权
标题翻译：正光致抗蚀剂组合物
公开(公告)号：US06576392B1
公开(公告)日：2003-06-10
申请号：US09456827
申请日：1999-12-06
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hidekazu Ohashi
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hidekazu Ohashi
IPC分类号： G03C173
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： A positive photoresist composition comprising a photo-acid gererator and a specific resin. The resin contains repeating units each having a group represented by formula (I): —SO2—O—R wherein R represents an optionally substituted alkyl, cycloalkyl, or alkenyl group and comes to have an increased rate of dissolution in an alkaline developing solution by the action of an acid, or contains alkali-soluble groups protected by partial structures containing an alicyclic hydrocarbon and represented by at least one of formulae (pI) to (pVI) defined in the specification and which decomposes by the action of an acid to have enhanced solubility in an alkali. The latter is used in combination with a compound which decomposes by the action of an acid to generate a sulfonic acid.
摘要翻译：一种正型光致抗蚀剂组合物，其包含光酸注射器和特定树脂。树脂含有各自具有由式（I）表示的基团的重复单元：其中R表示任选取代的烷基，环烷基或烯基，并且通过酸的作用使碱显影溶液的溶解速率增加，或含有由说明书中定义的至少一种式（pI）至（pVI）表示的含有脂环族烃的部分结构保护的碱溶性基团，其通过酸的作用而分解，从而具有增强的在碱中的溶解度。后者与通过酸的作用分解以产生磺酸的化合物组合使用。

8. 发明授权

US06517991B1 Positive photosensitive composition 失效
公开(公告)号：US06517991B1
公开(公告)日：2003-02-11
申请号：US09606681
申请日：2000-06-30
申请人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
发明人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai
IPC分类号： G03F7004
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/111
摘要： A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance. Further, the positive photosensitive composition exhibits high sensitivity, good resolution and good pattern profile when far ultraviolet light having a wavelength of 250 nm or less, particularly 220 nm or less (especially an ArF excimer laser beam) is employed as an exposure light source, and thus it can be effectively employed for the formation of fine pattern necessary for the production of semiconductor elements.

9. 发明授权

US06699635B1 Positive photosensitive composition 有权
标题翻译：正光敏组合物
公开(公告)号：US06699635B1
公开(公告)日：2004-03-02
申请号：US09471007
申请日：1999-12-23
申请人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai , Yasumasa Kawabe
发明人： Kunihiko Kodama , Kenichiro Sato , Toshiaki Aoai , Yasumasa Kawabe
IPC分类号： G03F7004
CPC分类号： G03F7/0048 , G03F7/0397 , Y10S430/106
摘要： A positive photosensitive composition suitable for resist pattern formation under exposure to far ultraviolet light of wavelengths of 250 nm or shorter, particularly 220 nm or shorther, comprising: (A) a resin comprising constitutional repeating units wherein particular ring structures are present and having groups capable of decomposing under the action of an acid to cause an increase of the solubility in an alkali developer, (B) a photo-acid generator capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a fluorine-containing surfactant, a silicon-containing surfactant or a mixture thereof.
摘要翻译：适合于在暴露于波长为250nm或更短，特别是220nm或更短的远紫外光下的抗蚀剂图案形成的正性感光性组合物，其包含：（A）包含结构重复单元的树脂，其中存在特定的环结构并具有基团在酸的作用下分解，导致碱显影剂溶解度的增加，（B）能够在用光化学射线或辐射照射时产生酸的光酸发生剂，（C）含氟表面活性剂，含硅表面活性剂或其混合物。

10. 发明授权

US06479211B1 Positive photoresist composition for far ultraviolet exposure 有权
标题翻译：用于远紫外线曝光的正光致抗蚀剂组合物
公开(公告)号：US06479211B1
公开(公告)日：2002-11-12
申请号：US09577884
申请日：2000-05-25
申请人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hajime Nakao
发明人： Kenichiro Sato , Kunihiko Kodama , Toshiaki Aoai , Hajime Nakao
IPC分类号： G03F7039
CPC分类号： G03F7/0397 , G03F7/0048 , Y10S430/106
摘要： A positive photoresist composition for far ultraviolet exposure is disclosed, comprising a compound capable of generating an acid upon irradiation with actinic rays or radiation and a resin having a repeating unit represented by formula (I) and being capable of decomposing under the action of an acid to increase the solubility in alkali. The positive photoresist composition of the present invention may further comprise a fluorine-containing and/or silicon-containing surfactant, an acid decomposable resin, a compound capable of decomposing under the action of an acid to generate a sulfonic acid, and/or a specific solvent, according to the objects.
摘要翻译：公开了一种用于远紫外线曝光的正性光致抗蚀剂组合物，其包含能够在光化射线或辐射照射时能够产生酸的化合物和具有由式（I）表示的重复单元并且能够在酸的作用下分解的树脂以增加在碱中的溶解度。本发明的正型光致抗蚀剂组合物可以进一步包含含氟和/或含硅表面活性剂，可酸分解树脂，能够在酸的作用下分解以产生磺酸的化合物和/或特定的溶剂，根据目的。

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