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1. 发明申请

US20070115718A1 Multi-layered magnetic memory structures 有权
标题翻译：多层磁记忆体结构
公开(公告)号：US20070115718A1
公开(公告)日：2007-05-24
申请号：US11285991
申请日：2005-11-23
申请人： Manish Sharma , Lung Tran , Thomas Anthony
发明人： Manish Sharma , Lung Tran , Thomas Anthony
IPC分类号： G11C11/14
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
摘要翻译：包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。

2. 发明授权

US06649423B2 Method for modifying switching field characteristics of magnetic tunnel junctions 有权
标题翻译：修改磁隧道结开关场特性的方法
公开(公告)号：US06649423B2
公开(公告)日：2003-11-18
申请号：US09971347
申请日：2001-10-04
申请人： Thomas Anthony , Lung Tran , Manish Sharma
发明人： Thomas Anthony , Lung Tran , Manish Sharma
IPC分类号： H01L2100
CPC分类号： G11C11/16 , Y10S257/902
摘要： A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.
摘要翻译：通过形成固定和感应层制造磁性隧道结; 并重新设定至少一层的磁化矢量。

3. 发明授权

US06828610B2 Method for modifying switching field characteristics of magnetic tunnel junctions 有权
标题翻译：修改磁隧道结开关场特性的方法
公开(公告)号：US06828610B2
公开(公告)日：2004-12-07
申请号：US10626447
申请日：2003-07-23
申请人： Thomas Anthony , Lung Tran , Manish Sharma
发明人： Thomas Anthony , Lung Tran , Manish Sharma
IPC分类号： H01L31062
CPC分类号： G11C11/16 , Y10S257/902
摘要： A magnetic tunnel junction is fabricated by forming pinned and sense layers; and re-setting a magnetization vector of at least one of the layers.
摘要翻译：通过形成固定和感应层制造磁性隧道结; 并重新设定至少一层的磁化矢量。

4. 发明授权

US07267997B1 Process for forming magnetic memory structures 有权
标题翻译：用于形成磁记忆体结构的方法
公开(公告)号：US07267997B1
公开(公告)日：2007-09-11
申请号：US11118828
申请日：2005-04-29
申请人： Manish Sharma , Lung Tran
发明人： Manish Sharma , Lung Tran
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y25/00 , H01F10/3254 , H01F10/3281 , H01F41/32
摘要： An exemplary method for making a memory structure comprises forming a first ferromagnetic layer, forming a spacer layer above the first ferromagnetic layer, forming a second ferromagnetic layer above the spacer layer by applying a first deposition process to form a thin layer of ferromagnetic material substantially covering the spacer layer, the first layer being formed at a first energy level, and applying a second deposition process to form the remainder of the second ferromagnetic layer above the thin layer of ferromagnetic material, the second ferromagnetic layer being formed at a second energy level, higher than the first energy level. This way, the spacer layer is protected by the thin layer during the second energy level deposition.
摘要翻译：用于制造存储器结构的示例性方法包括形成第一铁磁层，在第一铁磁层之上形成间隔层，通过施加第一沉积工艺形成基本覆盖的铁磁材料的薄层，在间隔层上方形成第二铁磁层所述间隔层，所述第一层以第一能级形成，并且施加第二沉积工艺以在所述铁磁材料的薄层之上形成所述第二铁磁层的其余部分，所述第二铁磁层形成在第二能级，高于第一能级。这样，间隔层在第二能级沉积期间被薄层保护。

5. 发明申请

US20060072944A1 Printed circuit board printing system and method 有权
公开(公告)号：US20060072944A1
公开(公告)日：2006-04-06
申请号：US10958007
申请日：2004-10-04
申请人： Manish Sharma , Lung Tran
发明人： Manish Sharma , Lung Tran
IPC分类号： G03G15/16
CPC分类号： H04L45/00 , G03G15/10 , G03G15/224 , G03G15/225 , G03G15/6585 , H04L45/24 , H04L45/245 , H04L45/60 , H05K3/1266 , H05K3/207 , H05K2201/0257 , H05K2203/0126 , H05K2203/0517 , Y02D50/30
摘要： The invention provides a printed circuit board (PCB) printing system. In a particular embodiment, the system includes a liquid electrophotographic printing device. At least one supplier of electrically conductive ink supplying electrically conductive ink to the electrophotographic printing device is also provided. In addition, at least one supplier of dielectric ink supplying dielectric ink to the electrophotographic printing device is also provided. The liquid electrophotographic printing device is operable to apply the electrically conductive ink and the dielectric ink to a provided substrate such that substantially immiscible boundary delineation occurs at any points of contact between the applied electrically conducive ink and the applied dielectric ink. An appropriate method of use for the rendering of a printed circuit board is also provided.

6. 发明申请

US20050201173A1 Method of manufacture for improved diode for use in MRAM devices 审中-公开
标题翻译：用于MRAM器件的改进二极管的制造方法
公开(公告)号：US20050201173A1
公开(公告)日：2005-09-15
申请号：US11089687
申请日：2005-03-24
申请人： Manish Sharma , Lung Tran
发明人： Manish Sharma , Lung Tran
IPC分类号： G11C11/00 , G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C7/00
CPC分类号： H01L27/224 , G11C11/00 , G11C11/15 , G11C11/16
摘要： The method for manufacturing a data storage device is disclosed. The device has a plurality of word lines, a plurality of bit lines, and a resistive crosspoint array of memory cells. Each memory cell is connected to a bit line and connected to an isolation diode that further connects to a respective word line. The isolation diode provides a unidirectional conductive path from the bit line to the word line. Each word line provides a common metal-semiconductor contact with each diode sharing the word line such that each diode has a separate metal contact located between the semiconductor portion of the common metal-semiconductor contact and its respective memory cell.
摘要翻译：公开了一种用于制造数据存储装置的方法。该装置具有多个字线，多个位线和存储器单元的电阻交叉点阵列。每个存储单元连接到位线并连接到进一步连接到相应字线的隔离二极管。隔离二极管提供从位线到字线的单向导电路径。每个字线提供与共享字线的每个二极管共同的金属 - 半导体接触，使得每个二极管具有位于公共金属 - 半导体触点的半导体部分和其相应存储单元之间的单独的金属触点。

7. 发明授权

US06903403B2 Magnetic memory cell having an annular data layer and a soft reference layer 有权
公开(公告)号：US06903403B2
公开(公告)日：2005-06-07
申请号：US10902925
申请日：2004-07-30
申请人： Manish Sharma , Lung Tran
发明人： Manish Sharma , Lung Tran
IPC分类号： H01L21/336 , H01L21/8238 , H01L27/108 , H01L27/22 , H01L29/76 , H01L29/94 , H01L43/12
CPC分类号： H01L27/222 , H01L43/12
摘要： An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memory array includes a ferromagnetic annular data layer having an opening, the opening enabling the second conductor to electrically contact the first conductor, an intermediate layer on at least a portion of the annular data layer, and a soft reference layer on at least a portion of the intermediate layer.

8. 发明授权

US06891212B2 Magnetic memory device having soft reference layer 有权
标题翻译：具有软参考层的磁存储器件
公开(公告)号：US06891212B2
公开(公告)日：2005-05-10
申请号：US10697191
申请日：2003-10-30
申请人： Manish Sharma , Thomas C. Anthony , Lung Tran
发明人： Manish Sharma , Thomas C. Anthony , Lung Tran
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L29/76
CPC分类号： G11C11/16
摘要： A magnetic memory device includes first and second ferromagnetic layers. Each ferromagnetic layer has a magnetization that can be oriented in either of two directions. The first ferromagnetic layer has a higher coercivity than the second ferromagnetic layer. The magnetic memory device further includes a structure for forming a closed flux path with the second ferromagnetic layer.
摘要翻译：磁存储器件包括第一和第二铁磁层。每个铁磁层具有可以在两个方向中的任一方向上取向的磁化。第一铁磁层具有比第二铁磁层更高的矫顽力。磁存储器件还包括用于与第二铁磁层形成闭合磁通路径的结构。

9. 发明授权

US07391641B2 Multi-layered magnetic memory structures 有权
标题翻译：多层磁记忆体结构
公开(公告)号：US07391641B2
公开(公告)日：2008-06-24
申请号：US11285991
申请日：2005-11-23
申请人： Manish Sharma , Lung Tran , Thomas C. Anthony
发明人： Manish Sharma , Lung Tran , Thomas C. Anthony
IPC分类号： G11C11/00
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08
摘要： An exemplary memory array including a plurality of memory cells, each of the memory cells comprises a first ferromagnetic layer, a second ferromagnetic layer spaced apart from the first ferromagnetic layer by a non-magnetic separating layer and being magnetically coupled to the first ferromagnetic layer by demagnetizing fields from the first ferromagnetic layer, a spacer layer above the second ferromagnetic layer, and a reference layer above the spacer layer. The first ferromagnetic layer, non-magnetic separating layer, and second ferromagnetic layer in combination function as a data layer of the memory cell.
摘要翻译：包括多个存储器单元的示例性存储器阵列，每个存储器单元包括第一铁磁层，通过非磁性分离层与第一铁磁层隔开的第二铁磁层，并且通过非磁性分离层磁耦合到第一铁磁层，并通过来自第一铁磁层的去磁场，第二铁磁层上方的间隔层，以及间隔层上方的基准层。第一铁磁层，非磁性分离层和第二铁磁层组合起来作为存储单元的数据层。

10. 发明授权

US06803274B2 Magnetic memory cell having an annular data layer and a soft reference layer 有权
标题翻译：具有环形数据层和软参考层的磁存储单元
公开(公告)号：US06803274B2
公开(公告)日：2004-10-12
申请号：US10233109
申请日：2002-08-30
申请人： Manish Sharma , Lung Tran
发明人： Manish Sharma , Lung Tran
IPC分类号： H01L21336
CPC分类号： H01L27/222 , H01L43/12
摘要： An exemplary nonvolatile memory array comprises a substrate and a plurality of memory cells formed on the substrate, each of the memory cells being addressable via at least first and second conductors during operations. An exemplary memory cell in the exemplary memory array includes a ferromagnetic annular data layer having an opening, the opening enabling the second conductor to electrically contact the first conductor, an intermediate layer on at least a portion of the annular data layer, and a soft reference layer on at least a portion of the intermediate layer.
摘要翻译：示例性非易失性存储器阵列包括衬底和形成在衬底上的多个存储器单元，每个存储器单元可在操作期间通过至少第一和第二导体寻址。示例性存储器阵列中的示例性存储器单元包括具有开口的铁磁环形数据层，该开口使得第二导体能够电接触第一导体，环形数据层的至少一部分上的中间层和软参考层在中间层的至少一部分上。

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