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21. 发明授权

US5945681A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
公开(公告)号：US5945681A
公开(公告)日：1999-08-31
申请号：US826421
申请日：1997-03-27
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

22. 发明授权

US5788482A Sintering method of cement clinkers and sintering apparatus of the same 失效
标题翻译：水泥熟料和烧结设备的烧结方法
公开(公告)号：US5788482A
公开(公告)日：1998-08-04
申请号：US822717
申请日：1997-03-25
申请人： Isao Hashimoto , Shozo Kanamori , Mikio Murao , Norio Yokota , Nichitaka Sato , Katsuji Mukai
发明人： Isao Hashimoto , Shozo Kanamori , Mikio Murao , Norio Yokota , Nichitaka Sato , Katsuji Mukai
IPC分类号： C04B7/45 , F27B15/00 , F27B15/09
CPC分类号： C04B7/45 , F27B15/00 , F27B15/09
摘要： An apparatus for sintering a cement clinker in which preheated powdered raw materials are granulated and sintered in a single fluidized bed granulating and sintering furnace. The apparatus includes a first classifying station having a discharging grooved portion extending from the fluidized bed furnace to an opening in a radial direction and communicating with a gas distributor. The space above the discharging grooved portion diverges from the opening to a fluidized bed upstream of the gas distributor so that the total velocity of air blown through the opening and from nozzles in the discharging groove is constant. A second classifying station is in communication with the opening for blowing back small particles to the fluidized bed. In a third classifying station, a discharge chute is connected to a fluidized bed cooling unit for quenching granulated and sintered clinker while small particles are blown back to the granulating and sintering furnace.
摘要翻译：一种用于烧结水泥熟料的装置，其中预热的粉末原料在单一流化床造粒和烧结炉中造粒和烧结。该设备包括：第一分级站，具有从流化床炉道延伸到径向开口并与气体分配器连通的排放槽部分。排放沟槽部分上方的空间从气体分配器上游的开口向流化床发散，使得通过开口吹出的空气的总速度和从排出槽中的喷嘴的总速度是恒定的。第二分类站与开口连通，将小颗粒吹回流化床。在第三分选站中，将排料槽连接到流化床冷却单元，用于将颗粒和烧结熟料淬火，同时将小颗粒吹回制粒和烧结炉。

23. 发明授权

US5753923A Ion injection device and method therefor 失效
标题翻译：离子注入装置及其方法
公开(公告)号：US5753923A
公开(公告)日：1998-05-19
申请号：US654601
申请日：1996-05-29
申请人： Kazuo Mera , Isao Hashimoto , Yasuo Yamashita , Minoru Fujimoto , Kouji Ishiguro
发明人： Kazuo Mera , Isao Hashimoto , Yasuo Yamashita , Minoru Fujimoto , Kouji Ishiguro
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J2237/20228
摘要： An ion injection device is provided which permits ion injection into a wafer with an optimum ion beam injection angle, and the ion injection device is characterized, by the provision of a wafer holding means for holding a wafer into which ion beam taken out from an ion source is implanted; a relative position varying means for varying the relative position between the wafer holding means and the ion beam within a plane substantially perpendicular to the direction of the ion beam; and an incidence angle varying means for varying an incidence angle of the ion beam on the surface of the wafer held on the wafer holding means. More specifically, the wafer holding means is a rotatable disk which holds a plurality of wafers on the circumference thereof, and the relative position varying means is constituted by a rotating means which causes the rotatable disk to rotate in a plane substantially perpendicular to the direction of the ion beam and by a rocking means for rocking the rotatable disk in a plane substantially perpendicular to the direction of the ion beam.
摘要翻译：提供一种离子注入装置，其允许以最佳离子束注入角将离子注入晶片，并且离子注入装置的特征在于，通过提供用于保持晶片的晶片保持装置，离子束从离子源植入; 相对位置变化装置，用于在基本垂直于离子束方向的平面内改变晶片保持装置和离子束之间的相对位置; 以及用于改变保持在晶片保持装置上的晶片的表面上的离子束的入射角的入射角变化装置。更具体地说，晶片保持装置是在圆周上保持多个晶片的可旋转盘，并且相对位置变化装置由旋转装置构成，该旋转装置使得可旋转盘在基本上垂直于离子束和用于在基本上垂直于离子束的方向的平面中摆动可旋转盘的摆动装置。

24. 发明授权

US4684069A Classifier and controller for vertical mill 失效
标题翻译：立式磨机分选机和控制器
公开(公告)号：US4684069A
公开(公告)日：1987-08-04
申请号：US764437
申请日：1985-08-12
申请人： Isao Hashimoto , Tosuke Kinoshita , Masahiro Uchida , Susumu Uchiyama
发明人： Isao Hashimoto , Tosuke Kinoshita , Masahiro Uchida , Susumu Uchiyama
IPC分类号： B07B7/083 , B02C15/00 , B02C15/04 , B02C23/32 , B02C25/00 , B02C4/28
CPC分类号： B02C15/04 , B02C23/32 , B02C25/00 , B02C2015/002
摘要： A vertical mill, a classifier for the mill, and a controller for the classifier. The vertical mill includes a casing having a top plate, and the classifier is adjacent the top plate. Beneath the top plate, upon which impinges an upwardly moving gas and powdery material being supplied from the lower portion of the casing, are provided a plurality of rotary blades or rotary rods which have a vertical axis of rotation. A gap is provided between the rotary blades and the top plate, and an annular impingement member is suspended from the top of the casing to outwardly surround the plurality of rotary blades in such a way as to shield the gap. Further, an opening is provided adjacent the impingement member through which a portion of the gas and powdery material pass. The controller of the classifier includes means for adjusting the opening through which the powdery material passes. A collecting device is provided for collecting powdery material from the classifier, including a detector for detecting the distribution of the particle sizes of the powdery material received by the collecting device and giving an output related to the distribution. A mechanism for adjusting the flow area of the opening in response to the output is also provided.
摘要翻译：立式磨机，磨机分级机，分选机控制器。立式磨机包括具有顶板的壳体，并且分级器邻近顶板。在顶板之下，设有从壳体下部供给的向上移动的气体和粉状材料，其具有垂直旋转轴线的多个旋转叶片或旋转杆。在旋转叶片和顶板之间提供间隙，并且环形冲击构件从外壳的顶部悬挂以向外围绕多个旋转叶片，以便屏蔽间隙。此外，在撞击构件附近设置有开口，气体和粉末材料的一部分通过该开口通过。分选机的控制器包括用于调节粉状材料通过的开口的装置。提供了一种收集装置，用于从分粒机收集粉状材料，包括用于检测由收集装置接收的粉末材料的粒度分布的检测器，并给出与分配相关的输出。还提供了用于响应于输出来调节开口的流动面积的机构。

25. 发明授权

US4323505A Polyalkylhydroxychromene and process for preparing the same 失效
标题翻译：聚烷基羟基色烯及其制备方法
公开(公告)号：US4323505A
公开(公告)日：1982-04-06
申请号：US163660
申请日：1980-06-27
申请人： Isao Hashimoto , Hirohiko Nambu
发明人： Isao Hashimoto , Hirohiko Nambu
IPC分类号： A01N43/14 , A01N43/16 , A01N57/16 , C07D311/58 , C07D311/60 , C08F34/00 , C08F134/02 , C08F234/02 , C07D311/70 , C07D311/04
CPC分类号： C07D311/58 , A01N43/16 , A01N57/16 , C07D311/60
摘要： A compound of the formula (I) ##STR1## wherein R.sup.1 and R.sup.5 each represents an alkyl group having 1 to 3 carbon atoms; R.sup.2, R.sup.3 and R.sup.4 each represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms and wherein the bonding at the 2-3 position is a single bond and that at the 3-4 position is a double when the substitution of hydroxy group is at the 5-position or the bonding at the 2-3 position is a double bond and that at the 3-4 position is a single bond when the substitution of hydroxy group is at the 7-position; with the proviso that R.sup.2 and R.sup.4 should not be a hydrogen atom or an alkyl group simultaneously and process for preparing same are disclosed. The compound is useful as a herbicide and fungicide and as an intermediate for preparing agricultural chemicals, etc.
摘要翻译：式（I）的化合物其中R 1和R 5各自表示具有1至3个碳原子的烷基; R 2，R 3和R 4各自表示氢原子或碳原子数1〜3的烷基，其中2-3位的键合为单键，当3-4位的羟基取代时为3-4 组位于5位或2-3位上的键合为双键，当羟基的取代位于7位时，3-4位为单键; 条件是R2和R4不应同时为氢原子或烷基，同时公开制备方法。该化合物可用作除草剂和杀真菌剂以及用作制备农药等的中间体。

26. 发明申请

US20130220987A1 LAYERED HEAT EXCHANGER, HEAT MEDIUM HEATING APPARATUS AND VEHICLE AIR-CONDITIONING APPARATUS USING THE SAME 审中-公开
标题翻译：分层热交换器，加热加热装置和使用该装置的车辆空气调节装置
公开(公告)号：US20130220987A1
公开(公告)日：2013-08-29
申请号：US13818886
申请日：2011-11-16
申请人： Takamitsu Himeno , Satoshi Kominami , Yasunobu Zyoubouji , Isao Hashimoto
发明人： Takamitsu Himeno , Satoshi Kominami , Yasunobu Zyoubouji , Isao Hashimoto
IPC分类号： F28F3/14
CPC分类号： F28F3/14 , B60H1/2221 , F24H1/121 , F24H3/085 , F24H9/14 , F24H9/146 , F24H2250/04 , F28D9/0075 , H05B3/24 , H05B2203/02 , H05B2203/023
摘要： Provided are a layered heat exchanger that can prevent deterioration of sealing property due to deformation of sealing portions of inlet and outlet header sections when a PTC heater is sandwiched between flat heat exchanger tubes, and is pressed to be brought into close contact with the flat heat exchanger tubes, and a heat medium heating apparatus and a vehicle air-conditioning apparatus using the layered heat exchanger.
摘要翻译：提供一种层状热交换器，其可以防止当PTC加热器夹在平面热交换器管之间时由于入口和出口集管部分的密封部分的变形而引起的密封性能的劣化，并被压制以与平坦热量紧密接触热交换器管，热介质加热装置和使用层叠式热交换器的车辆空调装置。

27. 发明授权

US06664346B2 Protective film and method for preparing same 失效
公开(公告)号：US06664346B2
公开(公告)日：2003-12-16
申请号：US09736010
申请日：2000-12-13
申请人： Katsuaki Tsutsumi , Isao Hashimoto
发明人： Katsuaki Tsutsumi , Isao Hashimoto
IPC分类号： C08F242
CPC分类号： B32B27/08 , B32B27/32 , B32B27/36 , B32B2323/04 , B32B2367/00 , C08J5/18 , C08J2323/06 , G03F7/11 , Y10T428/265 , Y10T428/31938
摘要： A high-quality protective film for a dry film resist is provided. A film of a polyethylene is used as the protective film, the polyethylene being prepared by pressurizing ethylene with use of an ultra-high pressure compressor and then polymerizing the ethylene at a reaction temperature of 190° to 300° C. and a reaction pressure of not lower than 167 MPa in the presence of a radical polymerization initiator, or by pressuring ethylene with use of an ultra-high pressure compressor and then polymerizing the ethylene at a reaction temperature of 190° to 300° C. in the presence of a radical polymerization initiator while allowing a radical polymerization inhibitor to be present in the reaction system.

28. 发明授权

US06635998B2 Ion beam processing apparatus and method of operating ion source therefor 失效
标题翻译：离子束处理装置及其离子源的操作方法
公开(公告)号：US06635998B2
公开(公告)日：2003-10-21
申请号：US10261781
申请日：2002-10-02
申请人： Shigeru Tanaka , Isao Hashimoto
发明人： Shigeru Tanaka , Isao Hashimoto
IPC分类号： H01J2702
CPC分类号： H01J37/317 , H01J27/08 , H01J2237/0041 , H01J2237/04756 , H01J2237/08
摘要： An ion beam processing apparatus and a method of operating an ion source therefore are provided for reducing the frequency of breakdown due to particles, and for increasing an apparatus available time by operating the apparatus in a stable state for a long time and minimizing maintenance operations such as cleaning for the apparatus, and so on. A plasma generating gas is introduced into a vacuum chamber formed of a processing chamber and an ion source mounted thereto to produce a plasma from the gas, and an electric field is applied within the vacuum chamber to extract ions within the plasma as an ion beam. The ion source comprises an arc power supply, an acceleration power supply for applying an acceleration electrode with a positive potential to extract an ion beam, and a deceleration power supply for applying a deceleration electrode with a negative potential to prevent ions from flowing into the ion source. When the ion source is operated, the acceleration electrode is first applied with the positive potential, and then the deceleration electrode is applied with the negative potential.
摘要翻译：因此，提供离子束处理装置和操作离子源的方法，用于减少由于颗粒引起的击穿频率，并且通过长时间操作该装置处于稳定状态并使维护操作最小化来增加设备可用时间作为设备的清洁等。将等离子体产生气体引入到由处理室形成的真空室和安装在其上的离子源，以从气体产生等离子体，并且在真空室内施加电场以提取等离子体内的离子作为离子束。离子源包括电弧电源，用于施加正电位的加速电极以提取离子束的加速电源，以及用于施加具有负电位的减速电极的减速电源，以防止离子流入离子资源。当离子源运行时，首先施加正电位的加速电极，然后减速电极施加负电位。

29. 发明授权

US06332947B1 Plasma processing apparatus and plasma processing method using the same 失效
标题翻译：等离子体处理装置和使用其的等离子体处理方法
公开(公告)号：US06332947B1
公开(公告)日：2001-12-25
申请号：US09245086
申请日：1999-02-05
申请人： Satoshi Ichimura , Tadashi Sato , Isao Hashimoto
发明人： Satoshi Ichimura , Tadashi Sato , Isao Hashimoto
IPC分类号： H05H100
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32688
摘要： A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field. This cusped magnetic field falls steeply from a position of electron cyclotron resonance magnetic field strength to a boundary portion between the electron heating space chamber and the plasma generating space chamber and its direction is reversed to that of the strong magnetic field with decreasing distance from the boundary portion between the electron heating space chamber and the plasma generating space chamber to the plasma generating space chamber. A second static magnetic field generating device is provided with permanent magnets arranged around the plasma generating space chamber. Adjacent ones of the permanent magnets have polarities opposite to each other.
摘要翻译：等离子体处理装置设置有至少一个用于引入微波的波导部分，形成在波导部分中的介电体的下游侧的电子加热空间室，以及与电子加热空间室。第一静磁场产生装置使用永磁体围绕电子加热空间室，沿着电子加热空间室中的微波的传播方向产生超过电子回旋共振磁场强度的强磁场和微波输出电介质体的一部分，并且形成一个可选的磁场。该电磁场强度从电子回旋共振磁场强度的位置急剧下降到电子加热空间室和等离子体发生空间室之间的边界部分，并且其方向与强磁场的方向相反，与边界的距离减小电子加热空间室和等离子体产生空间室之间的部分到等离子体产生空间室。第二静磁场产生装置设置有围绕等离子体产生空间室布置的永磁体。相邻的永磁体具有彼此相反的极性。

30. 发明授权

US6104025A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
标题翻译：离子注入装置能够防止在晶片背面产生放电缺陷
公开(公告)号：US6104025A
公开(公告)日：2000-08-15
申请号：US314303
申请日：1999-05-19
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.
摘要翻译：当硅晶片在超过300℃的温度下离子注入时，离子注入装置能够防止在硅晶片的背面出现放电缺陷。离子注入装置的离子电流为10mA至100 以及用于将电子束照射到硅晶片的反面上的电子束产生装置。控制电子束，使得在晶片和支撑晶片的旋转盘之间流动的电流基本上为零。

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