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1. 发明授权

US06983892B2 Gas distribution showerhead for semiconductor processing 有权
标题翻译：用于半导体加工的气体分配喷头
公开(公告)号：US06983892B2
公开(公告)日：2006-01-10
申请号：US10772787
申请日：2004-02-05
申请人： Hamid Noorbakhsh , James D. Carducci , Jennifer Y. Sun , Larry D. Elizaga
发明人： Hamid Noorbakhsh , James D. Carducci , Jennifer Y. Sun , Larry D. Elizaga
IPC分类号： A01G27/00 , B05B5/00 , B05B1/14 , F23D11/32
CPC分类号： C23C16/45565
摘要： We have developed a gas distribution showerhead assembly, for use in a semiconductor processing chamber, which can be easily cleaned, with minimal chamber downtime. The gas distribution showerhead assembly includes an electrode having openings therethrough, and a gas distribution plate which includes a plurality of through-holes for delivering processing gases into the semiconductor processing chamber. The gas distribution plate is bonded to a first, lower major surface of the electrode. A removable insert which fits into an opening in the electrode through which gas flows. Spacing between surfaces of the removable insert and surfaces of the electrode is adequate to permit gas flow, but inadequate for plasma ignition within the opening. The removable insert can be easily removed during cleaning of the gas distribution showerhead, permitting the holes in the gas distribution plate to be easily accessed from both sides of the gas distribution plate.
摘要翻译：我们开发了一种用于半导体处理室的气体分配喷头组件，可以轻松清洁，并具有最小的室停机时间。气体分配喷头组件包括具有开口的电极，以及气体分配板，其包括用于将处理气体输送到半导体处理室中的多个通孔。气体分配板结合到电极的第一下表面。可拆卸的插入件，其装配在气体流过的电极的开口中。可拆卸插入件的表面与电极表面之间的间距足以允许气体流动，但不足以在开口内等离子体点火。在清洁气体分配喷头时可以容易地移除可移除的插入物，从而容易从气体分配板的两侧接近气体分配板中的孔。

2. 发明申请

US20130118686A1 TEMPERATURE CONTROLLED CHAMBER LINER 有权
标题翻译：温度控制室内衬
公开(公告)号：US20130118686A1
公开(公告)日：2013-05-16
申请号：US13632585
申请日：2012-10-01
申请人： James D. Carducci , Kallol Bera , Nipun Misra , Larry D. Elizaga
发明人： James D. Carducci , Kallol Bera , Nipun Misra , Larry D. Elizaga
IPC分类号： H01J37/32
CPC分类号： H01J37/32495 , H01J37/32522 , Y10T428/13 , Y10T428/21 , Y10T428/24273 , Y10T428/24479
摘要： A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.
摘要翻译：提供了一种用于半导体处理室和半导体处理室的衬垫。在一个实施例中，用于半导体处理室的衬垫包括具有向外延伸凸缘的本体。多个凸起从凸缘的底表面延伸。突起具有限定在凸缘的底表面周围不对称地分布的接触区域的底表面。

3. 发明授权

US09653267B2 Temperature controlled chamber liner 有权
公开(公告)号：US09653267B2
公开(公告)日：2017-05-16
申请号：US13632585
申请日：2012-10-01
申请人： James D. Carducci , Kallol Bera , Nipun Misra , Larry D. Elizaga
发明人： James D. Carducci , Kallol Bera , Nipun Misra , Larry D. Elizaga
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/32495 , H01J37/32522 , Y10T428/13 , Y10T428/21 , Y10T428/24273 , Y10T428/24479
摘要： A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.

4. 发明申请

US20140083978A1 TEMPERATURE CONTROLLED PLASMA PROCESSING CHAMBER COMPONENT WITH ZONE DEPENDENT THERMAL EFFICIENCES 审中-公开
标题翻译：温度控制等离子体加工室组件，具有相关的热效率
公开(公告)号：US20140083978A1
公开(公告)日：2014-03-27
申请号：US14087976
申请日：2013-11-22
申请人： Chetan Mahadeswaraswamy , Kallol Bera , Larry D. Elizaga
发明人： Chetan Mahadeswaraswamy , Kallol Bera , Larry D. Elizaga
IPC分类号： H01J37/02
CPC分类号： H01J37/02 , F28D2021/0028 , F28F7/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01L21/67069 , H01L21/67109 , H01L21/67248
摘要： Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.
摘要翻译：通过等离子体处理装置执行用于控制作为等离子体处理的工艺或室部件温度的部件和系统。第一传热流体通道设置在位于等离子体处理室内的工作表面的下方的部件中，使得位于工作表面的第一温度区域下方的第一通道的第一长度包括不同的传热系数h，或传热面积A比第一通道的第二长度低于工作表面的第二温度区域。在实施例中，提供不同的传热系数或传热面积作为温度区域的函数，以使第一和第二温度区域的温度控制更独立。

5. 发明授权

US08608852B2 Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies 有权
标题翻译：具有区域依赖热效率的温度控制等离子体处理室部件
公开(公告)号：US08608852B2
公开(公告)日：2013-12-17
申请号：US13111384
申请日：2011-05-19
申请人： Chetan Mahadeswaraswamy , Kallol Bera , Larry D. Elizaga
发明人： Chetan Mahadeswaraswamy , Kallol Bera , Larry D. Elizaga
IPC分类号： C23C16/00
CPC分类号： H01J37/02 , F28D2021/0028 , F28F7/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01L21/67069 , H01L21/67109 , H01L21/67248
摘要： Components and systems for controlling a process or chamber component temperature as a plasma process is executed by plasma processing apparatus. A first heat transfer fluid channel is disposed in a component subjacent to a working surface disposed within a plasma processing chamber such that a first length of the first channel subjacent to a first temperature zone of the working surface comprises a different heat transfer coefficient, h, or heat transfer area, A, than a second length of the first channel subjacent to a second temperature zone of the working surface. In embodiments, different heat transfer coefficients or heat transfer areas are provided as a function of temperature zone to make more independent the temperature control of the first and second temperature zones.
摘要翻译：通过等离子体处理装置执行用于控制作为等离子体处理的工艺或室部件温度的部件和系统。第一传热流体通道设置在位于等离子体处理室内的工作表面的下方的部件中，使得位于工作表面的第一温度区域下方的第一通道的第一长度包括不同的传热系数h，或传热区域A比第一通道的第二长度低于工作表面的第二温度区域。在实施例中，提供不同的传热系数或传热面积作为温度区域的函数，以使第一和第二温度区域的温度控制更独立。

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