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21. 发明授权

US06897458B2 Electron beam exposure system 有权
标题翻译：电子束曝光系统
公开(公告)号：US06897458B2
公开(公告)日：2005-05-24
申请号：US10699246
申请日：2003-10-30
申请人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent van Veen , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent van Veen , Pieter Kruit
IPC分类号： A61N5/00 , G01Q30/02 , G01Q30/08 , G03B1/00 , H01J37/08 , H01J37/30 , H01J37/304 , H01J37/317
CPC分类号： H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optimal system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
摘要翻译：本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 聚焦电子最优系统，其包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦到小于300nm的横截面，以及用于将其曝光表面保持在其上的目标保持器其图案将在聚焦电子光学系统的第一焦平面中转印。

22. 再颁专利

USRE44908E1 Electron beam exposure system 有权
标题翻译：电子束曝光系统
公开(公告)号：USRE44908E1
公开(公告)日：2014-05-27
申请号：US13343036
申请日：2012-01-04
申请人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
IPC分类号： H01J37/30 , H01J37/304 , H01J37/06
CPC分类号： H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
摘要翻译：本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器其图案将在聚焦电子光学系统的第一焦平面中转印。

23. 发明授权

US08445869B2 Projection lens arrangement 有权
标题翻译：投影镜头布置
公开(公告)号：US08445869B2
公开(公告)日：2013-05-21
申请号：US12905126
申请日：2010-10-15
申请人： Marco Jan-Jaco Wieland , Alexander Hendrik Vincent Van Veen
发明人： Marco Jan-Jaco Wieland , Alexander Hendrik Vincent Van Veen
IPC分类号： H01J37/10 , H01J37/147 , H01J37/30
CPC分类号： H01J37/10 , B82Y10/00 , B82Y40/00 , H01J37/147 , H01J37/1471 , H01J37/1478 , H01J37/30 , H01J37/3007 , H01J37/3177 , H01J2237/0437 , H01J2237/0492
摘要： The invention relates to a charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system has a charged particle source, an aperture array, a beamlet manipulator, a beamlet blanker, and an array of projection lens systems. The charged particle source is configured to generate a charged particle beam. The aperture array is configured to define separate beamlets from the generated beam. The beamlet manipulator is configured to converge groups of the beamlets towards a common point of convergence for each group. The beamlet blanker is configured to controllably blank beamlets in the groups of beamlets. Finally, the array of projection lens systems is configured to project unblanked beamlets of the groups of beamlets on to the surface of the target. The beamlet manipulator is further adapted to converge each of the groups of beamlets towards a point corresponding to one of the projection lens systems.
摘要翻译：本发明涉及一种用于使用多个子束曝光目标的带电粒子多子束系统。该系统具有带电粒子源，孔径阵列，子束操纵器，子束消除器和投影透镜系统阵列。带电粒子源被配置为产生带电粒子束。孔径阵列被配置为从所产生的光束定义单独的子束。子束操纵器被配置为将每个子束的组合朝向每个组的公共收敛点收敛。子束消除器被配置为可控地遮挡子束组中的子束。最后，投影透镜系统的阵列被配置成将子束组的未平坦的子束投影到目标的表面上。子束操纵器还适于将每个子束组朝向对应于投影透镜系统中的一个的点聚焦。

24. 发明授权

US08653485B2 Projection lens arrangement 有权
标题翻译：投影镜头布置
公开(公告)号：US08653485B2
公开(公告)日：2014-02-18
申请号：US13397814
申请日：2012-02-16
申请人： Marco Jan-Jaco Wieland , Alexander Hendrik Vincent Van Veen
发明人： Marco Jan-Jaco Wieland , Alexander Hendrik Vincent Van Veen
IPC分类号： H01J37/10 , H01J37/147 , H01J37/30
CPC分类号： H01J37/10 , B82Y10/00 , B82Y40/00 , H01J37/147 , H01J37/1471 , H01J37/1478 , H01J37/30 , H01J37/3007 , H01J37/3177 , H01J2237/0437 , H01J2237/0492
摘要： The invention relates to a charged particle multi-beamlet lithographic system for exposing a target using a plurality of beamlets. The system comprises a beamlet generator for generating a plurality of beamlets, a beamlet blanker for controllably blanking beamlets, and an array of projection lens systems for projecting unblanked beamlets on to the surface of the target. The beamlet generator comprises at least one charged particle source for generating a charged particle beam, a sub-beam generator for defining a plurality of sub-beams from the charged particle beam, a sub-beam manipulator array for influencing the sub-beams, and an aperture array for defining beamlets from the sub-beams.
摘要翻译：本发明涉及一种用于使用多个子束曝光目标的带电粒子多子束光刻系统。该系统包括用于产生多个子束的子波发生器，用于可控制地遮挡子束的子束消除器，以及用于将未平坦化的子束投影到目标表面上的投影透镜系统的阵列。小波发生器包括用于产生带电粒子束的至少一个带电粒子源，用于从带电粒子束定义多个子光束的子光束发生器，用于影响子光束的子光束操纵器阵列，以及用于从子光束定义子束的孔径阵列。

25. 发明授权

US08502176B2 Imaging system 有权
标题翻译：成像系统
公开(公告)号：US08502176B2
公开(公告)日：2013-08-06
申请号：US12994230
申请日：2009-05-22
申请人： Marco Jan-Jaco Wieland , Alexander Hendrik Vincent Van Veen
发明人： Marco Jan-Jaco Wieland , Alexander Hendrik Vincent Van Veen
IPC分类号： G21K5/00
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J2237/0435 , H01J2237/0492
摘要： A charged particle multi-beamlet system for exposing a target (11) using a plurality of beamlets. The system comprises a charged particle source (1) for generating a charged particle beam (20), a beamlet aperture array (4D) for defining groups of beamlets (23) from the generated beam, a beamlet blanker array (6) comprising an array of blankers for controllably blanking the beamlets (23), a beam stop array (8) for blanking beamlets (23) deflected by the blankers, the beam stop array (8) comprising an array of apertures, each beam stop aperture corresponding to one or more of the blankers, and an array of projection lens systems (10) for projecting beamlets on to the surface of the target. The system images the source (1) onto a plane at the beam stop array (8), at the effective lens plane of the projection lens systems (10), or between the beam stop array (8) and the effective lens plane of the projection lens systems (10), and the system images the beamlet aperture array (4D) onto the target (11).
摘要翻译：一种用于使用多个子束曝光目标（11）的带电粒子多子束系统。该系统包括用于产生带电粒子束（20）的带电粒子源（1），用于从产生的束限定子束组23的子束孔阵列（4D），包括阵列的子束消隐器阵列（6）用于可控地消隐子束（23）的阻挡阵列（8），用于冲裁由阻挡物偏转的小束（23）的射束停止阵列（8），包括孔阵列的射束停止阵列（8），每个光束停止孔对应于一个或更多的阻挡物，以及用于将子束投影到靶的表面上的投影透镜系统（10）的阵列。系统将光源（1）成像到光束停止阵列（8）的平面上，在投影透镜系统（10）的有效透镜平面处，或在光束停止阵列（8）和有效透镜平面投影透镜系统（10），并且系统将子束孔径阵列（4D）成像到目标（11）上。

26. 再颁专利

USRE44240E1 Electron beam exposure system 有权
标题翻译：电子束曝光系统
公开(公告)号：USRE44240E1
公开(公告)日：2013-05-28
申请号：US12189817
申请日：2008-08-12
申请人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
IPC分类号： H01J37/30 , H01J37/304
CPC分类号： H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
摘要翻译：本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器其图案将在聚焦电子光学系统的第一焦平面中转印。

27. 发明授权

US09305747B2 Data path for lithography apparatus 有权
标题翻译：光刻设备的数据路径
公开(公告)号：US09305747B2
公开(公告)日：2016-04-05
申请号：US13290139
申请日：2011-11-07
申请人： Marco Jan-Jaco Wieland , Teunis Van De Peut , Floris Pepijn Van Der Wilt , Ernst Habekotte
发明人： Marco Jan-Jaco Wieland , Teunis Van De Peut , Floris Pepijn Van Der Wilt , Ernst Habekotte
IPC分类号： H01J37/317 , B82Y10/00 , B82Y40/00
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J2237/31762 , H01J2237/31774
摘要： The invention relates to a maskless lithography system for patterning a target using a plurality of charged particle beamlets. The system comprises an electron optical column including a blanker array for modulating the beamlets. The blanker array includes receivers for receiving data signals and blanker elements for modulating the beamlets in accordance with the data signals. The system further comprises a data path comprising a preprocessing system for processing pattern data and a plurality of transmission channels for transmitting processed pattern data to the blanker elements. The data path further comprises a pattern streaming system for receiving pattern data and generating data signals. First and second channel selectors connect a subset of selected transmission channels for pattern data transmission. The first channel selector is connected between the preprocessing system and the transmission channels. The second channel selector is connected between the channels and the blanker elements.
摘要翻译：本发明涉及一种用于使用多个带电粒子子束来图案化靶的无掩模光刻系统。该系统包括电子光学柱，其包括用于调制子束的阻挡阵列。消隐器阵列包括用于接收数据信号的接收器和用于根据数据信号调制子束的消隐元件。该系统还包括数据路径，该数据路径包括用于处理模式数据的预处理系统和用于将处理后的图案数据发送到消隐元件的多个传输通道。数据路径还包括用于接收模式数据和产生数据信号的模式流传输系统。第一和第二信道选择器连接用于模式数据传输的所选传输信道的子集。第一通道选择器连接在预处理系统和传输通道之间。第二通道选择器连接在通道和消声器元件之间。

28. 发明授权

US08598544B2 Method of generating a two-level pattern for lithographic processing and pattern generator using the same 有权
标题翻译：用于生成用于光刻处理的二级图案的方法和使用其的图案生成器
公开(公告)号：US08598544B2
公开(公告)日：2013-12-03
申请号：US13293370
申请日：2011-11-10
申请人： Teunis Van De Peut , Marco Jan-Jaco Wieland
发明人： Teunis Van De Peut , Marco Jan-Jaco Wieland
IPC分类号： H01J37/06 , H01J37/07 , G21K5/10
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00
摘要： The invention relates to a method of generating a two-level pattern for lithographic processing by multiple beamlets. In the method, first a pattern in vector format is provided. The vector format pattern is then converted into a pattern in pixmap format. Finally, a two-level pattern is formed by application of error diffusion on the pixmap format pattern.
摘要翻译：本发明涉及一种生成用于通过多个子束进行光刻处理的二级图案的方法。在该方法中，首先提供矢量格式的图案。然后将矢量格式图案转换成像素图格式的图案。最后，通过在像素图格式图案上应用误差扩散形成两层图案。

29. 发明授权

US08242470B2 Optical switching in a lithography system 有权
标题翻译：光刻系统中的光开关
公开(公告)号：US08242470B2
公开(公告)日：2012-08-14
申请号：US11653107
申请日：2007-01-11
申请人： Marco Jan-Jaco Wieland , Johannes Christiaan van 't Spijker , Remco Jager , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Johannes Christiaan van 't Spijker , Remco Jager , Pieter Kruit
IPC分类号： G21K5/10 , G03B27/42 , G03B27/54
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , G03B27/52 , G03F7/70291 , G03F7/70508 , G03F7/70825 , G03F7/70991 , H01J37/045 , H01J37/3174 , H01J37/3177 , H01J2237/0432 , H01J2237/0435 , H01J2237/0437 , H01J2237/2482
摘要： A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.
摘要翻译：一种用于将图案转印到目标表面上的无掩模光刻系统。用于产生多个子束的至少一个光束发生器。多个调制器调制小波束的幅度，并且控制单元控制调制器。控制单元生成并将模式数据传送到调制器，以控制每个单独子束的幅度。控制单元包括用于存储图案数据的至少一个数据存储器，用于从数据存储器读出数据的至少一个读出单元，至少一个数据转换器，用于将从数据存储器读出的数据转换为至少一个调制光束和至少一个用于将至少一个调制光束发射到调制调制器的光发射器。

30. 发明授权

US07842936B2 Lithography system and projection method 有权
标题翻译：光刻系统和投影方法
公开(公告)号：US07842936B2
公开(公告)日：2010-11-30
申请号：US11716452
申请日：2007-03-09
申请人： Pieter Kruit , Remco Jager , Stijn Willem Karel Herman Steenbrink , Marco Jan-Jaco Wieland
发明人： Pieter Kruit , Remco Jager , Stijn Willem Karel Herman Steenbrink , Marco Jan-Jaco Wieland
IPC分类号： G21K5/04
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , G03F7/70291 , G03F7/70383 , G03F7/70508 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31766 , H01J2237/31771 , H01L21/67282
摘要： The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.
摘要翻译：本发明涉及一种探针形成光刻系统，用于使用黑白写入策略（即写入或不写入网格单元）在诸如晶片的目标表面上产生图案，从而将所述图案划分在包括网格单元的格子上所述图案包括尺寸大于网格单元的尺寸的特征，在每个单元中，所述探针被切换为“开”或“关”，其中所述目标上的探针覆盖比网格单元大得多的表面积，以及其中在特征内，在探针大小的范围以及这种系统可以基于的方法上实现黑白写入的位置相关分布。

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