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1. 发明申请

US20130087286A1 SYMMETRIC PLASMA PROCESS CHAMBER 有权
标题翻译：对称等离子体处理室
公开(公告)号：US20130087286A1
公开(公告)日：2013-04-11
申请号：US13629267
申请日：2012-09-27
申请人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
发明人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC分类号： H05H1/46
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32091 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01J37/32733 , H01J37/32743 , H01J37/32834 , H01J2237/3321 , H01J2237/3323 , H01J2237/3344 , H05H1/46
摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
摘要翻译：本发明的实施例提供了一种等离子体室设计，其允许通过室极性对称的电，热和气流传导。通过提供这种对称性，在室内形成的等离子体自然地改善了设置在室的处理区域中的衬底的表面上的均匀性。此外，与常规系统相比，诸如提供操纵上电极和下电极之间的间隙以及气体入口和正被处理的衬底之间的间隙的其它腔室添加允许更好地控制等离子体处理和均匀性。

2. 发明申请

US20120034136A1 SYMMETRIC VHF PLASMA POWER COUPLER WITH ACTIVE UNIFORMITY STEERING 失效
标题翻译：具有主动均匀转向的对称甚高频等离子功率耦合器
公开(公告)号：US20120034136A1
公开(公告)日：2012-02-09
申请号：US13050481
申请日：2011-03-17
申请人： Kenneth S. Collins , Zhigang Chen , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Andrew Nguyen
发明人： Kenneth S. Collins , Zhigang Chen , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Andrew Nguyen
IPC分类号： B01J19/08
CPC分类号： H01J37/32091 , H01J37/32577 , H05H1/46 , H05H2001/4622
摘要： A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.
摘要翻译：同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

3. 发明授权

US08652297B2 Symmetric VHF plasma power coupler with active uniformity steering 失效
标题翻译：具有有源均匀转向的对称VHF等离子体功率耦合器
公开(公告)号：US08652297B2
公开(公告)日：2014-02-18
申请号：US13050481
申请日：2011-03-17
申请人： Kenneth S. Collins , Zhigang Chen , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Andrew Nguyen
发明人： Kenneth S. Collins , Zhigang Chen , Kartik Ramaswamy , James D. Carducci , Shahid Rauf , Andrew Nguyen
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J7/24 , H05B31/26
CPC分类号： H01J37/32091 , H01J37/32577 , H05H1/46 , H05H2001/4622
摘要： A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.
摘要翻译：同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

4. 发明授权

US08920597B2 Symmetric VHF source for a plasma reactor 有权
标题翻译：等离子体反应器的对称VHF源
公开(公告)号：US08920597B2
公开(公告)日：2014-12-30
申请号：US13047052
申请日：2011-03-14
申请人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
发明人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
IPC分类号： H01L21/00 , C23C16/00 , H01J37/32
CPC分类号： H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
摘要： The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.
摘要翻译：本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

5. 发明申请

US20120043023A1 SYMMETRIC VHF SOURCE FOR A PLASMA REACTOR 有权
标题翻译：等离子体反应器的对称甚高频源
公开(公告)号：US20120043023A1
公开(公告)日：2012-02-23
申请号：US13047052
申请日：2011-03-14
申请人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
发明人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
IPC分类号： H01L21/306
CPC分类号： H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
摘要： The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.
摘要翻译：本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

6. 发明授权

US08313664B2 Efficient and accurate method for real-time prediction of the self-bias voltage of a wafer and feedback control of ESC voltage in plasma processing chamber 有权
标题翻译：用于实时预测晶圆的自偏压和等离子体处理室中ESC电压的反馈控制的高效准确的方法
公开(公告)号：US08313664B2
公开(公告)日：2012-11-20
申请号：US12623243
申请日：2009-11-20
申请人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
发明人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
IPC分类号： G01L21/30
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3299 , H01L21/6833
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压。

7. 发明申请

US20120018402A1 PLASMA PROCESSING APPARATUS AND LINER ASSEMBLY FOR TUNING ELECTRICAL SKEWS 审中-公开
标题翻译：等离子体加工设备和用于调谐电机的衬套组件
公开(公告)号：US20120018402A1
公开(公告)日：2012-01-26
申请号：US13184562
申请日：2011-07-17
申请人： James D. Carducci , Zhigang Chen , Shahid Rauf , Kenneth S. Collins
发明人： James D. Carducci , Zhigang Chen , Shahid Rauf , Kenneth S. Collins
IPC分类号： C23F1/00 , B32B3/24 , C23C14/48 , B32B1/08 , C23F1/08 , H05H1/24
CPC分类号： H01J37/32623 , H01J37/32082 , H01J37/32458 , H01J37/32495 , H01L21/67069 , Y10T428/13
摘要： The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.
摘要翻译：本发明公开了一种等离子体处理装置，其包括室盖，室主体和支撑组件。室主体限定用于容纳等离子体的处理容积，用于支撑室盖。腔室主体包括室侧壁，底壁和衬套组件。腔室侧壁和底壁限定用于容纳等离子体的处理体积。设置在处理容积内的衬套组件包括形成在其上的两个或更多个槽，用于提供轴对称RF电流路径。支撑组件支撑用于在室主体内进行加工的基板。利用具有多个对称槽的衬套组件，本发明可以防止其电磁场为方位角不对称。

8. 发明申请

US20100136793A1 EFFICIENT AND ACCURATE METHOD FOR REAL-TIME PREDICTION OF THE SELF-BIAS VOLTAGE OF A WAFER AND FEEDBACK CONTROL OF ESC VOLTAGE IN PLASMA PROCESSING CHAMBER 有权
标题翻译：用于实时预测水平自动偏置电压的有效和准确的方法和等离子体处理室中ESC电压的反馈控制
公开(公告)号：US20100136793A1
公开(公告)日：2010-06-03
申请号：US12623243
申请日：2009-11-20
申请人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
发明人： Zhigang Chen , Shahid Rauf , Walter R. Merry , Leonid Dorf , Kartik Ramaswamy , Kenneth S. Collins
IPC分类号： H01L21/3065
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/3299 , H01L21/6833
摘要： In a plasma reactor having an electrostatic chuck, wafer voltage may be determined from RF measurements at the bias input using previously determined constants based upon transmission line properties of the bias input, and this wafer voltage may be used to accurately control the DC wafer clamping voltage.
摘要翻译：在具有静电卡盘的等离子体反应器中，可以使用基于偏置输入的传输线特性的先前确定的常数，在偏置输入处的RF测量来确定晶片电压，并且该晶片电压可用于精确地控制DC晶片钳位电压。

9. 发明申请

US20090321019A1 RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS 有权
标题翻译：射频功率传输系统在半导体设备
公开(公告)号：US20090321019A1
公开(公告)日：2009-12-31
申请号：US12146189
申请日：2008-06-25
申请人： Zhigang Chen , Shahid Rauf , Kartik Ramaswamy
发明人： Zhigang Chen , Shahid Rauf , Kartik Ramaswamy
IPC分类号： C23F1/08
CPC分类号： H01J37/32706 , H01J37/32091
摘要： Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.
摘要翻译：本发明的实施例提供一种在处理室内提供良好RF均匀性的装置。在一个实施例中，装置包括基板支撑组件，端子和电介质绝缘体。基板支撑组件具有沿中心轴线形成的中心通道。提供RF传输线。 RF传输线具有基本上垂直的部分和基本上水平的部分，其中端子耦合到RF传输线的基本水平的部分。电介质绝缘体围绕RF传输线的大致水平部分。电介质绝缘体具有端子通过的第一开口。

10. 发明授权

US08206552B2 RF power delivery system in a semiconductor apparatus 有权
标题翻译： RF功率输送系统在半导体装置中
公开(公告)号：US08206552B2
公开(公告)日：2012-06-26
申请号：US12146189
申请日：2008-06-25
申请人： Zhigang Chen , Shahid Rauf , Kartik Ramaswamy
发明人： Zhigang Chen , Shahid Rauf , Kartik Ramaswamy
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01J37/32706 , H01J37/32091
摘要： Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.
摘要翻译：本发明的实施例提供一种在处理室内提供良好RF均匀性的装置。在一个实施例中，装置包括基板支撑组件，端子和电介质绝缘体。基板支撑组件具有沿着中心轴线形成的中心通道。提供RF传输线。 RF传输线具有基本上垂直的部分和基本上水平的部分，其中端子耦合到RF传输线的基本水平的部分。电介质绝缘体围绕RF传输线的大致水平部分。电介质绝缘体具有端子通过的第一开口。

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