会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 27. 发明授权
    • Electron beam inspection method and apparatus and semiconductor
manufacturing method and its manufacturing line utilizing the same
    • 电子束检查方法及装置及半导体制造方法及其制造线
    • US5986263A
    • 1999-11-16
    • US824413
    • 1997-03-26
    • Takashi HiroiMaki TanakaMasahiro WatanabeAsahiro KuniYukio MatsuyamaYuji TakagiHiroyuki ShinadaMari NozoeAritoshi Sugimoto
    • Takashi HiroiMaki TanakaMasahiro WatanabeAsahiro KuniYukio MatsuyamaYuji TakagiHiroyuki ShinadaMari NozoeAritoshi Sugimoto
    • G01Q20/00G01Q30/04G01Q30/02G01Q60/00H01J37/20H01J37/22H01J37/256H01J37/28H01L21/66
    • H01J37/28H01J2237/2817
    • An electron beam inspection method and apparatus. The method includes controlling acceleration voltage of electron beam and electric field on a sample, beam current, beam diameter, image detection rate, image dimensions, precharge, discharge, or a combination of them, exposing an object to the electron beam, detecting in a sensor a physical change generated from the object, and inspecting or measuring the object on the basis of a signal representing the detected physical change. The apparatus includes an electron source (potential E2) for generating an electron beam, a deflector for scanning generated electrons, an objective lens for focusing the electron beam upon the object, a grid (potential E1) disposed between the object and the objective lens, a wafer holder (potential E0) for holding the object, a sensor for detecting generated secondary electrons, a potential controller for controlling the potential E0, E1 and E2, and a storage for storing optimum potential conditions. By changing conditions of an electron optic system such as potential E0, E1 and E2, the acceleration voltage and electric field on the object are controlled. For a material located at least in an upper layer of a plurality of materials forming the object, the secondary electron yield ratio can be made nearly unity and appropriate contrast of an obtained image can be provided with minimized influence of charge up.
    • 电子束检查方法和装置。 该方法包括控制电子束的加速电压和样品上的电场,束电流,光束直径,图像检测率,图像尺寸,预充电,放电或它们的组合,将物体暴露于电子束,在 传感器从物体产生的物理变化,以及根据表示检测到的物理变化的信号检查或测量物体。 该装置包括用于产生电子束的电子源(电位E2),用于扫描产生的电子的偏转器,用于将电子束聚焦在物体上的物镜,设置在物体和物镜之间的格栅(电位E1) 用于保持物体的晶片保持器(电位E0),用于检测产生的二次电子的传感器,用于控制电位E0,E1和E2的电位控制器,以及用于存储最佳电位条件的存储器。 通过改变诸如电位E0,E1和E2的电子光学系统的状态,控制对象上的加速电压和电场。 对于至少位于形成物体的多种材料的上层中的材料,二次电子屈服比可以几乎一致,并且可以以最小化的充电影响来提供所获得的图像的适当的对比度。