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21. 发明授权

US08405996B2 Article including thermal interface element and method of preparation 有权
标题翻译：文章包括热界面元素和制备方法
公开(公告)号：US08405996B2
公开(公告)日：2013-03-26
申请号：US12826337
申请日：2010-06-29
申请人： David Mulford Shaddock , Deng Tao , Hendrik Pieter Jacobus De Bock , Dalong Zhong , Christopher Michael Eastman , Kevin Matthew Durocher , Stanton Earl Weaver, Jr.
发明人： David Mulford Shaddock , Deng Tao , Hendrik Pieter Jacobus De Bock , Dalong Zhong , Christopher Michael Eastman , Kevin Matthew Durocher , Stanton Earl Weaver, Jr.
IPC分类号： H05K7/20
CPC分类号： H01L23/433 , B82Y30/00 , B82Y40/00 , C25D5/022 , C25D7/12 , F28F2013/006 , F28F2255/00 , H01L2924/0002 , Y10T29/49 , Y10T428/30 , H01L2924/00
摘要： An article and method of forming the article is disclosed. The article includes a heat source, a heat-sink, and a thermal interface element having a plurality of freestanding nanosprings, a top layer, and a bottom layer. The nanosprings, top layer, and the bottom layers of the article include at least one inorganic material. The article can be prepared using a number of methods including the methods such as GLAD and electrochemical deposition.
摘要翻译：公开了一种形成物品的制品和方法。该制品包括热源，散热器和具有多个独立纳米脉冲，顶层和底层的热界面元件。制品的纳米螺旋，顶层和底层包括至少一种无机材料。该制品可以使用许多方法制备，包括诸如GLAD和电化学沉积的方法。

22. 发明授权

US07635869B2 Support with recessed electrically conductive chip attachment material for flip-chip bonding a light emitting chip 失效
标题翻译：支持嵌入式导电芯片附件材料，用于倒装芯片接合发光芯片
公开(公告)号：US07635869B2
公开(公告)日：2009-12-22
申请号：US11520905
申请日：2006-09-14
申请人： Boris Kolodin , Michael Hsing , Stanton Earl Weaver, Jr. , Ivan Eliashevich , Srinath K. Aanegola
发明人： Boris Kolodin , Michael Hsing , Stanton Earl Weaver, Jr. , Ivan Eliashevich , Srinath K. Aanegola
IPC分类号： H01L33/00
CPC分类号： H01L33/483 , H01L33/62 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/10253 , H01L2924/00
摘要： In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10′, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36′) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.
摘要翻译：在发光器件中，发光芯片（12,112）包括堆叠的半导体层（14）和设置在半导体层堆叠上的电极（24,141,142）。支撑件（10,10'，110,210）具有以倒装芯片方式支撑发光芯片的大致平坦的表面（30）。导电芯片附接材料（40,41,141,142）凹入到支撑件的大致平坦的表面中，使得附接材料基本不突出在支撑体的大致平坦的表面上方。附着材料提供发光芯片的电极与支撑体的导电路径（36,36'）之间的电连通。可选地，至少半导体层的叠层和发光芯片的电极也凹入到支撑体的大致平坦的表面中。

23. 发明授权

US07572973B2 Method of making devices for solid state thermal transfer and power generation 有权
标题翻译：制造固态热转印和发电装置的方法
公开(公告)号：US07572973B2
公开(公告)日：2009-08-11
申请号：US12328788
申请日：2008-12-05
申请人： Stanton Earl Weaver, Jr. , Robert John Wojnarowski
发明人： Stanton Earl Weaver, Jr. , Robert John Wojnarowski
IPC分类号： H01L35/34 , H02N10/00
CPC分类号： H01L35/32 , Y10T156/1092
摘要： A method of making a solid state thermal transfer device includes first and second electrically conductive substrates that are positioned opposite from one another. The solid state thermal transfer device also includes a sealing layer disposed between the first and second electrically conductive substrates and a plurality of hollow structures having a conductive material, wherein the plurality of hollow structures is contained by the sealing layer between the first and second electrically conductive substrates.
摘要翻译：制造固态热转印装置的方法包括彼此相对定位的第一和第二导电基板。固态热转移装置还包括设置在第一和第二导电基板之间的密封层和具有导电材料的多个中空结构，其中多个中空结构由第一和第二导电底物。

24. 发明授权

US07201497B2 Led lighting system with reflective board 有权
标题翻译：带反光板的LED照明系统
公开(公告)号：US07201497B2
公开(公告)日：2007-04-10
申请号：US10891722
申请日：2004-07-15
申请人： Stanton Earl Weaver, Jr. , Thomas Elliot Stecher
发明人： Stanton Earl Weaver, Jr. , Thomas Elliot Stecher
IPC分类号： F21V7/00
CPC分类号： H05K1/181 , F21K9/00 , H01L25/0753 , H01L2924/0002 , H01S5/005 , H01S5/02216 , H01S5/02292 , H01S5/4025 , H05K1/0274 , H05K2201/0195 , H05K2201/0209 , H05K2201/2054 , Y02P70/611 , Y10S362/80 , H01L2924/00
摘要： A light emitting apparatus (8) includes one or more light emitting chips (10) that are disposed on a printed circuit board (12) and emit light predominantly in a wavelength range between about 400 nanometers and about 470 nanometers. The printed circuit board includes: (i) an electrically insulating board (14); (ii) electrically conductive printed circuitry (20); and (iii) an electrically insulating solder mask (22) having vias (24) through which the one or more light emitting chips electrically contact the printed circuitry. The solder mask (22) has a reflectance of greater than 60% at least between about 400 nanometers and about 470 nanometers.
摘要翻译：发光装置（8）包括设置在印刷电路板（12）上的一个或多个发光芯片（10），并且发射主要在约400纳米至约470纳米的波长范围内。印刷电路板包括：（i）电绝缘板（14）; （ii）导电印刷电路（20）; 和（iii）具有通孔（24）的电绝缘的焊接掩模（22），所述一个或多个发光芯片通过该通孔与印刷电路电接触。焊料掩模（22）具有大于60％的反射率，至少在约400纳米和约470纳米之间。

25. 发明授权

US5866952A High density interconnected circuit module with a compliant layer as part of a stress-reducing molded substrate 失效
标题翻译：高密度互连电路模块，其具有作为应力减小模制基板的一部分的柔性层
公开(公告)号：US5866952A
公开(公告)日：1999-02-02
申请号：US565269
申请日：1995-11-30
申请人： Robert John Wojnarowski , Thomas Bent Gorczyca , Stanton Earl Weaver, Jr.
发明人： Robert John Wojnarowski , Thomas Bent Gorczyca , Stanton Earl Weaver, Jr.
IPC分类号： H01L25/18 , H01L21/98 , H01L23/538 , H01L25/04 , H01L23/29
CPC分类号： H01L25/50 , H01L21/568 , H01L21/6835 , H01L23/293 , H01L23/295 , H01L23/4334 , H01L23/5389 , H01L24/24 , H01L24/75 , H01L24/76 , H01L24/82 , H01L24/96 , H01L25/0655 , H01L2224/04105 , H01L2224/24137 , H01L2224/24195 , H01L2224/73267 , H01L2224/75315 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3511
摘要： A high density interconnected multi-chip module is provided with a stress-reducing compliant material disposed around the chips prior to molding a polymeric substrate around the chips. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A compliant material is deposited around the chips, and then a mold form is positioned around the chips. Polymeric substrate molding material is added within the mold form, and then the substrate molding material is hardened. A dielectric layer having vias aligned with predetermined ones of the contact pads and having an electrical conductor extending through the vias is situated on the hardened substrate molding material and faces of the chips. A thermal plug may be affixed to the backside of a chip prior to the addition of substrate molding material.
摘要翻译：高密度互连多芯片模块在模制聚合物基片周围的芯片之前设置有围绕芯片布置的减小应力的材料。具有接触垫的芯片面朝下放置在由基底支撑的粘合剂层上。围绕芯片沉积顺应性材料，然后将模具形式定位在芯片周围。在模具形式中加入聚合物基材模塑材料，然后将基材模塑材料硬化。具有与预定接触焊盘对准的通路并具有穿过通孔延伸的电导体的通孔的电介质层位于硬化的基板模制材料和芯片的表面上。在添加基底模制材料之前，可以将热塞固定到芯片的背面。

26. 发明授权

US08364427B2 Flow sensor assemblies 失效
标题翻译：流量传感器组件
公开(公告)号：US08364427B2
公开(公告)日：2013-01-29
申请号：US12683474
申请日：2010-01-07
申请人： Ertugrul Berkcan , Shankar Chandrasekaran , Bo Li , Stanton Earl Weaver, Jr.
发明人： Ertugrul Berkcan , Shankar Chandrasekaran , Bo Li , Stanton Earl Weaver, Jr.
IPC分类号： G01F1/00
CPC分类号： G01F1/66 , G01F1/712
摘要： A flow sensor assembly is provided and includes a flow conduit configured to impart a disturbance to a flow, multiple sensors disposed at respective sensing locations along the flow conduit. Each sensor is responsive to the disturbance of the flow and generates a corresponding response signal. The flow sensor assembly further includes a processor operably connected to each sensor, the processor being configured to compute a cross-correlation function between the response signals generated by said sensors, and determine a flow rate and a direction for the flow through the conduit based on the computed cross-correlation function. Additional flow sensor assembly arrangements are also disclosed.
摘要翻译：提供了一种流量传感器组件，并且包括配置成对流动造成干扰的流动管道，设置在沿着流动管道的各个感测位置处的多个传感器。每个传感器响应于流动的干扰并产生相应的响应信号。所述流量传感器组件还包括可操作地连接到每个传感器的处理器，所述处理器被配置为计算由所述传感器产生的所述响应信号之间的互相关函数，并且基于所述传感器确定流速和通过所述导管的流动的方向计算的互相关函数。还公开了附加的流量传感器组件装置。

27. 发明授权

US07482634B2 Monolithic array for solid state ultraviolet light emitters 有权
标题翻译：固态紫外线发射体的单片阵列
公开(公告)号：US07482634B2
公开(公告)日：2009-01-27
申请号：US10950029
申请日：2004-09-24
申请人： Robert John Wojnarowski , Stanton Earl Weaver, Jr. , Abasifreke Udo Ebong , Xian An (Andrew) Cao , Steven Francis LeBoeuf , Larry Burton Rowland , Stephen D. Arthur
发明人： Robert John Wojnarowski , Stanton Earl Weaver, Jr. , Abasifreke Udo Ebong , Xian An (Andrew) Cao , Steven Francis LeBoeuf , Larry Burton Rowland , Stephen D. Arthur
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L27/153 , H01L33/32
摘要： The present invention is directed towards a source of ultraviolet energy, wherein the source is a UV-emitting LED's. In an embodiment of the invention, the UV-LED's are characterized by a base layer material including a substrate, a p-doped semiconductor material, a multiple quantum well, a n-doped semiconductor material, upon which base material a p-type metal resides and wherein the base structure has a mesa configuration, which mesa configuration may be rounded on a boundary surface, or which may be non-rounded, such as a mesa having an upper boundary surface that is flat. In other words, the p-type metal resides upon a mesa formed out of the base structure materials. In a more specific embodiment, the UV-LED structure includes n-type metallization layer, passivation layers, and bond pads positioned at appropriate locations of the device. In a more specific embodiment, the p-type metal layer is encapsulated in the encapsulating layer.
摘要翻译：本发明涉及一种紫外线能量源，其中源是紫外线发射的LED。在本发明的实施例中，UV-LED的特征在于基底层材料，其包括基底，p掺杂半导体材料，多量子阱，n掺杂半导体材料，基底材料为p型金属并且其中基部结构具有台面构造，该台面构造可以在边界表面上圆化，或者可以是非圆形的，例如具有平坦的上边界表面的台面。换句话说，p型金属位于由基底结构材料形成的台面上。在更具体的实施例中，UV-LED结构包括位于设备适当位置的n型金属化层，钝化层和接合焊盘。在更具体的实施例中，p型金属层被封装在封装层中。

28. 发明授权

US07305839B2 Thermal transfer device and system and method incorporating same 失效
标题翻译：热转印装置及其组合方法
公开(公告)号：US07305839B2
公开(公告)日：2007-12-11
申请号：US10880807
申请日：2004-06-30
申请人： Stanton Earl Weaver, Jr.
发明人： Stanton Earl Weaver, Jr.
IPC分类号： F25B21/00 , F25B49/00
CPC分类号： F25B21/00 , F25B2321/003 , Y02B30/66 , Y10T29/49147
摘要： A thermal transfer device having a first substrate layer, a second substrate layer and first and second electrodes disposed between the first substrate layer and the second substrate layer. The thermal transfer device also includes a release layer disposed between the first electrode and the second electrode and an actuator disposed adjacent the first and second electrodes. The actuator is adapted to separate the first and second electrodes from the release layer to open a thermotunneling gap between the first and second electrodes, and wherein the actuator is adapted to actively control the thermotunneling gap.
摘要翻译：一种热转印装置，具有第一基底层，第二基底层和设置在第一基底层和第二基底层之间的第一和第二电极。热转印装置还包括设置在第一电极和第二电极之间的释放层和邻近第一和第二电极设置的致动器。致动器适于将第一和第二电极与释放层分开以打开第一和第二电极之间的热电穿孔间隙，并且其中致动器适于主动地控制热电穿孔间隙。

29. 发明授权

US06557820B2 Two-stage valve suitable as high-flow high-pressure microvalve 失效
公开(公告)号：US06557820B2
公开(公告)日：2003-05-06
申请号：US09862809
申请日：2001-05-22
申请人： Todd Garrett Wetzel , Matthew Christian Nielsen , Stanton Earl Weaver, Jr. , Renato Guida , James Wilson Rose , Laura Jean Meyer
发明人： Todd Garrett Wetzel , Matthew Christian Nielsen , Stanton Earl Weaver, Jr. , Renato Guida , James Wilson Rose , Laura Jean Meyer
IPC分类号： F16K3112
CPC分类号： F16K99/0001 , F15C5/00 , F16K31/402 , F16K99/0015 , F16K99/0048 , F16K99/0059 , Y10T137/87209
摘要： A two-stage valve for controlling the flow of gas from a pressurized gas supply with an upper main body including a cavity; a lower main body with at least one flow exhaust passage forming a primary flow path through the two-stage valve; a pre-stressed diaphragm sandwiched between the upper and lower main bodies, and pressure control capability for controlling the pressure in the cavity. A secondary flow path exists from the pressurized gas supply through the lower main body, through the upper main body, and terminating in the cavity in the upper main body. A first valve is installed in the secondary flow path to open and close the flow of gas from the pressurized gas supply to the cavity. A second valve installed in an exhaust passage in the upper main body allows the pressure in the cavity to exhaust to the environment. When the second valve is closed, the pressure in the cavity in the upper main body can be increased to lower the pre-stressed diaphragm. Raising and lowering of the pressure in the cavity causes the pre-stressed diaphragm to open and close the flow of gas from the pressurized gas supply through the primary flow path of the two-stage valve. The design of the two-stage valve and its components lends itself to constructing the two-stage valve as a microvalve using Micro-Electro-Mechanical Systems (MEMS) concepts.

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