专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US5620815A Exposure mask, exposure mask substrate, method for fabricating the same, and method for forming pattern based on exposure mask 失效
标题翻译：曝光掩模，曝光掩模基板，其制造方法以及基于曝光掩模形成图案的方法
公开(公告)号：US5620815A
公开(公告)日：1997-04-15
申请号：US471782
申请日：1995-06-06
申请人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
发明人： Shinichi Ito , Haruo Okano , Toru Watanabe , Katsuya Okumura
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26
摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask.The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant.Further, since in a mask including the semi-transparent pattern, at least that area of a non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.
摘要翻译：通过首先在透光性基板上形成稍大于所需尺寸的遮光膜或半透明膜图案（第一图案）而制成的图案之间具有优异的取向精度的曝光掩模，在其上形成半透明膜或透光膜图案（第二图案），以便包括由遮光部分，半透明部分和透光部分组成的所需尺寸的所有图案，然后去除第一图案的突出部分使用第二种图案作为掩模。半透明膜由至少两层形成，每层均含有共同的元素，因此可以使用相同的装置制造半透明膜，并且当图案化时，可以使用它们进行蚀刻工艺蚀刻剂此外，由于在包括半透明图案的掩模中，至少通过转印光到达晶片的非图案区域的面积起到屏蔽曝光光的作用，可以防止太窄的图案或不充分的焦深。

22. 发明申请

US20110212255A9 FILM FORMING METHOD, FILM FORMING APPARATUS, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS 失效
公开(公告)号：US20110212255A9
公开(公告)日：2011-09-01
申请号：US11987653
申请日：2007-12-03
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： C23C14/54 , B05C11/00
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

23. 发明授权

US07799368B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 有权
公开(公告)号：US07799368B2
公开(公告)日：2010-09-21
申请号：US11987653
申请日：2007-12-03
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： B05D3/12
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

24. 发明授权

US07312018B2 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US07312018B2
公开(公告)日：2007-12-25
申请号：US10927141
申请日：2004-08-27
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： G03F7/16 , G03F7/38
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N)
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将所述溶液供给到所述基板上以形成液膜，其中所述喷嘴的排出口与所述基板之间的距离h被设定为不小于2mm并且在小于5×10 -5的范围内，相对于溶液的表面张力γ（N / m）给出的SUP> qgamma（mm），通过排出口连续排出的溶液的排出速度q（m / sec）和5×10 -6 5（m.sec / N）

25. 发明申请

US20050026456A1 Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus 失效
标题翻译：成膜方法，成膜装置，图案形成方法以及半导体装置的制造方法
公开(公告)号：US20050026456A1
公开(公告)日：2005-02-03
申请号：US10927141
申请日：2004-08-27
申请人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
发明人： Shinichi Ito , Tatsuhiko Ema , Kei Hayasaki , Rempei Nakata , Nobuhide Yamada , Katsuya Okumura
IPC分类号： H01L21/027 , H01L21/00 , H01L21/20 , H01L21/288 , H01L21/316 , H01L21/31
CPC分类号： H01L21/6715 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02282 , H01L21/288 , H01L21/31633
摘要： There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 qγ (mm) given with respect to a surface tension γ (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N)
摘要翻译：公开了一种成膜方法，其特征在于，连续地排出通过设置在喷嘴中的排出口将调整后的液体以一定量向基板扩散至基板，使喷嘴和基板相对移动，将供给的溶液供给到基板上以形成液膜，其中喷嘴的排出口与基板之间的距离h被设定为不小于2mm，并且在小于5×10 -5 qmam ）相对于溶液的表面张力γ（N / m）给出，通过排出口连续排出的溶液的排出速度q（m / sec）和常数为5×10 -5（m.sec / N）

26. 发明授权

US06483083B2 Heat treatment method and a heat treatment apparatus for controlling the temperature of a substrate surface 失效
标题翻译：热处理方法和用于控制基板表面的温度的热处理装置
公开(公告)号：US06483083B2
公开(公告)日：2002-11-19
申请号：US09877147
申请日：2001-06-11
申请人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
发明人： Hideaki Sakurai , Akitoshi Kumagae , Iwao Higashikawa , Shinichi Ito , Tsunetoshi Arikado , Katsuya Okumura
IPC分类号： F27D1100
CPC分类号： G01J5/06 , G01J5/0003 , G05D23/27
摘要： A substrate to be processed on which a thin film is formed is supported by a support member. The substrate to be processed is heated by a heating section. The surface temperature is measured by a radiation thermometer, and the heating temperature of the heating section is controlled by a control section, in response to the temperature measured by the radiation thermometer. Further, a blackbody is provided at a position optically symmetrical to the radiation thermometer with respect to the surface of the thin film. The blackbody is set at a constant temperature. The blackbody cuts stray light (noise light) which enters into the radiation thermometer.
摘要翻译：其上形成有薄膜的待处理基板由支撑部件支撑。待加工的基板被加热部加热。通过辐射温度计测量表面温度，并且响应于由辐射温度计测量的温度，加热部分的加热温度由控制部分控制。此外，相对于薄膜的表面，在与辐射温度计光学对称的位置处设置黑体。黑体被设定在恒温。黑体切入进入辐射温度计的杂散光（噪声光）。

27. 发明授权

US06423977B1 Pattern size evaluation apparatus 失效
标题翻译：图案尺寸评估装置
公开(公告)号：US06423977B1
公开(公告)日：2002-07-23
申请号：US09030510
申请日：1998-02-25
申请人： Kei Hayasaki , Shinichi Ito , Kenji Kawano , Soichi Inoue , Katsuya Okumura
发明人： Kei Hayasaki , Shinichi Ito , Kenji Kawano , Soichi Inoue , Katsuya Okumura
IPC分类号： G01N2186
CPC分类号： G01N21/956
摘要： A pattern size evaluation apparatus comprising an illumination optical system for projecting parallel light rays of a predetermined wavelength on a monitoring area formed on an object, the monitoring area being formed at a position different from a device pattern formed on the object, a light intensity detection optical system for detecting diffracted light from the monitoring area, and a device pattern size evaluation section for evaluating a size of the device pattern based on an intensity of diffracted light from the monitoring area.
摘要翻译：一种图案尺寸评估装置，包括用于在形成在物体上的监视区域上投射预定波长的平行光线的照明光学系统，所述监视区域形成在与形成在物体上的装置图案不同的位置，光强度检测用于检测来自监视区域的衍射光的光学系统，以及用于基于来自监视区域的衍射光的强度来评估装置图案的尺寸的装置图案尺寸评估部。

28. 发明授权

US06265323B1 Substrate processing method and apparatus 失效
公开(公告)号：US06265323B1
公开(公告)日：2001-07-24
申请号：US09255659
申请日：1999-02-23
申请人： Hiroko Nakamura , Shinichi Ito , Katsuya Okumura
发明人： Hiroko Nakamura , Shinichi Ito , Katsuya Okumura
IPC分类号： H01L21302
CPC分类号： H01L21/6715 , G03F7/3021
摘要： Disclosed herein is a method for processing a substrate. The method includes supplying a liquid agent such as a developer onto the surface of a substrate, bringing an upper surface of a film formed of the liquid agent into contact with a liquid agent holding member arranged so as to face the substrate, holding the liquid agent between the substrate and the liquid agent holding member, moving the substrate or the liquid agent holding member, or both, in parallel to the main surface of the substrate, while the main surface of the substrate is being treated with the liquid agent. Since the concentrations of reaction products and starting reaction materials become uniform in the liquid agent which contacts the substrate, the entire substrate can be processed uniformly.

29. 发明授权

US06200633B1 Coating apparatus and coating method 有权
标题翻译：涂布设备和涂布方法
公开(公告)号：US06200633B1
公开(公告)日：2001-03-13
申请号：US09369835
申请日：1999-08-09
申请人： Takahiro Kitano , Katsuya Okumura , Shinichi Ito
发明人： Takahiro Kitano , Katsuya Okumura , Shinichi Ito
IPC分类号： B05D312
CPC分类号： H01L21/6715 , G03F7/162 , G05D11/132 , Y10T137/87652
摘要： Disclosed is a coating apparatus, comprising: a first stream-combining valve communicating with each of a first solvent tank and a resist solution tank, a first pump for supplying an initial resist solution from the resist solution tank toward said first stream-combining valve, a second pump for supplying a solvent from said first solvent supply toward said first stream-combining valve, a first mixer for mixing under stirring the initial resist solution flowing out of said first stream-combining valve with a solvent, a second stream-combining valve arranged downstream of said first mixer and communicating with each of the first mixer and said second solvent supply, a third pump for supplying the solvent from said second solvent supply toward the second stream-combining valve, a second mixer for mixing under stirring said primary mixed liquid material coming out of said second stream-combining valve with a solvent so as to prepare a final mixed liquid material, a nozzle equipped with a liquid spurting port for spurting said final mixed liquid material prepared in said second mixer toward the substrate, and a controller for controlling each of the first, second, third pumps and the first and second stream-combining valves so as to control the mixing ratio of the initial resist solution to the solvent and to control the mixing ratio of the primary mixed liquid material to the solvent.
摘要翻译：公开了一种涂布装置，包括：与第一溶剂罐和抗蚀剂溶液罐中的每一个连通的第一流合并阀，用于从抗蚀剂溶液箱朝向所述第一流合并阀提供初始抗蚀剂溶液的第一泵，用于从所述第一溶剂供应源向所述第一流合并阀供应溶剂的第二泵，用于在搅拌下混合从所述第一流合并阀流出的初始抗蚀剂溶液与溶剂混合的第一混合器，第二流合并阀布置在所述第一混合器的下游并与所述第一混合器和所述第二溶剂供应源连通;第三泵，用于从所述第二溶剂供应源向第二流合并阀供应溶剂;第二混合器，用于在搅拌下混合，用溶剂从所述第二流合并阀出来的液体材料，以制备最终的混合液体材料，配备有喷嘴的喷嘴用于将在所述第二混合器中制备的所述最终混合液体材料喷射到基板的液体喷出口，以及用于控制第一，第二和第三泵以及第一和第二流合并阀中的每一个的控制器，以便控制混合比初始抗溶液溶解于溶剂，并控制初级混合液体材料与溶剂的混合比例。

30. 发明授权

US6162745A Film forming method 失效
标题翻译：成膜方法
公开(公告)号：US6162745A
公开(公告)日：2000-12-19
申请号：US385363
申请日：1999-08-30
申请人： Shinichi Ito , Katsuya Okumura , Koutarou Sho
发明人： Shinichi Ito , Katsuya Okumura , Koutarou Sho
IPC分类号： H01L21/3205 , G03F7/16 , G03F9/00 , H01L21/027 , H01L21/31 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： G03F9/7084 , G03F7/16 , H01L21/0276 , H01L21/316
摘要： A film forming method includes the steps of forming a solution film, by dropwise supplying a solution containing solid contents in a solvent and volatilizing the solvent, and selectively forming a film of the solid contents on a to-be-processed substrate at predetermined areas, the method comprising the steps of selectively irradiating an energy beam onto that substrate surface to allow the substrate surface to be modified and forming a filmed area having a high affinity for the solvent and a non-filmed area having a low affinity for the solvent, dropwise supplying the solution to the substrate surface and forming the solution film, and volatilizing the solvent from the solution film and, by doing so, forming a solid contents film selectively on the substrate surface selectively at filmed areas.
摘要翻译：成膜方法包括以下步骤：通过在溶剂中滴加含有固体成分的溶液并挥发溶剂，并在预定区域的待处理基材上选择性地形成固体成分的膜，形成溶液膜，该方法包括以下步骤：将能量束选择性地照射到该衬底表面上以允许衬底表面被修饰并且形成对溶剂具有高亲和力的成膜区域和对该溶剂具有低亲和力的非成膜区域将溶液供给到基板表面并形成溶液膜，并从溶液膜中挥发溶剂，并且通过这样做在选择性地在成膜区域上在基板表面上选择性地形成固体成分膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式