专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08123902B2 Gas flow diffuser 失效
标题翻译：气流扩散器
公开(公告)号：US08123902B2
公开(公告)日：2012-02-28
申请号：US11689031
申请日：2007-03-21
申请人： Paul Brillhart , Daniel J. Hoffman , James D. Carducci , Xiaoping Zhou , Matthew L. Miller
发明人： Paul Brillhart , Daniel J. Hoffman , James D. Carducci , Xiaoping Zhou , Matthew L. Miller
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/45502 , H01J37/3244 , H01J37/32449 , H01L21/67069 , Y10T137/85938
摘要： A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a chamber body having an interior volume, a substrate support disposed in the interior volume and a gas distribution assembly having an asymmetrical distribution of gas injection ports. In another embodiment, a method for vacuum processing a substrate is provided that includes disposing a substrate on a substrate support within in a processing chamber, flowing process gas into laterally into a space defined above a gas distribution plate positioned in the processing chamber over the substrate, and processing the substrate in the presence of the processing gas.
摘要翻译：提供了一种用于提供流入处理室的方法和装置。在一个实施例中，提供真空处理室，其包括具有内部容积的室主体，设置在内部容积中的基板支撑件和具有气体注入端口的不对称分布的气体分配组件。在另一个实施例中，提供了一种用于真空处理基板的方法，其包括将基板设置在处理室内的基板支撑件上，使处理气体横向流入位于位于处理室中的位于基板上的气体分配板上方的空间在处理气体的存在下处理基板。

22. 发明申请

US20080230518A1 GAS FLOW DIFFUSER 失效
标题翻译：气体流动扩散器
公开(公告)号：US20080230518A1
公开(公告)日：2008-09-25
申请号：US11689031
申请日：2007-03-21
申请人： Paul Brillhart , Daniel J. Hoffman , James D. Carducci , Xiaoping Zhou , Matthew L. Miller
发明人： Paul Brillhart , Daniel J. Hoffman , James D. Carducci , Xiaoping Zhou , Matthew L. Miller
IPC分类号： H01L21/306 , C23F1/00 , F16L41/00
CPC分类号： C23C16/45565 , C23C16/45502 , H01J37/3244 , H01J37/32449 , H01L21/67069 , Y10T137/85938
摘要： A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a chamber body having an interior volume, a substrate support disposed in the interior volume and a gas distribution assembly having an asymmetrical distribution of gas injection ports. In another embodiment, a method for vacuum processing a substrate is provided that includes disposing a substrate on a substrate support within in a processing chamber, flowing process gas into laterally into a space defined above a gas distribution plate positioned in the processing chamber over the substrate, and processing the substrate in the presence of the processing gas.
摘要翻译：提供了一种用于提供流入处理室的方法和装置。在一个实施例中，提供真空处理室，其包括具有内部容积的室主体，设置在内部容积中的基板支撑件和具有气体注入端口的不对称分布的气体分配组件。在另一个实施例中，提供了一种用于真空处理基板的方法，其包括将基板设置在处理室内的基板支撑件上，使处理气体横向流入位于位于处理室中的位于基板上的气体分配板上方的空间在处理气体的存在下处理基板。

23. 发明申请

US20130087286A1 SYMMETRIC PLASMA PROCESS CHAMBER 有权
标题翻译：对称等离子体处理室
公开(公告)号：US20130087286A1
公开(公告)日：2013-04-11
申请号：US13629267
申请日：2012-09-27
申请人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
发明人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC分类号： H05H1/46
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32091 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01J37/32733 , H01J37/32743 , H01J37/32834 , H01J2237/3321 , H01J2237/3323 , H01J2237/3344 , H05H1/46
摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
摘要翻译：本发明的实施例提供了一种等离子体室设计，其允许通过室极性对称的电，热和气流传导。通过提供这种对称性，在室内形成的等离子体自然地改善了设置在室的处理区域中的衬底的表面上的均匀性。此外，与常规系统相比，诸如提供操纵上电极和下电极之间的间隙以及气体入口和正被处理的衬底之间的间隙的其它腔室添加允许更好地控制等离子体处理和均匀性。

24. 发明授权

US06899111B2 Configurable single substrate wet-dry integrated cluster cleaner 失效
标题翻译：可配置单衬底湿干一体化清洁剂
公开(公告)号：US06899111B2
公开(公告)日：2005-05-31
申请号：US09999751
申请日：2001-10-31
申请人： Paul E. Luscher , James D. Carducci , Siamak Salimian , Michael D. Welch
发明人： Paul E. Luscher , James D. Carducci , Siamak Salimian , Michael D. Welch
IPC分类号： B08B3/04 , H01L21/00 , B08B3/00
CPC分类号： H01L21/67051 , B08B3/04 , H01L21/67028 , Y10S134/902 , Y10S438/905
摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes a chamber body having a processing cavity defined therein. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce and/or control rotation of the substrate during a cleaning and drying process.
摘要翻译：本发明提供一种清洗基板的方法和装置。清洁室限定适于在其中容纳衬底的处理腔。在一个实施例中，清洁室包括具有限定在其中的处理空腔的室主体。衬底被布置在处理空腔中，而不通过伯努利效应和/或衬底上方和/或下方的流体垫接触其它腔室部件。流体相对于基底的径向线以一定角度流入处理空腔，以在清洁和干燥过程中引导和/或控制基底的旋转。

25. 发明授权

US06221782B1 Adjusting DC bias voltage in plasma chamber 失效
公开(公告)号：US06221782B1
公开(公告)日：2001-04-24
申请号：US09287701
申请日：1999-04-06
申请人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
发明人： Hongching Shan , Evans Y. Lee , Michael D. Welch , Robert W. Wu , Bryan Y. Pu , Paul E. Luscher , James D. Carducci , Richard Blume
IPC分类号： H01L213065
CPC分类号： H01J37/32834 , H01J37/32477 , H01J37/32623 , H01J37/32706
摘要： A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrically grounded chamber wall. The cathode DC bias is adjusted by controlling one or more of the following parameters: (1) the surface area of the chamber wall or other grounded components which is blocked by the dielectric shield; (2) the thickness of the dielectric; (3) the gap between the shield and the chamber wall; and (4) the dielectric constant of the dielectric material. In an apparatus aspect, the invention is a plasma chamber for fabricating semiconductor devices having an exhaust baffle with a number of sinuous passages. Each passage is sufficiently long and sinuous that no portion of the plasma within the chamber can extend beyond the outlet of the passage. By blocking the plasma from reaching the exhaust pump, the exhaust baffle reduces the deposition of unwanted particles on exhaust pump components. The exhaust baffle also reduces the cathode DC bias by reducing the effective surface area of the electrically grounded chamber wall which couples RF power to the plasma.

26. 发明申请

US20130098882A1 ELECTRON BEAM PLASMA SOURCE WITH SEGMENTED BEAM DUMP FOR UNIFORM PLASMA GENERATION 有权
标题翻译：电子束等离子体源用于均匀等离子体生成
公开(公告)号：US20130098882A1
公开(公告)日：2013-04-25
申请号：US13595292
申请日：2012-08-27
申请人： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
发明人： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
IPC分类号： B23K15/00
CPC分类号： H01J37/3233 , G21K5/00 , H05H1/46 , H05H7/001
摘要： A plasma reactor that generates plasma in a workpiece processing chamber by an electron beam, has an electron beam source and segmented beam dump that is profiled to promote uniformity in the electron beam-produced plasma.
摘要翻译：通过电子束在工件处理室中产生等离子体的等离子体反应器具有电子束源和分段的束流，其形状是为了促进电子束产生的等离子体中的均匀性。

27. 发明申请

US20130098552A1 E-BEAM PLASMA SOURCE WITH PROFILED E-BEAM EXTRACTION GRID FOR UNIFORM PLASMA GENERATION 审中-公开
标题翻译： E-BEAM等离子体源，具有用于均匀等离子体生成的分布式电子束提取网
公开(公告)号：US20130098552A1
公开(公告)日：2013-04-25
申请号：US13595252
申请日：2012-08-27
申请人： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
发明人： Leonid Dorf , Shahid Rauf , Kenneth S. Collins , Nipun Misra , James D. Carducci , Gary Leray , Kartik Ramaswamy
IPC分类号： C23F1/08
CPC分类号： H01J37/3233 , H01J2237/06366
摘要： A plasma, reactor that relies on an electron beam as a plasma source employs a profiled electron beam extraction grid in an electron beam source to improve uniformity.
摘要翻译：依靠电子束作为等离子体源的等离子体反应器采用电子束源中的形状电子束提取栅格来改善均匀性。

28. 发明申请

US20120034136A1 SYMMETRIC VHF PLASMA POWER COUPLER WITH ACTIVE UNIFORMITY STEERING 失效
标题翻译：具有主动均匀转向的对称甚高频等离子功率耦合器
公开(公告)号：US20120034136A1
公开(公告)日：2012-02-09
申请号：US13050481
申请日：2011-03-17
申请人： Kenneth S. Collins , Zhigang Chen , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Andrew Nguyen
发明人： Kenneth S. Collins , Zhigang Chen , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Andrew Nguyen
IPC分类号： B01J19/08
CPC分类号： H01J37/32091 , H01J37/32577 , H05H1/46 , H05H2001/4622
摘要： A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.
摘要翻译：同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

29. 发明授权

US08920597B2 Symmetric VHF source for a plasma reactor 有权
标题翻译：等离子体反应器的对称VHF源
公开(公告)号：US08920597B2
公开(公告)日：2014-12-30
申请号：US13047052
申请日：2011-03-14
申请人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
发明人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
IPC分类号： H01L21/00 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
摘要： The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.
摘要翻译：本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

30. 发明授权

US06983892B2 Gas distribution showerhead for semiconductor processing 有权
标题翻译：用于半导体加工的气体分配喷头
公开(公告)号：US06983892B2
公开(公告)日：2006-01-10
申请号：US10772787
申请日：2004-02-05
申请人： Hamid Noorbakhsh , James D. Carducci , Jennifer Y. Sun , Larry D. Elizaga
发明人： Hamid Noorbakhsh , James D. Carducci , Jennifer Y. Sun , Larry D. Elizaga
IPC分类号： A01G27/00 , B05B5/00 , B05B1/14 , F23D11/32
CPC分类号： C23C16/45565
摘要： We have developed a gas distribution showerhead assembly, for use in a semiconductor processing chamber, which can be easily cleaned, with minimal chamber downtime. The gas distribution showerhead assembly includes an electrode having openings therethrough, and a gas distribution plate which includes a plurality of through-holes for delivering processing gases into the semiconductor processing chamber. The gas distribution plate is bonded to a first, lower major surface of the electrode. A removable insert which fits into an opening in the electrode through which gas flows. Spacing between surfaces of the removable insert and surfaces of the electrode is adequate to permit gas flow, but inadequate for plasma ignition within the opening. The removable insert can be easily removed during cleaning of the gas distribution showerhead, permitting the holes in the gas distribution plate to be easily accessed from both sides of the gas distribution plate.
摘要翻译：我们开发了一种用于半导体处理室的气体分配喷头组件，可以轻松清洁，并具有最小的室停机时间。气体分配喷头组件包括具有开口的电极，以及气体分配板，其包括用于将处理气体输送到半导体处理室中的多个通孔。气体分配板结合到电极的第一下表面。可拆卸的插入件，其装配在气体流过的电极的开口中。可拆卸插入件的表面与电极表面之间的间距足以允许气体流动，但不足以在开口内等离子体点火。在清洁气体分配喷头时可以容易地移除可移除的插入物，从而容易从气体分配板的两侧接近气体分配板中的孔。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式