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21. 发明申请

US20080160204A1 Spontaneous copper seed deposition process for metal interconnects 审中-公开
标题翻译：金属互连的自发铜种子沉积工艺
公开(公告)号：US20080160204A1
公开(公告)日：2008-07-03
申请号：US11648006
申请日：2006-12-28
申请人： Adrien R. Lavoie , James M. Blackwell , Darryl J. Morrison , Manish Sharma
发明人： Adrien R. Lavoie , James M. Blackwell , Darryl J. Morrison , Manish Sharma
IPC分类号： B05D1/18 , B05C3/00
CPC分类号： H01L21/288 , C23C18/38 , C23C18/40 , C25D3/38 , H01L21/76873 , H01L21/76874
摘要： A method for depositing a copper seed layer onto a semiconductor substrate comprises applying a SCuD plating bath onto a surface of a substrate, rinsing the surface with an organic solvent, applying a co-reactant bath to the surface, and again rinsing the surface with an organic solvent. The SCuD plating bath is non-aqueous and comprises a copper precursor that is dissolved into an organic solvent. The co-reactant bath is also non-aqueous and comprises a co-reactant dissolved into an organic solvent. The SCuD plating bath may be heated before being applied to the substrate surface.
摘要翻译：一种将铜籽晶层沉积在半导体衬底上的方法包括将SCuD电镀浴施加到衬底的表面上，用有机溶剂冲洗表面，向表面施加共反应物浴，再次用有机溶剂。 SCUD电镀浴是非水性的并且包含溶解在有机溶剂中的铜前体。共反应物浴也是非水的并且包含溶解在有机溶剂中的共反应物。可以在施加到基板表面之前加热SCUD电镀浴。

22. 发明授权

US07394840B2 Virtual optical axis determination using machine vision for passive optical alignment 失效
标题翻译：虚拟光轴确定使用机器视觉进行无源光学对准
公开(公告)号：US07394840B2
公开(公告)日：2008-07-01
申请号：US11171899
申请日：2005-06-30
申请人： Manish Sharma , Sergei Sochava , Eric Montei
发明人： Manish Sharma , Sergei Sochava , Eric Montei
IPC分类号： H01S3/13 , H01S3/08
CPC分类号： H01S5/141 , G02B7/003 , G02B27/62 , H01S5/02248 , H01S5/02284 , H01S5/024 , H01S5/02415 , H01S5/02492 , H01S5/0617
摘要： Alignment of a laser apparatus is achieved by actively aligning components of the laser apparatus and then passively deriving an optical axis from that alignment. This passive derivation can be achieved by identifying features of an actively aligned optical element, deriving positional data for those features, and developing an optical axis from that positional data. The derivation of positional data may be performed over a particular coordinate system of an image taken of the feature, e.g., obtained by a vision system. The positional data and optical axis may be extrapolated out to a reference coordinate system for use in passively aligning other optical elements.
摘要翻译：通过主动对准激光装置的部件，然后被动地从该对准中导出光轴来实现激光装置的对准。可以通过识别主动对准的光学元件的特征，导出那些特征的位置数据，以及从该位置数据展开光轴来实现该被动导出。位置数据的推导可以在特征的特定坐标系上执行，例如由视觉系统获得的特征的图像。位置数据和光轴可以外推到参考坐标系，用于被动对准其它光学元件。

23. 发明授权

US07267997B1 Process for forming magnetic memory structures 有权
标题翻译：用于形成磁记忆体结构的方法
公开(公告)号：US07267997B1
公开(公告)日：2007-09-11
申请号：US11118828
申请日：2005-04-29
申请人： Manish Sharma , Lung Tran
发明人： Manish Sharma , Lung Tran
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y25/00 , H01F10/3254 , H01F10/3281 , H01F41/32
摘要： An exemplary method for making a memory structure comprises forming a first ferromagnetic layer, forming a spacer layer above the first ferromagnetic layer, forming a second ferromagnetic layer above the spacer layer by applying a first deposition process to form a thin layer of ferromagnetic material substantially covering the spacer layer, the first layer being formed at a first energy level, and applying a second deposition process to form the remainder of the second ferromagnetic layer above the thin layer of ferromagnetic material, the second ferromagnetic layer being formed at a second energy level, higher than the first energy level. This way, the spacer layer is protected by the thin layer during the second energy level deposition.
摘要翻译：用于制造存储器结构的示例性方法包括形成第一铁磁层，在第一铁磁层之上形成间隔层，通过施加第一沉积工艺形成基本覆盖的铁磁材料的薄层，在间隔层上方形成第二铁磁层所述间隔层，所述第一层以第一能级形成，并且施加第二沉积工艺以在所述铁磁材料的薄层之上形成所述第二铁磁层的其余部分，所述第二铁磁层形成在第二能级，高于第一能级。这样，间隔层在第二能级沉积期间被薄层保护。

24. 发明申请

US20070115718A1 Multi-layered magnetic memory structures 有权
标题翻译：多层磁记忆体结构
公开(公告)号：US20070115718A1
公开(公告)日：2007-05-24
申请号：US11285991
申请日：2005-11-23
申请人： Manish Sharma , Lung Tran , Thomas Anthony
发明人： Manish Sharma , Lung Tran , Thomas Anthony
IPC分类号： G11C11/14
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
摘要翻译：包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。

25. 发明授权

US07186571B2 Method of fabricating a compositionally modulated electrode in a magnetic tunnel junction device 有权
标题翻译：在磁性隧道结装置中制造组成调制电极的方法
公开(公告)号：US07186571B2
公开(公告)日：2007-03-06
申请号：US10769107
申请日：2004-01-30
申请人： Heon Lee , Manish Sharma
发明人： Heon Lee , Manish Sharma
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： A magnetic tunnel junction device with a compositionally modulated electrode and a method of fabricating a magnetic tunnel junction device with a compositionally modulated electrode are disclosed. An electrode in electrical communication with a data layer of the magnetic tunnel junction device includes a high resistivity region that has a higher resistivity than the electrode. As a result, a current flowing through the electrode generates joule heating in the high resistivity region and that joule heating increases a temperature of the data layer and reduces a coercivity of the data layer. Consequently, a magnitude of a switching field required to rotate an alterable orientation of magnetization of the data layer is reduced. The high resistivity region can be fabricated using a plasma oxidation, a plasma nitridation, a plasma carburization, or an alloying process.
摘要翻译：公开了一种具有组成调制电极的磁性隧道结器件和一种制造具有组成调制电极的磁性隧道结器件的方法。与磁性隧道结装置的数据层电连通的电极包括具有比电极更高的电阻率的高电阻率区域。结果，流过电极的电流在高电阻率区域产生焦耳加热，并且焦耳加热增加数据层的温度并降低数据层的矫顽力。因此，减小了旋转数据层的磁化方向的可变方向所需的切换场的大小。高电阻率区域可以使用等离子体氧化，等离子体氮化，等离子体渗碳或合金化工艺来制造。

26. 发明申请

US20060092139A1 Pressure-sensitive input device for data processing systems 有权
标题翻译：用于数据处理系统的压敏输入设备
公开(公告)号：US20060092139A1
公开(公告)日：2006-05-04
申请号：US10978878
申请日：2004-11-01
申请人： Manish Sharma
发明人： Manish Sharma
IPC分类号： G09G5/00
CPC分类号： G06F3/0412 , G06F3/045 , G06F2203/04104 , G06F2203/04809
摘要： Provided is a pressure sensitive input device for data processing systems. In a particular embodiment, the device includes a transferable overlay for placement over a display screen of the system. Rows and columns of parallel conductors, which may be manufactured as ridges, are positioned to cross within the overlay, and are separated by a deformable isolation layer. A current is flowed across the rows and columns. Any change in the distance between the rows and columns, induced by the pressure of a user input, produces a disruption in the current flow. A proportional analog response signal is transmitted to a processor, wherein the signal is used to calculate a location of the user input, and a differential in the input pressure. The device may receive and process multiple, simultaneous inputs at various locations on the overlay. An appropriate method of use for the pressure-sensitive input device is also provided.
摘要翻译：提供了一种用于数据处理系统的压敏输入装置。在特定实施例中，设备包括用于放置在系统的显示屏幕上的可转移覆盖层。可以制造为脊的平行导体的行和列被定位成在覆盖层内交叉，并且由可变形隔离层分开。电流流过行和列。由用户输入的压力引起的行和列之间的距离的任何变化导致当前流程的中断。比例模拟响应信号被发送到处理器，其中该信号用于计算用户输入的位置和输入压力的差。设备可以在覆盖层上的各个位置接收和处理多个同时输入。还提供了适用于压敏输入装置的方法。

27. 发明申请

US20060072944A1 Printed circuit board printing system and method 有权
公开(公告)号：US20060072944A1
公开(公告)日：2006-04-06
申请号：US10958007
申请日：2004-10-04
申请人： Manish Sharma , Lung Tran
发明人： Manish Sharma , Lung Tran
IPC分类号： G03G15/16
CPC分类号： H04L45/00 , G03G15/10 , G03G15/224 , G03G15/225 , G03G15/6585 , H04L45/24 , H04L45/245 , H04L45/60 , H05K3/1266 , H05K3/207 , H05K2201/0257 , H05K2203/0126 , H05K2203/0517 , Y02D50/30
摘要： The invention provides a printed circuit board (PCB) printing system. In a particular embodiment, the system includes a liquid electrophotographic printing device. At least one supplier of electrically conductive ink supplying electrically conductive ink to the electrophotographic printing device is also provided. In addition, at least one supplier of dielectric ink supplying dielectric ink to the electrophotographic printing device is also provided. The liquid electrophotographic printing device is operable to apply the electrically conductive ink and the dielectric ink to a provided substrate such that substantially immiscible boundary delineation occurs at any points of contact between the applied electrically conducive ink and the applied dielectric ink. An appropriate method of use for the rendering of a printed circuit board is also provided.

28. 发明申请

US20060066338A1 Fault dictionaries for integrated circuit yield and quality analysis methods and systems 有权
标题翻译：集成电路产品和质量分析方法和系统的故障字典
公开(公告)号：US20060066338A1
公开(公告)日：2006-03-30
申请号：US11221394
申请日：2005-09-06
申请人： Janusz Rajski , Gang Chen , Martin Keim , Nagesh Tamarapalli , Manish Sharma , Huaxing Tang
发明人： Janusz Rajski , Gang Chen , Martin Keim , Nagesh Tamarapalli , Manish Sharma , Huaxing Tang
IPC分类号： G01R31/26
CPC分类号： G06F11/2273 , G01R31/01 , G01R31/2846 , G01R31/2853 , G01R31/2894 , G01R31/31704 , G01R31/31835
摘要： Methods, apparatus, and systems for testing, analyzing, and improving integrated circuit yield and quality are disclosed herein. For example, in one exemplary embodiment, one or more fault dictionaries are generated for identifying one or more defect candidates from corresponding observation point combinations. In this exemplary method, the observation point combinations indicate the observation points of a circuit-under-test that captured faulty test values upon application of a respective test pattern. Further, the one or more fault dictionaries in one embodiment are generated by: (a) for a first defect candidate, storing one or more first indicators indicative of test patterns detecting the first defect candidate, and (b) for a second defect candidate, storing at least a second indicator indicative of the test patterns that detect the second defect candidate, the second indicator comprising a bit mask that indicates which of the test patterns detecting the first defect candidate also detect the second defect candidate.
摘要翻译：本文公开了用于测试，分析和提高集成电路产量和质量的方法，装置和系统。例如，在一个示例性实施例中，生成用于从相应的观察点组合识别一个或多个缺陷候选的一个或多个故障字典。在该示例性方法中，观察点组合表示在应用相应测试图案时捕获故障测试值的被测电路的观察点。此外，一个实施例中的一个或多个故障字典通过以下方式产生：（a）对于第一缺陷候选，存储指示检测第一缺陷候选的测试图案的一个或多个第一指示符，以及（b）对于第二缺陷候选，存储指示检测第二缺陷候选的测试图案的至少第二指示符，第二指示符包括指示检测第一缺陷候选的哪个测试图案还检测第二缺陷候选的位掩码。

29. 发明授权

US07009903B2 Sense amplifying magnetic tunnel device 有权
标题翻译：感应放大磁隧道装置
公开(公告)号：US07009903B2
公开(公告)日：2006-03-07
申请号：US10855042
申请日：2004-05-27
申请人： Fredrick A. Perner , Manish Sharma
发明人： Fredrick A. Perner , Manish Sharma
IPC分类号： G11C7/02
CPC分类号： G11C11/16
摘要： A sense amplifying magnetic tunnel (SAMT) device is disclosed. In a particular embodiment, a field effect transistor (FET) having a drain, a source, a channel therebetween, a gate electrode and a tunneling gate oxide proximate to the channel is provided. In addition, a spin valve memory (SVM) cell is provided electrically coupled to the gate electrode. The electrical coupling between the SVM cell and the gate electrode serves to provide a control potential to the gate. In addition, the coupling provides a gain to a current passed through the SAMT device.
摘要翻译：公开了一种感测放大磁通（SAMT）装置。在特定实施例中，提供了具有漏极，源极，其间的沟道，靠近沟道的栅电极和隧道栅氧化物的场效应晶体管（FET）。此外，提供电耦合到栅电极的自旋阀存储器（SVM）单元。 SVM单元和栅电极之间的电耦合用于向栅极提供控制电位。此外，耦合为通过SAMT设备的电流提供增益。

30. 发明授权

US06989975B2 Magnetoresistive device including pinned structure with a layer that provides texture for pinning 有权
标题翻译：磁阻器件包括具有提供钉扎纹理的层的钉扎结构
公开(公告)号：US06989975B2
公开(公告)日：2006-01-24
申请号：US10463993
申请日：2003-06-18
申请人： Janice H. Nickel , Manish Sharma
发明人： Janice H. Nickel , Manish Sharma
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01F10/3295 , H01L43/08
摘要： A magnetoresistive device includes a free ferromagnetic layer; a pinned structure; and a spacer layer between the free layer and the pinned structure. The pinned structure may include first, second and third ferromagnetic layers that are ferromagnetically coupled. The first and third layers are separated by the second layer. The second layer has a lower magnetic moment than the first and third layers. In the alternative, the pinned structure may include a single layer of Co50Fe50.
摘要翻译：磁阻器件包括自由铁磁层; 固定结构以及在自由层和钉扎结构之间的间隔层。钉扎结构可以包括铁磁耦合的第一，第二和第三铁磁层。第一和第三层由第二层隔开。第二层具有比第一层和第三层更低的磁矩。在替代方案中，钉扎结构可以包括单层Co 50 N 50 O 50。

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