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21. 发明授权

US07745333B2 Methods for depositing tungsten layers employing atomic layer deposition techniques 有权
标题翻译：使用原子层沉积技术沉积钨层的方法
公开(公告)号：US07745333B2
公开(公告)日：2010-06-29
申请号：US12179002
申请日：2008-07-24
申请人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Avgerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
发明人： Ken Kaung Lai , Ravi Rajagopalan , Amit Khandelwal , Madhu Moorthy , Srinivas Gandikota , Joseph Castro , Avgerinos V. Gelatos , Cheryl Knepfler , Ping Jian , Hongbin Fang , Chao-Ming Huang , Ming Xi , Michael X. Yang , Hua Chung , Jeong Soo Byun
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositing a nucleation layer on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the nucleation layer to a second soak process for a second time period and depositing a bulk layer on the nucleation layer. In one example, the barrier layer contains titanium nitride, the first and second soak processes independently comprise at least one reducing gas selected from the group consisting of hydrogen, silane, disilane, dichlorosilane, borane, diborane, derivatives thereof and combinations thereof and the nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process while the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在本发明的一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含设置在其上的阻挡层的衬底定位在处理室中，将衬底暴露于第一次浸泡过程第一时间段以及通过使含钨前体和还原剂流入所述处理室，在所述阻挡层上沉积成核层。该方法还包括将成核层暴露于第二次浸泡过程第二时间段，并将沉积层沉积在成核层上。在一个实例中，阻挡层包含氮化钛，第一和第二浸泡工艺独立地包含选自氢，硅烷，乙硅烷，二氯硅烷，硼烷，乙硼烷，其衍生物及其组合中的至少一种还原气体和成核层可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积，同时可以通过化学气相沉积工艺或物理气相沉积工艺沉积主体层。

22. 发明授权

US07660644B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US07660644B2
公开(公告)日：2010-02-09
申请号：US11423535
申请日：2006-06-12
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

23. 发明授权

US07605083B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07605083B2
公开(公告)日：2009-10-20
申请号：US12128499
申请日：2008-05-28
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
摘要翻译：本发明的实施例提供了沉积钨材料的方法。在一个实施例中，提供了一种用于形成复合钨膜的方法，其包括将衬底定位在处理室内，通过在循环中随后将衬底暴露于钨前体和含氢的还原气体，在衬底上形成钨成核层沉积工艺，以及在等离子体增强化学气相沉积（PE-CVD）工艺期间形成钨体层。 PE-CVD工艺包括将衬底暴露于含有钨前体的沉积气体，同时在钨成核层上沉积钨体层。在一些实例中，钨成核层的厚度小于约，例如约为15。在其他实例中，在循环沉积过程中，含有氢气的载气不断地流入处理室。

24. 发明授权

US07465666B2 Method for forming tungsten materials during vapor deposition processes 有权
标题翻译：在气相沉积工艺中形成钨材料的方法
公开(公告)号：US07465666B2
公开(公告)日：2008-12-16
申请号：US11766121
申请日：2007-06-21
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

25. 发明授权

US07238552B2 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics 有权
标题翻译：用于在表面处理后沉积钨以提高膜特性的方法和装置
公开(公告)号：US07238552B2
公开(公告)日：2007-07-03
申请号：US11130515
申请日：2005-05-17
申请人： Jeong Soo Byun
发明人： Jeong Soo Byun
IPC分类号： H01L21/82
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/14 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of the tungsten layer while improving the step coverage and resistivity of the tungsten layer. It is believed that the improved characteristics of the tungsten film are attributable to the chemical affinity between the reductants and the tungsten containing compound. The chemical affinity provides better surface mobility of the adsorbed chemical species and better reduction of WF6 at the nucleation stage of the tungsten layer. The method can further include sequentially introducing a reductant, such as PH3 or B2H6, and a tungsten containing compound to deposit a tungsten layer. The formed tungsten layer can be used as a nucleation layer followed by bulk deposition of a tungsten layer utilizing standard CVD techniques. Alternatively, the formed tungsten layer can be used to fill an aperture.
摘要翻译：在衬底上形成难熔金属层的方法和系统包括引入还原剂，例如PH 3或B 2 H 6 C 6，然后引入含钨化合物，例如WF 6 N，以形成钨层。据信，还原剂降低了钨层的氟含量，同时改善了钨层的阶梯覆盖和电阻率。据信，钨膜的改进的特性可归因于还原剂和含钨化合物之间的化学亲和力。化学亲合力提供吸附的化学物质的更好的表面迁移率，并且在钨层的成核阶段更好地还原WF 6。该方法可以进一步包括依次引入还原剂，例如PH 3或B 2 H 6，以及含钨化合物以沉积钨层。形成的钨层可以用作成核层，随后使用标准CVD技术大量沉积钨层。或者，形成的钨层可用于填充孔。

26. 发明授权

US07235486B2 Method for forming tungsten materials during vapor deposition processes 有权
标题翻译：在气相沉积工艺中形成钨材料的方法
公开(公告)号：US07235486B2
公开(公告)日：2007-06-26
申请号：US11468156
申请日：2006-08-29
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热至沉积温度，并将衬底依次暴露于第一还原气体和钨前体气体以在原子层沉积（ALD）工艺期间在衬底上形成钨成核层。该方法可以进一步提供将衬底暴露于包含第二还原气体和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。实例包括ALD和CVD工艺在相同的沉积室或不同的沉积室中进行。

27. 发明授权

US07049211B2 In-situ-etch-assisted HDP deposition using SiF4 失效
标题翻译：使用SiF4进行原位蚀刻辅助HDP沉积
公开(公告)号：US07049211B2
公开(公告)日：2006-05-23
申请号：US11089874
申请日：2005-03-25
申请人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
发明人： M. Ziaul Karim , DongQing Li , Jeong Soo Byun , Thanh N. Pham
IPC分类号： H01L21/44 , H01L21/28 , H01L21/469 , H01L21/31
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components.
摘要翻译：提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。包括SiF 4 N，流动气体，硅源和氧化性气体反应物的工艺气体流入处理室。从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。

28. 发明授权

US06551929B1 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques 有权
$Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques$
标题翻译：使用原子层沉积和化学气相沉积技术沉积难熔金属层的分叉沉积工艺
公开(公告)号：US06551929B1
公开(公告)日：2003-04-22
申请号：US09605593
申请日：2000-06-28
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L2144
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.
摘要翻译：在衬底上形成难熔金属层的方法和系统具有分叉沉积工艺，其包括使用ALD技术使衬底成核，以将衬底串行地暴露于第一和第二反应气体，然后使用邻近成核层的本体层，使用同时将成核层暴露于第一和第二气体的CVD技术。

29. 发明授权

US5668040A Method for forming a semiconductor device electrode which also serves as a diffusion barrier 失效
标题翻译：形成也用作扩散阻挡层的半导体器件电极的方法
公开(公告)号：US5668040A
公开(公告)日：1997-09-16
申请号：US601621
申请日：1996-02-14
申请人： Jeong Soo Byun
发明人： Jeong Soo Byun
IPC分类号： H01L21/02 , H01L21/283
CPC分类号： H01L28/60 , H01L28/55
摘要： A capacitor element includes a pervoskite dielectric film and an electrode having excellent electrical contact characteristic and improved adhesion to an underlying surface. In a method for fabricating the electrode, a group IVB or VB refractory metal transition element is deposited on a silicon substrate or a silicon oxide layer. A group VIII near noble metal transition element is then deposited on the group IVB or VB refractory metal layer. The substrate and deposited layers is then subjected to a heat treatment in an ammonia ambient to form a refractory metal nitride layer between the refractory metal and near noble metal layers. In addition, if the refractory metal is deposited on a silicon substrate, a silicide layer is formed between the refractory metal layer and the substrate during heat treatment. If, however, the refractory metal layer is provided on a silicon oxide layer, a refractory metal oxide is formed during the heat treatment. Examples of group IVB refractory metal transition elements include Ti, Zr and Hf; examples of group VIII refractory metal transition elements include Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, and Pt; and examples of the group VB refractory metals include V, Nb, and Ta.
摘要翻译：电容器元件包括透明电介质膜和具有优异的电接触特性和改善对下表面的粘附性的电极。在制造电极的方法中，IVB或VB族难熔金属过渡元素沉积在硅衬底或氧化硅层上。然后将贵金属过渡元素附近的VIII族沉积在IVB或VB族难熔金属层上。然后将基底和沉积层在氨环境中进行热处理，以在难熔金属和近贵金属层之间形成难熔金属氮化物层。此外，如果难熔金属沉积在硅衬底上，则在热处理期间在难熔金属层和衬底之间形成硅化物层。然而，如果难熔金属层设置在氧化硅层上，则在热处理期间形成难熔金属氧化物。 IVB族难熔金属过渡元素的实例包括Ti，Zr和Hf; 第VIII族难熔金属过渡元素的实例包括Fe，Co，Ni，Ru，Rh，Pd，Os，Ir和Pt; VB族难熔金属的实例包括V，Nb和Ta。

30. 发明授权

US08691648B1 Methods for fabricating semiconductor memory with process induced strain 有权
标题翻译：用工艺诱导应变制造半导体存储器的方法
公开(公告)号：US08691648B1
公开(公告)日：2014-04-08
申请号：US13168711
申请日：2011-06-24
申请人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar , Jeong Soo Byun
发明人： Igor Polishchuk , Sagy Levy , Krishnaswamy Ramkumar , Jeong Soo Byun
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L29/66833 , H01L29/792
摘要： Non-volatile semiconductor memories and methods of fabricating the same to improve performance thereof are provided. In one embodiment, the method includes: (i) forming a gate for a non-volatile memory transistor on a surface of a substrate overlaying a channel region formed therein, the gate including a charge trapping layer; and (ii) forming a strain inducing structure over the gate of the non-volatile memory transistor to increase charge retention of the charge trapping layer. Preferably, the memory transistor is a silicon-oxide-nitride-oxide-silicon (SONOS) transistor comprising a SONOS gate stack. More preferably, the memory also includes a logic transistor on the substrate, and the step of forming a strain inducing structure comprises the step of forming the strain inducing structure over the logic transistor. Other embodiments are also disclosed.
摘要翻译：提供非易失性半导体存储器及其制造方法以改善其性能。在一个实施例中，该方法包括：（i）在覆盖其中形成的沟道区的衬底的表面上形成用于非易失性存储晶体管的栅极，栅极包括电荷俘获层; 和（ii）在非易失性存储晶体管的栅极上形成应变诱导结构，以增加电荷俘获层的电荷保留。优选地，存储晶体管是包括SONOS栅极堆叠的氧化硅 - 氧化物 - 氮化物 - 氧化物 - 硅（SONOS）晶体管。更优选地，存储器还包括在衬底上的逻辑晶体管，并且形成应变诱导结构的步骤包括在逻辑晶体管上形成应变诱导结构的步骤。还公开了其他实施例。

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