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1. 发明授权

US06897458B2 Electron beam exposure system 有权
标题翻译：电子束曝光系统
公开(公告)号：US06897458B2
公开(公告)日：2005-05-24
申请号：US10699246
申请日：2003-10-30
申请人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent van Veen , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent van Veen , Pieter Kruit
IPC分类号： A61N5/00 , G01Q30/02 , G01Q30/08 , G03B1/00 , H01J37/08 , H01J37/30 , H01J37/304 , H01J37/317
CPC分类号： H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optimal system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
摘要翻译：本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 聚焦电子最优系统，其包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦到小于300nm的横截面，以及用于将其曝光表面保持在其上的目标保持器其图案将在聚焦电子光学系统的第一焦平面中转印。

2. 再颁专利

USRE45049E1 Electron beam exposure system 有权
公开(公告)号：USRE45049E1
公开(公告)日：2014-07-29
申请号：US13343038
申请日：2012-01-04
申请人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
IPC分类号： H01J37/30 , H01J37/304
CPC分类号： H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

3. 发明授权

US07091504B2 Electron beam exposure system 有权
公开(公告)号：US07091504B2
公开(公告)日：2006-08-15
申请号：US11128512
申请日：2005-05-12
申请人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent van Veen , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent van Veen , Pieter Kruit
IPC分类号： H01J37/30 , H01J37/304
CPC分类号： H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

4. 再颁专利

USRE44240E1 Electron beam exposure system 有权
标题翻译：电子束曝光系统
公开(公告)号：USRE44240E1
公开(公告)日：2013-05-28
申请号：US12189817
申请日：2008-08-12
申请人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
IPC分类号： H01J37/30 , H01J37/304
CPC分类号： H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
摘要翻译：本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器其图案将在聚焦电子光学系统的第一焦平面中转印。

5. 再颁专利

USRE44908E1 Electron beam exposure system 有权
标题翻译：电子束曝光系统
公开(公告)号：USRE44908E1
公开(公告)日：2014-05-27
申请号：US13343036
申请日：2012-01-04
申请人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Vincent Van Veen , Pieter Kruit
IPC分类号： H01J37/30 , H01J37/304 , H01J37/06
CPC分类号： H01J3/02 , B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/0435 , H01J2237/06308 , H01J2237/06375 , H01J2237/3045
摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.
摘要翻译：本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器其图案将在聚焦电子光学系统的第一焦平面中转印。

6. 发明授权

US09105439B2 Projection lens arrangement 有权
标题翻译：投影镜头布置
公开(公告)号：US09105439B2
公开(公告)日：2015-08-11
申请号：US13304427
申请日：2011-11-25
申请人： Marco Jan Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Van Veen , Pieter Kruit , Stijn Willem Steenbrink
发明人： Marco Jan Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Van Veen , Pieter Kruit , Stijn Willem Steenbrink
IPC分类号： H01J37/317 , H01J37/12 , B82Y10/00 , B82Y40/00 , H01J37/30
CPC分类号： H01J37/12 , B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177 , H01J2237/0435 , H01J2237/1205 , H01J2237/121 , H01J2237/151
摘要： The invention relates to a charged particle optical system comprising a beamlet generator for generating a plurality of charged particle beamlets, an electrostatic deflection system for deflecting the beamlets, and a projection lens system for directing the beamlets from the beamlet generator towards the target. The electrostatic deflection system comprises a first electrostatic deflector and a second electrostatic deflector for scanning charged particle beamlets over the target. The second electrostatic deflector is located behind the first electrostatic deflector so that, during operation of the system, a beamlet generated by the beamlet generator passes both of the electrostatic deflectors. During operation of the first and second electrostatic deflectors the system is adapted to apply voltages on the first electrostatic deflector and the second electrostatic deflector of opposite sign.
摘要翻译：本发明涉及一种带电粒子光学系统，其包括用于产生多个带电粒子子束的子束发生器，用于偏转子束的静电偏转系统，以及用于将子束从小波发生器引导到目标的投影透镜系统。静电偏转系统包括用于在靶上扫描带电粒子束的第一静电偏转器和第二静电偏转器。第二静电偏转器位于第一静电偏转器的后面，使得在系统操作期间，由小梁发生器产生的子束通过两个静电偏转器。在第一和第二静电偏转器的操作期间，系统适于在第一静电偏转器和相反符号的第二静电偏转器上施加电压。

7. 发明授权

US08089056B2 Projection lens arrangement 有权
标题翻译：投影镜头布置
公开(公告)号：US08089056B2
公开(公告)日：2012-01-03
申请号：US12393049
申请日：2009-02-26
申请人： Marco Jan Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Van Veen , Pieter Kruit , Stijn Willem Herman Karel Steenbrink
发明人： Marco Jan Jaco Wieland , Bert Jan Kampherbeek , Alexander Hendrik Van Veen , Pieter Kruit , Stijn Willem Herman Karel Steenbrink
IPC分类号： H01J37/12 , H01J37/30
CPC分类号： H01J37/12 , B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177 , H01J2237/0435 , H01J2237/1205 , H01J2237/121 , H01J2237/151
摘要： A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets.
摘要翻译：一种用于使用多个子束曝光目标的带电粒子多子束系统。该系统包括在其中形成有多个孔的第一板，形成在每个孔的位置处的多个静电投影透镜系统，使得每个电子束通过相应的投影透镜系统。这些孔具有足够均匀的放置和尺寸以使得能够使用公共控制电压将子束聚焦到靶的表面上。优选地，静电投影透镜系统由公共电信号控制，以将电子束聚焦在表面上，而无需校正各个电子束的聚焦或路径。

8. 发明授权

US09208989B2 Lithography system and method of refracting 有权
$Lithography system and method of refracting$
标题翻译：光刻系统和折射方法
公开(公告)号：US09208989B2
公开(公告)日：2015-12-08
申请号：US13295243
申请日：2011-11-14
申请人： Alexander Hendrik Vincent Van Veen , Yanxia Zhang , Gun Sari Mari Berglund , Pieter Kruit
发明人： Alexander Hendrik Vincent Van Veen , Yanxia Zhang , Gun Sari Mari Berglund , Pieter Kruit
IPC分类号： H01J3/26 , H01J37/09
CPC分类号： H01J37/09 , H01J2237/002 , H01J2237/0453 , H01J2237/1534 , H01J2237/31774
摘要： A charged particle lithography system for transferring a pattern onto the surface of a target, such as a wafer, comprising a charged particle source adapted for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam, the converging means comprising a first electrode, and an aperture array element comprising a plurality of apertures, the aperture array element forming a second electrode, wherein the system is adapted for creating an electric field between the first electrode and the second electrode.
摘要翻译：一种用于将图案转印到诸如晶片的靶的表面上的带电粒子光刻系统，包括适于产生发散带电粒子束的带电粒子源，用于折射所述发散带电粒子束的会聚装置，所述会聚装置包括第一电极和包括多个孔的孔阵列元件，所述孔阵列元件形成第二电极，其中所述系统适于在所述第一电极和所述第二电极之间产生电场。

9. 发明授权

US08242470B2 Optical switching in a lithography system 有权
标题翻译：光刻系统中的光开关
公开(公告)号：US08242470B2
公开(公告)日：2012-08-14
申请号：US11653107
申请日：2007-01-11
申请人： Marco Jan-Jaco Wieland , Johannes Christiaan van 't Spijker , Remco Jager , Pieter Kruit
发明人： Marco Jan-Jaco Wieland , Johannes Christiaan van 't Spijker , Remco Jager , Pieter Kruit
IPC分类号： G21K5/10 , G03B27/42 , G03B27/54
CPC分类号： G03F7/70383 , B82Y10/00 , B82Y40/00 , G03B27/52 , G03F7/70291 , G03F7/70508 , G03F7/70825 , G03F7/70991 , H01J37/045 , H01J37/3174 , H01J37/3177 , H01J2237/0432 , H01J2237/0435 , H01J2237/0437 , H01J2237/2482
摘要： A maskless lithography system for transferring a pattern onto the surface of a target. At least one beam generator for generating a plurality of beamlets. A plurality of modulators modulate the magnitude of a beamlet, and a control unit controls of the modulators. The control unit generates and delivers pattern data to the modulators for controlling the magnitude of each individual beamlet. The control unit includes at least one data storage for storing the pattern data, at least one readout unit for reading out the data from the data storage, at least one data converter for converting the data that is read out from the data storage into at least one modulated light beam, and at least one optical transmitter for transmitting the at least one modulated light beam to the modulation modulators.
摘要翻译：一种用于将图案转印到目标表面上的无掩模光刻系统。用于产生多个子束的至少一个光束发生器。多个调制器调制小波束的幅度，并且控制单元控制调制器。控制单元生成并将模式数据传送到调制器，以控制每个单独子束的幅度。控制单元包括用于存储图案数据的至少一个数据存储器，用于从数据存储器读出数据的至少一个读出单元，至少一个数据转换器，用于将从数据存储器读出的数据转换为至少一个调制光束和至少一个用于将至少一个调制光束发射到调制调制器的光发射器。

10. 发明授权

US08325321B2 Lithography system, method of heat dissipation and frame 有权
标题翻译：平版印刷系统，散热方法和框架
公开(公告)号：US08325321B2
公开(公告)日：2012-12-04
申请号：US11880833
申请日：2007-07-24
申请人： Pieter Kruit , Michel Pieter Dansberg , Marco Jan-Jaco Wieland
发明人： Pieter Kruit , Michel Pieter Dansberg , Marco Jan-Jaco Wieland
IPC分类号： F28D15/00 , G03B27/42 , G03B27/52 , G03B27/58 , G03B27/62
CPC分类号： G03F7/70875
摘要： The present invention relates to a lithography system for projecting an image or an image pattern on to a target such as a wafer. Energy that is accumulated in the target by the projection of the image or image pattern is removed from said target, such that expansion by local and/or overall heating is limited to a relevant pre-defined value, and wherein such heat removal is realised by the use of a phase transition in a heat absorbing material that is brought into thermal contact with said target. As a further elaboration, such material may be applied in combination with a further material having a superior coefficient of heat transport, and may be incorporated in an emulsion comprising a material having a superior coefficient of heat transfer. Said material may e.g. be adhered to a bottom face of the target, and may also be included in a frame.
摘要翻译：本发明涉及用于将图像或图像图案投影到诸如晶片的靶上的光刻系统。通过图像或图像图案的投影而累积在目标物中的能量从所述目标去除，使得通过局部和/或整体加热的膨胀被限制到相关的预定义值，并且其中这种除热由在与所述靶导致热接触的吸热材料中使用相变。作为进一步的阐述，这种材料可以与具有优异传热系数的另外的材料结合使用，并且可以结合在包含具有优良传热系数的材料的乳液中。所述材料可以例如粘附到目标的底面，并且也可以包括在框架中。

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