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    • 25. 发明申请
    • ORGANIC TRANSISTOR AND METHOD FOR PRODUCING THE SAME
    • 有机晶体管及其制造方法
    • US20110121281A1
    • 2011-05-26
    • US13055303
    • 2009-06-29
    • Masayoshi KotakeMasanori KasaiHisatomo YoneharaKiyofumi Takano
    • Masayoshi KotakeMasanori KasaiHisatomo YoneharaKiyofumi Takano
    • H01L51/10H01L51/40
    • H01L51/0558H01L51/0003H01L51/0007H01L51/0545H01L51/0566
    • The object of the present invention is to provide an organic transistor using an organic semiconductor having excellent transistor properties, and a method for producing the organic transistor, the present invention providing, first, an organic transistor including a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, wherein the organic semiconductor layer (d) contains a fluorine-based compound (surfactant), and, secondly, a method for producing an organic transistor comprising a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, the method comprising: a step in which the organic semiconductor layer (d) is formed on the insulating layer (c) by printing or coating an organic semiconductor solution containing a fluorine-based surfactant; or a step in which the insulating layer (d) is formed on the organic semiconductor layer (d) containing a fluorine-based surfactant by printing or coating.
    • 本发明的目的是提供一种使用具有优异的晶体管特性的有机半导体的有机晶体管及其制造方法,本发明首先提供一种包括栅电极(b),绝缘体 层(c),接触绝缘层(c)并具有沟道形成区域的有机半导体层(d)和形成在(a)基板上的源极/漏极(e)),其中有机半导体 层(d)含有氟系化合物(表面活性剂),其次,有机晶体管的制造方法包括:栅电极(b),绝缘层(c),有机半导体层(d) 绝缘层(c)并具有沟道形成区域以及形成在(a)基板上的源极/漏极电极(e),所述方法包括:将所述有机半导体层(d)形成在所述绝缘层 绝缘层(c) 浸入或涂布含有氟基表面活性剂的有机半导体溶液; 或通过印刷或涂布在含有氟系表面活性剂的有机半导体层(d)上形成绝缘层(d)的步骤。
    • 26. 发明申请
    • INK COMPOSITION FOR FORMING INSULATING FILM AND INSULATING FILM FORMED FROM THE INK COMPOSITION
    • 用于形成绝缘膜的油墨组合物和从墨水组合物形成的绝缘膜
    • US20110086946A1
    • 2011-04-14
    • US12737145
    • 2009-06-03
    • Masayoshi KotakeHideki EtoriToshihiro EbineHiroshi IsozumiMasanori Kasai
    • Masayoshi KotakeHideki EtoriToshihiro EbineHiroshi IsozumiMasanori Kasai
    • C09D11/10
    • H01L21/02118C09D11/033C09D11/10H01L21/312H01L51/052H01L51/0545
    • An insulating ink composition for forming an insulating film, which sufficiently achieves a low calcination temperature, solvent resistance and an insulating property, is provided. Furthermore, an ink composition for forming an insulating film which can form, by the printing method, fine insulating film patterns necessary for formation of highly integrated organic transistors is provided. The present invention provides an ink composition which forms an insulating film, and includes an organic solvent, a polyvinylphenol-based resin, an epoxy resin and a cross-linking aid. Particularly, the ink composition is a composition wherein the organic solvent includes an organic solvent which has a vapor pressure of 11.3×102 Pa or higher at 20° C. and a boiling point of lower than 115° C. under atmospheric pressure and an organic solvent which has a vapor pressure of less than 11.3×102 Pa at 20° C. and a boiling point of 115° C. or higher under atmospheric pressure; the ink composition includes a extender component having a volume average particle diameter of 1 to 150 nm and a silicone-based releasing component.
    • 提供一种用于形成绝缘膜的绝缘油墨组合物,其充分地实现了低煅烧温度,耐溶剂性和绝缘性。 此外,提供一种用于形成绝缘膜的油墨组合物,其可以通过印刷方法形成形成高度集成的有机晶体管所需的精细绝缘膜图案。 本发明提供一种形成绝缘膜的油墨组合物,其包括有机溶剂,聚乙烯基苯酚类树脂,环氧树脂和交联助剂。 特别地,油墨组合物是其中有机溶剂包括在大气压下在20℃和沸点低于115℃的蒸气压为11.3×10 2 Pa或更高的有机溶剂和有机溶剂的组合物 在大气压下在20℃下蒸气压小于11.3×102Pa,沸点为115℃以上的溶剂; 油墨组合物包括体积平均粒径为1〜150nm的增量剂成分和硅酮类脱模成分。
    • 29. 发明授权
    • Organic transistor and method for producing the same
    • 有机晶体管及其制造方法
    • US09166182B2
    • 2015-10-20
    • US13055303
    • 2009-06-29
    • Masayoshi KotakeMasanori KasaiHisatomo YoneharaKiyofumi Takano
    • Masayoshi KotakeMasanori KasaiHisatomo YoneharaKiyofumi Takano
    • H01L51/00H01L51/05
    • H01L51/0558H01L51/0003H01L51/0007H01L51/0545H01L51/0566
    • The object of the present invention is to provide an organic transistor using an organic semiconductor having excellent transistor properties, and a method for producing the organic transistor, the present invention providing, first, an organic transistor including a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, wherein the organic semiconductor layer (d) contains a fluorine-based compound (surfactant), and, secondly, a method for producing an organic transistor comprising a gate electrode (b), an insulating layer (c), an organic semiconductor layer (d) which contacts the insulating layer (c) and has a channel formation area, and source/drain electrodes (e), which are formed on (a) a substrate, the method comprising: a step in which the organic semiconductor layer (d) is formed on the insulating layer (c) by printing or coating an organic semiconductor solution containing a fluorine-based surfactant; or a step in which the insulating layer (d) is formed on the organic semiconductor layer (d) containing a fluorine-based surfactant by printing or coating.
    • 本发明的目的是提供一种使用具有优异的晶体管特性的有机半导体的有机晶体管及其制造方法,本发明首先提供一种包括栅电极(b),绝缘体 层(c),接触绝缘层(c)并具有沟道形成区域的有机半导体层(d)和形成在(a)基板上的源极/漏极(e)),其中有机半导体 层(d)含有氟系化合物(表面活性剂),其次,有机晶体管的制造方法包括:栅电极(b),绝缘层(c),有机半导体层(d) 绝缘层(c)并具有沟道形成区域以及形成在(a)基板上的源极/漏极电极(e),所述方法包括:将所述有机半导体层(d)形成在所述绝缘层 绝缘层(c) 浸入或涂布含有氟基表面活性剂的有机半导体溶液; 或通过印刷或涂布在含有氟系表面活性剂的有机半导体层(d)上形成绝缘层(d)的步骤。