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21. 发明申请

US20050201139A1 Memory Device 审中-公开
标题翻译：存储设备
公开(公告)号：US20050201139A1
公开(公告)日：2005-09-15
申请号：US11121011
申请日：2005-05-04
申请人： Yasuhiro Shimada , Yoshihisa Kato , Keisuke Tanaka , Daisuke Ueda
发明人： Yasuhiro Shimada , Yoshihisa Kato , Keisuke Tanaka , Daisuke Ueda
IPC分类号： H01L27/105 , G11C11/22 , H01L21/02 , H01L21/316 , H01L21/8246 , H01L27/10 , H01L27/108 , H01L27/115
CPC分类号： H01L27/11507 , H01L21/31691 , H01L27/11502 , H01L28/55
摘要： A memory device includes memory cells each having a capacitor including a lower electrode, a ferroelectric film and an upper electrode which are formed in this order over a substrate made of silicon. The ferroelectric film is selectively grown on the lower electrode. Such selective formation of the ferroelectric film on the lower electrode having a desired shape prevents a damaged portion from occurring in the ferroelectric film, thus making it possible to downsize the memory cells.
摘要翻译：存储器件包括存储单元，每个存储单元具有在由硅制成的衬底上依次形成的下电极，铁电体膜和上电极的电容器。在下电极上选择性地生长强电介质膜。在具有所需形状的下电极上选择性地形成铁电体膜，可防止在铁电体膜中发生损坏部分，从而可以使存储单元小型化。

22. 发明申请

US20050118910A1 Base material for laminate and process for producing the same 审中-公开
标题翻译：层压板用基材及其制造方法
公开(公告)号：US20050118910A1
公开(公告)日：2005-06-02
申请号：US11030985
申请日：2005-01-10
申请人： Hiroyoshi Ueno , Yoshihisa Kato , Isao Ichioka , Takekazu Adachi , Mamoru Murata , Hirokazu Hiraoka , Manabu Ochida , Masayuki Noda
发明人： Hiroyoshi Ueno , Yoshihisa Kato , Isao Ichioka , Takekazu Adachi , Mamoru Murata , Hirokazu Hiraoka , Manabu Ochida , Masayuki Noda
IPC分类号： B32B5/02 , B32B5/26 , B32B37/10 , C08J5/24 , D21H13/26 , D21H17/52 , D21H21/18 , D21H25/06 , D21H27/00 , D21H27/30 , H05K1/03 , D04H3/08 , B32B31/26
CPC分类号： B32B5/26 , B32B5/022 , B32B15/14 , B32B15/20 , B32B37/00 , B32B37/10 , B32B38/0036 , B32B38/16 , B32B38/164 , B32B2260/021 , B32B2260/046 , B32B2262/0269 , B32B2305/28 , B32B2309/02 , B32B2311/12 , B32B2398/10 , B32B2457/08 , D21H13/26 , D21H17/52 , D21H21/18 , D21H25/06 , D21H27/30 , H05K1/0366 , H05K2201/0278 , H05K2201/0293 , H05K2203/1105 , Y10T428/249925 , Y10T428/249998 , Y10T428/31725 , Y10T428/31728 , Y10T442/20 , Y10T442/2951 , Y10T442/60 , Y10T442/696 , Y10T442/697 , Y10T442/699
摘要： The present invention is to provide a base material for a laminate having a high strength, reduced thickness, and light weight. In the present invention, a base material is prepared by incorporating a thermosetting resin binder into a non-woven fabric of para-aramid fibers prepared by a wet type paper making, and then heating a plurality of the resultant non-woven fabric sheets under pressure. The non-woven fabric sheet comprises 95 to 70 mass % of the para-aramid fibers and 5 to 30 mass % of the thermosetting resin binder.
摘要翻译：本发明提供一种具有高强度，低厚度和轻质量的层压体的基材。在本发明中，通过将热固性树脂粘合剂结合到通过湿式造纸制备的对位芳族聚酰胺纤维的无纺织物中，然后在压力下加热多个所得的无纺布片材来制备基材。无纺布片包含95〜70质量％的对位芳族聚酰胺纤维和5〜30质量％的热固性树脂粘合剂。

23. 发明授权

US06787830B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06787830B2
公开(公告)日：2004-09-07
申请号：US09804311
申请日：2001-03-13
申请人： Yasuhiro Shimada , Yoshihisa Kato
发明人： Yasuhiro Shimada , Yoshihisa Kato
IPC分类号： H01L2972
CPC分类号： G11C11/22 , H01L27/105 , H01L27/11585 , H01L27/1159 , H01L27/11592 , H01L29/6684 , H01L29/78391
摘要： A gate electrode and a gate insulating film are formed for each of PMOSFET, NMOSFET and ferroelectric FET. Source/drain regions are defined for the NMOSFET and ferroelectric FET and for the PMOSFET by performing ion implantation processes twice separately. An intermediate electrode connected to the gate electrode of the ferroelectric FET, a ferroelectric film and a control gate electrode are formed over a first interlevel dielectric film. An interconnect layer, which includes first and second interconnects and is connected to the gate electrodes of the CMOS device, is formed on a second interlevel dielectric film. The first and second interconnects are connected to the control gate and intermediate electrodes of the ferroelectric FET, respectively.
摘要翻译：为PMOSFET，NMOSFET和铁电FET中的每一个形成栅极电极和栅极绝缘膜。通过两次分别进行离子注入工艺，为NMOSFET和铁电FET以及PMOSFET定义源/漏区。在第一层间绝缘膜上形成连接到铁电FET的栅极的中间电极，铁电体膜和控制栅电极。包括第一和第二互连并连接到CMOS器件的栅电极的互连层形成在第二层间绝缘膜上。第一和第二互连分别连接到铁电FET的控制栅极和中间电极。

24. 发明授权

US06771530B2 Semiconductor memory and method for driving the same 失效
标题翻译：半导体存储器及其驱动方法
公开(公告)号：US06771530B2
公开(公告)日：2004-08-03
申请号：US09886972
申请日：2001-06-25
申请人： Yoshihisa Kato , Yasuhiro Shimada
发明人： Yoshihisa Kato , Yasuhiro Shimada
IPC分类号： G11C1122
CPC分类号： G11C11/22 , H01L27/11502 , H01L29/78391
摘要： A method for driving a semiconductor memory including a field effect transistor having a gate electrode formed on a ferroelectric film includes the steps of writing a data in the semiconductor memory by changing a polarized state of the ferroelectric film by applying a voltage to the gate electrode, and reading a data written in the semiconductor memory by detecting a current change appearing between a drain and a source of the field effect transistor by applying a voltage between the drain and the source of the field effect transistor with a voltage applied to the gate electrode. The magnitude of the voltage applied between the drain and the source of the field effect transistor in the step of reading a data is set within a range where a drain-source current of the field effect transistor increases as a drain-source voltage thereof increases.
摘要翻译：一种用于驱动半导体存储器的方法，该半导体存储器包括具有形成在铁电体膜上的栅电极的场效应晶体管，包括以下步骤：通过向栅电极施加电压来改变强电介质膜的极化状态，从而在半导体存储器中写入数据，以及通过在所述场效应晶体管的漏极和源极之间施加施加到所述栅电极的电压的电压来检测出现在所述场效应晶体管的漏极和源极之间的电流变化来读取写入所述半导体存储器中的数据。在读取数据的步骤中施加在场效应晶体管的漏极和源极之间的电压的幅度被设定在场效应晶体管的漏 - 源电流随着其漏 - 源电压增加而增加的范围内。

25. 发明授权

US06601807B1 Mounting structure of thermal shield for oil pump 失效
标题翻译：油泵隔热罩安装结构
公开(公告)号：US06601807B1
公开(公告)日：2003-08-05
申请号：US09629625
申请日：2000-07-31
申请人： Shigemi Takahashi , Takashi Imanishi , Masayuki Sekine , Shuji Nakamura , Yoshihisa Kato
发明人： Shigemi Takahashi , Takashi Imanishi , Masayuki Sekine , Shuji Nakamura , Yoshihisa Kato
IPC分类号： F16M100
CPC分类号： B62D5/062
摘要： It is an object of the present invention to provide a mounting structure of a thermal shield for an oil pump which makes it possible to securely mount the thermal shield at one point with high reliability and at a low cost. To achieve this object, a thermal shield for preventing radiant heat from an exhaust pipe from being transmitted to an oil pump is securely clamped to a support plate portion of a bracket which is disposed contiguous to the thermal shield. The thermal shield and the bracket are provided with an engaging protrusion portion and a positioning hole respectively. The thermal shield and the bracket are positioned through engagement of the engaging protrusion portion with the positioning hole.
摘要翻译：本发明的目的是提供一种用于油泵的隔热罩的安装结构，其使得可以以高可靠性和低成本将热屏蔽件牢固地安装在一个点上。为了实现这一目的，用于防止来自排气管的辐射热被传递到油泵的热屏蔽件被牢固地夹紧到与热屏蔽件邻接设置的支架的支撑板部分。热屏蔽和支架分别设有接合突出部分和定位孔。热屏蔽和支架通过接合突起部分与定位孔的接合而定位。

26. 发明授权

US06455883B2 Nonvolatile semiconductor memory 失效
标题翻译：非易失性半导体存储器
公开(公告)号：US06455883B2
公开(公告)日：2002-09-24
申请号：US09879081
申请日：2001-06-13
申请人： Yoshihisa Kato , Yasuhiro Shimada
发明人： Yoshihisa Kato , Yasuhiro Shimada
IPC分类号： H01L2972
CPC分类号： H01L29/78391
摘要： A source region and a drain region are formed in a silicon substrate, a dielectric film is formed above a region of the silicon substrate between the source region and the drain region, a ferroelectric film is formed on the dielectric film, and a gate electrode is formed on the ferroelectric film. The ferroelectric film and the silicon substrate have a first conductivity type, and the source region and the drain region has a second conductivity type.
摘要翻译：在硅衬底中形成源区和漏区，在源极区和漏区之间的硅衬底的区域的上方形成电介质膜，在电介质膜上形成铁电膜，栅电极为形成在铁电薄膜上。铁电体膜和硅衬底具有第一导电类型，并且源极区和漏极区具有第二导电类型。

27. 发明授权

US06438021B1 Methods of reading and writing data from/ on semiconductor memory device, and method for driving the device 有权
公开(公告)号：US06438021B1
公开(公告)日：2002-08-20
申请号：US09800478
申请日：2001-03-08
申请人： Yoshihisa Kato
发明人： Yoshihisa Kato
IPC分类号： G11C1122
摘要： In a semiconductor memory device in which a ferroelectric capacitor is connected to the gate of a field effect transistor (FET), a gate charge at the threshold voltage (Vti) of the FET is represented as Qti. In a polarization-voltage characteristic exhibited by the ferroelectric capacitor where a voltage applied thereto starts to be increased on the supposition that a polarization of 0 C/cm2 initially exists in the capacitor, a voltage, associated with a polarization value corresponding to Qti, is represented as Vtf. In a read operation, the intersection between the gate charge-gate voltage characteristic of the FET and the polarization-voltage characteristic of the ferroelectric capacitor is the operating point where a worst-case polarization of 0 C/cm2 exists in the capacitor after data has been retained in the capacitor. By applying a voltage Vtf+ Vti to the control electrode, the data can be read out correctly until the polarization decreases to reach 0 C/cm2.

28. 发明授权

US06339971B1 Pedal supporting structure of a vehicle 失效
标题翻译：车辆的踏板支撑结构
公开(公告)号：US06339971B1
公开(公告)日：2002-01-22
申请号：US08818452
申请日：1997-03-17
申请人： Yoshihisa Kato
发明人： Yoshihisa Kato
IPC分类号： G05G114
CPC分类号： G05G1/32 , B60R21/09 , B60T7/065 , Y10T74/20528 , Y10T74/20888
摘要： A pedal supporting structure in which a pedal is prevented from being moved in a direction toward a passenger compartment if a deformation occurs in a dash panel in the direction toward the passenger compartment. A pedal bracket pivotally supports a lever portion of the pedal. A connection mechanism disengageably engages a portion of the pedal bracket to a body member located near the pedal bracket. A guiding mechanism guides movement of the pedal bracket so that the movement of the pedal bracket causes movement of the pedal relative to the body member in a rear-to-front direction of the vehicle.
摘要翻译：一种踏板支撑结构，其中如果在仪表板上朝向乘客舱的方向发生变形，则防止踏板朝向乘客室的方向移动。踏板支架枢转地支撑踏板的杆部分。连接机构将踏板支架的一部分可分离地接合到位于踏板支架附近的主体构件。引导机构引导踏板支架的运动，使得踏板支架的运动引起踏板相对于车身构件在车辆的后后方向上的移动。

29. 发明授权

US06261414B1 Laminate base material, method of preparing the same, prepreg and laminate 失效
标题翻译：层压基材，其制备方法，预浸料和层压板
公开(公告)号：US06261414B1
公开(公告)日：2001-07-17
申请号：US09185575
申请日：1998-11-04
申请人： Yoshihisa Kato , Takekazu Adachi , Mamoru Murata
发明人： Yoshihisa Kato , Takekazu Adachi , Mamoru Murata
IPC分类号： D21H1326
CPC分类号： B32B5/26 , B32B5/022 , B32B5/28 , B32B2260/021 , B32B2260/046 , B32B2262/0269 , B32B2457/08 , C08J5/048 , C08J5/24 , C08J2361/06 , H05K1/0366 , H05K2201/0145 , H05K2201/0166 , H05K2201/0278 , H05K2201/0293 , H05K2203/1105 , Y10T428/12569 , Y10T428/31594 , Y10T428/31725
摘要： The present invention relates to a method of producing a laminate base material useful for preparing a prepreg or a laminate for electronic equipment such as printed board. The method comprises the steps of: (1) preparing a slurry comprising para-aramid fibers and curable phenolic resin fibers; (2) preparing a sheet from said slurry; (3) adding a resin binder to said sheet so as to bond the fibers with each other, thereby to form a combined non-woven fabric and (4) compressing said non-woven fabric under heating. According to the present invention, a prepreg or laminate is obtained which has an improved high-frequency characteristics and much less warp.
摘要翻译：本发明涉及一种制备用于制备诸如印刷电路板之类的电子设备的预浸料或层压材料的层压基材的方法。该方法包括以下步骤：（1）制备包含对位芳族聚酰胺纤维和可固化酚醛树脂纤维的浆料;（2）从所述浆料制备片材;（3）向所述片材中加入树脂粘合剂以粘合纤维从而形成组合的无纺织物，（4）在加热下压缩所述无纺布。根据本发明，获得了具有改善的高频特性和更少翘曲的预浸料或层压材料。

30. 发明授权

US5992867A Suspension arm 失效
标题翻译：悬臂
公开(公告)号：US5992867A
公开(公告)日：1999-11-30
申请号：US698125
申请日：1996-08-15
申请人： Yoshihisa Kato , Kazuhito Imaizumi
发明人： Yoshihisa Kato , Kazuhito Imaizumi
IPC分类号： B60G3/06 , B60G7/00
CPC分类号： B60G3/06 , B60G7/001 , B60G2206/122 , Y10T29/49622
摘要： A suspension arm whose required strength is relatively small and which improves efficiency of space utilization. The arm body of the lower arm of a front suspension has a C-shaped cross section which is open toward the bottom. The top face of the arm body is positioned under a load acting plane. The shear center of cross section of the arm body can be positioned substantially in the vicinity of the load acting plane. A torsion caused by an input load is reduced, so that the arm body has an excellent torsional rigidity. Since the load acting plane is located outside the arm body, a space provided outside the arm body can be increased accordingly. Further, since a required strength of the lower arm can be made smaller, the cross sectional area of the lower arm can be decreased. This decreases the distance between the closed end and the open end of the arm body, thereby providing a sufficiently large space outside the arm body with a resultant improved efficiency of space utilization. This increase in space is advantageous to the positional relationship between the lower arm and a steering gear.
摘要翻译：所需强度相对较小并提高空间利用效率的悬架臂。前悬架的下臂的臂体具有向底部敞开的C形横截面。臂体的顶面位于负载作用平面下方。臂主体的横截面的剪切中心可以基本上位于负载作用平面附近。由输入负载引起的扭转减小，使得臂体具有优异的扭转刚度。由于负载作用平面位于臂主体的外侧，因此可以相应地增加设置在臂体外部的空间。此外，由于可以使下臂的所需强度更小，所以可以减小下臂的横截面积。这减小了臂体的封闭端和开口端之间的距离，从而在臂体外部提供足够大的空间，从而提高了空间利用效率。这种空间的增加有利于下臂与舵机之间的位置关系。

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