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21. 发明授权

US4565584A Method of producing single crystal film utilizing a two-step heat treatment 失效
标题翻译：利用两步热处理制备单晶膜的方法
公开(公告)号：US4565584A
公开(公告)日：1986-01-21
申请号：US460801
申请日：1983-01-25
申请人： Masao Tamura , Makoto Ohkura , Masanobu Miyao , Nobuyoshi Natsuaki , Naotsugu Yoshihiro , Takashi Tokuyama , Hiroshi Ishihara
发明人： Masao Tamura , Makoto Ohkura , Masanobu Miyao , Nobuyoshi Natsuaki , Naotsugu Yoshihiro , Takashi Tokuyama , Hiroshi Ishihara
IPC分类号： H01L21/20 , C30B1/02 , C30B1/08 , H01L21/31 , H01L21/263 , H01L21/205
CPC分类号： C30B1/08 , C30B1/023 , Y10S148/003 , Y10S148/09 , Y10S148/123 , Y10S438/909
摘要： An amorphous or polycrystalline film which continuously covers the exposed surface of a single crystal substrate and an insulating film, is deposited in ultra-high vacuum and then heat-treated. The film is subjected to solid phase epitaxial growth at a temperature far lower than in prior-art methods, whereby a single crystal film is formed.
摘要翻译：连续覆盖单晶基板和绝缘膜的暴露表面的非晶或多晶膜沉积在超高真空中，然后进行热处理。在远低于现有技术方法的温度下对该膜进行固相外延生长，从而形成单晶膜。

22. 发明授权

US08963124B2 Semiconductor device including a plurality of different functional elements and method of manufacturing the same 有权
标题翻译：包括多个不同功能元件的半导体器件及其制造方法
公开(公告)号：US08963124B2
公开(公告)日：2015-02-24
申请号：US12405505
申请日：2009-03-17
申请人： Masanobu Miyao , Hiroshi Nakashima , Taizoh Sadoh , Ichiro Mizushima , Masaki Yoshimaru
发明人： Masanobu Miyao , Hiroshi Nakashima , Taizoh Sadoh , Ichiro Mizushima , Masaki Yoshimaru
IPC分类号： H01L29/06 , H01L31/00 , H01L27/06 , H01L21/02 , H01L29/66
CPC分类号： H01L27/0617 , H01L21/02672 , H01L29/66984
摘要： At least first and second Si1-xGex (0≦x≦1) layers are formed on an insulating film. At least first and second material layers are formed correspondingly to the at least first and second Si1-xGex (0≦x≦1) layers. A lattice constant of the first Si1-xGex (0≦x≦1) layer is matched with a lattice constant of the first material layer. A lattice constant of the second Si1-xGex (0≦x≦1) layer is matched with a lattice constant of the second material layer.
摘要翻译：在绝缘膜上形成至少第一和第二Si1-xGex（0＆nlE; x＆lt; 1; 1）层。至少第一和第二材料层对应于至少第一和第二Si1-xGex（0＆amp; n1; x＆amp; l1; 1）层形成。第一Si1-xGex（0＆nlE; x＆nlE; 1）层的晶格常数与第一材料层的晶格常数相匹配。第二Si1-xGex（0＆nlE; x＆nlE; 1）层的晶格常数与第二材料层的晶格常数相匹配。

23. 发明授权

US08304810B2 Semiconductor device and semiconductor substrate having selectively etched portions filled with silicon germanium 失效
标题翻译：具有填充有硅锗的选择性蚀刻部分的半导体器件和半导体衬底
公开(公告)号：US08304810B2
公开(公告)日：2012-11-06
申请号：US12505942
申请日：2009-07-20
申请人： Nobuyuki Sugii , Kiyokazu Nakagawa , Shinya Yamaguchi , Masanobu Miyao
发明人： Nobuyuki Sugii , Kiyokazu Nakagawa , Shinya Yamaguchi , Masanobu Miyao
IPC分类号： H01L29/66
CPC分类号： H01L21/823807 , H01L29/1054 , H01L29/7782 , H01L29/7848
摘要： In order to provide a semiconductor device having a field effect transistor with a low power consumption and a high speed by use of the combination of Si and an element such as Ge, C or the like of the same group as Si, a strain is applied by a strain applying semiconductor layer 2 to a channel forming layer I having a channel of the field effect transistor formed therein so that the mobility of carriers in the channel is made larger than the mobility of carriers in that material of the channel forming layer which is unstrained.
摘要翻译：为了提供一种具有低功耗和高速的场效晶体管的半导体器件，其通过使用Si和诸如与Si相同的组的诸如Ge，C等元素的组合，施加应变通过将半导体层2施加到其中形成有场效应晶体管的沟道的沟道形成层I的应变，使得沟道中的载流子的迁移率大于沟道形成层的材料中的载流子的迁移率，无限制

24. 发明授权

US07317207B2 Semiconductor device, method of making the same and liquid crystal display device 有权
标题翻译：半导体装置及其制造方法以及液晶显示装置
公开(公告)号：US07317207B2
公开(公告)日：2008-01-08
申请号：US11146016
申请日：2005-06-07
申请人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
发明人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译：为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

25. 发明申请

US20050230683A1 Semiconductor device, method of making the same and liquid crystal display device 有权
公开(公告)号：US20050230683A1
公开(公告)日：2005-10-20
申请号：US11146016
申请日：2005-06-07
申请人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
发明人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/417 , H01L29/786
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.

26. 发明授权

US06529304B1 Optical communication equipment and system 失效
标题翻译：光通信设备及系统
公开(公告)号：US06529304B1
公开(公告)日：2003-03-04
申请号：US09381199
申请日：1999-09-17
申请人： Yoshinobu Kimura , Masanobu Miyao , Kiyokazu Nakagawa , Nobuyuki Sugii , Takuya Maruizumi
发明人： Yoshinobu Kimura , Masanobu Miyao , Kiyokazu Nakagawa , Nobuyuki Sugii , Takuya Maruizumi
IPC分类号： H04B1000
CPC分类号： H04B10/564 , G02B6/3636 , G02B6/3652 , G02B6/4202 , H01S5/0262 , H01S5/0264 , H01S5/0425 , H01S5/1228 , H04B10/291 , H04B10/504
摘要： Configurations of a light signal communication apparatus and an optical communication system suitable for speeding-up of the transmission of information based on a light signal and an increase in the capacity for the information transmission are disclosed. On the light signal transmitting side, excitation light is supplied to an active medium in accordance with a transmission signal to cause induced emission within the active medium, thereby generating signal light. The excitation light causes spontaneously-emitted light to fall on a semiconductor layer, and a voltage pulse corresponding to transmission information is applied to modulate the refractive index of the semiconductor layer, thereby Bragg-reflecting a specific wavelength component, after which it is sent to the active medium as the excitation light. The Bragg reflection and induced emission incident to it exhibit excellent response to a voltage signal having a pulse width of 1×10−9 seconds or less. It is therefore possible to implement an optical communication system having a transmission rate up to 100 Gb/s with one light signal.
摘要翻译：公开了一种适于基于光信号加速信息传输和信息传输容量增加的光信号通信装置和光通信系统的配置。在光信号发送侧，根据发送信号将激励光提供给有源介质，以在有源介质内产生感应发射，从而产生信号光。激发光引起自发发射的光落在半导体层上，施加与透射信息相对应的电压脉冲，以调制半导体层的折射率，由此布拉格反射特定波长分量，之后将其发送到活性介质作为激发光。入射到其的布拉格反射和感应发射对脉冲宽度为1×10-9秒或更小的电压信号表现出优异的响应。因此，可以通过一个光信号实现具有高达100Gb / s的传输速率的光通信系统。

27. 发明授权

US4984048A Semiconductor device with buried side contact 失效
标题翻译：半导体器件具有掩埋侧接触
公开(公告)号：US4984048A
公开(公告)日：1991-01-08
申请号：US216536
申请日：1988-07-08
申请人： Kazuhiko Sagara , Tokuo Kure , Eiichi Murakami , Tohru Nakamura , Masanobu Miyao , Masao Kondo , Akitoshi Ishizaka , Yoichi Tamaki
发明人： Kazuhiko Sagara , Tokuo Kure , Eiichi Murakami , Tohru Nakamura , Masanobu Miyao , Masao Kondo , Akitoshi Ishizaka , Yoichi Tamaki
IPC分类号： H01L21/74 , H01L21/763 , H01L29/06 , H01L29/417 , H01L29/732 , H01L29/737
CPC分类号： H01L29/0649 , H01L21/743 , H01L21/763 , H01L29/41716 , H01L29/7325 , H01L29/7327 , H01L29/7378
摘要： Polycrystalline silicon which is provided within a trench for isolating a plurality of bipolar transistors from each other is electrically connected to the collector of one of the bipolar transistor. Since the trench for isolation can also be used to lead out the collector electrode, the required area is minimized. Thus, the arrangement is effective in creasing the integration density.
摘要翻译：设置在用于将多个双极晶体管彼此隔离的沟槽内的多晶硅电连接到双极晶体管之一的集电极。由于用于隔离的沟槽也可以用于引出集电极，因此所需的面积被最小化。因此，这种布置在增加集成密度方面是有效的。

28. 发明授权

US4984038A Semiconductor memory and method of producing the same 失效
标题翻译：半导体存储器及其制造方法
公开(公告)号：US4984038A
公开(公告)日：1991-01-08
申请号：US194980
申请日：1988-05-17
申请人： Hideo Sunami , Makoto Ohkura , Masanobu Miyao , Kikuo Kusukawa , Masahiro Moniwa , ShinIchiro Kimura , Terunori Warabisako , Tokuo Kure
发明人： Hideo Sunami , Makoto Ohkura , Masanobu Miyao , Kikuo Kusukawa , Masahiro Moniwa , ShinIchiro Kimura , Terunori Warabisako , Tokuo Kure
IPC分类号： H01L21/762 , H01L27/108
CPC分类号： H01L21/762 , H01L27/10841
摘要： The side wall part of a recess dug in a Si substrate is used as the major part of the electrode surface of a capacitor, whereby the electrode area is enlarged without enlarging a plane area. Thus, a desired capacitor capacitance can be attained without increasing the breakdown of an insulator film ascribable to the conventional approach of thinning of the insulator film. In addition, a vertical switching transistor is formed on the Si substrate, whereby the Si substrate can be entirely utilized for the formation of the capacitor.

29. 发明授权

US4351674A Method of producing a semiconductor device 失效
标题翻译：半导体装置的制造方法
公开(公告)号：US4351674A
公开(公告)日：1982-09-28
申请号：US182825
申请日：1980-08-29
申请人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
发明人： Isao Yoshida , Yasuo Wada , Masao Tamura , Masanobu Miyao , Makoto Ohkura , Nobuyoshi Natsuaki , Takashi Tokuyama
IPC分类号： H01L27/04 , H01L21/22 , H01L21/268 , H01L21/3215 , H01L21/822 , H01L29/78 , H01L21/265 , H01L21/263
CPC分类号： H01L21/268 , H01L21/32155 , Y10S148/091
摘要： A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistance.Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
摘要翻译：含有高浓度杂质的区域和与其相邻的期望区域通过用激光束照射而熔化，从而将横向杂质扩散到所需区域并使所需区域呈现低电阻。由于该方法只能执行杂质的横向扩散而不影响其它部分，因此形成高击穿电压MIS-FET，电阻等非常有用。

30. 发明申请

US20080111134A1 SEMICONDUCTOR DEVICE, METHOD OF MAKING THE SAME AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
标题翻译：半导体器件，其制造方法和液晶显示器件
公开(公告)号：US20080111134A1
公开(公告)日：2008-05-15
申请号：US11969488
申请日：2008-01-04
申请人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
发明人： Shinya Yamaguchi , Masanobu Miyao , Nobuyuki Sugii , Seang-kee Park , Kiyokazu Nakagawa
IPC分类号： H01L29/10 , H01L21/00
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译：为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。

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