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21. 发明授权

US4882008A Dry development of photoresist 失效
标题翻译：光刻胶的干燥发展
公开(公告)号：US4882008A
公开(公告)日：1989-11-21
申请号：US216884
申请日：1988-07-08
申请人： Cesar M. Garza , Monte A. Douglas , Lee M. Loewenstein , Cecil J. Davis
发明人： Cesar M. Garza , Monte A. Douglas , Lee M. Loewenstein , Cecil J. Davis
IPC分类号： G03F7/26 , H01L21/311
CPC分类号： H01L21/31138 , G03F7/265
摘要： A process for developing a photolithographic pattern on the surface of an exposed workpiece in a process chamber; disposing the workpiece in a process chamber; heating the workpiece and introducing a silylating agent to the process chamber and to a face of the workpiece to be processed; generating activated species from a source of oxygen; and introducing the activated species to the face of the workpiece.
摘要翻译：一种用于在处理室中暴露的工件的表面上显影光刻图案的工艺; 将工件放置在处理室中; 加热工件并将甲硅烷基化剂引入处理室和待加工的工件的表面; 从氧源产生活化物质; 并将活化物质引入到工件的表面。

22. 发明授权

US4875989A Wafer processing apparatus 失效
标题翻译：晶圆加工设备
公开(公告)号：US4875989A
公开(公告)日：1989-10-24
申请号：US283036
申请日：1988-12-05
申请人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
发明人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Joe V. Abernathy , Timothy A. Wooldridge
IPC分类号： G03F7/16 , H01L21/00
CPC分类号： H01L21/67017 , G03F7/168
摘要： A processing apparatus and method for edge-preferential processing of partially fabricated integrated circuit wafers or of other substantially flat and thin workpieces. A plasma remote from the workpiece is used to generate activated species, and a baffle which is in proximity to the wafer face but not in contact with it is used to direct the stream of activated species. This module can be set up to perform both edge bead removal and bake of spun-on photoresist.
摘要翻译：一种用于部分制造的集成电路晶片或其它基本上平坦和薄的工件的边缘优先处理的处理装置和方法。使用远离工件的等离子体产生活化物质，并且靠近晶片表面而不与其接触的挡板用于引导活化物质流。该模块可以设置为执行旋转光刻胶的边缘珠去除和烘烤。

23. 发明授权

US4842686A Wafer processing apparatus and method 失效
标题翻译：晶圆加工设备及方法
公开(公告)号：US4842686A
公开(公告)日：1989-06-27
申请号：US75016
申请日：1987-07-17
申请人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
发明人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
IPC分类号： H01L21/302 , C23C16/48 , C23C16/517 , C23C16/54 , G03F7/20 , H01L21/027 , H01L21/3065 , H01L21/31 , H01L21/677
CPC分类号： G03F7/70808 , C23C16/482 , C23C16/517 , C23C16/54 , G03F7/70866
摘要： A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.

24. 发明授权

US4832778A Processing apparatus for wafers 失效
标题翻译：晶圆加工设备
公开(公告)号：US4832778A
公开(公告)日：1989-05-23
申请号：US201299
申请日：1988-05-27
申请人： Cecil J. Davis , Dean W. Freeman , Robert T. Matthews , Joel T. Tomlin
发明人： Cecil J. Davis , Dean W. Freeman , Robert T. Matthews , Joel T. Tomlin
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687
CPC分类号： H01L21/67748 , H01L21/67115 , H01L21/6719 , H01L21/67751 , H01L21/68785
摘要： A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpieces which may be loaded into the chamber.
摘要翻译：一种与其中晶片在真空下大量输送和处理的系统兼容的高压处理设备和方法。压力容器可以非常小，即具有总加压体积，其几乎所有内部点都可以装载到腔室中的一个工件的一或两厘米内。

25. 发明授权

US4830700A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4830700A
公开(公告)日：1989-05-16
申请号：US188177
申请日：1988-04-27
申请人： Cecil J. Davis , Robert T. Matthews , Wayne G. Fisher
发明人： Cecil J. Davis , Robert T. Matthews , Wayne G. Fisher
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A radiant heating processing apparatus and method for a rapid thermal processing system, wherein only the base of the reflector module is directly water cooled. The sides of the reflector module are not directly water cooled; instead, the module is made to be a slip fit into a chamber which does have water cooled walls. Thus, in applications where it is desired to be able to fit a rapid thermal processing radiant heating source through a restricted clearance, especially in application where it is desired to be able to insert the module through a vacuum flange, the necessary clearance is reduced by the width which would otherwise be required for water cooling of the sidewalls.
摘要翻译：一种用于快速热处理系统的辐射加热处理装置和方法，其中只有反射器模块的基底直接水冷。反射器模块的两侧不直接水冷; 相反，该模块被制成一个滑动配合到具有水冷壁的室中。因此，在希望能够通过限制的间隙适应快速热处理辐射热源的应用中，特别是在希望能够通过真空法兰插入模块的应用中，必要的间隙通过否则将需要用于侧壁的水冷却的宽度。

26. 发明授权

US06444103B1 Method and apparatus for thin film deposition using an active shutter 失效
标题翻译：使用主动快门进行薄膜沉积的方法和装置
公开(公告)号：US06444103B1
公开(公告)日：2002-09-03
申请号：US09662575
申请日：2000-09-15
申请人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Yong Jin Lee , Cecil J. Davis , Ajit P. Paranjpe
IPC分类号： C23C1434
CPC分类号： H01J37/3447 , C23C14/3464 , C23C14/564
摘要： Material is deposited from an active shutter onto a substrate located in a processing chamber housing with a shutter target coupled to a shutter target assembly. A first target assembly located in the housing supports a target for physical-vapor deposition of a first material onto the substrate. A shutter is selectively moveable to extend into a closed or activated position and to retract into an open position. The shutter target assembly is coupled to the shutter such that when the shutter is in the closed position, the shutter target assembly is positioned to allow deposition of material from the shutter target onto the substrate. When the shutter is in the open position, the first target is positioned to deposit material onto the substrate. Alternating layers of materials may be deposited by the shutter target and first target by cycling the shutter between an open position and a closed position.
摘要翻译：材料从活动快门沉积到位于处理室壳体中的基板上，其中快门目标件联接到快门目标组件。位于壳体中的第一目标组件支撑用于将第一材料物理 - 气相沉积到衬底上的靶。快门选择性地可移动以延伸到关闭或启动位置并缩回到打开位置。快门目标组件联接到快门，使得当快门处于关闭位置时，快门目标组件被定位成允许材料从快门目标物体沉积到基板上。当快门处于打开位置时，第一目标定位成将材料沉积到基板上。通过在打开位置和关闭位置之间循环活门，可以通过快门目标和第一目标来沉积材料的交替层。

27. 发明授权

US6073576A Substrate edge seal and clamp for low-pressure processing equipment 失效
标题翻译：用于低压加工设备的基板边缘密封和夹具
公开(公告)号：US6073576A
公开(公告)日：2000-06-13
申请号：US977822
申请日：1997-11-25
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： C23C14/50 , C23C16/458 , C23C16/00
CPC分类号： C23C14/50 , C23C16/4585 , Y10S414/136 , Y10S414/14 , Y10S414/141 , Y10T279/35
摘要： A low-pressure processor for processing substrates includes a chuck that engages the substrates' peripheries for purposes of clamping, sealing, and centering the substrates on chuck bodies. For accomplishing all three purposes, a mechanical clamp can be arranged with two sealing regions. One of the sealing regions seals the clamp to a chuck body or an extension of the chuck body, and another of the sealing regions engages a peripheral edge surface of a substrate for sealing the clamp to the substrate. The second sealing region includes an inclined seating surface that engages a front edge of the substrate's peripheral edge surface and divides a clamping force into a first component that presses the substrate against the chuck body and a second component that centers the substrate on the chuck body. The peripheral engagement of the substrate exposes substantially the entire front surface of the substrate to processing and exposes substantially the entire back surface of the substrate to a heat-transfer gas for enhancing thermal transfers between the substrate and the temperature-regulated chuck body.
摘要翻译：用于处理基板的低压处理器包括与基板周边接合的卡盘，用于夹紧，密封和将基板对准在卡盘体上。为了实现所有这三个目的，机械夹具可以布置有两个密封区域。一个密封区域将夹具密封到卡盘主体或卡盘主体的延伸部分，另一个密封区域与基板的周边边缘表面接合，以将夹具密封到基板。第二密封区域包括倾斜的就座表面，其与衬底的周边边缘表面的前边缘接合并且将夹紧力分成第一部件，该第一部件将衬底压靠在卡盘主体上;以及第二部件，其将衬底定位在卡盘主体上。衬底的周边接合基本上暴露了衬底的整个前表面，从而基本上将衬底的整个后表面基本上暴露于传热气体，以增强衬底和温度调节卡盘体之间的热传递。

28. 发明授权

US6039848A Ultra-high vacuum apparatus and method for high productivity physical vapor deposition. 失效
标题翻译：超高真空装置和高生产率物理气相沉积方法。
公开(公告)号：US6039848A
公开(公告)日：2000-03-21
申请号：US958877
申请日：1997-10-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Dorian Heimanson
IPC分类号： C23C14/35 , C23C14/56 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/564
摘要： A magnetron sputtering system is provided that uses a backing plate assembly having an insulating spacer ring coupled between and hermetically sealed to the backing plate and an extender ring. The insulating spacer ring can be constructed from a ceramic material, and the extender ring can be constructed from a metal material. The use of this backing plate assembly allows the backing plate assembly to be coupled directly to the chamber walls with a metal-to-metal contact, while the backing plate remains electrically isolated from the chamber walls. This allows the sealing of a vacuum chamber in the magnetron sputtering system using a seal suitable for creating an ultra-high vacuum in the vacuum chamber.
摘要翻译：提供了一种磁控溅射系统，其使用背板组件，该背板组件具有联接在背衬板和延伸环之间并与气垫密封的绝缘间隔环。绝缘间隔环可以由陶瓷材料构成，并且增量环可以由金属材料构成。使用该背板组件允许背板组件通过金属对金属接触直接耦合到室壁，而背板保持与室壁电隔离。这允许使用适于在真空室中产生超高真空的密封来密封磁控溅射系统中的真空室。

29. 发明授权

US5972803A High throughput optical curing process for semiconductor device manufacturing 失效
标题翻译：半导体器件制造的高通量光学固化工艺
公开(公告)号：US5972803A
公开(公告)日：1999-10-26
申请号：US955422
申请日：1997-10-22
申请人： Jing Shing Shu , Ming-Jang Hwang , Mehrdad M. Moslehi , Cecil J. Davis
发明人： Jing Shing Shu , Ming-Jang Hwang , Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： B29C35/02 , B29L31/34 , H01L21/3105 , H01L21/314 , H01L21/768 , H01L23/522 , H01L21/469 , H01L21/02
CPC分类号： H01L21/76828 , H01L21/31058
摘要： This is a curing method of low-k dielectric material in a semiconductor device and system for such. The method may comprise: depositing metal interconnection lines; depositing the low-k dielectric material layer over the lines; and curing the low-k dielectric material layer with a heating lamp for less than 10 minutes, wherein the heating lamp provides optical radiation energy in the infrared spectral range of about 1 micron to 3.5 microns in wavelength. The heating lamp may be a tungsten-halogen lamp.
摘要翻译：这是半导体器件中的低k电介质材料的固化方法及其制造方法。该方法可以包括：沉积金属互连线; 在线路上沉积低k电介质材料层; 以及用加热灯固化低k电介质材料层少于10分钟，其中加热灯在波长为约1微米至3.5微米的红外光谱范围内提供光辐射能量。加热灯可以是卤钨灯。

30. 发明授权

US5876573A High magnetic flux cathode apparatus and method for high productivity physical-vapor deposition 失效
标题翻译：高磁通阴极装置和高生产率物理气相沉积方法
公开(公告)号：US5876573A
公开(公告)日：1999-03-02
申请号：US677951
申请日：1996-07-10
申请人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
发明人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
IPC分类号： C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统，其使用磁控管组件中的冷却通道来冷却靶。磁控溅射系统还在磁控管组件中产生低压区域，使得背板看到的压差远低于大气压。背板的厚度减小，并且对产生的磁场提供较少的屏障。

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