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21. 发明授权

US07067810B2 Thermal type infrared imaging device and fabrication method thereof 失效
标题翻译：热式红外成像装置及其制造方法
公开(公告)号：US07067810B2
公开(公告)日：2006-06-27
申请号：US10393259
申请日：2003-03-21
申请人： Keitaro Shigenaka , Naoya Mashio
发明人： Keitaro Shigenaka , Naoya Mashio
IPC分类号： H01L25/00
CPC分类号： H01L27/14669 , H01L27/1463 , H01L27/14649 , H01L27/14683
摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.
摘要翻译：一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。

22. 发明申请

US20060131506A1 Thermal type infrared ray imaging device and fabrication method thereof 失效
标题翻译：热式红外线成像装置及其制造方法
公开(公告)号：US20060131506A1
公开(公告)日：2006-06-22
申请号：US11352339
申请日：2006-02-13
申请人： Keitaro Shigenaka , Naoya Mashio
发明人： Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01T1/24
CPC分类号： H01L27/14669 , H01L27/1463 , H01L27/14649 , H01L27/14683
摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.
摘要翻译：一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。

23. 发明申请

US20050061978A1 Infrared sensor device and manufacturing method thereof 有权
标题翻译：红外线传感器装置及其制造方法
公开(公告)号：US20050061978A1
公开(公告)日：2005-03-24
申请号：US10960987
申请日：2004-10-12
申请人： Yoshinori Ilda , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Ilda , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J1/02 , G01J5/20 , G01J5/24 , H01L21/28 , H01L27/14 , H01L27/146 , H01L27/16 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L31/09 , H01L37/02
CPC分类号： G01J5/08 , G01J5/0853 , G01J5/20 , H01L27/14649 , H01L27/16
摘要： A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, forming a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrate and suspending the infrared detection pixel within the hole by the supporting beam line.
摘要翻译：一种制造红外线传感器的方法，包括制备包括由单晶硅制成的支撑构件的基板，形成在支撑构件上的由氧化硅制成的第一层和形成在第一层上的单晶硅制成的第二层，在第二层上嵌入氧化硅层，在第二层中形成红外检测像素，红外检测像素具有将热量转换成电信号的功能，在硅上形成包括U形导体的支撑束线氧化层，同时在第二层上形成外围电路的MOS晶体管的栅电极，栅电极具有U形横截面的导电体，在第二层上形成红外吸收层，红外线吸收层具有将红外线转换为热的功能，以及蚀刻第二层以形成用于隔离红外线检测pi的孔从衬底起xel并通过支撑束线将红外检测像素悬挂在孔内。

24. 发明授权

US07193211B2 Thermal type infrared ray imaging device and fabrication method thereof 失效
标题翻译：热式红外线成像装置及其制造方法
公开(公告)号：US07193211B2
公开(公告)日：2007-03-20
申请号：US11352339
申请日：2006-02-13
申请人： Keitaro Shigenaka , Naoya Mashio
发明人： Keitaro Shigenaka , Naoya Mashio
IPC分类号： H01L25/00
CPC分类号： H01L27/14669 , H01L27/1463 , H01L27/14649 , H01L27/14683
摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.
摘要翻译：一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。

25. 发明授权

US06770881B2 Infrared sensor 失效
公开(公告)号：US06770881B2
公开(公告)日：2004-08-03
申请号：US10726583
申请日：2003-12-04
申请人： Yoshinori Iida , Keitaro Shigenaka
发明人： Yoshinori Iida , Keitaro Shigenaka
IPC分类号： G01T116
CPC分类号： H04N5/33 , H01L27/14634 , H01L27/14649
摘要： A low noise, high sensitivity and wide dynamic range uncooled type infrared sensor can effectively reduce the influence of fluctuations of the gate of the amplifier transistor. The infrared sensor comprises an imaging region containing thermoelectric conversion pixels arranged two-dimensionally in the form of a matrix of a plurality of row and a plurality of columns on a semiconductor substrate to detect incident infrared rays, column selection lines, vertical signal lines, said column selection lines and said vertical signal lines being arranged the imaging region, amplifier transistors configured to be modulated by the respective signal voltages generated in the signal lines, storage capacities connected respectively to the drains of the amplifier transistors and configured to store signal charges from the transistors, a plurality of reset circuits for resetting the drain potentials of said amplifier transistors and read circuits for reading the respective signal charges stored in said storage capacities, coupling capacitors being arranged between the vertical signal lines and the gate of amplifier transistors, sampling transistors being connected between the drains and the gates of said amplifier transistors.

26. 发明授权

US06759657B2 Infrared sensor 失效
标题翻译：红外传感器
公开(公告)号：US06759657B2
公开(公告)日：2004-07-06
申请号：US10106787
申请日：2002-03-27
申请人： Yoshinori Iida , Keitaro Shigenaka
发明人： Yoshinori Iida , Keitaro Shigenaka
IPC分类号： H01L2714
CPC分类号： H04N5/33 , H01L27/14634 , H01L27/14649
摘要： A low noise, high sensitivity and wide dynamic range uncooled type infrared sensor can effectively reduce the influence of fluctuations of the gate of the amplifier transistor. The infrared sensor comprises an imaging region containing thermoelectric conversion pixels arranged two-dimensionally in the form of a matrix of a plurality of row and a plurality of columns on a semiconductor substrate to detect incident infrared rays, column selection lines, vertical signal lines, said column selection lines and said vertical signal lines being arranged the imaging region, amplifier transistors configured to be modulated by the respective signal voltages generated in the signal lines, storage capacities connected respectively to the drains of the amplifier transistors and configured to store signal charges from the transistors, a plurality of reset circuits for resetting the drain potentials of said amplifier transistors and read circuits for reading the respective signal charges stored in said storage capacities, coupling capacitors being arranged between the vertical signal lines and the gate of amplifier transistors, sampling transistors being connected between the drains and the gates of said amplifier transistors.
摘要翻译：低噪声，高灵敏度和宽动态范围的非冷却型红外传感器可以有效降低放大晶体管栅极波动的影响。所述红外线传感器包括成像区域，所述成像区域包含在半导体衬底上以多行和多列的矩阵形式二维布置的热电转换像素，以检测入射的红外线，列选择线，垂直信号线，所述列选择线，并且所述垂直信号线被布置成成像区域，放大器晶体管被配置为由在信号线中产生的各个信号电压进行调制，存储电容分别连接到放大器晶体管的漏极，并被配置为存储来自晶体管，用于复位所述放大器晶体管的漏极电位和读取电路的多个复位电路，用于读取存储在所述存储容量中的各个信号电荷，耦合电容器布置在垂直信号线和放大器晶体管的栅极之间，采样晶体管为连接在t之间他排水和放大晶体管的门。

27. 发明授权

US06504153B1 Semiconductor infrared detecting device 失效
标题翻译：半导体红外检测装置
公开(公告)号：US06504153B1
公开(公告)日：2003-01-07
申请号：US09624996
申请日：2000-07-25
申请人： Keitaro Shigenaka , Yoshinori Iida
发明人： Keitaro Shigenaka , Yoshinori Iida
IPC分类号： H01L2714
CPC分类号： H01L27/14649 , H01L31/03529 , Y02E10/50
摘要： In a semiconductor infrared image pick-up system, thermo-sensing sections arrayed in a matrix format are supported by a supporting section above a base substrate in a floating state such that they are thermally independent of the base substrate and of each other. Each thermo-sensing section includes first and second semiconductor layers stacked on an insulating layer to form a pn junction. The second layer is in contact with the first layer via an irregular interface to enlarge the surface area of the pn junction. An infrared image is picked up with reference to a change in electric current flowing through the pn junctions, which is caused when the thermo-sensing sections are irradiated with infrared rays in a state where forward bias voltage is applied to the pn junctions.
摘要翻译：在半导体红外图像拾取系统中，以矩阵形式排列的热感测部分以浮动状态的基底基板上方的支撑部分支撑，使得它们与基底基板和彼此热独立。每个热敏感部分包括堆叠在绝缘层上以形成pn结的第一和第二半导体层。第二层通过不规则界面与第一层接触，以扩大pn结的表面积。参照流过pn结的电流的变化来拾取红外图像，当在pn结处施加正向偏置电压的状态下，当感温部分被红外线照射时引起。

28. 发明授权

US07122798B2 Infrared image sensor 失效
标题翻译：红外图像传感器
公开(公告)号：US07122798B2
公开(公告)日：2006-10-17
申请号：US10753386
申请日：2004-01-09
申请人： Keitaro Shigenaka , Yoshinori Iida
发明人： Keitaro Shigenaka , Yoshinori Iida
IPC分类号： G01J5/00
CPC分类号： G01J5/24 , H04N5/33
摘要： An infrared image sensor comprises, a substrate having an image area on which infrared radiation is made incident and an non-image area out of the image area, plural first heat-sensitive parts arranged in rows and columns on the image area, plural second heat-sensitive parts provided in the non-image area so as to correspond to the respective rows of the first heat-sensitive parts in the image area with the same thermoelectric conversion function as that of the first heat-sensitive parts, a bias current supply circuit supplying a bias current to the first heat-sensitive parts and second heat-sensitive parts, an output circuit outputting an electric signal of the first heat-sensitive parts, and a bias current control circuit controlling the bias current to be fed to the first heat-sensitive parts, according to an electric signal of the second heat-sensitive parts.
摘要翻译：红外图像传感器包括具有入射红外线的图像区域和图像区域中的非图像区域的基板，在图像区域上排列成行和列的多个第一热敏部件，多个第二热量设置在所述非图像区域中的与所述图像区域中的所述第一热敏部件的各行对应的感光部件具有与所述第一热敏部件相同的热电转换功能，偏置电流供给电路向第一热敏部件和第二热敏部件提供偏置电流;输出电路，输出第一热敏部件的电信号;以及偏置电流控制电路，控制要馈送到第一热敏部件的第一热量敏感部件，根据第二热敏部件的电信号。

29. 发明授权

US4868622A Semiconductor light-detecting device with alloyed isolating region 失效
标题翻译：具有合金隔离区域的半导体光检测装置
公开(公告)号：US4868622A
公开(公告)日：1989-09-19
申请号：US113069
申请日：1987-10-27
申请人： Keitaro Shigenaka
发明人： Keitaro Shigenaka
IPC分类号： H01L31/0264 , H01L27/146 , H01L31/08 , H01L31/10
CPC分类号： H01L27/14649 , Y10S257/926
摘要： A semiconductor light detecting device comprises a substrate, a first stacked layer of a first conductivity type formed on the substrate by alternately laminating a compound semimetal layer and a compound semiconductor layer repeatedly, a second stacked layer of a second conductivity type formed on the first stacked layer by alternately laminating the compound semimetal layer and the compound semiconductor layer repeatedly, and an isolation region formed by selectively irradiating the first and second stacked layers with an energy beam. A plurality of light detecting elements isolated from each other by the isolation region are formed on the substrate so as to provide the semiconductor light detecting device.
摘要翻译：半导体光检测装置包括：基板，通过交替地层叠复合半金属层和化合物半导体层而在基板上形成的第一导电类型的第一堆叠层，形成在第一堆叠上的第二导电类型的第二堆叠层通过重复地交替层叠化合物半金属层和化合物半导体层，以及通过用能量束选择性地照射第一层和第二层而形成的隔离区。在基板上形成由隔离区域彼此隔离的多个光检测元件，以提供半导体光检测装置。

30. 发明授权

US5729020A Hybrid type infrared detector 失效
标题翻译：混合型红外探测器
公开(公告)号：US5729020A
公开(公告)日：1998-03-17
申请号：US697447
申请日：1996-08-23
申请人： Keiichi Matsushita , Keitaro Shigenaka , Katsuyoshi Fukuda
发明人： Keiichi Matsushita , Keitaro Shigenaka , Katsuyoshi Fukuda
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10 , H01L33/00
CPC分类号： H01L27/1465
摘要： The hybrid type infrared detector includes a plurality of photodiodes constructed by p-n junctions made of compound semiconductor material on a silicon substrate, a signal processing portion formed on another substrate, and a connecting member for electrically connecting the plurality of photodiodes with the signal processing portion, and for injecting carriers generated by the photodiodes into the signal processing portion, and is characterized in that partitioning portions are formed along the cleavage plane of the compound semiconductor material.
摘要翻译：混合型红外线检测器包括由硅衬底上的由化合物半导体材料制成的pn结构成的多个光电二极管，形成在另一衬底上的信号处理部分和用于将多个光电二极管与信号处理部分电连接的连接部件，并且用于将由光电二极管产生的载流子注入到信号处理部分中，并且其特征在于沿着化合物半导体材料的解理面形成分隔部分。

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