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21. 发明授权

US5903015A Field effect transistor using diamond 失效
标题翻译：场效应晶体管采用金刚石
公开(公告)号：US5903015A
公开(公告)日：1999-05-11
申请号：US528028
申请日：1995-09-14
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H05H1/46 , H01L21/31 , H01L21/338 , H01L29/10 , H01L29/16 , H01L29/80 , H01L29/812 , H01L31/312
CPC分类号： H01L29/1602 , H01L29/1029
摘要： A field effect transistor in accordance with the present invention comprises a buffer layer made of a highly resistant diamond on a substrate; an active layer which is made of a conductive diamond on the buffer layer and has such a dopant concentration that conduction of carriers is metallically dominated thereby and such a thickness that dopant distribution is two-dimensionally aligned thereby; a cap layer made of a highly resistant diamond on the active layer; a gate electrode layer formed on the cap layer so as to make Schottky contact therewith; and a source electrode layer and a drain electrode layer which make ohmic contact with a laminate structure of said buffer, active and cap layers. Namely, the active layer is formed as a so-called .delta.-dope layer or pulse-dope layer doped with a conductive dopant, while being held between both highly resistant buffer and cap layers. Accordingly, even when the dopant concentration in the conductive diamond layer is increased, a high gain, as an excellent controllability and an excellent temperature-stability in operation characteristics can be obtained.
摘要翻译：根据本发明的场效应晶体管包括由衬底上的高抗性金刚石制成的缓冲层; 在缓冲层上由导电金刚石制成的有源层具有这样的掺杂剂浓度，使得载流子的导电由此被金属化地控制，并且这样的厚度使得掺杂剂分布由二维排列; 在有源层上由耐高度金刚石制成的盖层; 形成在所述盖层上以使其肖特基接触的栅电极层; 以及与所述缓冲层，活性层和盖层的叠层结构欧姆接触的源电极层和漏电极层。也就是说，有源层被形成为所谓的增量掺杂层或掺杂有导电掺杂剂的脉冲 - 掺杂层，同时保持在高电阻缓冲层和盖层之间。因此，即使当导电金刚石层中的掺杂剂浓度增加时，也可以获得作为优异的可控性和优异的操作特性温度稳定性的高增益。

22. 发明授权

US5844252A Field emission devices having diamond field emitter, methods for making same, and methods for fabricating porous diamond 失效
标题翻译：具有金刚石场致发射体的场致发射器件，其制造方法以及制造多孔金刚石的方法
公开(公告)号：US5844252A
公开(公告)日：1998-12-01
申请号：US690173
申请日：1996-07-25
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
IPC分类号： H01J1/304 , H01J1/02 , H01J1/14
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： A field emission device according to the present invention comprises a support substrate; a cathode mounted on a surface of said support substrate; a first diamond portion located on any surface of said substrate, said first diamond portion substantially having an electrical connection with said cathode; a second diamond portion located on the substrate surface on which said first diamond portion is also located, said second diamond portion including plurality of diamond protuberances; and an anode positioned spaced apart from said first and second diamond portions, wherein a space is formed between said anode and said second diamond portion.
摘要翻译：根据本发明的场致发射器件包括支撑衬底; 阴极，其安装在所述支撑基板的表面上; 位于所述衬底的任何表面上的第一金刚石部分，所述第一金刚石部分基本上与所述阴极电连接; 位于所述第一金刚石部分也位于所述基底表面上的第二金刚石部分，所述第二金刚石部分包括多个金刚石突起; 以及与所述第一和第二金刚石部分间隔开的阳极，其中在所述阳极和所述第二金刚石部分之间形成空间。

23. 发明授权

US5600156A Diamond semiconductor device with P-I-N type multilayer structure 失效
标题翻译：具有P-I-N型多层结构的金刚石半导体器件
公开(公告)号：US5600156A
公开(公告)日：1997-02-04
申请号：US303112
申请日：1994-09-08
申请人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
发明人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
IPC分类号： C30B29/04 , H01L29/16 , H01L29/74 , H01L29/772 , H01L29/861 , H01L31/0312 , H01L29/167 , H01L31/075
CPC分类号： H01L29/1602 , H01L29/74 , H01L29/7722
摘要： A diamond semiconductor device of the present invention comprises an n-type diamond layer to which an n-type dopant is doped at high concentration so that metal conduction dominates, a p-type diamond layer to which a p-type dopant is doped at high concentration so that metal conduction dominates, and a high resistance diamond layer formed between the n-type diamond layer and the p-type diamond layer. Here, the thickness and the doping concentration of the high resistance diamond layer are values at which semiconductor conduction dominates. Then, in a case that an applied voltage is forward bias, electrons are injected from the n-type region to the p-type region through the conduction band of the high resistance region, and holes are injected from the p-type region to the n-type region through the valance band of the high resistance region, so that a current flows. On the other hand, in a case that an applied voltage is reverse bias because substantially no dopant is doped to the high resistance diamond layer, carriers are not present, so that a large current does not flow. Therefore, semiconductor conduction dominates as carrier conduction in pn junction and the rectification can be obtained, so that with the control of carriers, good diode characteristics or transistor characteristics can be achieved.
摘要翻译：本发明的金刚石半导体器件包括n型金刚石层，以高浓度掺杂n型掺杂剂以使金属导电占主导地位，p型掺杂剂掺杂在高的p型金刚石层浓度使得金属导电占主导地位，并且在n型金刚石层和p型金刚石层之间形成高电阻金刚石层。这里，高电阻金刚石层的厚度和掺杂浓度是半导体传导占主导地位的值。然后，在施加的电压为正向偏压的情况下，通过高电阻区域的导带从n型区域向p型区域注入电子，从p型区域注入空穴 n型区域通过高电阻区域的价带，使得电流流动。另一方面，在施加的电压为反向偏压的情况下，由于基本上没有掺杂剂掺杂到高电阻金刚石层，所以不存在载流子，使得大的电流不流动。因此，半导体传导作为pn结中的载流子导通，可以获得整流，因此通过载流子的控制，可以实现良好的二极管特性或晶体管特性。

24. 发明授权

US5527735A Ohmic electrode of n-type semiconductor cubic boron nitride and method of producing same 失效
标题翻译： n型半导体立方氮化硼的欧姆电极及其制造方法
公开(公告)号：US5527735A
公开(公告)日：1996-06-18
申请号：US428445
申请日：1995-04-25
申请人： Tadashi Tomikawa , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Tadashi Tomikawa , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01L29/43 , H01L21/28 , H01L21/285 , H01L29/45 , H01L33/30 , H01L33/32 , H01L33/40 , H01L21/44
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/452 , H01L33/32 , Y10S148/113
摘要： N-type c-BN is a heat-resistant material with a wide band gap. Ohmic electrodes are indispensable for making semiconductor devices utilizing n-type c-BN. The electrodes proposed so far are likely to deteriorate in an atmosphere of high temperature. The degradation of electrodes hinders the production of semiconductor devices utilizing c-BN. A heat-resistant ohmic electrode is produced by forming a low contact resistance layer of a boride or a nitride of Ti, Zr or Hf on a heated c-BN and by covering the low resistance layer by an Au layer. Otherwise an ohmic electrode is produced by forming a low contact resistance layer of one of Ti, Zr, Hf, etc. on c-BN, making a diffusion barrier layer of W, Mo, Ta or Pt and depositing an Au layer on the diffusion barrier layer.
摘要翻译： N型c-BN是具有宽带隙的耐热材料。欧姆电极对于制造使用n型c-BN的半导体器件是必不可少的。目前提出的电极在高温环境中可能会劣化。电极的降解阻碍了利用c-BN的半导体器件的生产。通过在加热的c-BN上形成硼化物或Ti，Zr或Hf的氮化物的低接触电阻层，并通过Au层覆盖低电阻层来制造耐热欧姆电极。另外，通过在c-BN上形成Ti，Zr，Hf等中的一个的低接触电阻层来制造欧姆电极，制成W，Mo，Ta或Pt的扩散阻挡层，并在扩散层上沉积Au层阻挡层。

25. 发明授权

US5757032A Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature 失效
标题翻译：半导体金刚石器件具有改进的金刚石接触，在高温下具有出色的操作稳定性
公开(公告)号：US5757032A
公开(公告)日：1998-05-26
申请号：US510220
申请日：1995-08-02
申请人： Yoshiki Nishibayashi , Hiromu Shiomi , Shin-ichi Shikata
发明人： Yoshiki Nishibayashi , Hiromu Shiomi , Shin-ichi Shikata
IPC分类号： H01L21/28 , H01L21/04 , H01L29/43 , H01L29/47 , H01L29/872 , H01L31/0312 , H01L23/48 , H01L23/52 , H01L27/095
CPC分类号： H01L21/043 , H01L21/0435
摘要： A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further including a second metal section which is in contact with the first metal section and which has a thickness of equal to or larger than four times the thickness of the first metal section. The second metal section is made of a metal having a melting point of 1000.degree. C. or higher.
摘要翻译：一种半导体器件，包括形成在半导体金刚石上的电极。电极包括与半导体金刚石的表面接触并且具有100nm或更小的厚度的第一金属部分，并且还包括与第一金属部分接触的第二金属部分，并且具有厚度等于或大于第一金属部分的厚度的四倍。第二金属部分由熔点为1000℃以上的金属制成。

26. 发明授权

US5225398A Method for forming an oxide superconducting film having different crystal orientation on different regions of a Si substrate 失效
标题翻译：在SI基板的不同区域形成具有不同晶体取向的氧化物超导膜的方法
公开(公告)号：US5225398A
公开(公告)日：1993-07-06
申请号：US857550
申请日：1992-03-26
申请人： Hidenori Nakanishi , Shin-ichi Shikata , Itozaki Hideo
发明人： Hidenori Nakanishi , Shin-ichi Shikata , Itozaki Hideo
IPC分类号： C01G1/00 , C01G3/00 , C04B41/89 , C23C14/06 , C30B29/22 , H01B12/06 , H01L39/24
CPC分类号： H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/73 , Y10S505/731
摘要： A [100] oriented ZrO.sub.2 thin film is formed on selected regions of a [100] deposition surface of a silicon substrate, and a Y.sub.2 O.sub.3 thin film deposited on the ZrO.sub.2 thin film and exposed regions of the deposition surface of the silicon substrate. A Y-Ba-Cu type compound oxide superconducting thin is deposited on the Y.sub.2 O.sub.3 thin film. The Y-Ba-Cu type compound oxide superconducting thin film positioned above the ZrO.sub.2 thin film is crystal-grown in a [001] orientation, and the Y-Ba-Cu type compound oxide superconducting thin film is crystal-grown in a [110] orientation in the other region.

27. 发明授权

US5943555A Micro mechanical component and production process thereof 失效
标题翻译：微机械部件及其生产工艺
公开(公告)号：US5943555A
公开(公告)日：1999-08-24
申请号：US954307
申请日：1997-10-17
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： B81B3/00 , B81C1/00 , G01C19/56 , G01H3/08 , G01H11/00 , G01H11/06 , G01L9/00 , G01P15/08 , G01P15/125 , G01Q70/14 , G01Q80/00 , H01L21/00
CPC分类号： G01P15/0802 , B81B3/007 , B81C1/0015 , B81C1/00682 , G01H11/00 , G01H11/06 , G01H3/08 , G01P15/125 , B81B2201/0235 , B81B2201/0264 , B81B2201/034 , B81B2201/035 , B81B2201/054 , B81B2203/0118 , B81B2203/04 , B81C2201/0109 , G01P2015/0828
摘要： A micro mechanical component of the present invention comprises a base, and at least one drive portion supported on the base and relatively driving to the base, in which the drive portion is formed from a diamond layer. Thus, because the drive portion has excellent mechanical strength and modulus of elasticity, the operational performance can be greatly improved as a micro mechanical component processed in a fine shape, from the conventional level. Further, because the drive portion exhibits excellent device characteristics under severe circumstances, the range of applications as a micro mechanical component can be widely expanded from the conventional range.
摘要翻译：本发明的微型机械部件包括基座和至少一个支撑在基座上并相对驱动到基座的驱动部分，驱动部分由金刚石层形成。因此，由于驱动部具有优异的机械强度和弹性模量，因此从以往的水平来看，作为微细的机械零件加工成微细的机械部件，可以大大提高其操作性能。此外，由于驱动部在恶劣的环境下表现出优异的器件特性，所以作为微机械部件的应用范围可以从传统的范围得到广泛的扩展。

28. 发明授权

US5812573A Semiconductor lasers comprising rare earth metal-doped diamond 失效
标题翻译：包含稀土金属掺杂金刚石的半导体激光器
公开(公告)号：US5812573A
公开(公告)日：1998-09-22
申请号：US616552
申请日：1996-03-15
申请人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
发明人： Hiromu Shiomi , Yoshiki Nishibayashi , Shin-ichi Shikata
IPC分类号： H01S3/094 , H01S3/06 , H01S3/16 , H01S3/19
CPC分类号： H01S3/16 , H01S3/1603 , H01S3/1628 , H01S3/163
摘要： In general, the semiconductor laser device of the present invention comprises an emitting element comprising a doped diamond, which is doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal. The semiconductor laser device assembly according to the present invention comprises an emitting element of a doped diamond, which is a diamond doped with atoms of at least one rare earth metal and/or molecules of at least one compound containing a rare earth metal, and a thermal releasing element of a substantially undoped diamond, on which the semiconductor laser device are placed.
摘要翻译：通常，本发明的半导体激光器件包括掺杂有金刚石的发光元件，该金刚石掺杂有至少一种稀土金属的原子和/或至少一种含有稀土金属的化合物的分子。根据本发明的半导体激光器件组件包括掺杂金刚石的发光元件，掺杂金刚石是掺杂有至少一种稀土金属的原子的金刚石和/或至少一种含有稀土金属的化合物的分子，以及放置半导体激光装置的基本上未掺杂的金刚石的热释放元件。

29. 发明授权

US5670796A Semiconductor device consisting of a semiconductor material having a deep impurity level 失效
标题翻译：半导体器件由具有深杂质水平的半导体材料构成
公开(公告)号：US5670796A
公开(公告)日：1997-09-23
申请号：US619105
申请日：1996-03-20
申请人： Yoshiki Nishibayashi , Shin-ichi Shikata , Naoji Fujimori , Takeshi Kobayashi
发明人： Yoshiki Nishibayashi , Shin-ichi Shikata , Naoji Fujimori , Takeshi Kobayashi
IPC分类号： C30B29/04 , H01L29/12 , H01L29/15 , H01L29/16 , H01L29/167 , H01L29/207 , H01L29/267 , H01L31/0312
CPC分类号： H01L29/1602 , H01L29/157 , H01L29/16 , H01L29/167 , H01L29/207 , H01L29/267
摘要： A semiconductor device has a structure in which doped layers and undoped layers are alternately stacked and is constituted by (a) a semi-insulating substrate, (b) undoped layers consisting of a substantially undoped diamond material, and (c) thin doped layers formed between the undoped layers and consisting of a diamond material doped with B as an impurity. Stable operation characteristics can be obtained within a temperature range from room temperature to a high temperature while a semiconductor material having a deep impurity level is used.
摘要翻译：半导体器件具有这样的结构，其中掺杂层和未掺杂层交替堆叠并且由（a）半绝缘衬底，（b）由基本上未掺杂的金刚石材料组成的未掺杂层，和（c）形成的薄掺杂层在未掺杂的层之间并且由掺杂有B作为杂质的金刚石材料组成。在室温至高温的温度范围内可以获得稳定的操作特性，同时使用具有深度杂质浓度的半导体材料。

30. 发明授权

US5552613A Electron device 失效
标题翻译：电子器件
公开(公告)号：US5552613A
公开(公告)日：1996-09-03
申请号：US311463
申请日：1994-09-22
申请人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
发明人： Yoshiki Nishibayashi , Tadashi Tomikawa , Shin-ichi Shikata
IPC分类号： H01J1/304 , H01J9/02 , H01J1/02 , H01J1/14
CPC分类号： H01J1/3042 , H01J2201/30457
摘要： An electron device of the present invention comprises an i-type diamond layer formed on a substrate, and an n-type diamond layer formed on the i-type diamond layer and having a first surface region formed flatly and a second surface region containing an emitter portion, which are set in a vacuum container, in which the emitter portion formed of the n-type diamond has a bottom area 10 or less .mu.m square and projects relative to the first surface region. In the n-type diamond layer, a difference is fine between the conduction band and the vacuum level. Also, since the n-type diamond layer is doped with an n-type dopant in a high concentration, metal conduction is dominant as conduction of electrons. Therefore, setting the temperature of the substrate at a predetermined temperature and generating an electric field near the surface of the emitter portion, electrons are emitted with a high efficiency from the tip portion of the emitter portion into the vacuum. Even though the emitter portion does not have a tip portion formed in a very fine shape, electrons can readily be taken out into the vacuum by the field emission with relatively small field strength. Consequently, the emission current and the current gain increase and the current density in the emitter portion decreases, thus increasing the withstand current or withstand voltage.
摘要翻译：本发明的电子器件包括形成在衬底上的i型金刚石层和形成在i型金刚石层上的n型金刚石层，并且具有平坦地形成的第一表面区域和包含发射极的第二表面区域其设置在真空容器中，其中由n型金刚石形成的发射极部分的底部面积为10μm或更小，并且相对于第一表面区域突出。在n型金刚石层中，导带和真空度之间的差异很小。此外，由于n型金刚石层以高浓度掺杂n型掺杂剂，所以金属导电作为电子的传导是主要的。因此，将基板的温度设定在规定的温度并在发射极部的表面附近产生电场，从发射极部的顶端向真空发射高效率的电子。尽管发射极部分不具有形成为非常细的形状的尖端部分，但是通过具有相对小的场强的场发射，电子可以容易地被引出到真空中。因此，发射电流和电流增益增加，并且发射极部分中的电流密度降低，从而增加了耐受电流或耐受电压。

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