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    • 22. 发明授权
    • Contiguous disk bubble storage
    • 相邻的磁盘空泡存储
    • US4283775A
    • 1981-08-11
    • US58718
    • 1979-07-18
    • Mitchell S. Cohen
    • Mitchell S. Cohen
    • G11C11/14G11C19/08
    • G11C19/0816G11C19/0875
    • A bubble storage system using contiguous propagation elements is described using magnetically soft drive layers for movement of the bubble domains in a bubble domain film, in response to the reorientation of a magnetic drive field in the plane of the drive layers. In contrast with prior art contiguous element propagation structures, charged walls are not employed for movement of bubble domains. Instead, magnetic poles along the drive layers are used to move the domains. Two drive layers are used, each of which is comprised of a magnetically soft material, such as permalloy. The drive layers are located at different heights with respect to the layer in which the magnetic bubble domains exist, the bottom drive layer being comprised of contiguous propagation elements defining a generally undulating edge along which the magnetic bubble domains move. This layer can be comprised of permalloy contiguous disks, diamonds, etc. The top layer is comprised of magnetically soft elements located over the cusp regions formed along the undulating edges of the underlying drive layer. For propagation around the disks or diamonds, the bottom drive layer is predominant in determining bubble motion. However, in the art of the cusp regions along the undulating edge defined by the bottom drive layer, the magnetic poles produced by the top drive layer are predominant. These elements in the top drive layer produce potential wells at those locations corresponding to cusps along the undulating edge defined by the contiguous propagation elements in the bottom drive layer, and therefore control bubble motion in the cusp regions. This eliminates a serious problem to satisfactory bubble motion along contiguous propagation element devices. A single level masking fabrication process is described where the top and bottom drive layers can be fabricated through the same mask, and a total chip design is shown which provides all functions required in a complete storage chip.
    • 使用磁软驱动层来描述使用连续传播元件的气泡存储系统,以响应于在驱动层的平面中的磁驱动场的重新定向来响应气泡区膜中的气泡域的移动。 与现有技术的连续元件传播结构不同,带电壁不用于气泡畴的移动。 相反,沿着驱动层的磁极用于移动域。 使用两个驱动层,每个驱动层由柔软的材料构成,例如坡莫合金。 驱动层相对于其中存在磁性气泡区域的层位于不同的高度,底部驱动层由限定磁性泡区域沿其移动的大致起伏的边缘的连续传播元件组成。 该层可以由坡莫合金连续盘,金刚石等组成。顶层由位于沿着下驱动层的起伏边缘形成的尖端区域上方的软磁元件构成。 为了在盘或钻石周围传播,底部驱动层主要用于确定气泡运动。 然而,在由底部驱动层限定的起伏边缘的尖端区域的领域中,由顶部驱动层产生的磁极是主要的。 顶部驱动层中的这些元件在沿着由底部驱动层中的连续传播元件限定的起伏边缘的尖端对应的那些位置产生势阱,因此控制尖端区域中的气泡运动。 这消除了沿连续传播元件装置令人满意的气泡运动的严重问题。 描述了单层屏蔽制造工艺,其中顶部和底部驱动层可以通过相同的掩模制造,并且示出了提供完整存储芯片中所需的所有功能的总芯片设计。
    • 27. 发明授权
    • Pedestal bubble domain chip and processes for making same
    • 基座泡泡域芯片及其制作工艺
    • US4187553A
    • 1980-02-05
    • US863829
    • 1977-12-23
    • Kie Y. AhnMitchell S. CohenJohn V. PowersLung-jo Tao
    • Kie Y. AhnMitchell S. CohenJohn V. PowersLung-jo Tao
    • G11C11/14G11C19/08H01F10/06H01F41/34H01F10/02
    • G11C19/085G11C19/0841H01F10/06H01F41/34Y10S428/90Y10S428/928Y10T428/1291
    • An improved magnetic bubble domain chip and processes for making the chip are described. The chip is comprised of a magnetic bubble domain film in which small bubble domains can be moved, and overlying layers of metallurgy. The layer of metallurgy closest to the bubble film is an electrically conductive layer having apertures (or recesses) therein. This layer is patterned to provide current carrying conductors. The next overlayer is a layer of magnetic material having in-plane magnetization which is patterned to provide the propagation elements used to move the bubble domains. In a particular embodiment, the magnetic layer is comprised of a magnetically soft material, such as permalloy. The chip is characterized by the provision of insulating pedestals located in the apertures of the conductive layer. These insulating pedestals are located in the regions of the chip used for sensing (and/or bubble generation). That is, they take the place of the thick conductive material in those areas of the chip. The sensor and bubble generators are usually portions of the in-plane magnetic layer. If the height of the insulating pedestals is the same as the height of the conductive layer, planarization is achieved and each overlayer lies in a single plane, where the planes are parallel to one another. However, the pedestal can be of any desired height. This chip is particularly advantageous for use with bubble domains having diameters of about 1 micron and less, since the pedestal magnetic chip can be provided by single level masking techniques in which only a single critical masking step is required. The insulating pedestal can be formed prior to deposition of the current carrying conductive layer, or subsequent to deposition of this layer.
    • 描述了改进的磁泡区域芯片和制造芯片的工艺。 该芯片由可以移动小气泡区域的磁性气泡区域薄膜和上覆的冶金层构成。 最靠近气泡膜的冶金层是其中具有孔(或凹槽)的导电层。 图案化该层以提供载流导体。 下一个覆盖层是具有面内磁化的磁性材料层,其被图案化以提供用于移动气泡畴的传播元件。 在一个具体实施例中,磁性层由诸如坡莫合金之类的软磁材料构成。 芯片的特征在于设置位于导电层的孔中的绝缘基座。 这些绝缘基座位于用于感测(和/或气泡产生)的芯片的区域中。 也就是说,它们代替了芯片的那些区域中的厚导电材料。 传感器和气泡发生器通常是面内磁性层的一部分。 如果绝缘基座的高度与导电层的高度相同,则实现平坦化,并且每个覆盖层位于平面彼此平行的单个平面中。 然而,基座可以是任何期望的高度。 该芯片对于直径约为1微米和更小的气泡区域是特别有利的,因为可以通过单层屏蔽技术提供基座磁性芯片,其中仅需要单个临界屏蔽步骤。 绝缘基座可以在沉积载流导电层之前或之后沉积该层形成。