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    • 3. 发明授权
    • Selective chemical etching in microelectronics fabrication
    • 微电子制造中的选择性化学蚀刻
    • US5800726A
    • 1998-09-01
    • US507098
    • 1995-07-26
    • John Michael CotteMadhav DattaThomas Edward DinanRavindra Vaman Shenoy
    • John Michael CotteMadhav DattaThomas Edward DinanRavindra Vaman Shenoy
    • C23F1/30H01L21/3213C23G1/14
    • H01L21/32134C23F1/30
    • The present invention relates to a chemical etchant for etching metals in the presence of one or more metals not to be etched, the etchant comprising 10-25 gms EDTA, 15-35 gms K.sub.2 HPO.sub.4 and 25-45 gms oxalic acid in a liter of 30% H.sub.2 O.sub.2. More particularly, in the fabrication of interconnections for microchip structures, the present invention addresses the removal of intermediate adherent layers, e.g., Ti--W, without damaging other microchip structures made of other metals, such as Al or Al--Cu test pads; Cu and phased Cr--Cu layers; and Sn--Pb solder bumps. The use of potassium phosphate in the hydrogen peroxide+EDTA bath has been found to significantly reduce the attack on the metal not to be etched. Furthermore, the use of oxalic acid in the bath prevented the deposition of tin oxide on the substrate adherent layer metal, thus facilitating its complete removal.
    • 本发明涉及用于在一种或多种不被蚀刻的金属存在下蚀刻金属的化学蚀刻剂,该蚀刻剂包括10-25克EDTA,15-35克K 2 HPO 4和25-45克草酸,每升30升 %H2O2。 更具体地说,在制造用于微芯片结构的互连时,本发明解决了诸如Ti-W之类的中间粘附层的去除,而不损害由其它金属例如Al或Al-Cu测试焊盘制成的其它微芯片结构; Cu和相Cr-Cu层; 和Sn-Pb焊锡凸块。 已经发现在过氧化氢+ EDTA浴中使用磷酸钾可显着减少对不被蚀刻的金属的侵蚀。 此外,在浴中使用草酸防止氧化锡沉积在基底粘附层金属上,从而有助于其完全去除。