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21. 发明申请

US20090026587A1 GRADIENT DEPOSITION OF LOW-K CVD MATERIALS 审中-公开
标题翻译：低K CVD材料的梯度沉积
公开(公告)号：US20090026587A1
公开(公告)日：2009-01-29
申请号：US10597038
申请日：2004-01-14
申请人： Matthew Angyal , Habib Hichri , Henry A. Nye, III , Dale McHerron , Jia Lee
发明人： Matthew Angyal , Habib Hichri , Henry A. Nye, III , Dale McHerron , Jia Lee
IPC分类号： H01L23/58 , H01L21/31
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/45523 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274
摘要： A dielectric layer for a semiconductor device having a low overall dielectric constant, good adhesion to the semiconductor substrate, and good resistance to cracking due to thermal cycling. The dielectric layer is made by a process involving continuous variation of dielectric material deposition conditions to provide a dielectric layer having a gradient of dielectric constant.
摘要翻译：用于半导体器件的电介质层，其具有低的总体介电常数，对半导体衬底的良好的粘附性，以及由于热循环而具有良好的耐开裂性。通过涉及介电材料沉积条件的连续变化以提供具有介电常数梯度的电介质层的工艺来制造电介质层。

22. 发明授权

US07202564B2 Advanced low dielectric constant organosilicon plasma chemical vapor deposition films 有权
标题翻译：先进的低介电常数有机硅等离子体化学气相沉积膜
公开(公告)号：US07202564B2
公开(公告)日：2007-04-10
申请号：US10906370
申请日：2005-02-16
申请人： Son Nguyen , Sarah L. Lane , Jia Lee , Kensaku Ida , Darryl D. Restaino , Takeshi Nogami
发明人： Son Nguyen , Sarah L. Lane , Jia Lee , Kensaku Ida , Darryl D. Restaino , Takeshi Nogami
IPC分类号： H01L23/48
CPC分类号： H01L21/7682 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02354 , H01L21/3122 , H01L21/31633 , H01L2221/1047
摘要： A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3 bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.
摘要翻译：在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和较少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有小于约1.40的CH 3/3 CH 2拉伸的峰面积的FTIR光谱，SiH拉伸的峰面积小于约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％。

23. 发明授权

US07135398B2 Reliable low-k interconnect structure with hybrid dielectric 有权
标题翻译：具有混合电介质的可靠的低k互连结构
公开(公告)号：US07135398B2
公开(公告)日：2006-11-14
申请号：US10901868
申请日：2004-07-29
申请人： John A. Fitzsimmons , Stephen E. Greco , Jia Lee , Stephen M. Gates , Terry Spooner , Matthew S. Angyal , Habib Hichri , Theordorus E. Standaert , Glenn A. Biery
发明人： John A. Fitzsimmons , Stephen E. Greco , Jia Lee , Stephen M. Gates , Terry Spooner , Matthew S. Angyal , Habib Hichri , Theordorus E. Standaert , Glenn A. Biery
IPC分类号： H01L21/4763
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76835 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.
摘要翻译：公开了一种具有混合电介质的高级后端（BEOL）互连结构。用于通孔电平的层间电介质（ILD）优选地不同于线路电平的ILD。在优选实施例中，通孔级ILD由低k SiCOH材料形成，并且线级ILD由低k聚合物热固性材料形成。

24. 发明申请

US20060183345A1 ADVANCED LOW DIELECTRIC CONSTANT ORGANOSILICON PLASMA CHEMICAL VAPOR DEPOSITION FILMS 有权
标题翻译：高级低介电常数有机硅等离子体化学气相沉积膜
公开(公告)号：US20060183345A1
公开(公告)日：2006-08-17
申请号：US10906370
申请日：2005-02-16
申请人： Son Nguyen , Sarah Lane , Jia Lee , Kensaku Ida , Darryl Restaino , Takeshi Nogami
发明人： Son Nguyen , Sarah Lane , Jia Lee , Kensaku Ida , Darryl Restaino , Takeshi Nogami
IPC分类号： H01L21/31
CPC分类号： H01L21/7682 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/02354 , H01L21/3122 , H01L21/31633 , H01L2221/1047
摘要： A porous low k or ultra low k dielectric film comprising atoms of Si, C, O and H (hereinafter “SiCOH”) in a covalently bonded tri-dimensional network structure having a dielectric constant of less than about 3.0, a higher degree of crystalline bonding interactions, more carbon as methyl termination groups and fewer methylene, —CH2— crosslinking groups than prior art SiCOH dielectrics is provided. The SiCOH dielectric is characterized as having a FTIR spectrum comprising a peak area for CH3+CH2 stretching of less than about 1.40, a peak area for SiH stretching of less than about 0.20, a peak area for SiCH3 bonding of greater than about 2.0, and a peak area for Si—O—Si bonding of greater than about 60%, and a porosity of greater than about 20%.
摘要翻译：在介电常数小于约3.0的共价键合的三维网络结构中，包含Si，C，O和H原子（以下称为“SiCOH”）的多孔低k或超低k电介质膜，结晶度更高键合相互作用，提供比现有技术的SiCOH电介质更多的碳作为甲基端基和较少的亚甲基-CH 2 - 2交联基团。 SiCOH电介质的特征在于具有包含小于约1.40的CH 3 N 2 CH 2拉伸的峰面积的FTIR光谱，SiH拉伸的峰面积小于约0.20，SiCH 3键的峰面积大于约2.0，Si-O-Si键合的峰面积大于约60％，孔隙率大于约20％。

25. 发明授权

US07009280B2 Low-k interlevel dielectric layer (ILD) 失效
标题翻译：低k层间介质层（ILD）
公开(公告)号：US07009280B2
公开(公告)日：2006-03-07
申请号：US10709320
申请日：2004-04-28
申请人： Matthew Angyal , Edward Paul Barth , Sanjit Kumar Das , Charles Robert Davis , Habib Hichri , William Francis Landers , Jia Lee
发明人： Matthew Angyal , Edward Paul Barth , Sanjit Kumar Das , Charles Robert Davis , Habib Hichri , William Francis Landers , Jia Lee
IPC分类号： H01L23/58
CPC分类号： H01L23/53295 , C23C16/401 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/02362 , H01L21/31633 , H01L21/76829 , H01L21/76835 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An interlevel dielectric layer (ILD) comprises a low-k dielectric layer; and a low-k dielectric film, deposited under compressive stress, atop the dielectric layer. The dielectric layer comprises a low-k material, such as an organosilicon glass (OSG) or a SiCOH material. The dielectric film has a thickness, which is 2%–10% of the thickness of the dielectric layer, has a similar chemical composition to the dielectric layer, but has a different morphology than the dielectric layer. The dielectric film is deposited under compressive stress, in situ, at or near the end of the dielectric layer deposition by altering a process that was used to deposit the low-k dielectric layer.
摘要翻译：层间电介质层（ILD）包括低k电介质层; 以及在压电应力下沉积在电介质层顶上的低k电介质膜。电介质层包括低k材料，例如有机硅玻璃（OSG）或SiCOH材料。电介质膜的厚度为电介质层厚度的2％-10％，与电介质层具有相似的化学成分，但具有与电介质层不同的形态。通过改变用于沉积低k电介质层的工艺，在介电层沉积的结束处或在其附近的压应力下沉积电介质膜。

26. 发明授权

US06987402B2 Reversible logic elements operating in a synchronous mode 失效
标题翻译：在同步模式下工作的可逆逻辑元件
公开(公告)号：US06987402B2
公开(公告)日：2006-01-17
申请号：US10812419
申请日：2004-03-30
申请人： Jia Lee , Peper Ferdinand , Susumu Adachi
发明人： Jia Lee , Peper Ferdinand , Susumu Adachi
IPC分类号： H03K19/20
CPC分类号： H03K19/1736
摘要： A new reversible element with six lines (three input lines and three output lines) and two states are proposed. This element is computationally universal in the sense that a universal Turing machine can be constructed from it. Two reversible elements, each of which has two input lines, two output lines, and two states. These two elements are related to each other in the sense that their functionalities are each other's inverse, so, one of the elements can be obtained from the other by reversing the operations conducted by the other, and interpreting the other's input lines as output lines and the other's output lines as input lines. Together these two elements form a computationally universal set, i.e., a universal Turing machine can be constructed from them.
摘要翻译：提出了一种具有六条线（三条输入线和三条输出线）和两条状态的新型可逆元件。这个元素在计算上是普遍的，在这个意义上，通用图灵机可以从它构建。两个可逆元件，每个都有两条输入线，两条输出线和两条状态。这两个元素在它们的功能彼此相反的意义上彼此相关，因此，通过反转另一个的操作可以从另一个元素中获得另一个元素，并将另一个输入行解释为输出行，并且其他输出线作为输入线。这两个要素组合在一起形成一个计算上通用的组合，即可以从它们构造通用图灵机。

27. 发明授权

US06917108B2 Reliable low-k interconnect structure with hybrid dielectric 有权
公开(公告)号：US06917108B2
公开(公告)日：2005-07-12
申请号：US10294139
申请日：2002-11-14
申请人： John A. Fitzsimmons , Stephen E. Greco , Jia Lee , Stephen M. Gates , Terry Spooner , Matthew S. Angyal , Habib Hichri , Theordorus E. Standaert , Glenn A. Biery
发明人： John A. Fitzsimmons , Stephen E. Greco , Jia Lee , Stephen M. Gates , Terry Spooner , Matthew S. Angyal , Habib Hichri , Theordorus E. Standaert , Glenn A. Biery
IPC分类号： H01L21/768 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76835 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.

28. 发明申请

US20050023693A1 Reliable low-k interconnect structure with hybrid dielectric 有权
标题翻译：具有混合电介质的可靠的低k互连结构
公开(公告)号：US20050023693A1
公开(公告)日：2005-02-03
申请号：US10901868
申请日：2004-07-29
申请人： John Fitzsimmons , Stephen Greco , Jia Lee , Stephen Gates , Terry Spooner , Matthew Angyal , Habib Hichri , Theordorus Standaert , Glenn Biery
发明人： John Fitzsimmons , Stephen Greco , Jia Lee , Stephen Gates , Terry Spooner , Matthew Angyal , Habib Hichri , Theordorus Standaert , Glenn Biery
IPC分类号： H01L21/768 , H01L23/532 , H01L21/4763
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76835 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.
摘要翻译：公开了一种具有混合电介质的高级后端（BEOL）互连结构。用于通孔电平的层间电介质（ILD）优选地不同于线路电平的ILD。在优选实施例中，通孔级ILD由低k SiCOH材料形成，并且线级ILD由低k聚合物热固性材料形成。

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