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21. 发明授权

US06238589B1 Methods for monitoring components in the TiW etching bath used in the fabrication of C4s 失效
标题翻译：用于监测用于制造C4的TiW蚀刻液中的组分的方法
公开(公告)号：US06238589B1
公开(公告)日：2001-05-29
申请号：US09138442
申请日：1998-08-21
申请人： Emanuel Israel Cooper , Madhav Datta , Thomas Edward Dinan, Jr. , Thomas Safron Kanarsky , Michael Barry Pike , Ravindra Vaman Shenoy
发明人： Emanuel Israel Cooper , Madhav Datta , Thomas Edward Dinan, Jr. , Thomas Safron Kanarsky , Michael Barry Pike , Ravindra Vaman Shenoy
IPC分类号： G01N3116
CPC分类号： G01N25/4846 , G01N31/162 , G01N31/164 , Y10T436/156666 , Y10T436/18
摘要： Monitoring techniques have been developed for direct/indirect determination of metal etching bath components and for managing their replenishment. The disclosed methods have been successfully employed to make TiW etching a robust process that provides minimized and controlled undercutting of ball limited metallurgy and mechanical reliable C4s. A metal etching solution is monitored and replenished by measuring the sulfate concentration of a hydrogen peroxide, soluble salt, and soluble EDTA salt etchant. Turbidimetric titration conditions are used to measure and compare opaqueness of liquids by viewing light through them and determining how much light is cut off. Additional sulfate is added to maintain the sulfate concentration. Water and/or fresh etchant is added to compensate for evaporation or drag.
摘要翻译：已经开发了用于直接/间接测定金属蚀刻浴组分并用于管理其补充的监测技术。所公开的方法已被成功地用于制造TiW蚀刻鲁棒的工艺，其提供球限制冶金和机械可靠的C4的最小化和受控的底切。通过测量过氧化氢，可溶性盐和可溶性EDTA盐蚀刻剂的硫酸盐浓度来监测和补充金属蚀刻溶液。浊度滴定条件用于通过观察它们的光线来测量和比较液体的不透明度，并确定多少光被切断。加入额外的硫酸盐以保持硫酸盐浓度。添加水和/或新鲜蚀刻剂以补偿蒸发或阻力。

22. 发明授权

US5796168A Metallic interconnect pad, and integrated circuit structure using same, with reduced undercut 失效
标题翻译：金属互连焊盘和使用相同的集成电路结构，减少了底切
公开(公告)号：US5796168A
公开(公告)日：1998-08-18
申请号：US711433
申请日：1996-09-06
申请人： Madhav Datta , Thomas Safron Kanarsky , Michael Barry Pike , Ravindra Vaman Shenoy
发明人： Madhav Datta , Thomas Safron Kanarsky , Michael Barry Pike , Ravindra Vaman Shenoy
IPC分类号： H01L21/60 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/11 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： Reduced undercutting of a titanium-tungsten layer in a ball limiting metallurgy (BLM) is achieved in the preparation of solder ball interconnect structures by removing metal oxide film which forms on the titanium-tungsten layer and etching the titanium-tungsten layer in different steps. Removing the metal oxide with an acid solution prior to etching the titanium-tungsten layer provides for a more uniform etch of the titanium-tungsten layer.
摘要翻译：通过去除在钛 - 钨层上形成的金属氧化物膜并以不同的步骤蚀刻钛 - 钨层，在制备焊球互连结构中实现了在极限极限冶金（BLM）中减少钛钨层的底切。在蚀刻钛 - 钨层之前用酸溶液去除金属氧化物提供对钛 - 钨层的更均匀的蚀刻。

23. 发明授权

US5476575A Fabrication of moly masks by electroetching 失效
标题翻译：通过电蚀制作钼掩模
公开(公告)号：US5476575A
公开(公告)日：1995-12-19
申请号：US285371
申请日：1994-08-03
申请人： Denis J. Brophy , Madhav Datta , Derek B. Harris , Matthew T. Kurdziel , Frank S. Ryan
发明人： Denis J. Brophy , Madhav Datta , Derek B. Harris , Matthew T. Kurdziel , Frank S. Ryan
IPC分类号： C25F3/14 , G03F1/20 , G03F1/68 , H01L21/3063 , H01L21/308 , C25F3/02 , C25F7/00
CPC分类号： G03F1/20 , C25F3/14 , G03F1/68
摘要： Masks for microelectronics technology are fabricated by electrochemical etching. Molybdenum sheet or foil is masked with patterned photoresist on one side, and a mating, mirror-image pattern of photoresist is applied on the other side of the foil in exact registration with the first pattern. The foil is immersed in electrolyte (an aqueous solution of sodium nitrate, sodium hydroxide, thiourea, and surfactant) along with nickel anode plates held parallel to the foil surfaces 1-3 cm away. The anode plate is made slightly smaller than the mask area of the foil. When voltage is applied across the cell, the foil is etched through to form vias. The electrolyte is pumped across the surface of the foil and uniform flow velocity over the foil surface is achieved.
摘要翻译：用于微电子技术的掩模是通过电化学蚀刻来制造的。钼片或箔在一侧被图案化的光致抗蚀剂掩蔽，并且光刻胶的匹配的镜像图案被施加在与第一图案精确对准的箔的另一侧上。将箔浸入电解液（硝酸钠，氢氧化钠，硫脲和表面活性剂的水溶液）以及与1-3cm距离的箔表面平行的镍阳极板。使阳极板略微小于箔的掩模面积。当跨过电池施加电压时，箔被蚀刻通过以形成通孔。电解质被泵送穿过箔的表面并实现在箔表面上的均匀流速。

24. 发明授权

US5217586A Electrochemical tool for uniform metal removal during electropolishing 失效
标题翻译：电解抛光时用于均匀金属去除的电化学工具
公开(公告)号：US5217586A
公开(公告)日：1993-06-08
申请号：US819298
申请日：1992-01-09
申请人： Madhav Datta , Lubomyr T. Romankiw
发明人： Madhav Datta , Lubomyr T. Romankiw
IPC分类号： B23H3/04 , C25F7/00
CPC分类号： C25F7/00
摘要： The present invention relates to an electropolishing tool for the removal of metal from a workpiece, said electropolishing tool comprising a container means for retaining an electrolytic solution, a cathode assembly in the shape of a pyramid the height of which is adjustable, a power supply means including a negative terminal and a positive terminal with said negative terminal being electrically connectable to said cathode assembly, a plate means for holding the workpiece and for forming an electrical connection to the workpiece, said plate means connected to the positive terminal of said power supply means, and an enclosure means placed over the workpiece leaving only the surface of the workpiece which is to be polished exposed to the electrolytic solution such that when the workpiece is secured to said plate means and said cathode assembly is connected to the negative terminal of said power supply means and is placed over the said enclosure means directly facing the workpiece enclosed therein, that portion of the workpiece exposed to the electrolytic solution undergoes electropolishing.
摘要翻译：本发明涉及一种用于从工件去除金属的电抛光工具，所述电抛光工具包括用于保持电解液的容器装置，高度可调的金字塔形状的阴极组件，电源装置包括负端子和正极端子，所述负极端子可电连接到所述阴极组件;板装置，用于保持所述工件并形成与所述工件的电连接，所述板装置连接到所述电源装置的正极端子以及放置在工件上的外壳装置，仅留下要被抛光的工件的表面暴露于电解溶液，使得当工件固定到所述板装置并且所述阴极组件连接到所述电源的负极端子时供给装置并且被放置在直接面向工件的所述外壳装置上在其中暴露于电解液的工件的那部分进行电解抛光。

25. 发明授权

US5152878A Method for electrochemical cleaning of metal residue on molybdenum masks 失效
标题翻译：钼掩模上金属残留物的电化学清洗方法
公开(公告)号：US5152878A
公开(公告)日：1992-10-06
申请号：US806993
申请日：1991-12-31
申请人： Madhav Datta , Karl U. Rocheleau
发明人： Madhav Datta , Karl U. Rocheleau
IPC分类号： C25F1/00
CPC分类号： C25F1/00
摘要： An electrochemical method for selective removal of the metallic residual stain which forms on molybdenum masks during processing of integrated circuits. The method forms an electrolytic cell which has, as its elements, the mask as the anode, an electrolyte of phosphoric acid and glycerol, a cathode, and a power supply. That cell is used to electrochemically clean the mask, forming a surface film and electrolyte layer on the mask which includes the metallic residual stain. To remove the surface film and electrolyte layer and, concurrently, the metallic residual stain, the mask is rinsed with water. It is then dried.
摘要翻译：用于选择性去除在集成电路处理过程中在钼掩模上形成的金属残留污染物的电化学方法。该方法形成作为其元件的作为阳极的掩模，磷酸和甘油的电解质，阴极和电源的电解池。该细胞用于电化学清洁掩模，在掩模上形成包括金属残留污渍的表面膜和电解质层。为了去除表面膜和电解质层，同时，金属残留污渍，用水冲洗面罩。然后干燥。

26. 发明申请

US20100032143A1 MICROHEAT EXCHANGER FOR LASER DIODE COOLING 有权
标题翻译：用于激光二极管冷却的MICROHEAT交换器
公开(公告)号：US20100032143A1
公开(公告)日：2010-02-11
申请号：US12536361
申请日：2009-08-05
申请人： Madhav Datta , Brandon Leong , Mark McMaster
发明人： Madhav Datta , Brandon Leong , Mark McMaster
IPC分类号： F28D15/00 , F28F7/00
CPC分类号： F28F7/02 , C04B37/026 , C04B2237/12 , C04B2237/122 , C04B2237/124 , C04B2237/125 , C04B2237/127 , C04B2237/34 , C04B2237/343 , C04B2237/366 , C04B2237/40 , C04B2237/403 , C04B2237/405 , C04B2237/407 , C04B2237/408 , C04B2237/592 , C04B2237/62 , C04B2237/704 , C04B2237/706 , C04B2237/708 , C04B2237/72 , C04B2237/74 , H01L23/3735 , H01L2924/0002 , H05K1/0203 , H05K1/0207 , H05K1/0272 , H05K1/0306 , H05K3/0061 , H05K3/38 , H05K3/4629 , H05K3/4641 , H05K2201/0355 , H05K2201/064 , Y10T428/24612 , Y10T428/31678 , H01L2924/00
摘要： A microheat exchanging assembly is configured to cool one or more heat generating devices, such as integrated circuits or laser diodes. The microheat exchanging assembly includes a first ceramic assembly thermally coupled to a first surface, and in cases, a second ceramic assembly thermally coupled to a second surface. The ceramic assembly includes one or more electrically and thermally conductive pads to be thermally coupled to a heat generating device, each conductive pad is electrically isolated from each other. The ceramic assembly includes a ceramic layer to provide this electrical isolation. A top surface and a bottom surface of the ceramic layer are each bonded to a conductive layer, such as copper, using an intermediate joining material. A brazing process is performed to bond the ceramic layer to the conductive layer via a joining layer. The joining layer is a composite of the joining material, the ceramic layer, and the conductive layer.
摘要翻译：微型交换组件被配置为冷却一个或多个发热装置，例如集成电路或激光二极管。微型交换组件包括热耦合到第一表面的第一陶瓷组件，以及在与第二表面热耦合的第二陶瓷组件的情况下。陶瓷组件包括一个或多个热导热焊盘，其被热耦合到发热器件，每个导电焊盘彼此电隔离。陶瓷组件包括提供该电隔离的陶瓷层。使用中间接合材料，陶瓷层的顶表面和底表面各自与导电层（例如铜）接合。执行钎焊工艺以通过接合层将陶瓷层粘合到导电层。接合层是接合材料，陶瓷层和导电层的复合物。

27. 发明申请

US20080210405A1 Fabrication of high surface to volume ratio structures and their integration in microheat exchangers for liquid cooling systems 有权
标题翻译：制造高表面与体积比的结构及其集成在液体冷却系统的微型换热器中
公开(公告)号：US20080210405A1
公开(公告)日：2008-09-04
申请号：US11326690
申请日：2006-01-06
申请人： Madhav Datta , Mark McMaster , Rick Brewer , Peng Zhou , Paul Tsao , Girish Upadhaya , Mark Munch
发明人： Madhav Datta , Mark McMaster , Rick Brewer , Peng Zhou , Paul Tsao , Girish Upadhaya , Mark Munch
IPC分类号： F28F27/02 , B21D53/02
CPC分类号： F04B17/00 , F04B19/006 , F28D15/0266 , F28F3/12 , F28F13/185 , F28F2245/04 , H01L21/4882 , H01L23/473 , H01L2924/0002 , Y10T29/4935 , Y10T29/49353 , Y10T29/49366 , Y10T29/49369 , H01L2924/00
摘要： An structure and method of manufacturing a microstructure for use in a heat exchanger is disclosed. The heat exchanger comprises a manifold layer and an microstructured region. The manifold layer comprises a structure to deliver fluid to the microstructured region. The microstructured region is formed from multiple windowed layers formed from heat conductive layers through which a plurality of microscaled apertures have been formed by a wet etching process. The plurality of windowed layers are then coupled together to form a composite microstructure.
摘要翻译：公开了一种制造用于热交换器的微结构的结构和方法。热交换器包括歧管层和微结构区域。歧管层包括将流体输送到微结构化区域的结构。微结构区域由多个由热导层形成的窗口层形成，多个微孔通过该导热层通过湿蚀刻工艺形成。然后将多个窗口层耦合在一起以形成复合微结构。

28. 发明授权

US06853076B2 Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same 有权
标题翻译：含铜C4球限制冶金堆，提高包装结构的可靠性及其制造方法
公开(公告)号：US06853076B2
公开(公告)日：2005-02-08
申请号：US09961034
申请日：2001-09-21
申请人： Madhav Datta , Dave Emory , Subhash M. Joshi , Susanne Menezes , Doowon Suh
发明人： Madhav Datta , Dave Emory , Subhash M. Joshi , Susanne Menezes , Doowon Suh
IPC分类号： H01L21/60 , H01L23/485 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/11 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05572 , H01L2224/05647 , H01L2224/10126 , H01L2224/11009 , H01L2224/1147 , H01L2224/1148 , H01L2224/11849 , H01L2224/11901 , H01L2224/11912 , H01L2224/13023 , H01L2224/13099 , H01L2224/13111 , H01L2224/13116 , H01L2224/13147 , H01L2224/13166 , H01L2924/0002 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2224/05552
摘要： The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.
摘要翻译：本发明涉及一种用于电气装置的极限极限冶金堆，其包含设置在Ti粘附金属层上的至少一个铜层。限流冶金叠层可阻止Sn向器件的上部金属化迁移。

29. 发明授权

US06750133B2 Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps 有权
标题翻译：用于制造电镀锡凸块的选择性极限极限冶金蚀刻工艺
公开(公告)号：US06750133B2
公开(公告)日：2004-06-15
申请号：US10279478
申请日：2002-10-24
申请人： Madhav Datta
发明人： Madhav Datta
IPC分类号： H01L2144
CPC分类号： H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05572 , H01L2224/05647 , H01L2224/1147 , H01L2224/11901 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01021 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2224/05552
摘要： A ball-limiting metallurgy stack is disclosed for an electrical device that contains at least one copper layer disposed upon a titanium adhesion metal layer. The ball-limiting metallurgy stack resists tin migration toward the upper metallization of the device. An etch process flow is also disclosed which resists the redepostion of the tin during etching of a copper layer.
摘要翻译：公开了一种用于电气装置的极限极限冶金堆叠，其包含设置在钛粘合金属层上的至少一个铜层。限流冶金叠层抵抗锡朝向装置的上金属化迁移。还公开了蚀刻工艺流程，其在铜层的蚀刻期间抵抗锡的再次蚀刻。

30. 发明授权

US06228246B1 Removal of metal skin from a copper-Invar-copper laminate 失效
标题翻译：从铜Inv铜层压板去除金属表皮
公开(公告)号：US06228246B1
公开(公告)日：2001-05-08
申请号：US09347581
申请日：1999-07-01
申请人： Madhav Datta , Raymond T. Galasco , Lawrence P. Lehman , Roy H. Magnuson , Robin A. Susko , Robert D. Topa
发明人： Madhav Datta , Raymond T. Galasco , Lawrence P. Lehman , Roy H. Magnuson , Robin A. Susko , Robert D. Topa
IPC分类号： C25F300
CPC分类号： H05K3/44 , C25F3/00 , H05K3/07 , H05K2201/0338 , H05K2201/0347 , H05K2203/0285 , H05K2203/0361
摘要： A method of removing a metal skin from a through-hole surface of a copper-Invar-copper (CIC) laminate without causing differential etchback of the laminate. The metal skin includes debris deposited on the through-hole surface as the through hole is being formed by laser or mechanical drilling of a substrate that includes the laminate as an inner plane. Removing the metal skin combines electrochemical polishing (ECP) with ultrasonics. ECP dissolves the metal skin in an acid solution, while ultrasonics agitates and circulates the acid solution to sweep the metal skin out of the through hole. ECP is activated when a pulse power supply is turned on and generates a periodic voltage pulse from a pulse power supply whose positive terminal is coupled to the laminate and whose negative terminal is coupled to a conductive cathode. After the metal skin is removed, the laminate is differentially etched such that the copper is etched at a faster rate than the Invar. To prevent the differential etching, a copper layer is formed on a surface of the substrate with an electrical resistance R1 between the copper layer and the positive terminal of the pulse power supply. Additionally, an electrical resistance R2 is formed between the laminate and the positive terminal of the pulse power supply. Adjustment of R1 and R2 controls the relative etch rates of the copper and the Invar.
摘要翻译：从铜 - 堇青铜（CIC）层压板的通孔表面去除金属表皮而不会引起层压板的不均匀回蚀的方法。金属皮肤包括沉积在通孔表面上的碎屑，因为通孔是通过激光或机械钻孔形成的，所述基底包括层压体作为内平面。去除金属皮肤结合电化学抛光（ECP）与超声波。 ECP将金属皮肤溶解在酸性溶液中，同时超声波搅拌并循环酸溶液以将金属皮肤从通孔中扫出。当脉冲电源接通时，ECP被激活，并从脉冲电源产生周期性的电压脉冲，该脉冲电源的正极端子耦合到层压板并且其负极端子连接到导电阴极。在去除金属表皮之后，层压体被差异蚀刻，使得以比Invar更快的速度蚀刻铜。为了防止差分蚀刻，在衬底的表面上在铜层和脉冲电源的正端之间具有电阻R1形成铜层。此外，在层压体和脉冲电源的正极端之间形成电阻R2。 R1和R2的调整控制铜和殷钢的相对蚀刻速率。

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