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1. 发明授权

US6104025A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
标题翻译：离子注入装置能够防止在晶片背面产生放电缺陷
公开(公告)号：US6104025A
公开(公告)日：2000-08-15
申请号：US314303
申请日：1999-05-19
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.
摘要翻译：当硅晶片在超过300℃的温度下离子注入时，离子注入装置能够防止在硅晶片的背面出现放电缺陷。离子注入装置的离子电流为10mA至100 以及用于将电子束照射到硅晶片的反面上的电子束产生装置。控制电子束，使得在晶片和支撑晶片的旋转盘之间流动的电流基本上为零。

2. 发明授权

US5945681A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
公开(公告)号：US5945681A
公开(公告)日：1999-08-31
申请号：US826421
申请日：1997-03-27
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

3. 发明授权

US06614190B2 Ion implanter 有权
公开(公告)号：US06614190B2
公开(公告)日：2003-09-02
申请号：US09939749
申请日：2001-08-28
申请人： Hiroyuki Tomita , Kazuo Mera , Isao Hashimoto , Yasunori Nakano , Takayoshi Seki
发明人： Hiroyuki Tomita , Kazuo Mera , Isao Hashimoto , Yasunori Nakano , Takayoshi Seki
IPC分类号： H05B3126
CPC分类号： H01J37/3171 , H01J2237/20 , H01L21/68707
摘要： A wafer holder for holding a wafer includes a wafer holder base, a wafer fixing part, holder pins, a bearing, a housing, and a coil spring. The wafer fixing part is fixed to an outer circumference of a wafer holder. The holder pins are arranged to face the wafer fixing part. The holder pin is rotatably supported by the bearing. The holder pins are movably supported along the diameter direction of the wafer holder base by the coil spring. In the process of holding a side of the wafer with the holder pins, when force from the wafer works on the holder pins, the holder pins are rotated with a Z axis as a center, thus reducing frictional force between the holder pin and the wafer. Accordingly, it is possible to prevent particle generation from holding an implanting object.

4. 发明授权

US5753923A Ion injection device and method therefor 失效
标题翻译：离子注入装置及其方法
公开(公告)号：US5753923A
公开(公告)日：1998-05-19
申请号：US654601
申请日：1996-05-29
申请人： Kazuo Mera , Isao Hashimoto , Yasuo Yamashita , Minoru Fujimoto , Kouji Ishiguro
发明人： Kazuo Mera , Isao Hashimoto , Yasuo Yamashita , Minoru Fujimoto , Kouji Ishiguro
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J2237/20228
摘要： An ion injection device is provided which permits ion injection into a wafer with an optimum ion beam injection angle, and the ion injection device is characterized, by the provision of a wafer holding means for holding a wafer into which ion beam taken out from an ion source is implanted; a relative position varying means for varying the relative position between the wafer holding means and the ion beam within a plane substantially perpendicular to the direction of the ion beam; and an incidence angle varying means for varying an incidence angle of the ion beam on the surface of the wafer held on the wafer holding means. More specifically, the wafer holding means is a rotatable disk which holds a plurality of wafers on the circumference thereof, and the relative position varying means is constituted by a rotating means which causes the rotatable disk to rotate in a plane substantially perpendicular to the direction of the ion beam and by a rocking means for rocking the rotatable disk in a plane substantially perpendicular to the direction of the ion beam.
摘要翻译：提供一种离子注入装置，其允许以最佳离子束注入角将离子注入晶片，并且离子注入装置的特征在于，通过提供用于保持晶片的晶片保持装置，离子束从离子源植入; 相对位置变化装置，用于在基本垂直于离子束方向的平面内改变晶片保持装置和离子束之间的相对位置; 以及用于改变保持在晶片保持装置上的晶片的表面上的离子束的入射角的入射角变化装置。更具体地说，晶片保持装置是在圆周上保持多个晶片的可旋转盘，并且相对位置变化装置由旋转装置构成，该旋转装置使得可旋转盘在基本上垂直于离子束和用于在基本上垂直于离子束的方向的平面中摆动可旋转盘的摆动装置。

5. 发明授权

US5932883A Ion implanter for implanting ion on wafer with low contamination 失效
标题翻译：离子注入机用于在低污染的晶片上植入离子
公开(公告)号：US5932883A
公开(公告)日：1999-08-03
申请号：US886408
申请日：1997-07-01
申请人： Isao Hashimoto , Kazuo Mera
发明人： Isao Hashimoto , Kazuo Mera
IPC分类号： C23C14/48 , H01J37/317 , H01L21/02 , H01L21/265 , H01L21/68 , H01L27/12
CPC分类号： H01L21/68 , H01J37/3171 , H01J2237/20
摘要： In order to implant an ion beam on wafers with low contamination, especially in a large capacity ion implanter for implanting for a long time, a rotating holder 1 shaped like a cylinder or a circular cone is provided, and the wafers 2 are arranged inside of the rotating holder 1 so as to be fixed firmly by a centrifugal force acting on the wafers. Thereby, the wafers are implanted with low contamination, because the periphery of the wafer is not supported by any stopper which may otherwise be sputtered and cause contamination.
摘要翻译：为了将离子束植入到具有低污染的晶片上，特别是在用于长时间植入的大容量离子注入机中，提供了一种形状如圆筒或圆锥形的旋转保持器1，并且晶片2布置在旋转保持器1，以通过作用在晶片上的离心力牢固地固定。因此，由于晶片的周边不被任何可能被溅射并导致污染的塞子支撑，因此植入了低污染的晶片。

6. 发明授权

US06501080B1 Ion implanting apparatus and sample processing apparatus 失效
标题翻译：离子注入装置和样品处理装置
公开(公告)号：US06501080B1
公开(公告)日：2002-12-31
申请号：US09461222
申请日：1999-12-16
申请人： Hiroyuki Tomita , Kazuo Mera
发明人： Hiroyuki Tomita , Kazuo Mera
IPC分类号： G21K510
CPC分类号： H01J37/3171 , H01J2237/2001
摘要： Heat energy produced for heating is absorbed into a silicon wafer, and thermal deformation of the silicon wafer is prevented. An ion implanting apparatus comprises an ion source for producing an ion beam; a process chamber for containing the silicon wafer; a rotating body disposed and rotated in the process chamber; a holding means for holding the silicon wafer of an object to be ion-implanted with a spacing between an ion implanted area of the object to be ion-implanted and the holding means, the holding means being connected to the rotating body; and a heating means for heating the silicon wafer in the process chamber, wherein the holding means holds the silicon wafer in a state in contact with a part of a region in an outer peripheral side of the silicon wafer, and blocks the silicon wafer to move toward an acting direction of a centrifugal force.
摘要翻译：用于加热产生的热能被吸收到硅晶片中，并且防止了硅晶片的热变形。离子注入装置包括用于产生离子束的离子源; 用于容纳硅晶片的处理室; 在处理室中设置和旋转的旋转体; 用于将要离子注入的物体的硅晶片保持在待离子物体的离子注入区域与保持装置之间的间隔的保持装置，该保持装置连接到旋转体; 以及用于加热处理室中的硅晶片的加热装置，其中保持装置将硅晶片保持在与硅晶片的外周侧的一部分区域接触的状态，并且阻止硅晶片移动朝向离心力的作用方向。

7. 发明授权

US5157235A Laser marking system 失效
标题翻译：激光打标系统
公开(公告)号：US5157235A
公开(公告)日：1992-10-20
申请号：US658585
申请日：1991-02-21
申请人： Kiyoshi Okumura , Kazuhiko Nishimura , Minoru Fujimoto , Hiroo Ohkawa , Kazuo Mera , Shigeo Shiono
发明人： Kiyoshi Okumura , Kazuhiko Nishimura , Minoru Fujimoto , Hiroo Ohkawa , Kazuo Mera , Shigeo Shiono
IPC分类号： B23K26/00 , B23K26/06
CPC分类号： B23K26/066
摘要： A laser marking system of the present invention is provided with an irradiation position changing device on a laser beam path for changing the irradiation positions of the laser beam corresponding to each marking area when a marking area including a plurality of irradiation marking areas is formed by irradiating the workpiece with the pulse laser beam which has passed a pattern of a mask. The plurality of irradiation marking areas are successively irradiated with the pulse laser beam from an irradiation position to form a marking area. Since the marking area larger than each irradiation marking area can be obtained, the whole laser marking system can be made smaller in size without increasing the output power of the pulse laser generator.
摘要翻译：本发明的激光打标系统在激光束路径上设置有照射位置改变装置，用于当通过照射形成包括多个照射标记区域的标记区域时，改变与每个标记区域对应的激光束的照射位置具有通过掩模图案的脉冲激光束的工件。多个照射标记区域被来自照射位置的脉冲激光束依次照射，形成标记区域。由于可以获得大于每个照射标记区域的标记面积，所以可以使整个激光打标系统的尺寸更小，而不增加脉冲激光发生器的输出功率。

8. 发明授权

US07485874B2 Apparatus for manufacturing semiconductor substrates 有权
标题翻译：半导体基板的制造装置
公开(公告)号：US07485874B2
公开(公告)日：2009-02-03
申请号：US11510277
申请日：2006-08-24
申请人： Seiichi Nakamura , Hideki Nishihata , Riyuusuke Kasamatsu , Kazunori Tsubuku , Akira Bando , Nobuo Tsumaki , Tomoji Watanabe , Kazuo Mera , Tsuneo Hayashi , Yoichi Kurosawa
发明人： Seiichi Nakamura , Hideki Nishihata , Riyuusuke Kasamatsu , Kazunori Tsubuku , Akira Bando , Nobuo Tsumaki , Tomoji Watanabe , Kazuo Mera , Tsuneo Hayashi , Yoichi Kurosawa
IPC分类号： G01N21/00 , G01N23/00 , G21K5/10 , G21K5/08 , H01J37/08 , H01J37/20
CPC分类号： H01J37/3172 , H01J37/20 , H01J2237/2007 , H01L21/68728 , H01L21/68764 , H01L21/68771
摘要： This apparatus for manufacturing semiconductor substrates has support disks and holding units holding semiconductor substrates on the support disks. The holding unit has a stopper which is formed of a conductive material and holds the brim of the semiconductor substrate, a stopper holder which supports the stopper at the outer circumferential portion thereof, a retaining member which retains the stopper to the support disk, and a heating unit which heats the stopper.
摘要翻译：该半导体基板的制造装置具有在支撑盘上保持半导体基板的支撑盘和保持单元。保持单元具有由导电材料形成并保持半导体衬底的边缘的止动件，在其外圆周部分处支撑止动件的止动器保持器，将止动件保持在支撑盘上的保持构件，加热装置加热塞子。

9. 发明授权

US06570171B2 Ion implanter 失效
公开(公告)号：US06570171B2
公开(公告)日：2003-05-27
申请号：US10173426
申请日：2002-06-18
申请人： Hiroyuki Tomita , Kazuo Mera
发明人： Hiroyuki Tomita , Kazuo Mera
IPC分类号： H01J3720
CPC分类号： H01J37/3171 , H01J2237/20 , H01J2237/20228
摘要： An ion implanter comprises an ion source and a wafer support device having a rotary disk that supports a plurality of wafers thereon and is rotated about its center axis, and capable of being swung alternately in opposite directions. An ion beam emitted by the ion source is projected on the wafers for ion implantation. The wafer support device is supported so that the center of gravity of the wafer support device lies below an axis about which the wafer support device is swung alternately in opposite directions and a component of the gravitational acceleration imparted to the wafer support device acts in the same direction as a force applied to the wafer support device to reverse the same.

10. 发明授权

US5045679A Optical path adjusting system with dual-axis wedge prisms 失效
标题翻译：具有双轴楔形棱镜的光路调节系统
公开(公告)号：US5045679A
公开(公告)日：1991-09-03
申请号：US443502
申请日：1989-12-01
申请人： Minoru Suzuki , Kazuo Mera
发明人： Minoru Suzuki , Kazuo Mera
IPC分类号： B23K26/00 , B23K26/04 , B23K26/06 , B23K26/08 , G02B26/08
CPC分类号： B23K26/043 , B23K26/04 , B23K26/08 , B23K26/082 , G02B26/0891
摘要： In an optical path adjusting system, an x-axis wedge prism and a y-axis wedge prism are disposed in opposition to each other on the incident optical path side of a condenser lens to which a laser beam is incident so that the x-axis wedge prism and the y-axis wedge prism are displaceable in the directions of x and y axes of a surface of a work respectivley. A position of irradiation of the laser beam on the condenser lens is detected by a detector and the detected position of irradiation is inputted to a controller. The controller supplies a driver with an error correction signal representing an error of the position of irradiation relative to a reference position. The x-axis wedge prism and the y-axis wedge prism are dispalced by the driver so that the laser beam is corrected to be parallel to an optical axis of the condenser lens.
摘要翻译：在光路调整系统中，x轴楔形棱镜和y轴楔形棱镜在激光束入射的聚光透镜的入射光路侧彼此相对设置，使得x轴楔形棱镜和y轴楔形棱镜可以在工件表面的x和y轴的方向上移位。通过检测器检测激光束在聚光透镜上的照射位置，将检测到的照射位置输入到控制器。控制器为驱动器提供表示相对于参考位置的照射位置的误差的纠错信号。 x轴楔形棱镜和y轴楔形棱镜由驱动器分离，使得激光束被校正为平行于聚光透镜的光轴。

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